Surface Mount TRANSZORB Transient Voltage Suppressors

Similar documents
P6KE6.8A thru P6KE540A. TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor. FEATURES PRIMARY CHARACTERISTICS

1.5KE6.8A thru 1.5KE540A, 1N6267A thru 1N6303A. TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor.

Surface Mount TRANSZORB Transient Voltage Suppressors

High Performance Schottky Rectifier, 3.0 A

Small Signal Fast Switching Diode

High Performance Schottky Rectifier, 1.0 A

High Performance Schottky Rectifier, 1 A

Schottky Rectifier, 1.0 A

Dual Common-Cathode Ultrafast Plastic Rectifier

Small Signal Fast Switching Diode FEATURES PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS

Schottky Rectifier, 1.0 A

Surface Mount Schottky Barrier

SMCJ5V0(C)A - SMCJ170(C)A 1500 Watt Transient Voltage Suppressors

Standard Recovery Diodes, Generation 2 DO-5 (Stud Version), 95 A

High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW

Schottky Rectifier, 100 A

Surface Mount Multilayer Ceramic Chip Capacitor Solutions for High Voltage Applications

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

Schottky Rectifier, 1 A

Silicon PIN Photodiode

1 Form A Solid State Relay

Silicon PIN Photodiode

Optocoupler, Phototransistor Output, with Base Connection, 300 V BV CEO

50 W Power Resistor, Thick Film Technology, TO-220

High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

Silicon PIN Photodiode

High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs

Power Resistor Thick Film Technology

High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs

PDS5100H. Product Summary. Features and Benefits. Mechanical Data. Description and Applications. Ordering Information (Note 5) Marking Information

Aluminum Electrolytic Capacitors Power Eurodin Printed Wiring

Power MOSFET FEATURES. IRFZ44PbF SiHFZ44-E3 IRFZ44 SiHFZ44 T C = 25 C

Standard Recovery Diodes, (Stud Version), 40 A

Aluminum Electrolytic Capacitors Power Economic Printed Wiring

Power MOSFET FEATURES. IRF610PbF SiHF610-E3 IRF610 SiHF610. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 V Gate-Source Voltage V GS ± 20

1.5SMC6.8AT3G Series, SZ1.5SMC6.8AT3G Series Watt Peak Power Zener Transient Voltage Suppressors. Unidirectional*

Silicon NPN Phototransistor

Power MOSFET FEATURES. IRL540PbF SiHL540-E3 IRL540 SiHL540

SuperTan Extended (STE) Capacitors, Wet Tantalum Capacitors with Hermetic Seal

Optocoupler, Phototransistor Output, 4 Pin LSOP, Long Creepage Mini-Flat Package

Ambient Light Sensor

Aluminum Electrolytic Capacitors Axial Miniature, Long-Life

STIEC45-xxAS, STIEC45-xxACS

Silicon NPN Phototransistor

Photovoltaic MOSFET Driver with Integrated Fast Turn-Off, Solid-State Relay

Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20

1 Form A Solid State Relay

Power MOSFET. IRF510PbF SiHF510-E3 IRF510 SiHF510. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

Reflective Optical Sensor with Transistor Output

BZW50. Transil, transient voltage surge suppressor (TVS) Features. Description

Optocoupler, Phototransistor Output, AC Input

AC Line Rated Ceramic Disc Capacitors Class X1, 760 V AC / Class Y1, 500 V AC

Optocoupler, Phototransistor Output, Dual Channel, SOIC-8 Package

Optocoupler, Phototransistor Output, with Base Connection

Aluminum Electrolytic Capacitors Radial Miniature, Low Impedance, High Vibration Capability

Solid Tantalum Surface Mount Capacitors TANTAMOUNT, Molded Case, Low ESR

Reflective Optical Sensor with Transistor Output

Metal Film Resistors, Pulse Withstanding Protective

SMD Aluminum Solid Capacitors with Conductive Polymer

P-Channel 20 V (D-S) MOSFET

1SMB59xxBT3G Series, SZ1SMB59xxT3G Series. 3 Watt Plastic Surface Mount Zener Voltage Regulators

Power MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

Low Current SMD LED PLCC-2

1SMA5.0AT3G Series, SZ1SMA5.0AT3G Series. 400 Watt Peak Power Zener Transient Voltage Suppressors. Unidirectional

