HCF4002B DUAL 4-INPUT NOR GATE

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DUAL 4-INPUT NOR GATE PROPAGATION DELAY TIME : t PD = 50ns (TYP.) at DD = 10 C L = 50pF BUFFERED INPUTS AND OUTPUTS STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS QUIESCENT CURRENT SPECIFIED UP TO 20 5, 10 AND 15 PARAMETRIC RATINGS INPUT LEAKAGE CURRENT I I = 100nA (MAX) AT DD = 18 T A = 25 C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B " STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEICES" DESCRIPTION The HCF4002B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology available in DIP and SOP packages. The HCF4002B DUAL 4-INPUT NOR GATE provides the system designer with direct DIP ORDER CODES SOP PACKAGE TUBE T & R DIP HCF4002BEY SOP HCF4002BM1 HCF4002M013TR implementation of the NOR function and supplement the existing family of CMOS gates. All inputs and outputs are buffered. PIN CONNECTION September 2001 1/7

INPUT EQUIALENT CIRCUIT PIN DESCRIPTION PIN No SYMBOL NAME AND FUNCTION 2, 3, 4, 5, 9, 10, 11, 12 A, B, C, D, E, F, G, H Data Inputs 6, 8 NC Not Connected 1, 13 J, K Data Outputs 7 SS Negative Supply oltage 14 DD Positive Supply oltage TRUTH TABLE INPUTS OUTPUTS A, E B, F C, G D, H J, K LOGIC DIAGRAM L L L L H H X X X L X H X X L X X H X L X X X H L X = Don t care ABSOLUTE MAXIMUM RATINGS Symbol Parameter alue Unit DD Supply oltage -0.5 to +22 I DC Input oltage -0.5 to DD + 0.5 I I DC Input Current ± 10 ma P D Power Dissipation per Package 200 mw Power Dissipation per Output Transistor 100 mw T op Operating Temperature -55 to +125 C T stg Storage Temperature -65 to +150 C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. All voltage values are referred to SS pin voltage. RECOMMENDED OPERATING CONDITIONS Symbol Parameter alue Unit DD Supply oltage 3 to 20 I Input oltage 0 to DD T op Operating Temperature -55 to 125 C 2/7

DC SPECIFICATIONS Test Condition alue Symbol Parameter I () O () I O (µa) DD () T A = 25 C -40 to 85 C -55 to 125 C Min. Typ. Max. Min. Max. Min. Max. Unit I L Quiescent Current 0/5 5 0.01 0.25 7.5 7.5 0/10 10 0.01 0.5 15 15 0/15 15 0.01 1 30 30 0/20 20 0.02 5 150 150 OH High Level Output 0/5 <1 5 4.95 4.95 4.95 oltage 0/10 <1 10 9.95 9.95 9.95 0/15 <1 15 14.95 14.95 14.95 OL IH IL I OH I OL Low Level Output oltage High Level Input oltage Low Level Input oltage Output Drive Current Output Sink Current 5/0 <1 5 0.05 0.05 0.05 10/0 <1 10 0.05 0.05 0.05 15/0 <1 15 0.05 0.05 0.05 0.5/4.5 <1 5 3.5 3.5 3.5 1/9 <1 10 7 7 7 1.5/13.5 <1 15 11 11 11 4.5/0.5 <1 5 1.5 1.5 1.5 9/1 <1 10 3 3 3 13.5/1.5 <1 15 4 4 4 0/5 2.5 <1 5-1.36-3.2-1.15-1.1 0/5 4.6 <1 5-0.44-1 -0.36-0.36 0/10 9.5 <1 10-1.1-2.6-0.9-0.9 0/15 13.5 <1 15-3.0-6.8-2.4-2.4 0/5 0.4 <1 5 0.44 1 0.36 0.36 0/10 0.5 <1 10 1.1 2.6 0.9 0.9 0/15 1.5 <1 15 3.0 6.8 2.4 2.4 I I Input Leakage 0/18 Any Input 18 Current ±10-5 ±0.1 ±1 ±1 µa C I Input Capacitance Any Input 5 7.5 pf The Noise Margin for both "1" and "0" level is: 1 min. with DD =5, 2 min. with DD =10, 2.5 min. with DD =15 DYNAMIC ELECTRICAL CHARACTERISTICS (T amb = 25 C, C L = 50pF, R L = 200KΩ, t r = t f = 20 ns) µa ma ma Symbol Parameter Test Condition alue (*) Unit DD () Min. Typ. Max. t TLH t THL Output Transition Time 5 125 250 10 60 120 15 45 90 t PLH t PHL Propagation Delay Time 5 100 200 10 50 100 15 40 80 (*) Typical temperature coefficent for all DD value is 0.3 %/ C. ns ns 3/7

TEST CIRCUIT C L = 50pF or equivalent (includes jig and probe capacitance) R L = 200KΩ R T = Z OUT of pulse generator (typically 50Ω) WAEFORM : PROPAGATION DELAY TIMES (f=1mhz; 50% duty cycle) 4/7

Plastic DIP-14 MECHANICAL DATA DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. a1 0.51 0.020 B 1.39 1.65 0.055 0.065 b 0.5 0.020 b1 0.25 0.010 D 20 0.787 E 8.5 0.335 e 2.54 0.100 e3 15.24 0.600 F 7.1 0.280 I 5.1 0.201 L 3.3 0.130 Z 1.27 2.54 0.050 0.100 P001A 5/7

SO-14 MECHANICAL DATA DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. A 1.75 0.068 a1 0.1 0.2 0.003 0.007 a2 1.65 0.064 b 0.35 0.46 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.5 0.019 c1 45 (typ.) D 8.55 8.75 0.336 0.344 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 7.62 0.300 F 3.8 4.0 0.149 0.157 G 4.6 5.3 0.181 0.208 L 0.5 1.27 0.019 0.050 M 0.68 0.026 S 8 (max.) PO13G 6/7

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 2001 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom http://www.st.com 7/7