The Essence of Three-Phase PFC Rectifier Systems

Transcription

1 2011 EEE Proeedigs of the 33rd EEE tertiol Teleommuitios Eergy Coferee (NTEEC 2011), Amsterdm, Netherlds, Otoer 9-13, The Essee of Three-Phse PFC Retifier Systems J. W. Kolr T. Friedli This mteril is osted here with ermissio of the EEE. Suh ermissio of the EEE does ot i y wy imly EEE edorsemet of y of ETH Zurih s roduts or servies. terl or ersol use of this mteril is ermitted. However, ermissio to rerit/reulish this mteril for dvertisig or romotiol uroses or for retig ew olletive works for resle or redistriutio must e otied from the EEE y writig to [email protected]. By hoosig to view this doumet, you gree to ll rovisios of the oyright lws rotetig it.

2 The Essee of Three-Phse PFC Retifier Systems Joh W. Kolr d Thoms Friedli Power Eletroi Systems ortory (PES), ETH Zurih 8092 Zurih, Switzerld, [email protected] Astrt- this er, three-hse PFC retifier toologies with siusoidl iut urrets d otrolled outut voltge re derived from kow sigle-hse PFC retifier systems d/or ssive three-hse diode retifiers. The systems re lssified ito hyrid d fully tive PWM oost-tye or uk-tye retifiers, d their futiolity d si otrol oets re riefly desried. This filittes the uderstdig of the oertig riile of three-hse PFC retifiers strtig from sigle-hse systems, d orgizes d omletes the kowledge se with ew hyrid three-hse uk-tye PFC retifier toology deomited s SWSS Retifier. dditio, lytil formuls for lultig the urret stresses o the ower semiodutors of seleted toologies re rovided, d retifier systems offerig high otetil for idustril litios re omrtively evluted oerig the semiodutor stresses, the lodig d volume of the mi ssive omoets, d the DM d CM EM oise level. Filly, ore tois of future reserh o three-hse PFC retifier systems re disussed, suh s the lysis of ovel hyrid uktye PFC retifier toologies, the diret iut urret otrol of uktye systems, the multi-ojetive otimiztio of PFC retifier systems oerig effiiey d ower desity, d the ivestigtio of the system erforme sesitivity to semiodutor d ssive omoets tehology. dex Terms--d overter, PWM retifier, PFC retifier, PFC, oost, uk, three-hse, sigle-hse, VENNA Retifier, SWSS Retifier, overview, review.. NTRODUCTON The ower eletrois suly of high ower eletril systems from the three-hse mis is usully rried out i two stges, i.e. the mis voltge is first overted ito d voltge d the dted to the lod voltge level with d-d overter with or without glvi isoltio (f. Fig. 1). Ofte oly oe diretio of ower flow hs to e rovided; furthermore, oulig to the mis is tyilly imlemeted over oly three odutors, i.e. without eutrl odutor. the simlest se, the retifitio e doe y uidiretiol three-hse diode retifiers with itive smoothig of the outut voltge d idutors o the or d side (f. Fig. 2). The low omlexity d high roustess (o otrol, sesors, uxiliry sulies or EM filterig) of this oet must, however, e weighed gist the disdvtges of reltively high effets o the mis d uregulted outut voltge diretly deedet o the mis voltge level. The mis ehvior of ower overter is hrterized i geerl y the ower ftor A, d/or the fudmetl urret-to-voltge dislemet gle <>, d the totl hrmoi distortio of the iut urret, THDi, whih re relted y the equtio 1 A = os (<». Jl + THDr The odutio stte of the ssive retifiers show i Figs. 2() d () is essetilly determied y the mis lie-to-lie voltges, wherey oly two diodes rry urret t the sme time, exet the ommuttio itervls. This mes tht eh diode of the ositive d egtive ridge hlves rries urret oly for oe third of the mis eriod, i.e. for 120. Hee, the hse urrets for () idustrilly lile vlues of the smoothig idute show 60 wide itervls with zero urret tht result i reltively high lowfrequey hrmoi otet or THDi R:j 30%. order to void voltge distortios resultig from voltge dros ross the ier (idutive) mis imede or the exittio of resoes i the distriutio grid THDi < 5% t rted ower is ofte required. For irrft o-ord ower sulies, reltively high ier mis imedes exist d thus eve striter limits, i.e. THDi < 3% (f. DO60F, M-46E), hve to e fulfilled. This mis urret qulity e hieved oly y mes of tive Power Ftor Corretio (PFC) retifier systems. t should e oted tht for three-hse systems, the geerlly used desigtio PFC Retifier is rtly misledig, sie ssive retifiers, for idustrilly used vlues of the smoothig idute [Xi(l)/uN = ordig to Figs. 2(e) d ()], lredy exhiit high ower ftor of A = euse of the low hse-shift of the ower-formig mis urret fudmetl omoet d the ssoited hse voltge (f. () for os (<» = 1 d THDi R:j 30%, [], [2]). PFC retifiers hee hieve with regrd to the mis urret (t rted oertio) ove ll redutio of the urret hrmois ut oly slight imrovemet i the ower ftor (A > 0.99 t the rted oertig oit is tyilly trgeted). A further imortt set of the use of tive (PFC) retifier systems is the ossiility to otrol the outut d voltge to ostt vlue, ideedet of the tul mis voltge (Euroe: UN,,rms = 400 V; USA, J: UN,,rms = 200 V, UN,,rms deomites the rms vlue of the mis lie-to-lie voltge). A overter stge o the outut side (f. Fig. 1) thus e dimesioed to rrow voltge rge. The mis voltge rge must e osidered oly for the dimesioig of the retifier stge (the delivery of give rted ower, e.g. t hlf of the iut voltge, leds to doulig of the iut urret tht must e mstered y the ower semiodutors, P P AC DC ") P P AC DC l P A Cl EAt:JAS AC DC B Fig. 1. Blok digrms of tyil overter ofigurtios for sulyig eletril lods from the three-hse mis. ) Three-hse -d overter with o-isolted d-d overter (e.g. for the oulig of d distriutio systems to the three-hse mis or s mis iterfe for high-ower isolted lods, e.g. lightig systems). ) Three-hse -d overter with isolted dd overter (e.g. for teleom ower sulies, welders, or idutio hetig systems). ) Three-hse -d overter d three-hse d- overter (iverter) without isoltio (e.g. for vrile seed drives) /111$ EEE

3 2 P i C : ju"" f ju C : ju, ) ) U,(2ml!), 20mll <.> 10 01) l:l $ E :;l U <.> 01) l:l $ E :;l U ) C -:::, e) 0.7 : - / '.l. = 2 mh t (ms) U r-:--t-- : f =20 m xf()/on d) t (ms) U :::,. 0.8 f) 0.7 / 'A. i, = 5 mh, ,, : f = 2 0m l H XJ(/ON Fig. 2. Pssive three-hse diode retifitio. ) Smoothig idutors o the side. ) Smoothig idutor o the d side. ) d d) Corresodig iut urret wveforms. e) d f) Resultt glol verge vlue U of the outut voltge u d ower ftor.>.. t the iut. (Simultio rmeters: rms lie-to-lie voltge UN.ll,rms = 400 V, mis frequey N = 50 Hz, smoothig ite o the d side C = mf, d smoothig idute = [lmh mh].) ssive ower omoets d the EM filter) or reltively high d well-defied voltge level is ville for the geertio of the outut (lod) voltge [f. Fig. l()]. The requiremets led o tive PFC retifier systems my thus e summrized s follows: siusoidl iut urret ordig to regultios regrdig the mis ehvior of three-hse retifier systems (EN if < 16 A, if > 16 A); i idustry, however, tyilly ideedet of the orete litio, THDi < 5% is required (t the rted oertig oit); ohmi fudmetl mis ehvior (os (<) > 0.99); regulted outut voltge; deedig o the required level of the outut d voltge reltive to the mis voltge, system with oost-, uk- or uk-oost-tye hrteristi hs to e rovided; msterig of mis hse filure, i.e. for iterrutio or voltge ollse of oe mis hse, otiued oertio t redued ower d uhged siusoidl urret she should e ossile; uidiretiol ower flow, erhs with (limited) ility of retive ower omestio. Ofte, euse of the suly of urely ssive lod (e.g. teleom ower suly), oly uidiretiol eergy oversio hs to e rovided or s for irrft o-ord ower sulies, o feedk of eergy ito the mis is ermitted; omlie with seifitios regrdig eletromgeti, eseilly oduted iterferee emissios y mes of suitle EM filterig. The desigtio three-hse PFC retifier hose i this er imlies oth siusoidl mis urret shig d regultio of the d outut voltge. Here, it should e oted tht tive hrmoi filter [3] of lower rted ower rrged i rllel to ssive retifier system would lso ele siusoidl mis urret, ut o regultio of the outut voltge. Aordigly, euse of the system-relted dvtge of ostt suly voltge of lod side overter, PFC retifier system is ofte referred over tive filterig desite the lrger imlemettio effort, i.e. the oversio of the etire outut ower. Prllel to the develomet of sigle-hse PFC retifier iruits, umerous oets for three-hse PFC retifier systems hve ee roosed d lyzed over the lst two dedes. However, the toologil reltioshis etwee the iruits d omrehesive lssifitio hve reeived reltively little ttetio. Furthermore, the si futio of the iruits ws tyilly treted y se vetor lultio, logous to three-hse drive systems, whih is ot immeditely omrehesile o the sis of kowledge of d ower suly tehology or sigle-hse PFC retifier iruits. The gol of the reset work is hee to develo the oets of three-hse PFC retifiers, strtig from kow sigle-hse PFC retifier systems, d to exli s lerly s ossile their si futio d otrol, without referee to lysis tehiques eig seifi to three-hse overter oets. Detils of the Pulse Width Modultio (PWM) d detiled mthemtil lysis re omitted, i.e. oly the oertig rge of the systems is lrified with regrd to outut voltge d mis urret hse gle. Furthermore, the dimesioig of the ower semiodutors, the mi ssive omoets, d the EM filter is riefly disussed.

4 3 To kee mtters short, the osidertios remi limited to uidiretiol systems d here to those iruits tht ome ito questio with regrd to imlemettio effort for idustril litios or hve lredy foud suh litios. Numerous, oly theoretilly iterestig iruit roosls of high omlexity d/or high omoet lodig re hee ot osidered. rtiulr, o iruits re disussed tht fudmetlly demd low frequey ssive omoets e.g. dimesioed for sixfold mis frequey. Pssive six- or twelve-ulse retifier systems [5], d hyrid retifier iruits with ssive 3r d hrmoi urret ijetio etworks [6], [7] re thus lso ot treted. the followig, i Setio, omrehesive lssifitio of uidiretiol three-hse retifier systems is reseted tht for omleteess lso iludes urely ssive systems. For PFC retifier iruits, divisio is mde etwee iruits tht re fully tive d hyrid, i.e. rtilly mis-ommutted, d rtilly self-ommutted systems. With regrd to the si struture, hsemodulr d diret three-hse systems re distiguished d susequetly treted i more detil i Setio d Setio V with referee to seleted exmles. Art from systems with oost-tye hrteristi, uk-tye PFC retifier systems re lso disussed, whih were ot osidered i [8], ut will e of seil iterest i future i oetio with the hrgig of eletri vehile tteries or the suly of d distriutio grids. The orderig d omlemettio of the kowledge se of three-hse uk-tye PFC retifier systems leds to ew hyrid iruit oet (SWSS Retifier) tht is hrterized y low omlexity of the ower iruit d otrol, d thus of rtiulr iterest for idustril litios. Setio V, i the sese of suort for the dimesioig of the iruits, the urret stresses of the mi iruit omoets re riefly summrized i the form of simle lytil exressios, d the Differetil Mode (OM) d Commo Mode (CM) EM filterig of the systems disussed. Filly, i Setio V, omrtive evlutio of seleted oost-tye d uk-tye PFC retifier systems is reseted, whih is iteded s id for the hoie of oets i idustril develomet rojets. olusio, i Setio V, with regrd to future further iresig requiremets o the effiiey d ower desity of the systems, d the further sredig of tive mis iterfes, reserh sujets i the field of PFC retifier iruits re idetified.. CASSFCATON OF UNDRECTONA THREE-PHASE RECTFER SYSTEMS Fig. 3, lssifitio of uidiretiol three-hse retifier iruits is show tht for omleteess lso iludes urely ssive systems whih oti o tum-off ower semiodutors, i.e. work urely mis-ommutted, d emloy low frequey, i.e. ssive omoets for outut voltge smoothig d mis urret shig d, where lile, mis or uto-trsformers for the hse-shift of severl overter stges workig i rllel or series (multi-ulse retifier iruits). Furthermore, sie here oly diode d ot thyristor iruits re osidered, there is o ossiility of outut voltge regultio. A roximtely siusoidl mis urret d/or rtil elimitio of low frequey hrmois i the iut urret is thus oly otile with multi-ulse systems, i.e. for 12-, 18- or 36-ulse retifier iruits. idustry, multi-ulse retifiers, euse of their low omlexity d gret roustess, re mily used t high ower (> 100 kw) s mis iterfes, where the suly is tyilly diret Sigle Uidiretiol Three-Phse Retifier Systems t Pssive Systems Hyrid Systems Ative PFC Systems Diode Bridge Retifier Systems DC Side dutor Multi-Pulse Retifier Systems (Prtil) Trsf or Autotrsf. Bsd t AC Side dutors Pssive )rd Hrmoi jetio AC or DC Side terhse Trsformer Pssive Pulse Multilitio Eletroi Rete Bsed Retifier Systems Sigle Diode Bridge & DC Side Eletro. d. Sigle Diode Bridge & AC Side Eletro. d. or C. Multi-Pulse Reetilier System Emloyig Eletro. terhse Trsr. Comitio of Diode Retifier d DC/DC Coverter Systems Boost-Tye l Sigle Diode Bridge & DC-DC Outut Stge Hir-Cotrolled Diode Bridge Multi-Pulse Retifier System (Trsr. or Autotrsr.-Bsed) with DC/DC Outut Stge EmJ. AC Side or DC Side d. Buk-Tye 3rd Hrmoi jetio Systems Pssiv/Hyr. or Ative 3rd H. jel. Network Boost- or Buk-Tye or Uotrolled Outut Diode Bridge or Muhiuls System with 3rd Hrmoi j. (ulse Muhi1.) Sigle Diode Bridge & DC-DC Outut Stge Hr-Cotrolled Diode Bridge mressed ut Curret (Boost-Tye) DiretThree-Phse Systems Phse-Modulr mressed ut Voltge (Buk-Tye) Systems V-Reetilier or 6-Reetilier - V-Arrgemet with Coverter Artilieil Str-Poit Coetio 312-Phse Seo-Trsr.-Bsed DCM CeM l DVM CVM l Sigle-Swith Two-evel Reetfier Sigle-Swith Three-Swith Retifier Rlilier - Y- or6-switeh Coverter Six-Swith Retifier Two-Swith Reelilier Reetilier Three-evel Coverter (VENNA Retifier) Six-Swith Coverter l t Fig. 3. Clssifitio of (uidiretiol) three-hse retifier toologies ito ssive, hyrid, d tive systems with oost- or uk-tye hrteristi. For eh retifier sugrou, referees to ulitios re give i [4], i whih the orresodig iruit oet ws reseted first or detiled desritio is rovided. The oxes of the overter grous, disussed i this er, re highlighted y shdig. For detils of retifier toologies ot disussed i this er, lese see lso [4].

