APPLICATIO S TYPICAL APPLICATIO. LT1001 Precision Operational Amplifier DESCRIPTIO FEATURES

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1 FEATRES Guaranteed Low Offset Voltage AM 5µV max C µv max Guaranteed Low Drift AM.µV/ C max C.µV/ C max Guaranteed Low Bias Current AM na max C na max Guaranteed CMRR AM db min C db min Guaranteed PSRR AM db min C db min Low Power Dissipation AM 5mW max C 8mW max Low Noise.µV P-P APPLICATIO S Thermocouple amplifiers Strain gauge amplifiers Low level signal processing High accuracy data acquisition Precision Operational Amplifier DESCRIPTIO The LT significantly advances the state-of-theart of precision operational amplifiers. In the design, processing, and testing of the device, particular attention has been paid to the optimization of the entire distribution of several key parameters. Consequently, the specifications of the lowest cost, commercial temperature device, the C, have been dramatically improved when compared to equivalent grades of competing precision amplifiers. Essentially, the input offset voltage of all units is less than 5µV (see distribution plot below). This allows the AM/88 to be specified at 5µV. Input bias and offset currents, common-mode and power supply rejection of the C offer guaranteed performance which were previously attainable only with expensive, selected grades of other devices. Power dissipation is nearly halved compared to the most popular precision op amps, without adversely affecting noise or speed performance. A beneficial by-product of lower dissipation is decreased warm-up drift. Output drive capability of the is also enhanced with voltage gain guaranteed at ma of load current. For similar performance in a dual precision op amp, with guaranteed matching specifications, see the LT. Shown below is a platinum resistance thermometer application., LTC and LT are registered trademarks of Linear Technology Corporation. TYPICAL APPLICATIO.k** 5 Linearized Platinum Resistance Thermometer with ±.5 C Accuracy Over to C R plat. k = C MEG.** k* k GAIN TRIM Typical Distribution of Offset Voltage, T A = 5 C 95 NITS FROM THREE RNS k* µf k* Ω LINEARITY TRIM OTPT TO V = TO C NMBER OF NITS 5 5 LM9 * LTRONIX 5A WIREWOND ** % FILM PLATINM RTD 8MF (ROSEMONT, INC.) 9k* k OFFSET TRIM k* Trim sequence: trim offset ( C =.Ω), trim linearity (5 C = 8.Ω), trim gain ( C = 9.Ω). Repeat until all three points are fixed with ±.5 C. TA INPT OFFSET VOLTAGE (µv) TA

2 ABSOLTE MAXIMM RATINGS W W W (Note ) Supply Voltage... ±V Differential Input Voltage... ±V Input Voltage... ±V Output Short Circuit Duration... Indefinite PACKAGE/ORDER INFORMATION TOP VIEW OFFSET ADJST 8 V IN OT 5 IN V (CASE) NC H PACKAGE METAL CAN T JMAX = 5 C, θ JA = 5 C/W, θ jc = 5 C/W OBSOLETE PACKAGE W ORDER PART NMBER AMH/88 MH ACH CH Consider the N8 and S8 Packages for Alternate Source Consult LTC Marketing for parts specified with wider operating temperature ranges. Operating Temperature Range AM/M (OBSOLETE).. 55 C to 5 C AC/C... C to 5 C Storage: All Devices... 5 C to 5 C Lead Temperature (Soldering, sec.)... C V OS TRIM IN IN V TOP VIEW N8 PACKAGE 8 PIN PLASTIC DIP V OS 8 TRIM V OT 5 NC S8 PACKAGE 8 PIN PLASTIC SO T JMAX = 5 C, θ JA = C/W (N) T JMAX = 5 C, θ JA = 5 C/W (S) J8 PACKAGE 8 PIN HERMETIC DIP T JMAX = 5 C, θ JA = C/W (J) ORDER PART NMBER ACN8 CN8 CS8 S8 PART MARKING ORDER PART NMBER AMJ8/88 MJ8 ACJ8 CJ8 OBSOLETE PACKAGE Consider the N8 and S8 Packages for Alternate Source ELECTRICAL CHARACTERISTICS The denotes the specifications which apply over the full operating temperature range, otherwise specifications are at T A = 5 C., unless otherwise noted AM/88 AC M/C SYMBOL PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX NITS V OS Input Offset Voltage Note AM/88 5 AC 5 8 µv V OS Long Term Input Offset Voltage Time Stability Notes and....5 µv/month I OS Input Offset Current....8 na I b Input Bias Current ±.5 ±. ±. ±. na e n Input Noise Voltage.Hz to Hz (Note ).... µv p-p e n Input Noise Voltage Density f O = Hz (Note ) nv Hz f O = Hz (Note ) nv Hz A VOL Large Signal Voltage Gain R L kω, V O = ±V V/mV R L kω V O = ±V V/mV CMRR Common Mode Rejection Ratio V CM = ±V db PSRR Power Supply Rejection Ratio V S = ±V to ±8V db R in Input Resistance Differential Mode 5 8 MΩ