Standard Recovery Diodes (Hockey PUK), 2100 A

Pulse Proof Thick Film Chip Resistors

P-Channel 20-V (D-S) MOSFET

Electrical Double Layer Energy Storage Capacitors Power and Energy Versions

Ultrabright White LED, Ø 3 mm

Aluminum Capacitors Solid Axial

Optocoupler, Phototransistor Output, with Base Connection

Power MOSFET. IRF9520PbF SiHF9520-E3 IRF9520 SiHF9520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS V Gate-Source Voltage V GS ± 20

P-Channel 1.25-W, 1.8-V (G-S) MOSFET

Surface Mount Multilayer Ceramic Chip Capacitors for Automotive Applications

Power Resistor for Mounting onto a Heatsink Thick Film Technology

Power MOSFET FEATURES. IRF540PbF SiHF540-E3 IRF540 SiHF540. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

P6KE. Transil, transient voltage surge suppressor (TVS) Features. Description. Complies with the following standards

SMD PTC - Nickel Thin Film Linear Thermistors

AC Line Rated Ceramic Disc Capacitors Class X1, 760 V AC, Class Y1, 500 V AC

N-Channel 100 V (D-S) MOSFET

Precision Surface Mount Resistors Wirewound or Metal Film Technologies

Standard Thick Film Chip Resistors

P-Channel 60 V (D-S) MOSFET

Automotive P-Channel 60 V (D-S) 175 C MOSFET

AC and Pulse Film Foil Capacitors KP Radial Potted Type

700 MHz, -3 db Bandwidth; Dual SPDT Analog Switch

NTC Thermistors, Mini Lug Sensors

Power MOSFET FEATURES. IRF9640PbF SiHF9640-E3 IRF9640 SiHF9640

Load Switch with Level-Shift

SM712 Series 600W Asymmetrical TVS Diode Array

Insulated Precision Wirewound Resistors Axial Leads

1SMB5.0AT3G Series, SZ1SMB5.0AT3G Series. 600 Watt Peak Power Zener Transient Voltage Suppressors. Unidirectional

Metal Film Resistors, Industrial, Flameproof

Pulse Proof, High Power Thick Film Chip Resistors

2.5 A Output Current IGBT and MOSFET Driver

Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20

Optocoupler, Photodarlington Output, Dual Channel, SOIC-8 Package

IR Receiver Module for Light Barrier Systems

Knob Potentiometer with Switch

High Stability - High Temperature (230 C) Thin Film Wraparound Chip Resistors, Sulfur Resistant

Transcription:

Surface Mount TRANSZORB Transient Voltage Suppressors DO-214AB (SMC) PRIMARY CHARACTERISTICS V BR uni-directional 6.40 V to 231 V V BR bi-directional 6.40 V to 231 V V WM 5.0 V to 188 V P PPM 1500 W P D 6.5 W I FSM (uni-directional only) 200 A T J max. 150 C Polarity Uni-directional, bi-directional Package DO-214AB (SMCJ) DEVICES FOR BI-DIRECTION APPLICATIONS For bi-directional devices use CA suffix (e.g. SMCJ188CA). Electrical characteristics apply in both directions. FEATURES Low profile package Ideal for automated placement Glass passivated chip junction Available in uni-directional and bi-directional Excellent clamping capability Very fast response time Low incremental surge resistance Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C AEC-Q1 qualified Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive, and telecommunication. MECHANICAL DATA Case: DO-214AB (SMCJ) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, AEC-Q1 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B2 E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: For uni-directional types the band denotes cathode end, no marking on bi-directional types RATINGS (T A = 25 C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Peak pulse power dissipation with a /0 μs waveform (1)(2) P PPM 1500 W Peak pulse current with a /0 μs waveform (1) See next table A Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2) I FSM 200 A Power dissipation on infinite heatsink, T A = 50 C P D 6.5 W Operating junction and storage temperature range T J, T STG - 55 to + 150 C Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T A = 25 C per fig. 2. (2) Mounted on 0.31" x 0.31" (8.0 mm x 8.0 mm) copper pads to each terminal Revision: -Dec-13 1 Document Number: 88394 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?90

ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) DEVICE TYPE MODIFIED J BEND LEAD DEVICE MARKING CODE BREAKDOWN VOLTAGE V BR AT I (1) T (V) TEST CURRENT I T (ma) STAND-OFF VOLTAGE V WM (V) REVERSE LEAKAGE AT V WM I D (μa) (3) PEAK PULSE SURGE CURRENT (A) (2) CLAMPING VOLTAGE AT V C (V) UNI BI MIN. MAX. (+) SMCJ5.0A (5) GDE GDE 6.40 7.07 5.0 0 163.0 9.2 (+) SMCJ6.0A GDG GDG 6.67 7.37 6.0 0 145.6.3 (+) SMCJ6.5A GDK BDK 7.22 7.98 6.5 500 133.9 11.2 (+) SMCJ7.0A GDM GDM 7.78 8.60 7.0 200 125.0 12.0 (+) SMCJ7.5A GDP BDP 8.33 9.21 1.0 7.5 116.3 12.9 (+) SMCJ8.0A GDR BDR 8.89 9.83 1.0 8.0 50 1.3 13.6 (+) SMCJ8.5A GDT BDT 9.44.4 1.0 8.5 20 4.2 14.4 (+) SMCJ9.0A GDV BDV.0 11.1 1.0 9.0 97.4 15.4 (+) SMCJA GDX BDX 11.1 12.3 1.0 5.0 88.2 17.0 (+) SMCJ11A GDZ GDZ 12.2 13.5 1.0 11 5.0 82.4 18.2 (+) SMCJ12A GEE BEE 13.3 14.7 1.0 12 5.0 75.4 19.9 (+) SMCJ13A GEG GEG 14.4 15.9 1.0 13 1.0 69.8 21.5 (+) SMCJ14A GEK BEK 15.6 17.2 1.0 14 1.0 64.7 23.2 (+) SMCJ15A GEM BEM 16.7 18.5 1.0 15 1.0 61.5 24.4 (+) SMCJ16A GEP GEP 17.8 19.7 1.0 16 1.0 57.7 26.0 (+) SMCJ17A GER GER 18.9 20.9 1.0 17 1.0 54.3 27.6 (+) SMCJ18A GET BET 20.0 22.1 1.0 18 1.0 51.4 29.2 (+) SMCJ20A GEV BEV 22.2 24.5 1.0 20 1.0 46.3 32.4 (+) SMCJ22A GEX BEX 24.4 26.9 1.0 22 1.0 42.3 35.5 (+) SMCJ24A GEZ BEZ 26.7 29.5 1.0 24 1.0 38.6 38.9 (+) SMCJ26A GFE BFE 28.9 31.9 1.0 26 1.0 35.6 42.1 (+) SMCJ28A GFG BFG 31.1 34.4 1.0 28 1.0 33.0 45.4 (+) SMCJ30A GFK BFK 33.3 36.8 1.0 30 1.0 31.0 48.4 (+) SMCJ33A GFM BFM 36.7 40.6 1.0 33 1.0 28.1 53.3 (+) SMCJ36A GFP BFP 40.0 44.2 1.0 36 1.0 25.8 58.1 (+) SMCJ40A GFR BFR 44.4 49.1 1.0 40 1.0 23.3 64.5 (+) SMCJ43A GFT BFT 47.8 52.8 1.0 43 1.0 21.6 69.4 (+) SMCJ45A GFV GFV 50.0 55.3 1.0 45 1.0 20.6 72.7 (+) SMCJ48A GFX GFX 53.3 58.9 1.0 48 1.0 19.4 77.4 (+) SMCJ51A GFZ GFZ 56.7 62.7 1.0 51 1.0 18.2 82.4 (+) SMCJ54A GGE GGE 60.0 66.3 1.0 54 1.0 17.2 87.1 (+) SMCJ58A GGG GGG 64.4 71.2 1.0 58 1.0 16.0 93.6 (+) SMCJ60A GGK GGK 66.7 73.7 1.0 60 1.0 15.5 96.8 (+) SMCJ64A GGM GGM 71.1 78.6 1.0 64 1.0 14.6 3 (+) SMCJ70A GGP GGP 77.8 86.0 1.0 70 1.0 13.3 113 (+) SMCJ75A GGR GGR 83.3 92.1 1.0 75 1.0 12.4 121 (+) SMCJ78A GGT GGT 86.7 95.8 1.0 78 1.0 11.9 126 (+) SMCJ85A GGV GGV 94.4 4 1.0 85 1.0.9 137 (+) SMCJ90A GGX GGX 111 1.0 90 1.0.3 146 (+) SMCJA GGZ GGZ 111 123 1.0 1.0 9.3 162 (+) SMCJ1A GHE GHE 122 135 1.0 1 1.0 8.5 177 (+) SMCJ120A GHG GHG 133 147 1.0 120 1.0 7.8 193 (+) SMCJ130A GHK GHK 144 159 1.0 130 1.0 7.2 209 (+) SMCJ150A GHM GHM 167 185 1.0 150 1.0 6.2 243 (+) SMCJ160A GHP GHP 178 197 1.0 160 1.0 5.8 259 (+) SMCJ170A GHR GHR 189 209 1.0 170 1.0 5.5 275 SMCJ188A GHS GHS 209 231 1.0 188 1.0 4.6 328 Notes (1) Pulse test: t p 50 ms (2) Surge current waveform per fig. 3 and derate per fig. 2 (3) For bi-directional types having V WM of V and less, the I D limit is doubled (4) All terms and symbols are consistent with ANSI/IEEE C62.35 (5) For the bi-directional SMCJ5.0CA, the maximum V BR is 7.25 V (6) V F = 3.5 V at I F = A (uni-directional only) (+) Underwriters laboratory recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number E136766 for both uni-directional and bi-directional devices Revision: -Dec-13 2 Document Number: 88394 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?90