5 4 from the medium voltge mis whose low ier imede llows higher iut urret hrmois to e eted. The oulig d/or rtil itegrtio of ssive retifier d of tive iruit rt imlemeted with ower semiodutors tht e tively swithed off, leds to hyrid retifier iruits. These systems fudmetlly llow regultio of the outut voltge d siusoidl otrol of the mis urret; however, limittio to voltge regultio is ossile (e.g. i the se of diode ridge with dowstrem d-d overter) or to siusoidl urret shig (tive-filter-tye 3 rd hrmoi urret ijetio, f. Se. V or [9]-[14]). Furthermore, low frequey filter omoets of ssive retifier systems my e reled/emulted y high-frequey PWM overters of reltively low rted ower (Eletroi dutor [15], [16]), e.g. i the sese of irese of the ower desity. With side rrgemet of these eletroi retes, vi hge i the idute or ite vlue i oertio, limited ossiility of voltge regultio exists (Mgeti Eergy Reovery Swith (MERS) oet [17], [18]). 3 rd hrmoi ijetio oets form mjor grou of hyrid retifier iruits. Here, urret is ijeted y ssive or tive ijetio etwork lwys ito tht hse whih would ot rry urret i se of ovetiol diode ridge retifitio. The urret wveforms of the two other hses re shed i suh wy tht s result, siusoidl urret flows i ll hses. The retifier futio of these systems is imlemeted y diode ridge o the iut side. The tive etwork for urret shig, ijetio, d voltge regultio, rrged o the d side, my thus e osidered essetilly s d-d overter workig o time-vryig (six-ulse) d iut voltge. The iruits re hee reltively simle, i.e. my e lyzed without seifi kowledge of three-hse overter systems d exhiit reltively low omlexity, lso regrdig otrol. The essetil hrteristis of hyrid retifier iruits my thus e summrized s follows: mis-ommutted (diode iruits) d fore-ommutted, iruit setios imlemeted with ower semiodutors tht e tively swithed off; low frequey d/or swithig frequey ssive omoets; outut voltge regultio d/or siusoidl mis urret shig y tur-off ower semiodutors. the reset work, oly those hyrid retifier iruits re osidered whih exhiit regulted outut voltge d siusoidl mis urret, d exlusively swithig frequey ssive omoets. tegrtio of tur-off ower semiodutors ito the ridge-legs of ssive system filly leds to tive PFC retifier systems. Essetil fetures of these systems re: fored ommuttio (oly for systems with imressed outut urret rtly turl ommuttios our, deedig o the ositio of the swithig istt i the mis eriod); exlusively swithig frequey ssive omoets; regulted outut voltge. As desried i more detil i Se. V, these systems exhiit i geerl ridge toologies d here ridge-legs of sme struture, i.e. hse symmetry, d similr ofigurtio of the ower semiodutors i the ositive (oeted to the ositive outut voltge us) d egtive ridge hlves, i.e. ridge symmetry. Art from these diret three-hse versios (f. Fig. 3), however, imlemettio is lso ossile vi omitio of siglehse PFC retifier systems i str(y)- or delt()-oetio [f. Figs. Se) d ()]. These hse-modulr versios, however, led to three idividul d outut voltges, i.e. sigle outut voltge oly e formed vi isolted d-d overters tht re oeted to the retifier oututs. A dvtge of the hse-modulr versio is U, 650 V V V Phse Boost-Tye PFC Retifier o 200V ',, : 3-Phse Buk-Tye PFC Retifier 400 V 480 V UN,,m" Fig. 4. Outut voltge rge of diret three-hse PFC retifier systems with oost- or uk-tye hrteristi i deedee of the rms lie-tolie mis voltge UN rms (osidered mis voltge rge: UN rms = 200 V V); UN ;1 deomites the ek vlue of the lie-to-iie voltge. dditio, the lwer outut voltge limit of sigle-hse oost-tye PFC retifier system (U > l/v'3un,ll), oeted etwee mis hse d the mis eutrl, is show. the ossiility of relizig three-hse system strtig from existig lredy develoed sigle-hse systems. However, it must e tke ito out tht with the str-oetio oulig of the hse system results. For the delt-oetio, the high iut voltge of the modules hs to e osidered, whih is defied y the mis lie-to-lie voltge d ot y the hse voltge. Art from the toologil distitio, lssifitio of the systems must lso e rried out with regrd to the ville outut voltge rge, i.e. fudmetlly ito iruits with oost- or uktye hrteristi. As show i Fig. 4, the lower or uer outut voltge limits of the systems re defied y the mis lie-to-lie voltge. The voltge rge, ot overed y the two si overter forms, is usully relized i idustry y mes of dowstrem dd overter with oost- or uk-tye hrteristi. Altertively, three-hse extesio of uk-oost [19], Cuk- or SEPC-overters [20] ould e used. Beuse of the high omlexity of the resultig iruit, however, this roh is oly of theoretil iterest d is hee ot desried i more detil. With regrd to hse-modulr retifiers, it must e oited out tht uk-tye overter systems ele urret shig oly i rt of the mis eriod [21]. Hee, for siusoidl mis urret, oost futio must e rovided whih results i lower limit of the outut voltges of the modules. Note: Systems with glvi isoltio of the outut voltge re ot treted i this er. my ses, isoltio is hieved y d-d outut stge t high frequey, or is required diretly t the suly of the systems for voltge dttio, e.g. for oetio to the medium voltge level. Altertively, trsformer my e itegrted diretly ito the retifier struture. Suh high frequey isolted three-hse -d mtrix overter oets [22]-[24], however, re hrterized y reltively high omlexity of the ower iruit d modultio d hee re of limited imorte for idustril litios.. PHASE-MODUAR RECTFERS Strtig from the si iruits of symmetril three-hse lods, three-hse PFC retifier systems e imlemeted y str- or delt-oetio of sigle-hse PFC retifiers. The hse-modulr systems thus formed will e termed i the followig Y- or -retifiers ordig to the iruit struture. The hse modules here my exhiit ovetiol toology or ould e imlemeted s ridgeless, i.e.

6 5 P l : U, J : U, J C C : U, J ) UN U.N' - - N N' ) Fig. 5. Blok digrm of hse-modulr PFC retifier systems [25]-[27]. ) Str(Y)-oetio Y-retifier d ) delt()-oetio -retifier with outut side isolted d-d overters. sted of ommo EM iut filter for ll hses s used for ) d ), i terms of full modulrity, lso serte EM filters ould e imlemeted for eh retifier module. dul-oost overters, or -swith overters (f. Fig. 11). They my oti EM filter or dvtgeously, three-hse EM filter ould e istlled ommo to ll hse systems. A. Y-Retifier Fig. 6 shows the iruit toology of Y-retifier with ridgeless toology of the hse modules d equivlet iruit of the side system rt. f the EM filter is three-hse (ot show i Fig. 6) d the str-oit N' is ot oeted to rtifiil str-oit, whih ould e formed e.g. y filter itors, swithig frequey voltge UN'N ours etwee N' d the mis str-oit N. Aordig to di dt = UN - ( UN' + UN'N ) di - = UN - (U5N' + UN'N) dt die dt = UeN - ( UN' + UN'N ) the imressio of the urrets is vi the differees of the mis hse voltges d the voltges UiN' (i =,, ) formed t the iut of the retifier stges, so tht the str-oit voltge UN'N with osidertio of d... ( + + e ) = 0 (3) dt results i 1 UN'N = - "3 (UN' + u5n' + UN'). (4) Therefore, with free str-oit N', rt of the retifier iut voltge U,N' dvtgeously does ot form urret rile, so tht the vlues of the oost idute my e redued omred to (2) Fig. 6. ) Bsi struture of the Y-retifier. ) Equivlet iruit of the system rt without the EM iut filter. fixed str-oit for the sme rile mlitude. This dvtge is gied t the exese of CM voltge UN'N of the modules, whih requires rorite CM filter. As lerly show y Fig. 6() d with regrd to the fudmetl of the iut voltge required for the imressio of the iut urret, the sme oditios re reset for the hse modules s for siglehse PFC retifiers sulied from mis hse. Therefore, desite the high ek vlue of the lie-to-lie voltge of the Euroe lowvoltge grid (UN, l = 565 V d/or UN, l, rms = 400 V), the outut ) i : U, : U, 0 60 wt : U, i : U, C : u, ) (100) (011) Fig. 7. ) Time ehvior of the istteous fudmetl ower of the hses of Y-retifier. ) Redudt swithig sttes oerig the resultig vritio of the hse urrets for i > 0, i < 0, ie < 0 [vlid withi 'PN = (-30, +30 )], whih e used for lig the d outut voltges u,, U,, u,e of the hse modules.

7 6 u* Crrier sigl o - Uo= 1 /3 U,i ' '----' l Averge rav;;"k==== DC Fig. 8. Struture of the Y-retifier otrol: suerimosed otrol of the verge vlue of the d outut voltges U,, u,, u, of the hse modules with suordite otrol of the hse urrets d 2-out-of-3 lig of the d outut voltges of the hse modules. Equl sigl ths of ll hses re rereseted y doule lies. The deedee of the formtio of the voltges u,n' o the sig of the resetive hse urrets ij is osidered y iversio of the swithig sigls for egtive hse urrets. voltge of the hse modules e seleted e.g. t U,i = 400 V d/or the ower trsistors my e relized with 600 V suerjutio ower MOSFETs. The otrol struture of the system is show i Fig. 8. The referee odute G* is defied y the outut voltge otroller K u (s). Multilitio of G* y the ormlized mis hse voltges leds to the hse urret referee vlues it to e set y the suordite urret otrollers Kr(s). With regrd to the fudmetl iut urret, the system thus ehves s symmetril ohmi lod with resistes R = ljg* i str-oetio. Aordigly, for symmetril mis, there ours i hse with lower voltge lower urret mlitude, or redued suly of ower to the resetive outut. This must e osidered for settig the referee vlue of dowstrem d-d overter. Beuse of the hse-modulr struture, three outut voltges re to e regulted. Therefore, the voltge otrol is slit ito two rts. O the oe hd, the ower drw from the mis, i.e. G* is defied from the verge otrol error of the three outut voltges U,i. O the other hd, lig of the outut voltges is imlemeted, wherey i eh se oly the hse with the highest ositive d the highest egtive voltge vlue is tke ito out [25], [28], [29]. As show i Fig. 7, oly for these hses, e.g. d, higher istteous outut ower flow is reset d hee the ossiility of hgig the outut voltge vlue. Deedet o the differee etwee U, d U,, offset of the referee hse urret vlues i is formed whih, however, ot e set y the hse urret otrollers euse of the free str-oit N', i + i + i = 0 is ulterle. The hse urrets thus kee their siusoidl she d the symmetry to the time xis. However, s ould e show y more detiled lysis, for i > 0, the swithig stte (100) is mily used isted of (011) for the formtio of the voltges UiW required for urret imressio. Similrly, for i < 0 iresigly (011) is emloyed isted of (100). Both swithig sttes re redudt with reset to the voltge formtio d result i equl voltges U, it, u. However, for (100), rimrily the outut itor C is hrged d for (011) the itor C d thus equliztio of U, d U, is eled. For (100), ower lso flows to outut U,, ut euse of the low istteous vlue of i i 'PN = WNt = (0,60 ) d/or the ssoited low outut urret, the outut voltge u, is ot sigifitly hged [29]. oetio with the lig of the outut voltges it should e oited out tht symmetril mis urret system e surrisigly lso mitied for uequl distriutio of the iut ower to the three oututs, i.e. is lso ossile for symmetrilly loded oututs. To summrize, the totl ower drw from the three-hse mis is set y G* d the distriutio of the ower to the hses is determied y i. Shiftig the ower etwee lwys oly two hses hs the dvtge tht the fulfillmet of i + i + i = 0 does ot eed to e seilly oserved sie the third hse lwys rry resultig urret. This roedure thus exhiits, omred to ltertive oets [27], greter stility rge d sigifitly lower rmeter sesitivity or greter roustess. t should e emhsized tht the lig roedures desried my e emloyed oly i the se of ommo EM filter for ll hses d/or for free str-oit N, whih llows vritio of UN'N with swithig frequey. Here, the lig of the outut itor voltges d ot vishig (low frequey) voltge differee of N' from the mis str-oit N is of imorte. For emloyig idividul EM filters er module, o the other hd, oly low frequey otetil hges i N' our d the lig of the hse uits e with referee to the stroit voltge [31]. Altertively, d/or i dditio to lig, N' lso e oeted to rtifiil str-oit tht is formed y trsformer iruit of low zero sequee imede d e loded with zero sequee urret omoet ourrig i se Fig. 9. Hrdwre demostrtor of ) ultr-effiiet Y-retifier hse module (omil effiiey 'T/om > 99%) d ) of ultr-omt Y retifier hse module (ower desity > 5 kw/dm 3 = 82 W/i 3 ). The omil outut ower of oth systems is 3.3 kw [30]. )