3 ELECTRICAL CHARACTERISTICS The denotes the specifications which apply over the full operating temperature range, otherwise specifications are at T A = 5 C., T A = 5 C, unless otherwise noted AM/88 AC M/C SYMBOL PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX NITS Input Voltage Range ± ± ± ± V V OT Maximum Output Voltage Swing R L kω ± ± ± ± V R L kω ± ±.5 ± ±.5 V S R Slew Rate R L kω (Note 5) V/µs GBW Gain-Bandwidth Product (Note 5) MHz P d Power Dissipation No load mw No load, V S = ±V 8 mw, 55 C T A 5 C, unless otherwise noted AM/88 M SYMBOL PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX NITS V OS Input Offset Voltage 5 µv V OS Average Offset Voltage Drift.... µv/ C Temp I OS Input Offset Current.8... na I B Input Bias Current ±. ±. ±.5 ±8. na A VOL Large Signal Voltage Gain R L kω, V O = ±V V/mV CMRR Common Mode Rejection Ratio V CM = ±V db PSRR Power Supply Rejection Ratio V S = ± to ±8V db Input Voltage Range ± ± ± ± V V OT Output Voltage Swing R L kω ±.5 ±.5 ±. ±.5 V P d Power Dissipation No load 55 9 mw, C T A C, unless otherwise noted AC C SYMBOL PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX NITS V OS Input Offset Voltage µv V OS Average Offset Voltage Drift.... µv/ C Temp I OS Input Offset Current na I B Input Bias Current ±. ±.5 ±. ±5.5 na A VOL Large Signal Voltage Gain R L kω, V O = ±V V/mV CMRR Common Mode Rejection Ratio V CM = ±V db PSRR Power Supply Rejection Ratio V S = ±V to ±8V db Input Voltage Range ± ± ± ± V V OT Output Voltage Swing R L kω ±.5 ±.8 ±.5 ±.8 V P d Power Dissipation No load mw Note : Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Note : Offset voltage for the AM/88 and AC are measured after power is applied and the device is fully warmed up. All other grades are measured with high speed test equipment, approximately second after power is applied. The AM/88 receives 8 hr. burn-in at 5 C. or equivalent. Note : This parameter is tested on a sample basis only. Note : Long Term Input Offset Voltage Stability refers to the averaged trend line of V OS versus Time over extended periods after the first days of operation. Excluding the initial hour of operation, changes in V OS during the first days are typically.5µv. Note 5: Parameter is guaranteed by design. Note : Hz noise voltage density is sample tested on every lot. Devices % tested at Hz are available on request.

