Reliability Monitor Report
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1 Reliability Monitor Report High Temperature Operating Life Data Retention Bake Temperature Cycle Temperature & Humidity Bias/ HAST Steam Pressure Pot Second QUARTER 2011 ATMEL PROPRIETARY
2 Table of Contents 1. Executive Summary 1 2. HTOL (sorted by product BU) 2 3. HTOL (sorted by technology) Data Retention Bake (sorted by product BU) 5 5. Data Retention Bake (sorted by technology) 6 6. Temperature Cycle 7 7. Temperature Humidity Bias & HAST 8 8. Steam Pressure Pot 9 9. Technology List Failure Rate Calculations Definitions 12 RELIABILITY MONITOR -- ATMEL PROPRIETARY
3 Reliability Monitor Report Date: Apr 13, 2011 Executive Summary The intent of the Reliability Monitor Program is to measure the reliability of previously qualified devices on a quarterly basis. This is achieved by selecting representative devices within a process, package or business unit and performing a series of reliability tests to ensure that the reliability has maintained over time. Listed below are the overall results for the last quarter. 1. High Temperature Operating Life ( C; 0 failures) Failure Rate: 12 FITS (4,108K device-hours) Note: The Exponential Model is used to derive FIT rates (60% Confidence; E A = 0.6 ev). Also, Thermal and Voltage Acceleration are used to compute the overall acceleration factor. Weighted acceleration factors (WAF) for a group of products are calculated by taking the weighted average of each device s acceleration factor multiplied by its corresponding device hours. All failures were inconclusive. 2. Data Retention Bake (150 C; 0 failures) Failure Rate: 23 FITS (347K device-hours) Note: The Exponential Model is used to derive FIT rates (60% Confidence; E A = 0.6 ev). Since there is no bias applied during testing and the stress temperature is fixed for all devices at 150 C, the acceleration factor is 117 for all groupings. 3. Temperature Cycle (-65 C to 150 C, 500 cycles) * Failure Rate: 0.00% (0 failures out of 231 units) 4. Temperature Humidity Bias (85 C/85%RH) and HAST (130 C/85%RH) * Failure Rate: 0.00% (0 failures out of 308K device-hours) Note: A 20:1 Acceleration Factor is used to combine HAST results with THB). 5. Steam Pressure Pot (121 C/100%RH) * Failure Rate: 0.00% (0 failures out of 231 units) RELIABILITY MONITOR -- ATMEL PROPRIETARY 1 * indicates that preconditioning is performed prior to the stress test.
4 High Temperature Operating Life (sorted by FAMILY) BU QTR 48 Hours 168 Hours 500 Hours 1K Hours Device-Hours* WAF EFR PPM FITS REJ SS REJ SS REJ SS REJ SS APG , LAST 4Q , ASIC , LAST 4Q , MEMORY , LAST 4Q 0 1, , , ,000 1,009, MCU , ,218, LAST 4Q 0 71, , , ,039 4,812, RFA , LAST 4Q 0 2, , , ,077 2,691, ATMEL , , , ,108, LAST 4Q 0 76, , , ,319 9,738, RELIABILITY MONITOR -- ATMEL PROPRIETARY 2
5 High Temperature Operating Life (sorted by TECHNOLOGY) TECH QTR 48 Hours 168 Hours 500 Hours 1K Hours Device-Hours* WAF EFR PPM FITS REJ SS REJ SS REJ SS REJ SS UNI3 1 LAST 4Q , UHF 1 LAST 4Q , SCMOS2 1 LAST 4Q , ,017 SCMOS , LAST 4Q , SAC2NV , LAST 4Q , I 2 L 1 LAST 4Q , BCDMOS , LAST 4Q , BICMOS2 1 LAST 4Q , UMSPDMEE 1 LAST 4Q , K , LAST 4Q 0 1, , , ,154 1,422, K 1 LAST 4Q , K 1 LAST 4Q 0 2, , K , LAST 4Q , K 1 LAST 4Q , K , LAST 4Q , K , LAST 4Q , K 1 LAST 4Q , RELIABILITY MONITOR -- ATMEL PROPRIETARY 3