8 7 of symmetry [32], [33]. The disdvtge of this oet, silly kow from the str-oit formtio i eletril etworks, however, lies i the requiremet of dditiol idutive omoet of reltively lrge volume d weight. Fig. 9(), the demostrtor of highly omt versio of sigle-hse ridgeless PFC retifier system [f. Fig. 11()] is show; Fig. 9() shows highly effiiet versio of the sme retifier toology. Strtig from these systems, Y-retifiers with ower desities of u to 5 kw/dm 3 or effiieies of TJ > 99% my e relized. + :1'-' : j + "eo' B.!" -Retifier For delt-oetio of the PFC retifier modules [f. Fig. 5()], the susystems re deouled, i otrst to the str-oetio (Yretifier). The otrol therefore e rried out, idividully for eh susystem, i the sme wy s for sigle-hse PFC retifiers. Blig of the modules with reset to ower osumtio is of dvtge i the sese of symmetril lodig of the mis, ut is ot solutely eessry. However, the lie-to-lie voltge of the mis ers t the iut to the modules. Hee, reltively high outut voltge U,i > v'2 UN,ll,rms (ty. U,i = 700 V V for the Euroe low-voltge mis, tkig ito out voltge toleres) or high lokig ility of the ower semiodutors hs to e rovided. Altertively, the semiodutor lokig voltge stress ould e hlved y mes of three-level toology. Also uk overter ould e led i frot of eh oost overter stge, i.e. i eh hse, uk-oost overter with ommo idutor ould e imlemeted. This would llow the outut voltge level of the idividul modules to e hose similr s for the Y retifier with 400 V [34]. The, oly the trsistors of the uk stge hve to e desiged for lie-to-lie voltges. However, dditiol ower trsistor the lies i the urret th, whih leds to higher odutio losses. At the iut of the retifier stges of the!"-retifier modules, for two-level imlemettio of the oost outut stges, voltges (Sij desigtes the swithig stte of the ower trsistors Sij; Z, J = {,, }) re formed tht, rt from the swithig stte S = Se = Se = 0, oti swithig frequey zero sequee voltge omoet uo, U" = U + Uo Ue = U5 e + Uo U = u + Uo. As e immeditely see vi delt-str trsformtio for the formtio of the hse urrets ii, oly the voltges U' u5 e ' u, d/or the equivlet str-oit hse voltges with 1 ( ) U"N = "3 U" - U 1 ( ' ) UN = "3 ue - U" 1 ( ' ) UN = "3 U - ue re effetive. The zero sequee voltge omoet 1 Uo = "3 (U" + ue + u), (5) (6) (7) (8) (9) ) Fig. 10. ) Bsi struture of the -retifier, with thyristor ridges t the iut of the modules to rovide the omil outut ower i se of hse loss; three-level oost stges re emloyed to redue the voltge stress of the ower semiodutors. ) Simlified side equivlet iruit with the zero sequee omoet io of the iut urret riles of the modules. thus drives oly swithig-frequey urret withi the deltiruit. This mes tht for three-hse EM filter, the modultio is est desiged through suitle syhroiztio of the rrier sigls of the modules suh tht Uo is mximized or mximum frtio!"io of the swithig-frequey iut urret rile of the modules is held withi the delt iruit [27], [35]. There the results miimum rile of the hse urrets ii, d the EM filter effort is miimized. However, this dvtge should e weighed gist full modulrity/ideedee of the susystems (lso regrdig swithig d modultio), tht is otile oly with the ofigurtio of idividul EM filter er module. A essetil dvtge of the!"-retifier is the vilility of the full rted ower eve for filure of oe mis hse. For this urose, the modules must e oeted s i Fig. lo() vi threehse thyristor ridges to the mis, d the thyristor ridges, o iterrutio of mis hse, re swithed over to the two remiig hses (f. [27], [34]). However, this oet is lile oly for suitly high lodig ity of the remiig mis hses. C. Disussio Phse-modulr systems llow the kowledge o sigle-hse PFC retifier systems to e exloited reltively diretly d/or llow for the develomet of three-hse PFC retifier system with low effort. However, this dvtge e relized oly with fully modulr struture, i.e. with the rrgemet of idividul EM filter er module, so tht the modultio methods for the redutio of rile i the hse urrets desried ove ot e used. However, i y Uii + :l"-

9 se, lig of the modules is required to ssure symmetril lodig of the mis. Here, the dditiol effort for mesuremet d sigl roessig required for the Y-retifier should e oted. Bsilly, due to the modulr struture, three idividul d outut voltges re formed tht oly with the id of dowstrem isolted d-d overters e emloyed for the suly of sigle lod. Furthermore, eh module requires filterig of the ower flow, whih ulstes with twie the mis frequey, i.e. eletrolyti itors of suitly high ite must e rovided o the outut side. O the other hd, the ssure of mis-holdu to mster the filure of mis voltge hlf-yle ywy requires reltively high outut ite. Furthermore, y divisio of the overll system ito three susystems, omt ostrutio is suorted d the oolig of the ower omoets is simlified. The essetil dvtge of the Y-retifier is the lower voltge stress of the ower semiodutors or the reltively low level of the outut d voltges. However,. diret oulig of the hse modules is reset, whih eseilly for msterig of hse filure requires lose o-orditio of the modules d filly otrol iruit for the overll system. Hee, the dvtge of modulrity ot e used for the otrol. dustrilly, the system will thus roly remi of mior imorte. otrst, the modules of the -retifier work i deouled mer, d vi reltively simle exsio of the iruit toology, the full rted ower is ville o hse filure. The disdvtge of the reltively high outut voltge d/or required lokig voltge ility of the ower semiodutors i the modules ought to e llevited i future y the vilility of 1200 V SiC ower JFETs or SiC ower MOSFETs. The lso dditiol uk overter stge ould e imlemeted for eh module, whih eles to miti the outut voltge level give y sigle-hse PFC systems d therewith the use of lredy develoed d-d overter iruits. O the whole, the, exellet otetil for idustril litio of this system e disered. V. DRECT THREE-PHASE PWM RECTFER TOPOOGES the followig, the toologies of imortt diret three-hse oost- d uk-tye retifier systems will e derived d riefly desried with regrd to their si futio d otrol. Boost systems will e develoed y three-hse extesio of kow sigle-hse oost-tye PFC iruits (f. Fig. H d/or Fig. 26 i [30]); the iruit strutures of the uk-tye systems follow y extesio of ssive three-hse diode retifiers with tum-off ower semiodutors. geerl, the defiitio of three-hse overter toologies, should e uder osidertio of high level of symmetry of the resultig iruit struture. Beuse of the idetil ture of the hses of the sulyig mis (ure voltges of sme she d mlitude), it is ovious to rovide the sme struture for the iruit rhes oeted to the hse termils (hse symmetry). O the other hd, the symmetry of the ositive d egtive hlf-yles of the iut hse urrets to e imressed y the retifier system turlly leds to idetil rrgemet of ower semiodutors i the ositive d the egtive hlf of the hse-legs. oetio with the d voltge to e formed, orresodig toologilly to ositive d egtive outut termil, there thus results threehse ridge toology with symmetril ositive d egtive ridge hlves (ridge symmetry). For d-d overter, oeted to the retifier outut, this symmetry does ot eessrily eed to e mitied. Here, deisio ould e mde e.g. y lysis d omriso of the CM EM emissios d the odutio losses of symmetril or symmetril toology. t should e oted tht retifier systems whih violte oe or oth symmetry requiremets, e.g. with the im of reduig the imlemettio effort, lso ele the imressio of mis urrets d i. N ) N ) i N ) J 1 J : j"" : j""' : j"" Fig. 11. Sigle-hse oost-tye PFC retifier systems; the three-hse extesios of the iruits leds to diret three-hse hyrid or tive PFC retifier systems with oost-tye hrteristi. ) Covetiol PFC retifier, ) ridgeless (dul-oost) PFC retifier, d ) PFC retifier with -swith. the formtio of regulted outut d voltge. However, siusoidl she of the hse urrets is ossily ot fesile (f. Se. V-A2 for systems showig hse symmetry ut o ridge symmetry), d/or the outut voltge or the modultio rge of the iruits is limited omred to symmetri strutures. Furthermore, i geerl more omlex modultio results (f. e.g. [36] s exmle of system with ridge symmetry ut o hse symmetry). dditio, with missig hse or ridge symmetry, differig lodigs of the idividul ower semiodutors our. Asymmetril iruits re hee treted withi the soe of this work oly s itermedite ste i the derivtio of symmetril iruits. the followig for ll iruits, i.e. lso for systems emloyig ower semiodutors with high lokig voltge stress (defied y the mis lie-to-lie voltge), ower MOSFETs re show s swithig elemets. This should oit out the geerlly existig requiremet of high swithig frequey or high ower desity. A imlemettio of the ower semiodutors would e ossile with Si suer-jutio MOSFETs with lokig voltge of 900 V [37] or i future with SiC JFETs (i sode ofigurtio, [38]-[40]) or SiC MOSFETs [41]). Altertively, 1200 V GBTs, ossily with SiC freewheelig diodes ould lso e emloyed, however, with osiderly lower swithig frequey, due to the reltively high swith-off losses. A. Boost-Tye Systems A three-hse extesio of the ovetiol sigle-hse oosttye PFC retifier [f. Fig. H()], i.e. the dditio of third ridgeleg to the iut retifier ridge, results i hyrid retifier struture show i Fig. 12(). The system eles otrol of the outut voltge, ut the iut urret exhiits the hrteristi lok she of ssive diode retifitio with THDi 30% [f. Fig. 12()].

10 9 i " j l ) 800 P 20 $ <l) OJ) is 10 '" <l) t: ::l 0 U ) t (ms) i ) j : "," $ <l) OJ) 0 0 i:: <l) is t: 0 ::l ::> u d) t (ms) Fig. 12. Three-hse extesio of the sigle-hse system show i Fig. 11(). ) System struture d ) orresodig mis voltge d mis urret if the d-d oost overter stge oertes i Cotiuous Codutio Mode (CCM). ) System struture if the oost idutor is shifted to the side d divided over the hses. d) Corresodig mis voltge d urret Ci" refers to the lol verge vlue of the hse urret i) for oertio of the system i Disotiuous Codutio Mode (DCM). f the oost idute is moved to the side d distriuted over the hses [f. Fig. 12()] d the mode of oertio is hged to OCM t ostt duty yle of the ower trsistors, the swithig frequey ek vlues of the disotiuous hse urrets follow siusoidl eveloe. However, s show y more detiled lysis, low-frequey hrmois of the hse urrets otiue to our [42]. A modultio of the trsistor swith-o time with sixfold mis frequey [43], [44] d/or oertio i Boudry Codutio Mode (BCM) lso ot omletely elimite the low-frequey urret distortio, sie the smllest hse urret i eh se lwys rehes zero rior to the other two hse urrets d thus exhiits zero urret itervl t swithig frequey [42]. Aordigly, reltively high urret qulity is oly ttile for high voltge trsfer rtios d/or reltively short demgetiztio time of the idutors omred to the trsistor swith-o time, i.e. for outut voltges U > 1 kv whe oertig i the Euroe low-voltge mis. Beuse of this limittio, d the high ek urret lodig of the ower semiodutors d the lrge EM filter effort, this iruit oet hs ot ee suessful i idustry. Fudmetlly, it should lso e oted here tht for three-hse overter systems, euse of the reltively high ower, oertio i CCM is lerly referle. Aordigly, the hse-shifted oertio of severl OCM overter stges, whih would e ossile for the system show i Fig. 12(), [45], [46], d is frequetly used for sigle-hse systems (for ower levels u to tyo 1 kw) is of mior imorte. 1) Hyrid 3 rd Hrmoi Curret jetio PFC Retifier: A imrovemet i the iut urret qulity of the iruit i Fig. 12() is oly ossile y extesio of the otrollility, i.e. y dditio of further ower trsistor (f. Fig. 13). The urrets i the ositive d egtive d uses, i+ d i_, the e otrolled ideedetly d roortiol to the two hse voltges ivolved i eh se i the formtio of the outut voltge of the diode ridge. f the differee of i+ d i_ is the fed k vi urret ijetio etwork (three four-qudrt swithes, of whih i eh se oly oe is swithed o) ito the mis hse whih would ot rry urret for simle diode retifitio, siusoidl urret she e ssured for ll mis hses s show elow [47]. Beuse of the symmetries of the sulyig mis voltge system, the mthemtil roof of the siusoidl urret shig e limited to 60 -wide itervl of the mis eriod with e.g. UN > UN > UN, for whih the ijetio swith SY (i geerl, the ijetio swith of the hse with the smllest solute voltge vlue) is otiuously swithed o. By suitle modultio of S+, urret roortiol to the mis hse voltge UN the e imressed i + or i the odutig diode D+, (10) wherey for the lol verge, i.e. the fudmetl frequey omoet (11) hs to ly. Corresodigly, y suitle modultio of S_, urret - = i (12) roortiol to UN e imressed i _ or D- with (13) The fudmetl frequey odute G*, determiig the retifier iut d/or ower, is therey defied y the outut voltge otroller. The swithig of S+ d S_ must ot e rried out i o-ordited mer sie freewheelig of i+ d/or i_ is lwys ossile vi the freewheelig diodes D+ d D_ or the diodes tirllel to S+ d S_ d the ijetio swith SY. For the ijetio urret iy follows y Kirhhoffs' urret lw i+ - - iy = 0 or i + i - iy = 0, d o osidertio of i = -iy (ijetio swith SY is swithed o) i =- (i +i) d Z = - (Z +Z). (14) With (11), (12) d Uo + UO + UO = 0 (symmetril siusoidl mis hse voltges) there the results (15) Aordigly, for ll hses urret she roortiol to the orresodig mis hse voltge is hieved. (Equtio (14) ould lso