Peak Pulse Power (P PP ) or Current (I PP ) Derating in Percentage, % P PPM - Peak Pulse Power (kw) www.vishay.com THERMAL CHARACTERISTICS (T A = 25 C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Typical thermal resistance, junction to ambient air (1) R JA 75 C/ W Typical thermal resistance, junction to lead R JL 15 Note (1) Mounted on minimum recommended pad layout ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SMCJ5.0A-E3/57T 0.211 57T 850 7" diameter plastic tape and reel SMCJ5.0A-E3/9AT 0.211 9AT 3500 13" diameter plastic tape and reel SMCJ5.0AHE3/57T (1) 0.211 57T 850 7" diameter plastic tape and reel SMCJ5.0AHE3/9AT (1) 0.211 9AT 3500 13" diameter plastic tape and reel Note (1) AEC-Q1 qualified RATINGS AND CHARACTERISTICS CURVES (T A = 25 C unless otherwise noted) 1 0.31 x 0.31" (8.0 x 8.0 mm) Copper Pad Areas 0.1 0.1 µs 1.0 µs µs µs 1.0 ms ms t d - Pulse Width (s) Fig. 1 - Peak Pulse Power Rating Curve - Peak Pulse Current, % I RSM 150 50 t r = µs Peak Value Half Value - t d 0 0 1.0 2.0 3.0 4.0 t - Time (ms) T J = 25 C Pulse Width (t d ) is defined as the Point where the Peak Current decays to 50 % of I PP 2 /0 µs Waveform as defined by R.E.A. Fig. 3 - Pulse Waveform 75 50 25 0 0 25 50 75 125 150 175 200 T J - Initial Temperature ( C) Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature C J - Junction Capacitance (pf) 20 000 000 0 V R, Measured at Stand-Off Voltage V WM Uni-Directional Bi-Directional Measured at Zero Bias T J = 25 C f = 1.0 MHz V sig = 50 mvp-p 1 400 V WM - Reverse Stand-Off Voltage (V) Fig. 4 - Typical Junction Capacitance Uni-Directional Revision: -Dec-13 3 Document Number: 88394 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?90

Transient Thermal Impedance ( C/W) www.vishay.com 200 1.0 0.1 0.001 0.01 0.1 1 0 t p - Pulse Duration (s) 1 Fig. 5 - Typical Transient Thermal Impedance Fig. 6 - Maximum Non-Repetitive Peak Forward Surge Current Uni-Directional Use Only Peak Forward Surge Current (A) T J = T J max. 8.3 ms Single Half Sine-Wave Number of Cycles at 60 Hz PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AB (SMC J-Bend) Cathode Band Mounting Pad Layout 0.185 (4.69) MAX. 0.126 (3.20) 0.114 (2.90) 0.246 (6.22) 0.220 (5.59) 0.126 (3.20) MIN. 0.280 (7.11) 0.260 (6.60) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.3 (2.62) 0.079 (2.06) 0.320 REF. 0.060 (1.52) 0.030 (0.76) 0.320 (8.13) 0.305 (7.75) 0.008 (0.2) 0 (0) Revision: -Dec-13 4 Document Number: 88394 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?90

Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Revision: 13-Jun-16 1 Document Number: 90