CD54/74HC125, CD54/74HCT125

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CD54/74HC125, CD54/74HCT125 Data sheet acquired from Harris Semiconductor SCHS143A November 1997 - Revised May 2000 High Speed CMOS Logic Quad Buffer, Three-State [ /Title (CD74 HC125, CD74 HCT12 5) /Subject High peed MOS ogic uad uffer, hreetate) Features Three-State Outputs Separate Output Enable Inputs Fanout (Over Temperature Range) - Standard Outputs............... 10 LS - Bus Driver Outputs............. 15 LS Wide Operating Temperature Range... -55 o C to 125 o C Balanced Propagation Delay and Transition Times Significant Power Reduction Compared to LSTTL Logic ICs HC Types - 2V to 6V Operation - High Noise Immunity: N IL = 30%, N IH = 30% of at = 5V HCT Types - 4.5V to 5.5V Operation - Direct LSTTL Input Logic Compatibility, = 0.8V (Max), V IH = 2V (Min) - CMOS Input Compatibility, I l 1µA at V OL, V OH Description The HC125 and HCT125 contain 4 independent three-state buffers, each having its own output enable input, which when HIGH puts the output in the high impedance state. Ordering Information PART NUMBER TEMP. RANGE ( o C) PACKAGE CD54HC125F -55 to 125 14 Ld CERDIP CD54HC125F3A -55 to 125 14 Ld CERDIP CD74HC125E -55 to 125 14 Ld PDIP CD74HC125M -55 to 125 14 Ld SOIC CD54HCT125F3A -55 to 125 14 Ld CERDIP CD74HCT125E -55 to 125 14 Ld PDIP CD74HCT125M -55 to 125 14 Ld SOIC NOTES: 1. When ordering, use the entire part number. Add the suffix 96 to obtain the variant in the tape and reel. 2. Wafer and die for this part number is available which meets all electrical specifications. Please contact your local TI sales office or customer service for ordering information. Pinout CD54HC125, CD54HCT125 (CERDIP) CD74HC125, CD74HCT125 (PDIP, SOIC) TOP VIEW 1OE 1 14 1A 2 13 4OE 1Y 3 12 4A 2OE 4 11 4Y 2A 5 10 3OE 2Y 6 9 3A 7 8 3Y CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures. Copyright 2000, Texas Instruments Incorporated 1

Functional Diagram 1OE 1 1A 2 3 1Y 2OE 2A 3OE 3A 4OE 4A 4 5 10 9 13 12 6 8 2Y 3Y 11 4Y = 7 = 14 TRUTH TABLE INPUTS S na noe ny H L H L L L X H Z NOTE: H = High Level L = Low Level X = Don t Care Z = High Impedance, OFF State Logic Diagram na P n ny noe 2

Absolute Maximum Ratings DC Supply,........................ -0.5V to 7V DC Input Diode, I IK For V I < -0.5V or V I > + 0.5V......................±20mA DC Output Diode, I OK For V O < -0.5V or V O > + 0.5V....................±20mA DC Drain, per Output, I O For -0.5V < V O < + 0.5V.......................... ±35mA DC Output Source or Sink per Output Pin, I O For V O > -0.5V or V O < + 0.5V....................±25mA DC or Ground, I CC.........................±70mA Thermal Information Thermal Resistance (Typical, Note 3) θ JA ( o C/W) PDIP Package............................. 90 SOIC Package............................. 175 Maximum Junction Temperature....................... 150 o C Maximum Storage Temperature Range..........-65 o C to 150 o C Maximum Lead Temperature (Soldering 10s)............. 300 o C (SOIC - Lead Tips Only) Operating Conditions Temperature Range (T A )..................... -55 o C to 125 o C Supply Range, HC Types.....................................2V to 6V HCT Types.................................4.5V to 5.5V DC Input or Output, V I, V O................. 0V to Input Rise and Fall Time 2V...................................... 1000ns (Max) 4.5V...................................... 500ns (Max) 6V....................................... 400ns (Max) CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 3. θ JA is measured with the component mounted on an evaluation PC board in free air. DC Electrical Specifications TEST CONDITIONS 25 o C -40 o C TO 85 o C -55 o C TO 125 o C PARAMETER SYMBOL V I (V) I O (ma) (V) MIN TYP MAX MIN MAX MIN MAX UNITS HC TYPES High Level Input V IH - - 2 1.5 - - 1.5-1.5 - V 4.5 3.15 - - 3.15-3.15 - V 6 4.2 - - 4.2-4.2 - V Low Level Input - - 2 - - 0.5-0.5-0.5 V 4.5 - - 1.35-1.35-1.35 V V OH V OL 6 - - 1.8-1.8-1.8 V V IH or -0.02 2 1.9 - - 1.9-1.9 - V -0.02 4.5 4.4 - - 4.4-4.4 - V -0.02 6 5.9 - - 5.9-5.9 - V -6 4.5 3.98 - - 3.84-3.7 - V -7.8 6 5.48 - - 5.34-5.2 - V V IH or 0.02 2 - - 0.1-0.1-0.1 V 0.02 4.5 - - 0.1-0.1-0.1 V 0.02 6 - - 0.1-0.1-0.1 V 6 4.5 - - 0.26-0.33-0.4 V 7.8 6 - - 0.26-0.33-0.4 V Input Leakage I I or - 6 - - ±0.1 - ±1 - ±1 µa 3