11 10 N ) i i+ D+ s+ s- ) un i i_ D_ i i s+ l i un,, Y : : C P : j"...j. =i - '. Fig. 13. ) Bsi struture of the hyrid 3rd hrmoi urret ijetio retifier [47]. ) ol verge equivlet iruit of the tive system rt for UN > un > UN. ) Wveforms of the hse voltge UN, the orresodig hse urret i, d the ijeted urret v. t would e dvtgeous to dd seod freewheelig diode D _ i the egtive us to miimize the swithig frequey em voltge vritio of the outut. However, this would result i iresed odutio losses. e stted diretly with referee to the urret sum i + i + i = 0 fored to zero euse of the free mis str-oit N, ut ws derived here strtig from the d side i order to illustrte the futio of the urret ijetio.) As would e ler from lysis of further 60 setios of the mis eriod, the ijetio urret iv exhiits threefold mis frequey. Thus, d i the sese of the lssifitio hose here, the retifier system should e lled hyrid 3 rd hrmoi urret ijetio P FC retifier. The feedk d/or ijetio of urret ours i Fig. 13 lwys ito oly oe hse, whih is seleted y roer gtig of the fourqudrt ijetio swithes. Altertively, the urret ijetio ould lso e rried out y mes of urely ssive ijetio etwork, e.g. resoe etwork or trsformer iruit with low zero sequee imede (f. MNNESOTA Retifier, [48]). However, it the ot e hose i whih hse urret is ijeted, ut the feedk urret oly e divided u ito equl rts tht re the ijeted ito the hses. As show i [4], siusoidl hse urret wveform roortiol to the mis voltge lso e ttied therewith. However, the ssive ijetio etwork shows reltively lrge volume d weight. Furthermore, i omriso to the iruit i Fig. 13() threefold mlitude of the ijetio urret is required, so tht the semiodutors of the overter stges tht imress the wt urrets i+ d i_ must e dimesioed for sigifitly higher urret lodig. Hee, osiderig the high ower desity ofte demded i idustry, tive urret ijetio is lerly referle. With regrd to the oertig rge of the system it must e stted tht the outut voltge must e seleted sigifitly higher th the ek vlue of the lie-to-lie mis voltge, i.e. s U >.J6 UN,,rms s give i [49],. 595, Se. -D. As show ove, ohmi fudmetl mis ehvior e ttied, ut o hse dislemet of the mis urret reltive to the mis voltge is ossile. However, it hs to e emhsized tht the system llows otiutio of oertio with siusoidl urret she (t redued ower) o filure of mis hse. All ijetio swithes the hve to e loked d simulteous gtig of S+ d S_ rovided, so tht the sme oditios exist s for sigle-hse PFC retifier system oertig o mis lie-to-lie voltge. Hyrid 3 rd Hrmoi Curret ijetio Ative-Filter Retifier: Strtig from Fig. 13() d followig iruit oet kow from ssive ijetio etworks [11], [50], the two idutors + d _ ould e lumed together ito sigle idutor v lyig i the ijetio th. The resultig iruit struture is show i Fig. 14, [13], [14]. The outut diodes D+ d D_ ow e omitted, sie simulteous swithig o of the trsistors S+ or S_ would led to short-iruitig of the mis, i otrst to Fig. 13, d is thus ot llowed. Aordigly, the systems shows reltively low imlemettio effort, however, t the exese of missig outut voltge otrol. As e immeditely see from the see of diodes D+ d D_, the outut voltge is ow determied diretly y the diode ridge d hee exhiits six-ulse she. However, s will e show elow, ssumig ostt ower lod, the ossiility of imressig siusoidl mis hse urrets remis. Thus the system does ot rovide the full futiolity of outut voltge-regulted PFC retifier, ut the futio of ssive retifier with itegrted tive filter d hee should e lled hyrid 3 rd hrmoi urret ijetio tive-filter retifier. f lod with ostt ower osumtio is sulied, there results lod urret vryig i tihse to the six-ulse retifier outut voltge. As show elow, this leds to siusoidl she of ll mis hse urrets fter overlyig with the ijetio urret. Cosider 60 itervl of the mis eriod with UN > UN > UN s i Se. V-A. For the urret to e ijeted ito hse (16) lies. The mis frequey voltge dro ross the idutor v i first roximtio e egleted for the formtio of v, U y = 0. (17) Aordigly, we hve for the voltge to e formed t the outut of the ridge-leg (18) f i y se oe of the trsistors S+ or S_ is swithed o, + + _ = 1 lies for the reltive swith-o times or _ = d hee, for the voltge formtio of the ridge-leg U y = +UN + (1 - +) UN = +u + UN. (19) Corresodigly, there follows the duty yle + with (19) s d thus for the urret i S+ U s+ = +v. = -+. = -+ G* UN = -G* UN - U (20) (21)

12 11 ) i N Jy : : _ './""':-..../""':-.... w Fig. 14. ) Hyrid 3rd hrmoi urret ijetio tive filter retifier ordig to [4], [14]. ) ol verge equivlet iruit of the tive rt of the system for UN > un > UeN. ) Wveform of the hse voltge UN, the hse urret, the ijetio urret y, d the lod urret i = Po/u t ostt outut ower Po. Cosiderig the fudmetl iut urrets tht hve to e geerted t the iut l. = G*UN l. = G*UN, l.e = G*UeN (22) the low frequey omoet of the urret osumtio of the ostt ower lod e exressed vi i = Po = l.ue + l.ue UNUe + UNUe = G* (23) Ue Ue Ue Ue) * (24) ( Ue For the resultt low frequey urret omoet drw from hse, there the follows with (21) =G UN +UN - (25) diretly the desired (siusoidl) wveform roortiol to the mis voltge. Furthermore, there lies with (16), (25), (26) d UN + UN + UeN = 0 for hse (27) so tht the siusoidl she of ll hse urrets hs ee roved. t must e emhsized tht the iruit i Fig. 14() llows siusoidl regultio of the mis urrets oly i se overter outut stge, e.g. i the form of d-d overter or PWM iverter stge, is reset tht ssures ostt ower osumtio. The imlemettio effort of this oet should therefore e evluted oly with regrd to the overll system. Furthermore, it should e oted tht the wveform of i required for the formtio of siusoidl mis urret oly results if o smoothig itor (of higher ite) is oeted etwee ostt ower lod d retifier stge. od vritios re thus ssed o diretly to the mis. 2)!::"-Swith Retifier: f the iruit i Fig. U(e) is exteded with third ridge-leg d delt-oetio of four-qudrt swithes is dded with reset to the oertig riile d the three-hse symmetry, there follows the toology i Fig. 15() of the!::"-swith retifier [51]-[53]. The four qudrt swithes ele to ifluee the odutio stte of the diode retifier d thus to otrol the side voltge formtio vi ulse width modultio. The!::"-swith retifier is tive PFC retifier iruit sie the ommuttio of the diode ridge ours, i otrst to the iruit i Fig. 13, t swithig frequey. Similr to sigle-hse PFC retifier iruits, the voltge formed t the iut of retifier ridge-leg, e.g. UM' (M' desigtes virtul mid-oit of the outut voltge), deeds o the swithig stte of the (etire) overter d o the diretio of the hse urret i. This does ot rereset limittio sie urret i i hse with the mis voltge UN hs to e imressed. Negletig the voltge dro ross the iut idutor UN UN hs to e esured. Therewith, i = G*UN d UN lwys hve the sme olrity. Exet for simulteous swith o of ll four-qudrt swithes (sh = She = Se = 1), oe hse termil, e.g. ii, is lwys oeted with the ositive or egtive outut voltge us, or. Aordigly, the iruit shows two-level hrteristi with regrd to the voltge formtio. As is immeditely ler osiderig the diode retifitio o the iut side, the outut voltge hs to e seleted ordig to U > v'2 UN,,rms. (28) se of filure of mis hse, the two four-qudrt swithes ssoited to the hse tht filed hve to e ermetly disled. The gi sigle-hse PFC retifier iruit with side swith is reset, whih oertes however from lie-to-lie voltge, ut still llows regultio of the outut voltge d siusoidl imressio of the mis urrets. t is iterestig to uderstd tht the oertig rge of the!::,. swith retifier is ot restrited to ohmi fudmetl mis ehvior (s ould e exeted due to the diode retifier) ut llows the formtio of urret hse dislemets i the gulr itervl <> = (-30, +30 ). (29) This e lrified y more detiled lysis of the odutio sttes of the system, whih my e restrited to 60 itervl due to the symmetry of the three-hse mis system. The equivlet iruit of the tive rt of the!::"-swith retifier is show i Fig. 15() for i > 0, i < 0, ie < O. t is ssumed tht oly the four-qudrt swithes oeted to the hse with the lrgest solute voltge vlue is swithed [52]. For the imressio of i d ie, Sh d S re swithed suh tht ue d Uh omeste the lie-to-lie voltges Ue > 0 d U >

13 12 i. C : j Sm ) ) uij u, uin ) l S C : U Fig. 15. ) Ciruit toology of the -swith retifier [51]. Also ridge ofigurtio of six trsistors with ti rllel diodes d short-iruited outut termils ould e used isted of delt-oetio of four-qudrt swithes. ) Equivlet iruit of the system for i > 0, i < 0, i < 0, i.e. for 'PN = (-30, +30 ). ) Wveforms of the mis hse voltges, lol verge hse urret 2, d setios of the lie-to-lie voltges. O. The voltges u d u e formed for the give olrities of the urrets. However, s result of the hse dislemet etwee the hse qutities d the lie-to-lie qutities of ±30 (omre e.g. UN d U or UN d u) U > 0 d U > 0 lies, ot oly for 'PN = (-30,30 ) ut lso for 'PN = (-60,60 ). Therewith, the le of the voltges U u > 0 d U u > 0 e lso hieved for hse voltges with dislemet of ±30 gist the hse urret system. wt t is dvtgeous to use the iruit i Fig. 16 for the otrol of the system. There, ll hse urrets re otiuously otrolled oosed to ltertive otrol oets [54]. The voltge referee vlues formed t the outut of the hse urret otrollers re overted with y- trsformtio ito the effetively djustle lie-to-lie voltge referee vlues * * * u = UN - UN U5 = U5N - UN. * * * U. = UN - U :N (30) The olrity of the hse urrets or hse voltges, i.e. the iformtio of the tul 60 setor of the mis eriod hs the to e osidered for the otrol of the idividul ower trsistors, however, o setor deedet swith-over of the etire otrol struture is required. This results i higher iut urret qulity s swith-over of the otrol, otetilly uses urret distortios t the swithig istts. 3) VENNA Retifier: f the delt()-oetio of the four-qudrt otrol swithes of the -swith retifier is reled y str-oetio, d the stroit of the swith rrgemet is oeted to itively formed mid-oit M of the outut voltge i terms of highest ossile symmetry, tive three-level PWM retifier system (f. Fig. 17(), [42], [55]), kow s VENNA Retifier, results. Futiolly equivlet ltertive imlemettios of the ridge-leg struture with lower lokig voltge stress of the ower diodes re deited i Figs. 17()-(d) [55]-[57]. As for the -swith retifier, the side voltge formtio of the system is gi deedet o the sig of the hse urrets. However, the retifier hse iut, e.g. ii, ow e lso oeted to the midoit M of the outut voltge esides the ositive d the egtive outut voltge us. Thus, three voltge levels re ville for the formtio of UM, whih justifies the desigtio of the system s three-level overter. A mjor dvtge of the three-level hrteristi is tht for the seletio of the lokig voltge ility of the ower trsistor oly hlf of the ek vlue of the lie-to-lie voltge d ot the totl vlue is relevt. Furthermore, s result of the higher umer of levels of U;M, the differee UN - UN remis limited to smll vlues. Thus smller mis urret fudmetl rile results [f. Fig. 16. Cotrol sheme of the -swith retifier with suerimosed outut voltge otroller Ku(s) d suordite iut urret otrollers Kr (s) with feed-forwrd of the mis hse voltges UiN. The retifier iut hse voltge referee vlues geerted y the hse urret otrollers re overted ito lie-to-lie voltge referee vlues y usig Y--trsformtio d the lied to the system y modultio of lwys oly two of the four-qudrt swithes S' Se' Se [f. Fig. 15(e)].

14 13 i ) C ---o.--.r- M M M..----o..----o ) ) d) Fig. 17. ) Ciruit toology of the origil VENNA Retifier [42]. )-d) Altertive ridge-leg strutures, wheres the ridge-leg vrit ) requires oly three trsistors ut shows higher odutio losses due to the seriesoeted diodes [55]; ) [56] is dvtgeous oerig rehrgig the outut itor t strt-u [55] (fter the rehrge itervl the thyristor is gted, thus rllel th with rehrgig resistor d series diode is yssed); d) [57] llows further redutio of the odutio losses omred to the toology i ). (2)], d/or the vlue of the iut (oost) idutes e redued. dditio, s result of the lower swithed voltge lso lower oduted EM oise level is geerted. logy to the.6.-swith retifier, U >.J2 UN,,rms (3 1) lies for the outut voltge rge of the system d <> = (-30, +30 ) (32) for the hse dislemet rge of the mis voltge d the mis urret fudmetl i se high outut voltge U > 2V2 UN,,rms d smll oost idute re ssumed. The hse dislemet rge is iresigly redued to ure ohmi mis ehvior (<> = 0) [53], [55] for lower outut voltge vlues, i.e. for V2 UN,,rms < U < 2V2 UN,,rms' Similr to the.6.-swith retifier i se of hse loss, lso the VENNA Retifier still e oerted t redued outut ower d t the sme outut voltge d with siusoidl iut urrets i the remiig hses [58]-[60]. The otrol struture of the system is show i Fig. 18() with suerimosed voltge otroller, defiig the referee vlue of the fudmetl frequey odute G* d/or the ower delivered to the outut, d suordite hse urret otrollers. Simle P tye otrollers e used if feed-forwrd of the mis voltges is lied. The lig of the two rtil outut voltges, whih is required due to the itegrtio of the itive mid-oit of the outut voltge ito the system futio, e imlemeted i similr mer s show for the Y-retifier (f. Se. -A), i.e. y ddig offset io of the hse urret referee vlues. The reso for this is tht the system, show i Figs. 18() d () for i > 0 d, i, ie < 0, hs redudt swithig sttes (100) d (011) regrdig the voltge formtio o the side. A ositive offset io > 0 leds to irese of the reltive o-time of ( 100) omred with (011) d egtive offset io < 0 to reltive derese omred with ( 100). Corresodigly, mily the lower or uer outut itor is hrged. The outut voltges of the system e loded symmetrilly, s ws show i the lysis i [61]. However, the dmissile degree of symmetry deeds o the mis voltge level. High degrees of symmetry re oly ossile for high outut voltges. im,,,, M ) (100) ",;; M im ",;; ) ) (0 11) Fig. 18. ) Bsi struture of the otrol of the VENNA Retifier with suerimosed otrol of the outut voltges U M, um d suordite hse urret otrol with feed-forwrd of the hse (mis) voltges. order to irese the outut voltge otrol rge, third hrmoi of the mis frequey is suerimosed to the mis voltge feed-forwrd sigl [25]. The lig of the two outut voltges is hieved y ddig offset i 0 to the hse urret referee vlues. ) d ) Redudt swithig sttes of the system (for i > 0, i, ie < 0) tht result i equl retifier iut lie-to-lie voltges d oosite sigs of im d therefore filitte lig of the outut itor voltges without ifluee o the hse urret shig. (E.g. for i 0 > 0, the reltive o-time of the swithig stte (100) is iresed d the o-time of the swithig stte (011) is redued resultig i im < 0; orresodigly io < 0 results i M < O. The swithig stte is rereseted y hse swithig futios Si, d/or (S,S,Se), where Si = 1 (i = {,, }) idites tht the orresodig four-qudrt swith is swithed-o d S i = 0 tht it is swithed-off.