4 TYPICAL PERFORMANCE CHARACTERISTICS W Typical Distribution of Offset Voltage Drift with Temperature 5 Offset Voltage Drift withtemperature of Representative nits Warm-p Drift NMBER OF NITS 8 5 NITS TESTED OFFSET VOLTAGE (µv) A A CHANGE IN OFFSET VOLTAGE (µv) T A = 5 C METAL CAN (H) PACKAGE DAL-IN-LINE PACKAGE PLASTIC (N) OR CERDIP (J) OFFSET VOLTAGE DRIFT (µv/ C) TEMPERATRE ( C) 5 TIME AFTER POWER ON (MINTES) G G G NOISE VOLTAGE nv/div.hz to Hz Noise VOLTAGE NOISE nv/ Hz Noise Spectrum T A = 5 C V S = ± TO ±8V /f CORNER Hz VOLTAGE /f CORNER Hz.. CRRENT NOISE pa/ Hz OFFSET VOLTAGE CHANGE (µv) 5 5 Long Term Stability of Four Representative nits CRRENT 8 TIME (SECONDS). FREQENCY (Hz) 5 TIME (MONTHS) G G5 G INPT BIAS AND OFFSET CRRENTS (na) Input Bias and Offset Current vs Temperature TEMPERATRE ( C) BIAS CRRENT OFFSET CRRENT INPT BIAS CRRENT (na) Input Bias Current Over the Common Mode Range V CM DEVICE WITH POSITIVE INPT CRRENT T A = 5 C DEVICE WITH NEGATIVE INPT CRRENT. COMMON MODE INPT RESISTANCE = 8V = 8GΩ.nA COMMON MODE INPT VOLTAGE I b INVERTING OR NON-INVERTING INPT BIAS CRRENT (ma) Input Bias Current vs Differential Input Voltage. T A = 5 C I B na to V DIFF =.V... ±DIFFERENTIAL INPT (V) G G8 G9

5 TYPICAL PERFORMANCE CHARACTERISTICS W Open Loop Voltage Gain vs Temperature Open Loop Voltage Gain Frequency Response Gain, Phase Shift vs Frequency 8 OPEN LOOP VOLTAGE GAIN (V/V) k k 8k k k k 5, V O = ±V V S = ±V, V O = ±V TEMPERATRE ( C) OPEN LOOP VOLTAGE GAIN (db) 8. T A = 5 C V S = ±V k k k M FREQENCY (Hz) M VOLTAGE GAIN (db) PHASE 5 C 8 5 C PHASE MARGIN GAIN 5 C = GAIN 5 C & 55 C PHASE MARGIN 55 C = 8 5 C = FREQENCY (MHz) 8 PHASE SHIFT (DEG) G G G COMMON MODE LIMIT (V) REFERRED TO POWER SPPLY V Common Mode Limit vs Temperature V =. to V V = to 8V V = to 8V V =. to V V TEMPERATRE C COMMON MODE REJECTION (db) 8 Common Mode Rejection Ratio vs Frequency T A = 5 C k k FREQENCY (Hz) k M POWER SPPLY REJECTION (db) 8 Power Supply Rejection Ratio vs Frequency POSITIVE SPPLY ±V p-p T A = 5 C NEGATIVE SPPLY. k k k FREQENCY (Hz) G G G5 Supply Current vs Supply Voltage Output Swing vs Load Resistance 5 Output Short-Circuit Current vs Time SPPLY CRRENT (ma) C 55 C 5 C ± ± ±9 ± ±5 ±8 ± SPPLY VOLTAGE (V) OTPT SWING (V) 8 NEGATIVE SWING POSITIVE SWING T A = 5 C k k LOAD RESISTANCE (Ω) SHORT CIRCIT CRRENT (ma) SINKING SORCING 5 55 C 5 C 5 C 5 C 5 C 55 C TIME FROM OPTPT SHORT (MINTES) G G G8 5

