TDA X 45W QUAD BRIDGE CAR RADIO AMPLIFIER PLUS HSD. 1 Features SUPERIOR OUTPUT POWER CAPABILITY: 2 Description. Figure 1.
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1 4 X 45 QUAD BRIDGE CAR RADIO AMPLIFIER PLUS HSD 1 Features SUPERIOR OUTPUT POER CAPABILITY: 4 x /4Ω MAX. 4 x 45/4Ω EIAJ 4 x 14.4V, 1KHz, % 4 x /2Ω MAX. 4 x 77/2Ω EIAJ 4 x 14.4V, 1KHz, % MULTIPOER BCD TECHNOLOGY MOSFET OUTPUT POER STAGE EXCELLENT 2Ω DRIVING CAPABILITY HI-FI CLASS DISTORTION LO OUTPUT NOISE ST-BY FUNCTION MUTE FUNCTION AUTOMUTE AT MIN. SUPPLY VOLTAGE DETECTION LO EXTERNAL COMPONENT COUNT: INTERNALLY FIXED GAIN (26dB) NO EXTERNAL COMPENSATION NO BOOTSTRAP CAPACITORS ON BOARD 0.35A HIGH SIDE DRIVER 1.1 Protections: OUTPUT SHORT CIRCUIT TO GND, TO V S, ACROSS THE LOAD VERY INDUCTIVE LOADS OVERRATING CHIP TEMPERATURE ITH SOFT THERMAL LIMITER Figure 2. Block Diagram Figure 1. Package Table 1. Order Codes Part Number TDA75 FLEXIATT25 Package FLEXIATT25 OUTPUT DC OFFSET DETECTION LOAD DUMP VOLTAGE FORTUITOUS OPEN GND REVERSED BATTERY ESD 2 Description The TDA75 is a breakthrough BCD (Bipolar / CMOS / DMOS) technology class AB Audio Power Amplifier in Flexiwatt 25 package designed for high power car radio. The fully complementary P- Channel/N-Channel output structure allows a rail to rail output voltage swing which, combined with high output current and minimised saturation losses sets new power references in the car-radio field, with unparalleled distortion performances. Vcc1 Vcc2 4µF 0nF ST-BY MUTE HSD HSD/V OFF DET OUT1+ IN1 OUT1- P-GND OUT2+ IN2 OUT2- P-GND OUT3+ IN3 OUT3- P-GND OUT4+ IN4 OUT4- P-GND AC-GND SVR TAB S-GND 0.47µF 47µF D94AU158C February 05 Rev. 2 1/11
2 Figure 3. Pin Connection (Top view) 1 25 TAB P-GND2 ST-BY OUT2+ P-GND1 OUT1+ SVR IN1 IN2 S-GND IN4 IN3 AC-GND OUT3+ P-GND3 VCC OUT4+ MUTE OUT2- VCC OUT1- OUT3- OUT4- P-GND4 HSD D94AU159A Table 2. Absolute Maximum Ratings Symbol Parameter Value Unit V CC Operating Supply Voltage 18 V V CC (DC) DC Supply Voltage 28 V V CC (pk) Peak Supply Voltage (for t = ms) V I O Output Peak Current Repetitive (Duty Cycle % at f = Hz) Non repetitive (t = 0µs) 9 A A P tot Power Dissipation Tcase = C T j Junction Temperature 1 C T stg Storage Temperature -55 to 1 C THERMAL DATA Symbol Parameter Value Unit R th j-case Thermal Resistance Junction to case Max. 1 C/ 2/11
3 Table 3. Electrical Characteristcs (Refer to the test and application diagram, V S = 13.2V; R L = 4Ω; R g = 0Ω; f = 1KHz; T amb = 25 C; unless otherwise specified). Symbol Parameter Test Condition Min. Typ. Max. Unit I q1 Quiescent Current R L = ma V OS Output Offset Voltage Play Mode ± mv dv OS During mute ON/OFF output ± mv offset voltage G v Voltage Gain db dg v Channel Gain Unbalance ±1 db P o Output Power V S = 13.2V; THD = % V S = 13.2V; THD = 1% V S = 14.4V; THD = % V S = 14.4V; THD = 1% V S = 13.2V; THD = %, 2Ω V S = 13.2V; THD = 1%, 2Ω V S = 14.4V; THD = %, 2Ω V S = 14.4V; THD = 1%, 2Ω P o EIAJ EIAJ Output Power (*) V S = 13.7V; R L = 4Ω V S = 13.7V; R L = 2Ω P o max. Max. Output Power (*) V S = 14.4V; R L = 4Ω V S = 14.4V; R L = 2Ω THD Distortion P o = 4 P o = 15; R L = 2Ω e No Output Noise "A" eighted Bw = Hz to KHz SVR Supply Voltage Rejection f = 0Hz; V r = 1Vrms db f ch High Cut-Off Frequency P O = KHz R i Input Impedance 0 1 KΩ C T Cross Talk f = 1KHz P O = 4 f = KHz P O = 4 35 I SB St-By Current Consumption V St-B y = 1.5V µa I pin5 St-by pin Current V St-By = 1.5V to 3.5V ± µa V SB out St-By Out Threshold Voltage (Amp: ON) 3.5 V V SB in St-By in Threshold Voltage (Amp: OFF) 1.5 V A M Mute Attenuation P Oref = 4 90 db V M out Mute Out Threshold Voltage (Amp: Play) 3.5 V V M in Mute In Threshold Voltage (Amp: Mute) 1.5 V V AM in VS Automute Threshold (Amp: Mute) Att db; P Oref = 4 (Amp: Play) V Att < 0.1dB; P O = V I pin23 Muting Pin Current V MUTE = 1.5V µa (Sourced Current) V MUTE = 3.5V µa HSD SECTION V dropout Dropout Voltage I O = 0.35A; V S = 9 to 16V V I prot Current Limits 0 0 ma % % µv µv db db 3/11
4 Table 3. Electrical Characteristcs (continued) (Refer to the test and application diagram, V S = 13.2V; R L = 4Ω; R g = 0Ω; f = 1KHz; T amb = 25 C; unless otherwise specified). Symbol Parameter Test Condition Min. Typ. Max. Unit OFFSET DETECTOR (Pin 26) V M_ON Mute Voltage for DC offset V stby = 5V 8 V V M_OFF detection enabled 6 V V OFF Detected Differential Output Offset V stby = 5V; V mute = 8V ±2 ±3 ±4 V V 25_T Pin 25 Voltage for Detection = TRUE V 25_F Pin 25 Voltage for Detection = FALSE (*) Saturated square wave output. Figure 4. Standard Test and Application Circuit V stby = 5V; V mute = 8V V OFF > ±4V V stby = 5V; V mute = 8V V OFF > ±2V V 12 V C8 C7 20µF Vcc1-2 Vcc3-4 ST-BY MUTE IN1 R1 K R2 47K C1 C9 1µF C 1µF OUT1 OUT2 IN C2 18 OUT3 IN C3 21 IN OUT4 C4 S-GND C5 0.47µF SVR C6 47µF HSD TAB D95AU335B 4/11
5 Figure 5. P.C.B. and component layout of the Figure 4. Components & Top Copper Layer Bottom Copper Layer 5/11
6 Figure 6. Quiescent current vs. supply voltage. Id (ma) 2 Figure 9. Distortion vs. output Power THD (%) 2 Vi = 0 RL = 4 Ohm 1 Vs= 14.4 V RL = 4 Ohm f = KHz f = 1 KHz Vs (V) Po () Figure 7. Output power vs. supply voltage. Po () 75 Po-max 65 RL= 4 Ohm 55 f= 1 KHz THD= % THD= 1 % Vs (V) Figure. Distortion vs. output power THD (%) 1 Vs= 14.4 V RL = 2 Ohm f = KHz f = 1 KHz Po () Figure 8. Output power vs. supply voltage. Po () 1 1 Po-max RL= 2 Ohm f= 1 KHz THD= % THD= 1 % Vs (V) Figure 11. Distortion vs. frequency THD (%) Vs = 14.4 V RL = 4 Ohm Po = f (Hz) 6/11
7 Figure 12. Distortion vs. frequency. Figure 15. Output attenuation vs. supply volt. THD (%) OUT ATTN (db) 1 Vs = 14.4 V RL = 2 Ohm Po = RL = 4 Ohm Po= 4 ref f (Hz) Vs (V) Figure 13. Crosstalk vs. frequency. CROSSTALK (db) 90 RL = 4 Ohm Po = 4 Rg = 0 Ohm f (Hz) Figure 16. Output noise vs. source resistance En (uv) Vs= 14.4 V RL= 4 Ohm KHz lin. "A" wgtd Rg (Ohm) Figure 14. Supply voltage rejection vs. freq. SVR (db) 0 90 Rg= 0 Ohm Vripple= 1 Vrms f (Hz) Figure 17. Power dissipation & efficiency vs. output power (sine-wave operation) Ptot () 90 n (%) 90 n Vs= 13.2 V RL= 4 x 4 Ohm f= 1 KHz SINE Ptot Po () 7/11