15 14 ) ) Fig. 19. ) Hrdwre demostrtor of 10 kw VENNA Retifier. ) Mesured hse urret i (THDi = 1.6%) d orresodig mis hse voltge UN. Oertig rmeters: mis rms lie-to-lie voltge UN rms = 400 V, mis frequey N = 800 Hz, outut voltge U = 800 Y, swithig frequey = 250 khz. Sles: 200 V/div, 10 Aldiv, 0.5 ms/div. A stte-of-the-rt hrdwre demostrtor of the VENNA Retifier is show i Fig. 19. The swithig frequey of the system is i = 250 khz. Suh high swithig frequey, however, is oly useful if extremely low THDi of the iut urrets hs to e hieved t high mis frequeies (e.g. for More Eletri Airrft [53], in = 360 Hz Hz). No dvtge is give with regrd to ower desity omred to system with i = 72 khz for fored ir oolig (f. Fig. 35). 4) Hyrid Hlf-Cotrolled Ative Full-Cotrolled Six-Swith PFC ACDC Bridge Ciruit: f isted of the ovetiol sigle-hse PFC retifier struture ridgeless (or dul-oost) overter toology i Fig. U() is exteded to three-hses, hlf-otrolled hyrid hse-symmetril retifier iruits show i Fig. 20() results. This iruit toology does ot llow to imress siusoidl iut urret withi the etire mis eriod euse of the lk of ridgesymmetry. f, e.g. 60 itervl with UN > 0 d UN, UN < 0, i.e. gulr itervl ({in = (-30,30 ) of the mis eriod is osidered [f. Fig. 21()] d hse urrets with idetil sigs s the orresodig mis hse voltge re ssumed, oly the swithig-off of S would use ommuttio of i to D. the hses d, the ti-rllel diodes D d De would remi odutive, ideedet of the swithig stte of the trsistors S d Se. Therefore, siusoidl urret imressio is ossile oly for those 60 itervls i whih two mis hse voltges hve ositive sig, thus whe e.g. U, U > 0, U < 0, or i, i > 0, i < 0 lies [f. ({in = (30,90 ), Fig. 21(e)]. By swithig o S or S, or the e oeted to the egtive outut voltge us d i or i iresed. At the swith-off of SN or SN, the orresodig freewheelig diode D or D eomes odutig. Thus, ositive otetil is lied to or, d the orresodig hse urrets re redued. Therewith, either irese or derese of two hse urrets d osequetly siusoidl urret wveform is hievle. The third hse urret the lso shows siusoidl she s result of i + i + i = O. summry, siusoidl urret she e hieved oly i setios of the mis eriod. The futio of the iruit is hee essetilly limited to outut voltge regultio, wherey y usig the simle otrol roedure desried i [62], t lest lok-shed urret wveform, omrle to ssive retifiers, my e relized. t should e oted tht to simlify mtters, ll trsistors ould lso e swithed syhroously with duty yle ostt over the mis eriod d the system oerted i DCM. The iut urret she would the e idetil to tht i Fig. 12(d). As dvtge, lower odutio losses would our ut t the ost of higher imlemettio effort. Voltge regultio d siusoidl urret imressio requires extesio of the iruit i Fig. 20() to ridge symmetry, i.e. the dditio of three further trsistors ti rllel to the freewheelig diodes of the ositive ridge hlf. There the results the six-swith overter struture show i Fig. 20(), whih is emloyed e.g. for sulyig of the voltge d-lik of vrile seed drives. Sie for swithed o trsistor the urret i y se flows over this trsistor or its tirllel diode, the system llows, i eh hse, voltge formtio ideedet of the urret. At the iut of eh retifier ridge-leg, ositive or egtive voltge my e geerted referred to the virtul outut voltge mid-oit. Thus the ridge-legs exhiit two-level hrteristi d hee llow the imressio of siusoidl hse urrets of y hse dislemet reltive to the mis voltge. rtiulr, the urret my lso e led i tihse to the mis voltge, i.e. ower my e fed k ito the mis. This iverter oertig mode is e.g. emloyed i vrile seed mhie drives to feed rkig eergy k ito the mis, d reresets the mi eergy flow diretio for sulyig mhie from voltge d-lik. With regrd to the level of the outut voltge, U > v'2un,ll,rms (33) is required, the sme s for the systems i Fig. 15() d Fig. 17. Furthermore, the system del with mis hse filure, thus reresetig mis iterfe tht e used i extremely flexile mer. Hee the etire iruit struture is lso ommerilly ville s ower module (geerlly deomited s "six k" ower module) d is widely used i idustry. t should e emhsized tht the iruit hs reltively simle struture, desite the high futiolity, i.e. i rtiulr, the idiretiolity does ot result i irese i the umer of swithes omred with the uidiretiol strutures derived ove. This eomes eseilly ler o usig Reverse Codutig (RC)-GBTs, whih rt from the ower trsistor, lso ilude the ti rllel freewheelig diode i oe hi. The sme lies (i future) e.g. for SiC JFETs (i sode oetio). The iruit is thus of rtiulr iterest, desite the limittio mde here to uidiretiol systems s the wide hse gle rge my e exloited lso i the urely retifier mode, e.g. for retive ower omestio. S) Disussio: Aordig Se. V-A, the imlemettio of three-hse oosttye PFC retifier is ossile with urret ijetio oet sed o ssive diode retifitio or, ordig to Se. V-A2- Se. V-A4, y otrol of the odutio stte of diode ridge with tum-off ower semiodutors, whih llows diret imressio of siusoidl urrets. The diret urret imressio is referle omred with the imressio of two d urrets (i omitio with urret ijetio ito the third hse) for idustril system s swithig t the setor orders, otetilly uses distortios is ot required. dditio, tive retifier systems re ot limited to urely ohmi fudmetl mis ehvior, therewith e.g. the itive retive

16 15 D i J ) i J C : "," : "," J ) Fig. 20. ) Hlf-otrolled (hyrid) oost-tye three-hse -d ridge iruit. ) Full-otrolled tive three-hse -d ridge iruit (idiretiol six-swith tive PFC retifier). ower of the EM iut filter e (rtly) omested, or i geerl higher flexiility for the urret otrol is give. Thus, for the omrtive evlutio i Se. V-C, oly the swith retifier, the VENNA Retifier d the (idiretiol) sixswith oost-tye PFC retifier re osidered. The -swith retifier ould here e lso omitted with regrd to the system omlexity. Give y its struture, however, the system ot geerte shortiruit of the outut voltge i se of fulty otrol of the ower trsistors. Therewith, dvtge is give regrdig the oertiol sfety omred with the six-swith overter. The evlutio of the system furthermore is resole i terms of omleteess of the lysis. i - setor:: 2 ) i lur = i ) J ) i Wi lu Fig. 21. ) Time ehvior of the hse voltges withi mis eriod. ) Ative rt of the system for setor 1 (UN > 0, UN, UN < 0) with the ossiility of otrollig oly oe hse urret. ) Ative rt of the system for setor 2 (UN, UN > 0, UN < 0) with the ossiility of otrollig two hse urrets, i.e. ll hse urrets. B. Systems with Buk-Tye Chrteristi As sigle-hse uk-tye -d overters do ot ele to rovide siusoidl urrets over the etire mis eriod [21], the derivtio of uk-tye PFC retifier strutures hs to refer diretly to three-hse diode retifier iruits with d side idutor [f. Fig. 2()]. The diode ridge hs to e exteded with tum-off elemets y osiderig hse- d ridge-symmetry requiremets, suh tht the mis hses to e oeted with the d side e ritrrily seleted. Altertively, lso system sed o the ijetio riile ould e oetulized with referee to Se. V-A. 1) Ative Six-Swith Buk-Tye PFC Retifier: A ower trsistor hs to e dded i series to eh diode i the iruit show i Fig. 2() to ele full, i.e. voltge-ideedet otrollility of the ower trsfer. The resultt overter struture is show i Fig. 22(), whih is kow from urret d-lik overters used for drive systems [63]. The diode-trsistor seriesomitios rereset here uidiretiol, iolr lokig swithes, whih e lso reled y RC-GBTs i terms of redutio of the odutio losses. However, limittio of the swithig frequeies to reltively low vlues (i the rge of 10 khz) would the e required due to the reltively high swithig losses [64]. f trsistor of the ositive ridge hlf, e.g. trsistor S, d trsistor of the egtive ridge hlf, e.g. Se, re swithed o, the outut idutor urret is drw from hse d fed k ito hse, i = +1 i = 0 i = -1 (34) [f. Fig. 22()]. dditio, the lie-to-lie voltge U is swithed to the outut, i.e. is used for the formtio of the outut voltge U = UN - UN = U = U. (35) f solely oth trsistors of ridge-leg re swithed o, i = i = i = 0 lies d U = 0, i.e. the system is i freewheelig stte. The odutio losses i the freewheelig stte ould e redued y imlemettio of exliit freewheelig diode. By roer modultio, the outut urret i thus e distriuted to the three hses i suh mer tht fter low-ss filterig of the ulse-width modulted disotiuous iut urrets i, if), ie siusoidl mis urrets result (i Fig. 21() oly the filter itors CF of the EM filter o the mis side re show). Furthermore, the outut voltge, whih is formed y low-ss filterig of u with the outut idutor d the outut itor C, e djusted with the reltive durtio of the freewheelig stte strtig from zero to vlues U < UN,,rms. (36) The limited outut voltge rge is exlied y the ft tht two lie-to-lie voltges hve to e used i eh ulse eriod for the formtio of the outut voltge i order to suly eh mis hse with urret. order to mximize the hievle outut voltge, here lwys the two lrgest voltges, e.g. Ue d Uf) re seleted (vlid withi 60 itervl of the mis eriod i.n = (-30, +30 ), f. Fig. ls(». Both voltges hve hse dislemet of 60. Therefore, oly voltge vlues Ue = uf) = V372 UN,ll,rms re ville for the ulse eriod t the itersetio of oth voltges. Corresodigly, the outut voltge rge is defied y (36). The full otrollility of the system geerlly llows ritrry hse

17 16 ) N ) UN - i CF.. Fig. 22. ) Ciruit toology of the tive six-swith uk-tye PFC retifier. ) Equivlet iruit of rt of the system. Note: if ower trsistors were oly imlemeted i the ositive or egtive ridge hlf. iruit logous to Fig. 20() would result, whih lso would ot llow for siusoidl urret imressio due to the limited otrollility. dislemet etwee the mis urret d the mis voltge of i (37) However, with iresig hse dislemet <1>, the lie-to-lie voltges swithed to the outut hve lower istteous vlues, d/or U < UN,,rms os (<1» (38) lies. Corresodigly, e.g. for <> = 90 follows U = 0, s is immeditely ler osiderig the ower le etwee the d the d side. The outut voltge rge (36) is thus oly vlid for <> = 0 d/or i order to esure wide outut voltge rge, the hse dislemet <> hs to e limited to smll vlues [65]. Note: Aordig to (37), for the iruit i Fig. 22(), the reversl of the ower flow diretio demds hge of the outut voltge. A reversl of the ower flow diretio t the sme olrity of the outut is oly ossile y extesio of the iruit struture with ti-rllel trsistors to the diodes [66]. A suerimosed outut voltge otroller with uderlyig urret otroller is used for the system otrol (f. Fig. 23), whereuo ossily tive dmig of the iut filter hs to e lied [67]. t hs to e oited out tht oosed to oost-tye PFC retifiers the mis urret is ot diretly imressed y the otrol, ut is formed oly y ulse width modultio without feedk from otrolled d urret. Aordigly, vritios of the d urret, rsiti timig errors of the swithig or distortios t orders of the 60 mis voltge setors [68] re ot immeditely orreted. the rtil litio, rtiulrly t high mis frequeies, uk-tye PFC systems therefore show lower iut urret qulity th oost-tye PFC systems. First osidertios of diret mis urret otrol, whih ould elimite this disdvtge, e foud i [67]. A hrdwre demostrtor of the retifier system is reseted i Fig. 24 [69]. The effiiey of the system, imlemeted with 900 V suer-jutio MOSFETs d SiC Shottky diodes (f = 18 khz) equls to 98.9% t the omil oertig oit. This lerly shows, tht with rorite semiodutor effort, desite the imlemettio of the swithes s diode-trsistor series oetio, very high effiieies re hievle. 2) Ative Three-Swith Buk-Tye PFC Retifier: As ltertive to Fig. 22, the seletio of the odutig hses is lso ossile with four-qudrt swithes rrged o the side of the ridge retifier. The four-qudrt swithes the e itegrted ito the ridge-leg struture s show i Figs. 25()-(). The resultig three-swith uk-tye PFC retifier system is deited i Fig. 25(d). Due to the redutio of the umer of swithes d/or higher umer of diodes, higher odutio losses result. O the other hd, the istlled hi re of the ower trsistors is etter utilized. However, s result of the lower umer of swithes, the otrollility is limited omred with Fig. 22. There is ot y more ossiility give for reversl of the ower flow diretio, s e immeditely verified with Fig. 25(). Furthermore, oly the urret odutig ridge-legs ut ot diretly the urret odutig diodes re defile. The odutio stte thus djusts deedig o the olrity of the voltges t the tivted ridge-legs.!tin r;====;;=====+ Crrier sigl... Fig. 23. Struture of the otrol of the tive six-swith uk-tye PFC retifier with suerimosed outut voltge otroller K u(s). The outut urret otroller K (s) with feed-forwrd of the outut voltge U; defies the voltge t the outut of the retifier ridge. The modultio is erformed suh tht outut voltge of the retifier is formed i eh ulse eriod y segmets of two lie-to-lie voltges d the d urret i is distriuted to the iut hses d siusoidlly modulted.