6 TYPICAL PERFORMANCE CHARACTERISTICS W Small Signal Transient Response PERCENT OVERSHOOT 8 Voltage Follower Overshoot vs Capacitive Load T A = 5 C V IN = mv R L > 5k Small Signal Transient Response A V =, C L = 5pF,, CAPACITIVE LOAD (pf) A V =, C L = pf G9 G G Large Signal Transient Response OTPT VOLTAGE, PEAK-TO-PEAK (V) 8 8 Maximum ndistorted Output vs. Frequency T A = 5 C OTPT IMPEDANCE (Ω).. Closed Loop Output Impedance A V = A V = I O = ±ma T A = 5 C FREQENCY (khz). k k k FREQENCY (Hz) G G G APPLICATIONS INFORMATION Application Notes and Test Circuits The series units may be inserted directly into OP-, OP-5, 5, 8A or A sockets with or without removal of external frequency compensation or nulling components. The can also be used in, LF5 or OP-5 applications provided that the nulling circuitry is removed. The is specified over a wide range of power supply voltages from ±V to ±8V. Operation with lower supplies is possible down to ±.V (two Ni-Cad batteries). However, with ±.V supplies, the device is stable only in closed loop gains of or higher (or inverting gain of one or higher). W nless proper care is exercised, thermocouple effects caused by temperature gradients across dissimilar metals at the contacts to the input terminals, can exceed the inherent drift of the amplifier. Air currents over device leads should be minimized, package leads should be short, and the two input leads should be as close together as possible and maintained at the same temperature. Test Circuit for Offset Voltage and its Drift with Temperature Ω 5k * * *5k 5V 5V V O = V OS V O * RESISTORS MST HAVE LOW THERMOELECTRIC POTENTIAL. ** THIS CIRCIT IS ALSO SED AS THE BRN-IN CONFIGRATION FOR THE, WITH SPPLY VOLTAGES INCREASED TO ±V. F

7 APPLICATIONS INFORMATION Offset Voltage Adjustment The input offset voltage of the, and its drift with temperature, are permanently trimmed at wafer test to a low level. However, if further adjustment of Vos is necessary, nulling with a k or k potentiometer will not degrade drift with temperature. Trimming to a value other than zero creates a drift of (Vos/)µV/ C, e.g., if Vos is Improved Sensitivity Adjustment INPT W.5k k.5k 5V 8 5V OTPT F adjusted to µv, the change in drift will be µv/ C. The adjustment range with a k or k pot is approximately ±.5mV. If less adjustment range is needed, the sensitivity and resolution of the nulling can be improved by using a smaller pot in conjunction with fixed resistors. The example below has an approximate null range of ± µv. Ω.µF kω.hz to Hz Noise Test Circuit kω. µf DEVICE NDER TEST.k VOLTAGE GAIN = 5, (PEAK-TO-PEAK NOISE MEASRED IN SEC INTERVAL) k. µf.k.µf µf SCOPE R IN = MΩ k F The device under test should be warmed up for three minutes and shielded from air currents. DC Stabilized v/µsec Op Amp.µF TANTALM 5V.9k Ω.µF N58 N9.µF Ω* N5 pf µf TANTALM Ω N8 INPT R IN k k 5pF k 5V k.µf.8k 9Ω N9 N9 N.5Ω k Ω OTPT Ω N5 N9.5Ω.µF N8 N 5-pF TSONIX # k N9 Ω Ω* pf.k µf TANTALM.µF 5V F k R f FLL POWER BANDWIDTH 8MHz *ADJST FOR BEST SQARE WAVE AT OTPT

8 TYPICAL APPLICATIONS Microvolt Comparator with TTL Output 5V Photodiode Amplifier pf NON INVERTING INPT 8.M % 9.Ω % 5k 5%.99k % INVERTING k INPT 5% IN9 N9 OTPT λ 5k % OTPT V/µA 5V POSITIVE FEEDBACK TO ONE OF THE NLLING TERMINALS CREATES 5µ TO µv OF HYSTERESIS. INPT OFFSET VOLTAGE IS TYPICALLY CHANGED BY LESS THAN 5µV DE TO THE FEEDBACK. TA pf 5k % TA Precision Current Source Precision Current Sink V IN 5k to (V V) 5k 5V pf k N85 N9 R C RC V IN to (V V) V = V to 5V 5V K N85 I OT = V IN R N9 V = to 5V I OT = V IN R TA5 R TA 5V Strain Gauge Signal Conditioner with Bridge Excitation 8.k k* LM9.99k* k IN8 5V Ω N9 REFERENCE OT TO MONITORING A/D CONVERTER 5Ω BRIDGE * k k ZERO µf k* V TO V OT 8 IN8 k N9 5V Ω 5W *RNC FILM RESISTORS.k* GAIN TRIM TA

