Silicon Epitaxial Planar Diode for Various Detector, Modulator, Demodulator

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Silicon Epitaxial Planar Diode for Various Detector, Modulator, Demodulator REJ03G0556-0500 Rev.5.00 Jul 19, 2006 Features Low capacitance. (C = 4.0 pf max) Short reverse recovery time. (t rr = 4.0 ns max) High reliability with glass seal. Ordering Information Type No. Cathode band Mark Package Name Package Code 1N4148 Black H48 DO-35 GRZZ0002ZB-A Pin Arrangement H 1 48 2 Cathode band 1. Cathode 2. Anode Rev.5.00 Jul 19, 2006 page 1 of 4

Absolute Maximum Ratings (Ta = 25 C) Item Symbol Value Unit Peak reverse voltage V RM 100 V Reverse voltage V R 75 V Average rectified current I O 150 ma Peak forward current I FM 450 ma Non-Repetitive peak forward surge current I FSM * 1 A Power dissipation Pd 500 mw Junction temperature Tj 200 C Storage temperature Tstg 65 to +200 C Note: Within 1s forward surge current. Electrical Characteristics Item Symbol Min Typ Max Unit Test Condition Forward voltage V F 1.0 V I F = 10 ma Reverse current I R 25 na V R = 20 V Capacitance C 4.0 pf V R = 0 V, f = 1 MHz Reverse recovery time t rr * 1 4.0 ns I F = 10 ma, V R = 6 V, Irr = 1 ma, R L = 100 Ω Note: 1. Reverse recovery time test circuit (Ta = 25 C) Ro = 50 Ω DC Supply Pulse Generator 0.1 µf 3 kω Sampling Oscilloscope Rin = 50 Ω Trigger Rev.5.00 Jul 19, 2006 page 2 of 4

Main Characteristic 10 1 10 4 10 5 Ta = 125 C Forward current I F (A) 10 2 10 3 Ta = 75 C Ta = 125 C Ta = 25 C Ta = -25 C Reverse current I R (A) 10 6 10 7 Ta = 75 C Ta = 25 C 10 8 10 4 0 0.2 0.4 0.6 0.8 1.0 1.2 Forward voltage V F (V) Fig.1 Forward current vs. Forward voltage 10 9 0 20 40 60 80 100 Reverse voltage V R (V) Fig.2 Reverse current vs. Reverse voltage f = 1MHz 10 Capacitance C (pf) 1.0 10 1 1.0 10 10 2 Reverse voltage V R (V) Fig.3 Capacitance vs. Reverse voltage Rev.5.00 Jul 19, 2006 page 3 of 4

Package Dimensions Package Name DO-35 JEITA Package Code RENESAS Code Previous Code MASS[Typ.] SC-40 GRZZ0002ZB-A DO-35 / DO-35V 0.13g L E L φb φd Reference Dimension in Millimeters Symbol Min Nom Max φb - 0.5 - φd - 2.0 - E - - 4.2 L 26.0 - - Rev.5.00 Jul 19, 2006 page 4 of 4

Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. 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