18 ) ) i i, -"'" r-....."..... /*' -.. A l.(... / r'\. " "' V vi 1;1',./ ""'" ",, V i Fig. 24. ) Hrdwre demostrtor of 6 kw tive six-swith uk-tye PFC retifier. ) Time ehvior of the hse urrets withi mis eriod. Oertig rmeters: rms lie-to-lie voltge UN rms = 400 Y, mis frequey N = 50 Hz, d outut voltge U = 400 Y, swithig frequey J = 18 khz. The retifier eles extremely high omil effiiey of TJom = 98.9% [69] lthouth there re lwys four ower semiodutor i the urret th (two diode-mosfet series oetios). Sles: 5 Aldiv, 2 ms/div. A restritio of the oertig rge to (39) results, s is show y more detiled lysis, whih however is of mior imorte i view of the referred ohmi oertio s osequee of (38). A figurtive exltio of (39) is ossile i similr mer s for the oost-tye -swith retifier [f. Fig. 15()] with the ±30 hse dislemet etwee the hse qutities d the lie-to-lie qutities, however, is ot show here for the ske of revity. The outut voltge rge for <> = 0 is still give y Fig. 25. Derivtio of the iruit toology of the tive three-swith uktye PFC retifier. A four-qudrt swith is formed y diode ridge d d side ower trsistor is iserted o the side i ). After mergig series oeted diodes d redrwig, the ridge-leg struture i ) results, d/or the three-hse iruit toology i d). otext, it should e metioed tht with ssive ijetio etwork, urret ijetio ito ll three hses is ossile. Suh system ws roosed i [12] d is, s desried i Se. V-A, lso kow for oost-tye systems. However, i osidertio of the lrge volume of the ssive ijetio etwork d the higher ijetio urret, this roh is ot disussed further i this er. For the roof of the siusoidl otrollility of the mis urrets, d) U < jun,ll,rms. (40) The otrol sheme deited i Fig. 23 e lso lied to the three-swith system. The swithig sigls of the trsistors the hve to e geerted y OR-oetio of the swithig sigls of the ower trsistors of the resetive ridge-legs of the six-swith uk-tye PFC toology. 3) Hyrid Curret jetio Buk-Tye (SWSS) PFC Retifier: As ltertive to the diret otrol of the urret formtio of three-hse diode ridge, three-hse PFC retifier lso e imlemeted, ordig to the oet of 3 r d hrmoi urret ijetio desried i Se. V-A for oost-tye systems. The, oly the d-d oost overters of the iruit i Fig. 12 hve to e reled y uk overters. The resultt iruit is show i Fig. 26(). To the kowledge of the uthors, this system hs ot yet ee desried i the literture, resumly due to the geerl fous i reserh o systems with oost-tye hrteristi. the followig, the iruit toology is thus desigted s SWSS Retifier [4], [70]. Cotrry to the iruits ordig to Se. V-Bl d Se. V-B2, the retifier diodes of the system re ot ommutted with swithig frequey. Corresodigly, the odutio losses e redued y emloyig devies with low forwrd voltge dro (d higher reverse reovery time). As for the oost-tye system, the urret jetio is erformed gi with four-qudrt swithes ito the hse with the urretly smllest solute voltge vlue. this N ) l=l S if, C P X i P Sv S+ iy Z D+ Y C : D_ i s+ X i P Q.+i iy Q._i +- i s_ Z i i'" t 1= 1 Fig. 26. ) Bsi struture of the SWSS Retifier. ) ol verge equivlet iruit of the tive rt of the system for UN > UN > UN.

19 18 gi 60 itervl of the mis eriod with UN > UN > UN or CPN = (0, 60 ) is osidered. The tive rt of the iruit i this mis setor is deited i Fig. 26(). The retifier system should rereset symmetri three-hse lod of (fudmetl) hse odute G* to the mis. Aordigly, the lol verge vlues of the (disotiuous) iut urrets my e writte s 1, = G*UN 1,5 = G*UN 1, = G*UN (41) (UiN = UrN). The referee outut urret *, to e imressed y the uk overter, is the give uder the ssumtio of symmetril three-hse mis system y is relevt. After simlifitio, the outut voltge my e writte s A multilitio of (47) with results i uxz = OO+U - OO-U. (47) (48) the istteous ower, whih uder the ssumtio of symmetrilly loded mis shows ostt vlue = P. Aordigly, t ostt urret, lso ostt voltge uxz d thus due to U = 0 ostt outut voltge u = U is geerted. As the revious derivtio shows, the oertio of the system is limited to urely ohmi fudmetl mis ehvior, (49) [f. (41)]. The outut voltge rge is limited y the miiml vlue (42) of the six-ulse diode ridge outut voltge, (UN desigtes the mlitude of the hse voltges, U is the outut voltge). A idel outut urret otroller d/or 1, = = * is ssumed for the further osidertios. The urrets i the hses d re imressed y resetive swithig (PWM) of S+ d S_ wherey the duty yles result with (41), (42), d (43) s 2 U 00+1 = ---u 3 A 2 N UN 2 U 00+1 = - ---u 3 A 2 N. UN (43) (44) Cosiderig the rtitioig of the urret i the ode Y d i + i + i = 0 or 1, + 1,5 + 1, = 0, the ijetio urret (45) results. Thus, the orret urret is ijeted ito the third hse (here hse ). For the formtio of the outut voltge, uxz = OO+UN + ( 1-00+) UN - (oo-un + ( 1-00_ ) UN) (46) U < [UN,ll,rms, (50) d therewith idetil with the outut voltge rge for six-swith tive uk-tye PFC retifier systems. A ossile imlemettio of the otrol iruit of the system, with suerimosed outut voltge otroller K u ( s) d suordite outut urret otroller KJ ( s) is show i Fig. 27. Ultimtely, with the outut urret otroller the urret formig voltge uxz is defied, where dvtgeously feed-forwrd of the outut voltge u; = U is lied. The djustmet of Uxz is otied with rorite seletio of the duty yle of the ulse width modultio of the trsistors S+ d S_ [f. (43)]. There, the (ormlized) voltges UN d UN re used s modultio futios ordig to (44) (f. lso Fig. 27). The ulse width modultio of S+ d S_ e imlemeted i hse or tihse. The swithig frequey rile of iy is miimized for rrier sigls UD+ d UD- tht re i hse. For rrier sigls tht re i oosite hse, miiml outut urret rile ut.* Fig. 27. Cotrol struture of the SWSS Retifier with suerimosed outut voltge otroller Ku (s) d suordite outut urret otroller KJ (s) with feed-forwrd of the outut voltge. The voltge required to otrol the outut urret is formed through modultio of S + d S_ suh tht i oth odutig rhes of the diode ridge ulse width modulted urret results. The lol verge vlue of this urret is roortiol to the orresodig mis hse voltge. A four-qudrt swith is swithed o y the setor otrol d ijetig lwys ito the mis hse with the smllest solute voltge vlue.

20 19 i CF.. Fig. 28. Comitio of tive-filter-tye 3rd hrmoi urret ijetio retifier d d-d uk-tye overter stge to tive uk-tye PFC retifier system. The system is hrterized y miiml umer of ower semiodutors i the mi urret th, d oly low-frequey vritio ofthe outut CM voltge. The d-d uk overter should e dvtgeously imlemeted s iterleved overter. P : j'" C J A C : j, J ) mximum rile of iy results, whih eeds to e osidered for the desig of the filter itors CF t the iut. t should e oted tht hyrid 3 r d hrmoi ijetio PFC retifier iruit lso e uilt y omitio of tivefilter-tye 3 r d hrmoi ijetio retifier d simle d-d uk overter stge (f. Fig. 28). The uk stge to e otrolled e.g. for ostt outut urret or ostt outut voltge the esures, ideedet of the ulstio of the voltge U with sixfold mis frequey, ostt outut ower. The dvtge of this iruit toology is tht oly sigle ower trsistor is lyig i the mi urret th, i.e. i rtiulr t high outut voltges with reltively short freewheelig itervl, low odutio losses our. dditio, the egtive outut voltge termil is lwys oeted to the mis vi diode of the lower ridge hlf of the diode retifier. Therefore, o outut CM voltge with swithig frequey is geerted. The imlemettio effort of the CM EM filter thus e redued. Oly the rsiti itors of the ower semiodutors led to high-frequey CM oise urrets (f. relted osidertio of oosttye PFC retifier systems i [53]). 4) Disussio: The imressio of the mis urret of the osidered uk-tye PFC retifier systems is otied with so fr kow urret otrol shemes lwys oly i idiret mer. Aordigly, otrry to the oost-tye PFC retifiers (f.se. V-AS), oets sed o the urret ijetio riile d diret tive systems e osidered s equivlet regrdig the hievle iut urret qulity. Therefore, for the omrtive evlutio i Se. V-C, oth oets, i.e. the six-swith uk-tye PFC retifier d the SWSS Retifier, re osidered. The three-swith uk-tye PFC retifier is omitted due to the higher odutio losses d the less uiform distriutio of the semiodutor losses omred to the six-swith uk-tye PFC retifier. C. Systems with Boost-Tye d Buk-Tye Chrteristi As show i Fig. 4, the outut voltge rge of oost-tye PFC retifiers is ot immeditely djoiig the outut voltge rge of uk-tye systems. Voltges i the rge UN,,rmS < U < h UN,,rms (5 1) thus oly e geerted with dowstrem d-d oost overter of the uk-tye PFC retifier or y omitio of oost-tye PFC retifier d d-d uk overter. A ossile imlemettio of suh d-d overter system is show i Fig. 29. The idiretiol, i.e. for oost d uk oertio desiged overter hs outut ower of 10 kw, llows voltge Fig. 29. ) Ciruit toology of (idiretiol) 6 kw Trigulr Curret Mode (TCM) Zero Voltge Swithig (ZVS) uk d-d overter omrisig three iterleved stges. ) Ultr-effiiet d ultr-omt hrdwre demostrtor with omil effiiey of 'f/ = 99% d ower desity of = 18.5kW/dm 3. Seifitios: omil iut voltge U = 350 V, outut voltge rge U A = 0 V V, rted outut ower P2 = 10 kw, swithig frequey of eh stge t rted outut ower f = 48 khz. trsfer from U1 = 350 V to U2 = 0 V V, d omrises three iterleved susystems. The disotiuous urret mode oertio of the susystems with resot swithig trsitio d/or zero voltge swithig [71] miimizes swithig losses d llows the seletio of high swithig frequey (t omil oertio) of f = 48 khz. Therewith, very high effiiey of T} = 99% d ower desity of = 18.5 kw/dm 3 is hievle. As ltertive to exliit imlemettio of d-d overter, d-d oost overter stge ould lso e itegrted ito the outut stge of uk-tye PFC system, wherey the outut idutor ould lso e used s oost idutor [72], [73]. V. DMENSONNG OF THE POWER SEMCONDUCTORS AND OF THE EM FTER the followig, the urret d voltge stresses of the systems i Se. V-AS d Se. V-B4 re riefly summrized to ssist rtil imlemettio of the iruit toologies desried ove. dditio, the si struture of the EM filter o the side is disussed with fous o the CM filterig. A. Dimesioig of the Power Semiodutors d Mi Pssive Comoets The urret stresses of the ower semiodutors of PFC retifier systems re ofte determied for defied oertig oit y simultio. Altertively, lultio e lso erformed oly lytilly with good ury. Simle mthemtil exressios the result, whih re vlid over the whole oertig rge (uder the ostrit of CCM) d thus rovide idel sis for the lysis of the omoet stresses d/or the losses t differet oertig oits or iut d/or outut voltges. The strtig oit for the lytil lultios re the reltive swith-o times of the ower trsistors whih e determied lytilly for the whole mis eriod if the modultio method is kow. The remiig rmeter is the modultio idex M, whih

21 20 voltges of iterest e determied [74] y vergig over the mis eriod. The resultt equtios for the idividul toologies re omiled i Fig. 30. reresets the rtio of the mlitude of the three-hse voltge or urret system o the side d the d outut voltge, d/or the d outut urret M = iu (52) f B. DM d em EMf Filter The iut idutors of the oost-tye PFC retifier systems, disussed i Se. V-A, re to e osidered s the first stge of multi -stge EM filter led o the side similr to the iut filter itors of the systems with uk-tye hrteristi. The oduted EM oise is suressed with this filter suh tht the stdrds of oduted oise re fulfilled i the frequey rge of 1 50 khz MHz (e.g. CSPR 1 1 ). (Deedig o the litio, other EM filter might e required o the d side [75], [76], whih however is ot disussed here for the ske of revity.) Three-hse retifier iruits iheretly geerte CM voltge etwee the mid-oit of the outut voltge (the outut voltge uses) (Uu UN reresets the mlitude of the fudmetl of the disotiuous hse voltge t the retifier iut of oost-tye system, iu is the mlitude of the fudmetl of the disotiuous hse urrets t the retifier iut of uk-tye system). With the reltive swith-o time (duty yle) d the iut urret (for oost-tye retifiers), d/or the outut urret (for uk-tye retifiers), the istteous odutio sttes of the ower semi odutors re defied, d the lol verge urret vlues e lulted y vergig over ulse eriod. Bsed o tht, the glol verge d root me squre (rms) vlues of the urrets d _ ; 4rr - /3 (3 + 'A ) - 1\ 241T S.r"", A.. 2 )3 i d). l A - 4V3 ) ( 2; 10. A (5 + 2/3) i... D. r m = ) /3 1M l A/ B; + "6, V..." j3;;; 1 '" e [ 0.,..,. = ",, = i ).. [D, rms = \ e = i 15/0...,." = J ) = 2. + /3 (3 + 4Ai) 247f D. r m S / D...,." = 10,.., & - i 6 + /3rrAl - " 1211" i D.l"'" i i,,. Vfill /" S,3\'g = s. r lll =. J.. A lo... ( ;;: - "'4 ). {""2M V 4' - 3;- \ _----l,-- To... g =... " i 34-:: ( m D m i ;.J \ {J,..." i. /0."" :: f) i. - + i / ; e S/D.lwg = 1/\. 2 - /3 2 ;; "'" '----+-_--- T,/o ",," i, j - (J '... <>-- Fig. 30. Ciruit toologies d urret stresses of the mi omoets of the ower iruit of seleted tive oost- d uk-tye PFC retifier systems. ) Six-swith oost-tye PFC retifier [f. Fig. 20()], ) -swith retifier (f. Fig. 16), ) VENNA Retifier (f. Fig. S), d) six-swith uk-tye PFC retifier (f. Fig. 21), e) S W S S Retifier (f. Fig. 25), d 0 tive-filter-tye 3 r d hrmoi urret ijetio retifier (f. Fig. 13).