9 TYPICAL APPLICATIONS INPT V TO V Large Signal Voltage Follower With.% Worst Case Accuracy R S k TO k V TO 8V The voltage follower is an ideal example illustrating the overall excellence of the. The contributing error terms are due to offset voltage, input bias current, voltage gain, common mode and power-supply V TO 8V OTPT V TO V TA8 rejections. Worst-case summation of guaranteed specifications is tabulated below. OTPT ACCRACY AM C AM C /88 /88 5 C 5 C 55 to 5 C to C Error Max. Max. Max. Max. Offset Voltage 5µV µv µv µv Bias Current µv µv µv 55µV Common Mode Rejection µv µv µv 5µV Power Supply Rejection 8µV µv µv µv Voltage Gain µv 5µV µv µv Worst-case Sum 95µV 85µV 99µV 9µV Percent of Full Scale (=V).5%.9%.%.5% Thermally Controlled NiCad Charger * IN BATTERY AMBIENT k k 5V CIRCIT SES TEMPERATRE DIFFERENCE BETWEEN BATTERY PACK MONTED THERMOCOPLE AND AMBIENT THERMO- COPLE TO SET BATTERY CHARGE CRRENT. PEAK CHARGING CRRENT IS AMP. Ω 5V 5V k µf V,.A HR NICAD STACK IN8 N8.Ω 5W.µF * * SINGLE POINT GROND THERMOCOPLES ARE µv/ C CHROMEL-ALMEL (TYPE K) * TA9 Precision Absolute Value Circuit k.% k.% k.% INPT V TO V k.% k.% IN8 IN8 OTPT V TO V TA 9

10 TYPICAL APPLICATIONS 5V Ω 8.k k* (SELECT) Precision Power Supply with Two Outputs () V to V in µv STEPS () V to V in mv STEPS k* k IN9 VN- 5V Ω 5W N9 TRIAD TY-9 OTPT V-V 5mA LM99 5V KVD KELVIN-VARLEY DIVIDER ESI#DP VN- DIODES = SEMTECH # FF-5 µf 9k* OTPT V-V, 5mA *JLIE RSCH. LABS #R- 5k 8pF LTA k D CLK Q Q.µF µf.µf N5 k IN9 k* (SELECT) TRIMV Ω k 5V k C 5V.8k CLAMP SET 5k 5Ω 5V IN9 N9 TA Dead Zone Generator BIPOLAR SYMMETRY IS EXCELLENT BECASE ONE DEVICE, Q, SETS BOTH LIMITS INPT k** k k** k* LMA 8 Q Q.k Q V SET DEAD ZONE CONTROL INPT V TO 5V k* k pf N9 Q k pf LMA IN9 5pF 5V.k.k.k Q5 k 5pF IN9 k** k k N9 Q k** V SET V OT V OT V IN 5V * % FILM ** RATIO MATCH.5% Q,,, 5 CA 9 TRANSISTOR ARRAY V SET TA

11 TYPICAL APPLICATIONS Instrumentation Amplifier with ±V Common Mode Range and CMRR > 5dB 5V 8Ω 8Ω k.µf k* OTPT S S INPT µf**.µf** 99Ω* S S Ω GAIN TRIM (ACQIRE) (READ) OT C9 OT A IN IN C C8 k* C k* EN R CLK k k LMA 5.k*.µF R k ) ALL DIODES IN8 ) SS OPTO MOS SWITCH OFM-A, THETA-J CORP. ) *FILM RESISTOR ) **POLYPROPYLENE CAPACITORS 5) ADJST R for 9 Hz AT TEST POINT A LM9 A FLYING CAPACITOR CHARGED BY CLOCKED PHOTO DRIVEN FET SWITCHES CONVERTS A DIFFERENTIAL SIGNAL AT A HIGH COMMON MODE VOLTAGE TO A SINGLE ENDED SIGNAL AT THE OTPT. TA