DC Electrical Specifications (Continued) TEST CONDITIONS 25 o C -40 o C TO 85 o C -55 o C TO 125 o C PARAMETER SYMBOL V I (V) I O (ma) (V) MIN TYP MAX MIN MAX MIN MAX UNITS Quiescent Device I CC or 0 6 - - 8-80 - 160 µa Three-State Leakage HCT TYPES I OZ or - 6 - - ±0.5 - ±5 - ±10 µa V IH High Level Input Low Level Input V IH - - 4.5 to 5.5 - - 4.5 to 5.5 2 - - 2-2 - V - - 0.8-0.8-0.8 V V OH V OL V IH or -0.02 4.5 4.4 - - 4.4-4.4 - V -6 4.5 3.98 - - 3.84-3.7 - V V IH or 0.02 4.5 - - 0.1-0.1-0.1 V 6 4.5 - - 0.26-0.33-0.4 V Input Leakage I I to 0 5.5 - - ±0.1 - ±1 - ±1 µa Quiescent Device I CC or 0 5.5 - - 8-80 - 160 µa Additional Quiescent Device Per Input Pin: 1 Unit Load (Note 4) I CC -2.1-4.5 to 5.5-100 360-450 - 490 µa Three-State Leakage I OZ or - 5.5 - - ±0.5 - ±5 - ±10 µa V IH NOTE: 4. For dual-supply systems theoretical worst case (V I = 2.4V, = 5.5V) specification is 1.8mA. HCT Input Loading Table INPUT UNIT LOADS na, noe 1 NOTE: Unit Load is I CC limit specified in DC Electrical Specifications table, e.g., 360µA max at 25 o C. 4

Switching Specifications Input t r, t f = PARAMETER SYMBOL TEST CONDITIONS (V) 25 o C -40 o C TO 85 o C -55 o C TO 125 o C TYP MAX MAX MAX UNITS HC TYPES Propagation Delay Time na to ny t PLH, t PHL C L = 50pF 2-100 125 150 ns 4.5-20 25 30 ns C L = 15pF 5 8 - - - ns CL = 50pF 6-17 21 26 ns Enable Delay Time t PZL, t PZH C L = 50pF 2-125 155 190 ns 4.5-25 31 38 ns CL = 50pF 6-21 26 32 ns Disable Delay Time t PLZ, t PHZ CL = 50pF 2-125 155 190 ns C L = 50pF 4.5-25 31 38 ns CL = 50pF 6-21 26 32 ns Output Transition Time t TLH, t THL C L = 50pF 2-60 75 90 ns 4.5-12 15 18 ns 6-10 13 15 ns Input C I - - - 10 10 10 pf Three-State Output Power Dissipation (Notes 5, 6) HCT TYPES Propagation Delay Time na to ny C O - - - 20 20 20 pf C PD - 5 29 - - - pf t PLH, t PHL C L = 50pF 4.5-25 31 38 ns Output Enable Time t PZL, t PZH C L = 50pF 4.5-25 31 38 ns Output Disabling Time t PLZ, t PHZ C L = 50pF 4.5-28 35 42 ns C L = 15pF 5 11 - - - ns Output Transition Times t TLH, t THL C L = 50pF 4.5-12 15 18 ns Input C I - - - 10 10 10 pf Three-State Output Power Dissipation (Notes 5, 6) C O - - - 20 20 20 pf C PD - 5 34 - - - pf NOTES: 5. C PD is used to determine the dynamic power consumption, per channel. 6. P D = V 2 CC f i (C PD + C L ) where f i = Input Frequency, f O = Output Frequency, C L = Output Load, = Supply. 5

Test Circuits and Waveforms CD54/74HC125, CD54/74HCT125 t r = t f = t r = t f = INPUT INPUT 2.7V 0.3V 3V t THL t TLH t THL t TLH INVERTING t PHL t PLH INVERTING t PHL t PLH FIGURE 1. HC TRANSITION TIMES AND PROPAGATION DELAY TIMES, COMBINATION LOGIC FIGURE 2. HCT TRANSITION TIMES AND PROPAGATION DELAY TIMES, COMBINATION LOGIC DISABLE t r DISABLE t f 2.7 1.3 0.3 3V tplz t PZL t PLZ t PZL LOW LOW HIGH t PHZ t PZH HIGH t PHZ t PZH S S DISABLED S S S DISABLED S FIGURE 3. HC THREE-STATE PROPAGATION DELAY WAVEFORM FIGURE 4. HCT THREE-STATE PROPAGATION DELAY WAVEFORM OTHER INPUTS TIED HIGH OR LOW DISABLE IC WITH THREE- STATE R L = 1kΩ C L 50pF FOR t PLZ AND t PZL FOR t PHZ AND t PZH NOTE: Open drain waveforms t PLZ and t PZL are the same as those for three-state shown on the left. The test circuit is Output R L =1kΩ to, C L = 50pF. FIGURE 5. HC AND HCT THREE-STATE PROPAGATION DELAY TEST CIRCUIT 6

IMPORTANT NOTICE Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgment, including those pertaining to warranty, patent infringement, and limitation of liability. TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with TI s standard warranty. Testing and other quality control techniques are utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. Customers are responsible for their applications using TI components. In order to minimize risks associated with the customer s applications, adequate design and operating safeguards must be provided by the customer to minimize inherent or procedural hazards. TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right of TI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. TI s publication of information regarding any third party s products or services does not constitute TI s approval, warranty or endorsement thereof. Copyright 2000, Texas Instruments Incorporated