22 21 d groud. The CM voltge wveform for ssive diode retifier iruit with idutors o the d side is deited i Fig. 31(). For tive retifier iruits, the CM voltge hs ulsed wveform [f. Figs. 31() d ()] thus, CM urrets result due to the rsiti ites to groud. For fully tive oost-tye PFC systems, e.g. for the VENNA Retifier, the CM voltge origites from the retifier side hse voltges emloyed for the urret imressio tht do ot dd to zero (exet for the swithig stte SM = S5M = SM = 1). Thus, s for the Y-retifier, show i Se. -A, CM voltge 1 UMN = - "3 (UM + U5M + UM) = UCM, (53) is geerted etwee the mid-oit of the outut voltge d the (grouded) mis str-oit, whih ould oti low-frequey omoet UCM, ut otis i y se swithig frequey omoet UCM, UCM = UCM + UCM, (54) (f. for the VENNA Retifier lso [53], Fig. 3.4 d Fig 5.73). A filterig of UCM, e hieved y oetig M vi itor CCM,M to rtifiil mis str-oit N' (reresetig the groud otetil), formed y str-oetio of filter itors CF d isertio of CM idutor CM,l i series to the oost idutors [f. Fig. 3Z()]. A low-frequey vritio of the otetil of M is thus ot reveted. dditio, otrry to lemet of CM filter itors to groud, groud urrets re miimized. Additiol CM filter stges hve to e imlemeted o the mis side for the filterig of the oise urrets tht result from the rsiti ites of the ower semiodutors to the het sik [53]. For fully tive uk-tye PFC systems, withi eh ulse eriod two lie-to-lie voltges re swithed to the retifier outut for the formtio of the outut voltge d for the distriutio of the outut urret to the mis hses. This gi leds to CM voltge UCM, t swithig frequey. (A CM voltge durig the freewheelig itervl e void y symmetril slittig of the outut idutor to the ositive d egtive outut us). The oet desried ove for oost-tye overters dvtgeously lso e used for the filterig of UCM, of uk-tye systems [f. Fig. 3Z()] where the CM idute hs to e iserted o the d side. For determiig the swithig frequey omoet of the OM voltge, whih is relevt for the desig of the OM filterig, for oost-tye systems withi eh ulse eriod, the formtio of the iut urret hs to e osidered. E.g. for hse di = Tt UN - ( UM + UCM ) = UN - UN = UN - UN - UN, (55) (56) lies. The hse urret osists of fudmetl d swithig frequey omoet where the fudmetl omoet z is formed ordig to dz _ = Tt UN - UN d the voltge to e suressed y the OM filterig is di dt = UN, = UDM,. (57) (58) (59) The filterig of UDM, (eh hse shows equl setrl omositio of the relted OM voltge) is erformed with the oost idutors d with side itors CDM,l etwee the hses, wherey tyilly two filter stges re required [f. Fig. 3Z()]. Additiolly, ) t (ms) 400,-----,----,,----,-----,, G 0 u ;:, -200 ) 400 r: N _+----_+----_ ) t (ms) Fig. 31. CM voltge t the outut of three-hse retifier systems refereed to the grouded str-oit of the mis. ) Pssive diode retifier with smoothig idutor o the d side [f. Fig. 2()]. ) VENNA Retifier [f. Fig. 18()]. ) Six-swith uk-tye PFC retifier [f. Fig. 22()]. dmig elemets for reduig the resoe eks [77] i reset of the otrol stility of the system hve to e dded, whih lso revet the exittio of the filter y hrmois of the mis voltge. For uk-tye systems, the OM oise is geerted y the ulstig iut urrets t swithig frequey d is tteuted y the iut filter itors CF d the side filter idutors DM,l d dditiol iut filter stge. Regrdig the volume of the EM filter, it hs to e oted tht, e.g. for oost overter systems, ostt voltge is deomosed ito its setrl omoets y the ulse width modultio, i.e. ito mis-frequey fudmetl omoet d hrmoi omoets groued roud multiles of the swithig frequey with sideds. Oly the fudmetl frequey is used for the imressio of the hse urret, i.e. the swithig frequey hrmois must e suressed with rorite EM (iut) filter. The hrmoi omoets, i.e. ultimtely the differee etwee the ostt outut voltge U d the tul low-frequey voltge omoet to e formed, e.g. UN, show similr rms vlues. Cosiderig i dditio tht the EM iut filter hs to odut the iut urret of the overter, sigifit frtio of the totl overter volume is exeted to e determied y the EM iut filter. This is ofirmed y imlemeted systems, where the volume of the EM filter (iludig the oost idutors or uk iut filter itors) tyilly reresets 30% to 50% of the totl overter volume (f. Fig. ZO). Here, it should e oited out tht the required filter ttetio e lulted lytilly i simle mer y determiig the setrl deomositio of the retifier iut voltge ito fudmetl d totl oise voltge [78]-[80]. V. COMPARATVE EVAUATON the foregoig setios, oost- d uk-tye PFC retifier systems suitle for idustril litio hve ee idetified d riefly disussed. the followig, omrtive evlutio of seleted iruit oets with regrd to effiiey, volume, d

23 22 Rm.1,d D1.ld CJM.2 fcc'1.2 RD.\1.ld Dfo,l. ON ZN o.1.2 C):'1.1 W i CCl. CCM,M r o.1.l P CCM, N :z: en 'Z. l" C o..1 1 Fig. 32. Exmle of the EM! filter struture of ) tive oost-tye PFC retifier system [VENNA Retifier, f. Fig. 18()] d of ) tive six-swith uk-tye PFC retifier [f. Fig. 21]. Commeril EM! iut filters tyilly emloy filter itors t the iut (mis) side. Aordigly, dditiol filter stge is formed y the ier mis imede ZN, whih ould e deliertely iresed to limit the short-iruit urret. Fuses, over-voltge rotetio devies, leedig resistors, d rehrgig iruitry re ot show. (Remrk: Otiolly, the CM itors ould lso e omied with the DM itor stges, i.e. y ddig Y-itor etwee the str-oit of the DM itors d groud.) imlemettio effort, d therewith filly imlemettio osts is rovided to highlight the dvtges d disdvtges of the idividul systems d to filitte the seletio of iruit toology for seifi litio. The erforme idies used for the evlutio (f. Se. V-A) re lulted usig the sme seifitios for eh system: Rted outut ower Po = 10 kw; ie-to-lie mis voltge UN,1,rms = 400 V; Outut voltge Uo = 700 V (oost-tye systems), Uo = 400 V (uk-tye systems); Power trsistors: 1200 V SiC JFETs (fieo/siced, i sode ofigurtio, i.e. with ormlly-off hrteristi); Power diodes: 1200 V SiC Shottky diodes (fieo, ThiQ2, ommuttio/freewheelig diodes), 1200 V Si EmCo4 diodes (fieo, retifier diodes of the SWSS Retifier); Swithig frequey: f = 48 khz; Therml oditios: verge jutio temerture of the semiodutors TJ,vg = 125 C, het sik temerture T's = 85 C, miet temerture la = 45 ; DC outut itors: lumium eletrolyti itors (B43501-series, EPCOS), 400 V itors for oost-tye systems (two i series), 500 V itors for uk-tye systems, desiged for me time-to-filure of 50'000 h regrdig the rms urret lodig d ssumed mximum itor temerture of 65 C; AC filter itors (uk-tye systems): foil itors (MKP, 305 V, X2, B3277x-series, EPCOS). The rted outut ower of 10 kw reresets tyil vlue for three-hse ower sulies. The ower trsistors re imlemeted with SiC JFETs. This llows the use of the sme trsistor tehology for ll systems uder ivestigtio s the oost-tye PFC retifier systems feture two- or three-level hrteristi, whih requires miimum lokig ility of 700 V or 350 V. Furthermore, i omitio with SiC Shottky freewheelig diodes, reltively high swithig frequey of f = 48 khz is eled whih reresets resole omromise for oth overter tyes. (For the sixswith oost-tye PFC retifier systems the iterl ody diodes of the JFETs re used isted of exliit freewheelig diodes.) Altertively, the three-level overter (VENNA Retifier) ould lso e imlemeted with Si suer-jutio MOSFETs d the two-level overter with 1200 V GBTs, whih however would oly llow mximum swithig frequey of f R:j 20 khz. dditio, the SiC JFETs e lso lied for the uk-tye retifier systems, whih hve similr lokig voltge requiremet for the ower semiodutors s the two-level oost-tye systems. Oly for the SWSS Retifier, the diode retifier t the iut is imlemeted with low o-stte voltge dro Si diodes isted of SiC Shottky diodes i order to hieve high effiiey. The hi re of the semiodutors is desiged sed o therml model of tyil semiodutor kge (EooPACK, fieo, [79]) d het sik temerture of 1'8 = 85 C suh tht verge jutio temerture of TJ,vg = 125 C results. For determiig the semiodutor losses, the odutio hrteristis (o resiste or diode forwrd hrteristi) d the swithig losses re osidered with referee to dt sheet vlues d results of exerimetl mesuremets o ommeril omoets [79]. Thus, equl usge of ll semiodutors is esured. dditio, the semiodutor desig esures tht the mlitude of the jutio temerture rile (with mis frequey) remis limited to vlues tht gurtee me time-to-filure of 50'000 h osiderig tyil yles-to-filure rtes [81] tht is equivlet to the dimesioig of the eletrolyti itors. t is worth otig tht the reltively high equl jutio temerture of ll ower semiodutors leds to reltively high semiodutor odutio losses due to the seleted uiolr devies. order to hieve higher effiiey, semiodutor devies with higher urret rtig, i.e. lrger hi re, ould e used, d lower jutio temerture ould e seleted. A. Defiitio of the Performe dies order to rovide uiverslly vlid qutifitio of the overter erformes, ormlized erforme idies re emloyed, whih re ideedet of the tul system dimesioig. Therey, the outut ower Po d the lod urret 10 re used s referee vlues.

24 23 With referee to [8], the fititious totl ret ower d the ormlized odutio d swithig ower loss re used for the hrteriztio of the semiodutor exediture. 1) To tl Trsistor d Diode VA Rtig: Totl Trsistor VA Rtig - 1 US,mx, is,mx, J1s = (60) omoet of hse urret my the e writte s (show e.g. for iut hse ) UDM,,,rms = JUN,rms - UN,rms = UDM,,rms. (69) The Commo Mode (CM) voltge is give y 1 UCM = - "3 (UM + U5M + UM) (70) Totl Diode VA Rtig - 1 UD,mx, id,mx, J1D = (61 ) (US,mx, d UD,mx, refer to the mximum lokig voltge stress without osiderig swithig overvoltges, is,mx, d id,mx, to the ek urret vlue of the -th devie; J1s d J1D were defied i [8] for the ssessmet of the trsistor d diode utiliztio.) 2) Reltive To tl Codutio osses: Reltive Totl Trsistor Codutio osses s,rms, TC = ='-'---=-----'- 10 Reltive Totl Diode Codutio osses D = D,rms, 10 (f. (4), where M desigtes the (fititious) mid-oit of the outut voltge. Alogous to (69), the CM oise voltge relevt for the filter desig the e roximtely lulted y sutrtig the low frequey omoet itcm 2-2 UCM,rv,rms - V UCM, rms - UCM, rms. (7 1) For the uk-tye PFC system the CM voltge e lulted s 1 UCM = "2 (UN + UN), (72) d the swithig frequey omoet gi ordig to (71). (62) sted of UDM, [f. (59)], here, the rms vlue of the swithig frequey omoets of the disotiuous iut urrets (63) As metioed ove, for the trsistors (SiC JFETs) d diodes, the semiodutor hi re is sled with the urret lodig d/or the ower loss suh tht ostt (verge) jutio temerture of ll ower semiodutors is give. Corresodigly, the odutio losses of the trsistors oly irese lierly d ot qudrtilly with the urret lodig. 3) Reltive To tl Trsistor d Diode Swithig osses: T = D = PS,, Po PD,, Po (64) (65) The swithig losses re lulted sed o exerimetlly verified swithig loss mesuremet dt [79] d re roximted lierly s futio of the swithed voltge d the swithed urret for jutio temerture of TJ = 125 C. 4) Reltive Boxed Vo lume of the dutors d Citors: Regrdig the ssive omoets for the oost-tye retifier systems oly the oxed volume of the oost idutors (iro ower ores) d the outut itors (eletrolyti itors) d for the uk-tye retifier systems oly the oxed volume of the outut idutors (sme ore mteril s used for oost idutors) d of the side filter itors CF = CDM,l (MKP X2 foil itors) re osidered. dutors Citors - 1 i V,i P = ----;- - 1 i VC,i P = ----;- (66) (67) 5) Coduted Differetil d Commo Mode Noise: The ssessmet of the oduted EM oise ehvior d/or of the required filter effort to meet the EMC stdrds is erformed for the oost-tye systems sed o the Differetil Mode (OM) omoet UDM d the Commo Mode (CM) omoet UCM of the oise voltge t the retifier iut Uoise = UDM,"'.. + UCM,rv. (68) Therey, i terms of simlifitio [78], for the OM oise voltge UDM the totl voltge, formig the oost idutor urret rile. - V '2 2 'ldm,,l"'..,rms - 2,rms - 2,rms. (73) (show for iut hse ) is used for the ssessmet of the OM filter tteutio requiremet. A voltge oise level ould e lulted y multilitio with R = 50, the iut resiste of tyil EM test reeiver. 6) Effi iey: The effiiey of the systems is hrterized y the reltive losses P PN - Po T} ----'-'-::::---=- = = -- -T}, (74) Po T} T} where i dditio to the semiodutor losses d mi ower omoets lso ower osumtio of Pux = 30 W for the uxiliry suly (otrol iruitry, gte drives, fs) is osidered. 7) Vo lume of the Coolig System: With the reltive losses ( 1 - T}) d the Coolig System Performe dex [82] CSP = Gth,S-A (75) Vs (Gth,S-A desigtes the required therml odute (W/ K) etwee the surfe of the het sik d the miet) d give dmissile temerture differee!::"t's-a the volume of the fored ir ooled het sik e lulted to [83] V< Gth,s- _ P S - CSP -!::"Ts-CSP Commeril het sik rofiles hve tyil C S P W/(K dm 3 ), with otimized het sik rofiles CSP W/(K dm 3 ) is hievle. B. Comriso of the Six-Swith Boost Retifier, the!::"-swith Retifier, d the VENNA Retifier Fig. 33, erforme omriso of the six-swith oost PFC retifier, the!::"-swith retifier, d the VENNA Retifier is show sed o the erforme idiies defied i Se. V-A. The reresettio is hose suh tht for high erforme oly smll re is overed. All systems require similr totl hi re, show roximtely equl reltive losses, roximtely the sme OM d CM oduted EM oise levels, d llow for otiuous oertio i se of mis hse loss. The mi dvtge of the three-level hrteristi of the VENNA Retifier is the sigifitly lower volume of the