12 SCHE ATIC DIAGRA W W 5 5 V V Q Q5 Q Q Q Q8 Q9 Q Q5 Q Q Q Q8 Q Q Q Q SS Q k k Q5 Q Ω Ω Ω 8Ω Ω k 8k.5k 5k Q Q Q Q Q 55pF pf k pf QB Q Q9 Q9 Q T Q Q8 Q QB QA 8 k k k k OT QA

13 PACKAGE DESCRIPTION H Package 8-Lead TO-5 Metal Can (. Inch PCD) (Reference LTC DWG # 5-8-) SEATING PLANE..5* (.5.).5. ( ) DIA.5.5 (. 8.59). (.) MAX.5 (.) MAX.5.85 (.9.99)..** (..5) GAGE PLANE.5.5 (. 9.5) REFERENCE PLANE 5 TYP.8. (..8)..5 (.8.) PIN. (5.8) TYP.. (.9.) INSLATING STANDOFF * LEAD DIAMETER IS NCONTROLLED BETWEEN THE REFERENCE PLANE AND.5" BELOW THE REFERENCE PLANE.. ** FOR SOLDER DIP LEAD FINISH, LEAD DIAMETER IS (..) H8(TO-5). PCD 9 OBSOLETE PACKAGE

14 PACKAGE DESCRIPTION J8 Package 8-Lead CERDIP (Narrow. Inch, Hermetic) (Reference LTC DWG # 5-8-).5.8 (..) FLL LEAD OPTION. BSC (. BSC) CORNER LEADS OPTION ( PLCS)..5 (.58.) HALF LEAD OPTION.5 (.) MIN.5 (.5) RAD TYP.5 (.8) MAX ( ). (5.8) MAX.5. (.8.5).8.8 (..5) 5 NOTE: LEAD DIMENSIONS APPLY TO SOLDER DIP/PLATE OR TIN PLATE LEADS.5.5 (..5).. (..). (.5) BSC.5.5 MIN J8 98 OBSOLETE PACKAGE

15 PACKAGE DESCRIPTION N8 Package 8-Lead PDIP (Narrow. Inch) (Reference LTC DWG # 5-8-5).* (.) MAX ±.5* (. ±.8)..5 (. 8.55).5.5 (..5). ±.5 (. ±.).9.5 (.9.8) ( ).5 (.5) TYP. (.5) BSC *THESE DIMENSIONS DO NOT INCLDE MOLD FLASH OR PROTRSIONS. MOLD FLASH OR PROTRSIONS SHALL NOT EXCEED. INCH (.5mm).5 (.5) MIN.8 ±. (.5 ±.). (.58) MIN N8 98 Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 5

16 PACKAGE DESCRIPTION S8 Package 8-Lead Plastic Small Outline (Narrow.5 Inch) (Reference LTC DWG # 5-8-).89.9* (.8 5.) (5.9.9).5.5** (.8.988) SO (..5).. (.5.58) 5 8 TYP.5.9 (..5).. (..5)..5 (..) * DIMENSION DOES NOT INCLDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED." (.5mm) PER SIDE ** DIMENSION DOES NOT INCLDE INTERLEAD FLASH. INTERLEAD FLASH SHALL NOT EXCEED." (.5mm) PER SIDE..9 (.55.8) TYP.5 (.) BSC Linear Technology Corporation McCarthy Blvd., Milpitas, CA 955- (8) -9 FAX: (8) -5 LT/CPI.5K REV B PRINTED IN SA LINEAR TECHNOLOGY CORPORATION 98