8 Figure 18. Power dissipation vs. ouput power (Music/Speech Simulation) Ptot () Vs= 13.2 V RL= 4 x 4 Ohm GAUSSIAN NOISE CLIP START Po () Figure 19. Power dissipation vs. output power (Music/Speech Simulation) Ptot () 55 Vs= 13.2 V RL= 4 x 2 Ohm GAUSSIAN NOISE 45 CLIP START Po () 3 DC Offset Detector The TDA75 The TDA75 integrates a DC offset detector to avoid that an anomalous DC offset on the inputs of the amplifier may be multiplied by the gain and result in a dangerous large offset on the outputs which may lead to speakers damage for overheating. The feature is enabled by the MUTE pin and works with the amplifier umuted and with no signal on the inputs. The DC offset detection is signaled out on the HSD pin. 4 Application Hints (ref. to the circuit of fig. 4) 4.1 SVR Besides its contribution to the ripple rejection, the SVR capacitor governs the turn ON/OFF time sequence and, consequently, plays an essential role in the pop optimization during ON/OFF transients.to conveniently serve both needs, ITS MINIMUM RECOMMENDED VALUE IS µf. 4.2 INPUT STAGE The TDA75's inputs are ground-compatible and can stand very high input signals (± 8Vpk) without any performances degradation. If the standard value for the input capacitors () is adopted, the low frequency cut-off will amount to 16 Hz. 4.3 STAND-BY AND MUTING STAND-BY and MUTING facilities are both CMOS-COMPATIBLE. In absence of true CMOS ports or microprocessors, a direct connection to Vs of these two pins is admissible but a 4 kohm equivalent resistance should present between the power supply and the muting and stand-by pins. R-C cells have always to be used in order to smooth down the transitions for preventing any audible transient noises. About the stand-by, the time constant to be assigned in order to obtain a virtually pop-free transition has to be slower than 2.5V/ms. 4.4 HEATSINK DEFINITION Under normal usage (4 Ohm speakers) the heatsink's thermal requirements have to be deduced from fig. 18, which reports the simulated power dissipation when real music/speech programmes are played out. Noise with gaussian-distributed amplitude was employed for this simulation. Based on that, frequent clipping occurence (worst-case) will cause Pdiss = 26. Assuming T amb = C and T CHIP = 1 C as boundary conditions, the heatsink's thermal resistance should be approximately 2 C/. This would avoid any thermal shutdown occurence even after long-term and full-volume operation. 8/11
9 5 Package Information Figure. Flexiwatt25 (vertical) Mechanical Data & Package Dimensions DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A B C D E F (1) G G H (2) H H H L (2) L L2 (2) L L L M M N O R R R R R V 5 (T p.) V1 3 (Typ.) V2 (Typ.) V3 45 (Typ.) (1): dam-bar protusion not included (2): molding protusion included OUTLINE AND MECHANICAL DATA Flexiwatt25 (vertical) V C B V3 H3 H H1 H2 V A O R3 L2 L3 L4 N R4 V2 R R2 L L1 V1 V1 R2 R1 D Pin 1 G G1 F FLEX25ME L5 R1 R1 E M M /11
10 6 Revision History Table 4. Revision History Date Revision Description of Changes December 01 1 First Issue February 05 2 Improved value from 75 to µa of the ST_BY Current Consumption parameter in the table 3 at the page 3. /11
11 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners 05 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 11/11
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