6 High Temperature Operating Life (sorted by TECHNOLOGY) TECH QTR 48 Hours 168 Hours 500 Hours 1K Hours Device-Hours* WAF EFR PPM FITS REJ SS REJ SS REJ SS REJ SS 35K , ,518, LAST 4Q 0 69, , , ,457 5,139, ATMEL , , , ,108, LAST 4Q 0 76, , , ,319 9,738, * The Device-Hours computation includes additional read-outs not detailed in the report. RELIABILITY MONITOR -- ATMEL PROPRIETARY 4
7 Data Retention Bake (sorted by FAMILY) BU QTR 168 Hours 500 Hours 1K Hours Device-Hours AF FITS REJ SS REJ SS REJ SS APG LAST 4Q ASIC LAST 4Q MEMORY , LAST 4Q , MCU , LAST 4Q 0 3, , ,570 2,775, RFA LAST 4Q ATMEL , LAST 4Q 1 3, , ,961 3,166, RELIABILITY MONITOR -- ATMEL PROPRIETARY 5
8 Data Retention Bake (sorted by TECHNOLOGY) TECH QTR 168 Hours 500 Hours 1K Hours Device-Hours AF FITS REJ SS REJ SS REJ SS 63 K , LAST 4Q , K , LAST 4Q 0 1, , , K , LAST 4Q 0 2, , ,723 1,851, ATMEL , LAST 4Q 0 3, , ,961 3,166, RELIABILITY MONITOR -- ATMEL PROPRIETARY 6
9 Temperature Cycle PACKAGE QTR 100 Cycles 200 Cycles 500 Cycles 1K Cycles % Defective REJ SS REJ SS REJ SS REJ SS CASON % LAST 4Q % BGA % LAST 4Q % LGA 1 LAST 4Q % MLF / QFN % LAST 4Q % SOIC 1 LAST 4Q % TQFP 1 LAST 4Q 0 1, , , % TSSOP 1 LAST 4Q % ATMEL % LAST 4Q 0 2, , , , % RELIABILITY MONITOR -- ATMEL PROPRIETARY 7
10 Temperature Humidity Bias / HAST Temperature Humidity Bias HAST PACKAGE QTR 168 Hours 500 Hours 1K Hours 100 Hours Device-Hours* % Defective REJ SS REJ SS REJ SS REJ SS BGA , % LAST 4Q , % MLF / QFN , % LAST 4Q , % SOIC 1 LAST 4Q , % TQFP 1 LAST 4Q , % TSSOP 1 LAST 4Q , % ATMEL , % LAST 4Q 0 2, , , ,800, % RELIABILITY MONITOR -- ATMEL PROPRIETARY 8
11 Steam Pressure Pot PACKAGE QTR 96 Hours 168 Hours 240 Hours % Defective REJ SS REJ SS REJ SS CASON % LAST 4Q % BGA % LAST 4Q % LGA 1 LAST 4Q % MLF / QFN % LAST 4Q % SOIC 1 LAST 4Q % TQFP 1 LAST 4Q 0 1, % TSSOP 1 LAST 4Q % ATMEL % LAST 4Q 0 2, % RELIABILITY MONITOR -- ATMEL PROPRIETARY 9
12 Technology List FAB TECH TYPE CMOS / BIP LITHOGRAPHY [µm] TYPICAL PRODUCTS / APPLICATIONS EEPROM seeprom EEPROM 1.1 seeprom Embedded Memory Configurator 1.0 Configurator Embedded Memory 0.7 EEPROM, MC (Intel core), MC (AVR core) EPLD 0.5 PLD EPLD 0.5 PLD CMOS 0.7 ASIC Embedded Memory Configurator 0.7 seeprom, PEROM, EEPROM, Configurator Embedded Memory 0.7 Smartcard, AVR, µc 5 25 BiCMOS 1.0 ASIC 5 26 Logic 0.7 ASIC FLASH EPROM 0.5 EPROM NTO Embedded Memory Configurator 0.35 EEPROM, FLASH, MICRO, EPLD 5 37 EEPROM 0.35 FLASH, PEROM, DATA FLASH, seeprom 5 39 EEPROM 0.25 DATA FLASH EEPROM 0.25 FLASH, DATA FLASH 5 42 BiCMOS 0.6 ASIC CSO 43 ASIC, TX RF HNO 46 RFA 5 55 Logic 0.5 ASIC CMOS 0.5 ASIC 5 56 Logic 0.35 ASIC Embedded Memory 0.35 ASIC CMOS 0.25 ASIC CMOS 0.21 ASIC / RFA CMOS 0.18 ASIC / RFA SJO 61 CMOS 0.18 FLASH SJO 63 HNO 75 RFA HNO 6UH6+BICMOS RFA HNO BCDMOS 6BD1 0.8 ASIC / RFA HNO BICMOS ASIC / RFA HNO BICMOS2 RFA HNO I²L 6IL4 2 ASIC HNO SCMOS3 RFA HNO SIGE2 6SG1 0.8 RFA HNO UHF 6UH6 0.5 ASIC / RFA HNO UNI3 RFA NTO Z86 CMOS Digital 0.8 SRAM,MICRO, VAN DLC NTO Z91 CMOS Digital 0.6 SRAM, ASIC, MICRO NTO Z92 CMOS Digital 0.5 ASIC, MICRO,VAN DLC NTO Z94 CMOS + EPROM 0.5 OTP MICRO HNO Z95 RFA HNO Z96 RFA RELIABILITY MONITOR -- ATMEL PROPRIETARY 10