25 24 - Six-Swith Boost Tye Retifier - - D.-Swith lis' (-) Retifier - V [ENNA Reti fier AhiP (mm') Six-Swith Buk-Tye Retifier -' s" - SWSS Retifier (-) Ahi (mm') " (-) '\ (-) T, (-) 0, ( - ) " O]l--Jd;:::"1r llj- 10] ( -) (-) T O] 'Oli.:: E'-.t-...t--+---:iE= P----!"---- oj (- ) (-) P" (m]/kw) P" (mj/kw) [)O [00 UCM (dbj.lv) 1-1/ (%) P" (m]/kw) 1-1/ (%) Fig. 33. Comrtive evlutio of two ltertive tive oost-tye PFC retifier systems, i.e. the six-swith retifier ordig to Fig. 20() d the VENNA Retifier ordig to Fig. 17(). The hrteristi of the -swith retifier is show y dshed lie. oost idutors omred with the two-level toologies. Oly smll differee etwee the idividul systems is give regrdig the volume of the outut itor s the two- d three-level overters hve similr rms vlues of the itor urrets d i y se series oetio of two eletrolyti itors is required euse of the outut voltge of U = 700 V. The eter t for the VENNA Retifier thus is iheretly ville. summry, the six-swith overter is hrterized y very simle struture of the ower iruit d the VENNA Retifier y reltively smll overll volume or high ower desity. dditio, for the VENNA Retifier (s well s for the -swith retifier) short iruit of the d-us through fulty otrol of ower trsistor is ot ossile d for oth toologies, ower trsistors with reltively slow rsiti ti-rllel ody diodes e used. The use of the -swith retifier, whih is reltively omlex with regrd to the iruit struture d modultio, e oly justified whe three-level toology does ot rovide sigifit dvtges due to low mis voltge or if uidiretiol toology is required tht revets eergy feedk ito the mis y its hrdwre struture d ot oly y otrol. Power sulies i irrft ould serve s exmle here. C. Comriso of the Ative Six-Swith Buk-Tye P FC Retifier d the SWSS Retifier Fig. 34, ovetiol six-swith uk-tye PFC retifier ordig to Fig. 22() d SWSS Retifier ordig to Fig. 26 re omred. Both systems show, with reset to the totl hi re requiremets, the volume of ssive omoets, the effiiey, d the oduted EM oise, oly very little differees. A irese i effiiey of the six-swith struture would e esily ossile y usig exliit freewheelig diode ross the d lik. For the SWSS Retifier, redutio of the umer of ower semiodutors e hieved through modifitio of the iruit toology ordig to Fig. 28. dditio, the mis ommutted ijetio swithes ould e imlemeted with RC-GBTs with low forwrd voltge dro s ltertive to the SiC JFETs. Fig. 34. Comrtive evlutio of two ltertive uk-tye PFC retifier systems, i.e. of the tive six-swith retifier ordig to Fig. 22(e) d the hyrid SWSS Retifier ordig to Fig. 26. summry, the mi dvtge of the SWSS Retifier is ot see i higher erforme ut i d-d overter like iruit struture. Aordigly, si kowledge of the futio of ssive diode retifier of the iut stge of the system is suffiiet to imlemet three-hse PFC retifier with siusoidl iut urret d otrolled outut voltge. rtiulr, o se vetor sed modultio sheme, whih is frequetly lied to three-hse overters d tyilly leds to diffiulties whe delig the first time with threehse systems, hs to e imlemeted. V. CONCUSONS As show i this er, three-hse PFC retifier futiolity e imlemeted esides hse-modulr roh with 1) diret otrol of the odutio stte of three-hse retifier through itegrted ower trsistors or rllel otrol rhes with tive ower semiodutors, i.e. s tive retifier or 2) y shig the outut urrets of three-hse diode retifier o the d side d feedk/ijetio of the urret differee lwys i tht hse whih would ot odut urret for ovetiol ssive diode retifitio, i.e. s hyrid retifier with 3 rd hrmoi urret ijetio. Followig these si oets, diret three-hse retifier iruits with oost- or uk-tye hrteristi re relizle. These iruits dvtgeously hve ridge toology (t the iut) with ridge-legs of idetil struture d thus feture overll ridge symmetry. For oth iruit tegories, over the lst two dedes, vriety of iruit toologies hve ee roosed. However, i the oiio of the uthors, from the tegory of the oost-tye retifier systems, oly the ovetiol (idiretiol) six-swith overter d the VENNA Retifier d from the systems with uk-tye hrteristi oly gi the six-swith struture d the SWSS Retifier, roosed i this er, re of iterest for idustril litio. Comred to these four toologies, other iruit oets show (sigifitly) higher omlexity of the ower d/or the otrol iruit, or hve high omoet stresses t lower omlexity d limited oertig

26 25 rge with regrd to outut voltge rge d/or urret-to-voltge hse dislemet gle t the iut. This is of rtiulr imorte whe oertig t uled mis systems or i se of filure of mis hse. The seleted iruit toologies ele very high effiieies s result of the exellet odutio d swithig hrteristis of moder Si d SiC ower semiodutors. Soft-swithig oets re thus ot eessry d would lso ot e eted y idustry due to the irese i omlexity resultig from the uxiliry iruit rhes with dditiol losses d due to the tyilly omlex stte sequee withi swithig eriod. geerl, i idustry oly iruit toologies re rtile tht re well uderstood ot oly y the ivetors ut lso y suffiietly lrge umer of egieers. terms of system omlexity, it should e oted tht the restritio to uidiretiol ower flow does ot llow redutio e.g. hlvig of the umer of tive semiodutors or simler otrol sheme. The reso is tht ultimtely lso uidiretiol strutures hve to odut hse urrets of oth diretios d to geerte voltges with oth olrities. Oly for three-level overters, ler dvtge of uidiretiol overters (VENNA Retifier) is give omred with idiretiol overters; for the uidiretiol system six trsistors (with ti-rllel diodes) d six diodes re required, wheres the imlemettio of toologilly similr idiretiol T-tye three-level overter system [84] requires twelve trsistors (with ti-rllel diodes). The mi three-hse PWM retifier iruit toologies, exet the SWSS Retifier, hve ee lredy theoretilly ivestigted d exerimetlly verified i the literture. Therefore, for further demi reserh, mily the followig reltively rrow tois remi: Diret mis (iut) urret otrol of uk-tye PFC retifier iruits. [For these systems tyilly oly the outut voltge d the outut urret is diretly otrolled d/or the mis urret is ot exliitly iluded i feedk loo; thus, rtiulrly for high mis frequeies (800 Hz), urret distortios our t the itersetios of the lie-to-lie voltges.] Prllel oertio of higher umer (more th two) overter systems. (High outut ower levels re ofte imlemeted y rllel oetio of multile low-ower modules where irultig urrets ould our i etwee the systems.) Stility of distriuted overter systems. (The ostt ower hrteristi of PFC retifiers results i egtive differetil iut imede, whih led to istility i omitio with the EM iut filter or the ier mis imede d/or with other overters [85].) dditio to these tois, eseilly the multi-ojetive otimiztio of overter systems reresets wide d iterestig field of reserh. Whe develoig idustril systems, esides defied effiiey d ower desity, mily ost trget hs to e met, d erti lifetime hs to e gurteed, i.e. multile erforme idies hve to e simulteously osidered. t is therefore essetil to uderstd the mutul deedee of the erforme idies i the ourse of the desig, e.g. the trde-off etwee ower desity (kw /dm 3 ) d effiiey TJ (%). The hievle erforme limit (Preto-Frot), i.e. whe ll degrees of freedom re otimlly used, e determied sed o mthemtil model of the system ehvior d the desig roess with multi-ojetive otimiztio (f. [30], Fig. 26). The ifluee of idividul desig rmeters, e.g. the swithig frequey, the e immeditely idetified d/or the eessry rmeters for trget erforme e diretly lulted. Fig. 35 shows, s exmle, the TJ--Preto-Frot sed o dt of hrdwre demostrtors of the VENNA Retifier with differet swithig frequeies ;,z VR-72 ]\ VR Without Cooler 95 VR'5500 Wter Cooled J VR- OOO 6 Fored Air Cooled P (kw/dm3) 5()() \ 1\ 1000 \000 Fig )--Preto-Frot sed o hrdwre demostrtors of 10 kw VENNA Retifier systems (the rmeter is the swithig frequey). The est omromise etwee the effiiey d the volume determiig tehologies ws idetified durig the desig roess for eh system. A swithig frequey of if ::; 250 khz is reommeded for idustril imlemettio sed o the urret stte-of-the-rt s it leds to reltively high ower desity ( = 6.4 kw/dm 3 ) d still high omil effiiey (7)om = 96.7%), d gurtees high iut urret qulity lso for high mis frequeies s e.g. i More Eletri Airrft (MEA) litios [f. Fig. 20()]. Strtig from if = 73 khz, irese i the swithig frequey leds, due to the irese of the swithig losses d therewith irese i the het sik volume, to redutio of the ower desity, whih ot e omested y the ossile redutio of the EM filter. A higher swithig frequey, e.g. if = 250 khz is therefore oly sesile, if low distortio of the iut urret THDi must e gurteed t high mis frequeies s e.g. for MEA litios with in = Hz. The TJ--Preto-Frot, esides for the seifitio of the desig rmeters, e lso dvtgeously used for omriso of ltertive iruit oets, e.g. i the ourse of idustril develomet roess. Eh iruit toology is the hrterized y the ssoited erforme limit d thus the differee i erforme d the suitility of oet to meet the trget erforme is immeditely visile. However, i order to oti omlete iture, lso the reltio etwee TJ d d the reltive osts 0" (kw/$), i.e. lso the TJ-O"d -O"-Preto-Frots should e osidered. Furthermore, the imt of ew tehologies, e.g. the relemet of Si y SiC/GN ower semiodutors o the system erforme ould e lyzed usig the Preto-Frot. The resultig shift of the erforme limits the diretly shows the ossiility of imrovig seleted oet d the resultig osts e immeditely determied (f. [30], Fig. 26). Suh lysis so fr oly hs ee erformed oly for sigle-hse systems [8], d is therefore see s fous of future demi reserh i the field of three-hse PWM retifier systems d s key toi i ower eletrois i geerl. ACKNOWEDGMENT The uthors would like to thk Dr. Mihel Hrtm for rovidig figures d dt of the VENNA Retifier d the,0,.-swith retifier from his Ph.D. thesis [53] d Dr. Joh Miioek for rovidig dt of the VR-73 VENNA Retifier d the idiretiol TCM ZVS d-d overter hrdwre demostrtor. REFERENCES [l] P. Wlther, "A ew retifier system high effiiet, high dese, modulr, quik to istll d suerior for servie," i Pro. 15th t. Te leom. Eergy Coi NTEEC '93, vol. 2, Se , 1993, [2] A. Pietkiewviz d D. Tollik, "Cost/erforme osidertios for 1- hse iut urret shers," i Pro. 16th t. Te leom. Eergy Co! NTEEC '94, Ar , 1994,

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28 27 27th EEE Power Eletrois Seilists Co! PESC '96, vol. 2, Ju , 1996, [45] D. J. Perreult d J. G. Ksski, "Desig d evlutio of ellulr retifier system with distriuted otrol," i Pro. PESC 98 Reord Power Eletrois Seilists Co! 29th Aul EEE, vol., My 17-22, 1998, [46] P. Bros, F. Cles, J.-. Creier, d F. C. ee, "terleved threehse oost retifiers oerted i the disotiuous odutio mode: lysis, desig osidertios d exerimettio," EEE Trs. Power Eletro., vol. 16, o. 5, , [47] J. C. Slmo, "Comrtive evlutio of iruit toologies for -hse d 3-hse oost retifiers oerted with low urret distortio," i Pro. Cdi Coi Eletril d Comuter Egieerig, Se , 1994, [48] R. Nik, M. Rstogi, d N. Moh, "Third-hrmoi modulted ower eletrois iterfe with 3-hse utility to rovide regulted d outut d to miimize lie-urret hrmois," i Pro. EEE Aul dustry Alitios Soiety Aul Meetig la S '92, 1992, [49] J. C. Slmo, "Oertig three-hse diode retifier with low-iut urret distortio usig series-oeted dul oost overter," EEE Tr s. 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