13 Failure Rate Calculations Failure Rate: χ λ = 2 AF DH where, λ = Failure Rate (FITS) χ 2 = Failure Estimate α = Confidence Level (60% or 90%) n = Number of Failures AF = Overall Acceleration Factor (TAF x VAF) DH = Device Hours α ( 1, + ) n 2 Thermal Acceleration: TAF = e e a 1 1 k Tf + ( Pf θ JAf ) Ts+ ( Ps θ JAs) where, TAF = Thermal Acceleration Factor E A = Activation Energy (ev) k = Boltzman s Constant (8.617 x 10-5 ev/ K) T = Temperature ( K) f = Field Conditions s = Stress Conditions P = Power Dissipation (W) = Thermal Resistance Coefficient - Junction to Ambient ( C/W) θ JA Voltage Acceleration: [ S n] VAF e Z = V V where, VAF = Voltage Acceleration Factor V s = Stress Voltage (V) V n = Nominal Voltage (V) Z = Voltage Acceleration Constant (typically, 0.5 < Z < 1.0) RELIABILITY MONITOR -- ATMEL PROPRIETARY 11
14 Definitions Data Retention Bake (DRB): This test is used to measure a device s ability to retain a charge for extended periods of time without applying voltage bias. Stressing at high temperatures (150 C for plastic packages) accelerates any discharge causing the memory state to change. Failures In Time (FITS): This is the unit measure for expressing failure rates and is identical to the expression PPM/K hours. For example, three failures out of a million components tested for one thousand hours equates to 3 FITS. High Temperature Operating Life (HTOL): The purpose of this test is to accelerate thermally activated failure mechanisms through the use of high temperatures (typically between 125 C and 150 C), increased voltage, and dynamic bias conditions. Readouts at various time points are taken to determine the Early Failure Rate (EFR) and Intrinsic Failure Rate (IFR). EFR is expressed in defective parts per million (DPPM) and IFR is expressed in Failures in Time (FITS at 55 C). Highly Accelerated Stress Test (HAST): The purpose of this test is to evaluate a plastic packaged component s ability to withstand harsh environmental conditions with extreme temperature and humidity levels. The parts are stressed to high temperature (130 C) and relative humidity (85%RH) conditions in a biased state to achieve maximum acceleration. Steam Pressure Pot (SPP): The test is used to evaluate a plastic packaged component s ability to withstand severe conditions of pressure (15 psig), temperature (121 C), and humidity (100%RH). Temperature Cycle (TC): This test is used to measure a product s sensitivity to thermal stresses due to differences in expansion and contraction characteristics of the die and mold compound by repeated alternating temperature dwells between high and low temperature extremes. Temperature Humidity Bias (THB): The purpose of this test (85 C/85%RH) is identical to HAST. The only difference is that HAST accelerates THB by a factor of 20:1 due to the increase in temperature during test. RELIABILITY MONITOR -- ATMEL PROPRIETARY 12
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