DATA SHEET. J174; J175; J176; J177 P-channel silicon field-effect transistors DISCRETE SEMICONDUCTORS



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DISCRETE SEMICONDUCTORS DATA SHEET P-channel silicon field-effect transistors File under Discrete Semiconductors, SC07 April 1995

DESCRIPTION Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended for application with analog switches, choppers, commutators etc. A special feature is the interchangeability of the drain and source connections. PINNING 1 2 3 handbook, halfpage MAM388 g d s 1 = source 2 = gate 3 = drain Note: Drain and source are interchangeable. Fig.1 Simplified outline and symbol, TO-92. QUICK REFERENCE DATA Drain-source voltage ± V DS max. 30 V Gate-source voltage V GSO max. 30 V Gate current I G max. 50 ma Total power dissipation up to T amb =50 C P tot max. 400 mw J174 J175 J176 J177 Drain current V DS = 15 V; V GS =0 I DSS min. max. 20 135 7 70 2 35 1.5 20 ma ma Drain-source ON-resistance V DS = 0.1 V; V GS =0 R DS on max. 85 125 250 300 Ω April 1995 2

RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage ± V DS max. 30 V Gate-source voltage V GSO max. 30 V Gate-drain voltage V GDO max. 30 V Gate current (DC) I G max. 50 ma Total power dissipation up to T amb =50 C P tot max. 400 mw Storage temperature range T stg 65 to +150 C Junction temperature T j max. 150 C THERMAL RESISTANCE From junction to ambient in free air R th j-a = 250 K/W STATIC CHARACTERISTICS T j =25 C unless otherwise specified J174 J175 J176 J177 Gate cut-off current V GS = 20 V; V DS =0 I GSS max. 1 1 1 1 na Drain cut-off current V DS = 15 V; V GS = 10 V I DSX max. 1 1 1 1 na Drain current min. 20 7 2 1.5 ma V DS = 15 V; V GS = 10 V I DSS max. 135 70 35 20 ma Gate-source breakdown voltage I G =1µA; V DS =0 V (BR)GSS min. 30 30 30 30 V Gate-source cut-off voltage min. 5 3 1 0.8 V I D = 10 na; V DS = 15 V V GS off max. 10 6 4 2.25 V Drain-source ON-resistance V DS = 0.1 V; V GS =0 R DSon max. 85 125 250 300 Ω April 1995 3

DYNAMIC CHARACTERISTICS T j =25 C unless otherwise specified Input capacitance, f = 1 MHz V GS = 10 V; V DS =0V C is typ. 8 pf V GS =V DS =0 C is typ. 30 pf Feedback capacitance, f = 1 MHz V GS = 10 V; V DS =0V C rs typ. 4 pf Switching times (see Fig.2 + 3) J174 J175 J176 J177 Delay time t d typ. 2 5 15 20 ns Rise time t r typ. 5 10 20 25 ns Turn-on time t on typ. 7 15 35 45 ns Storage time t s typ. 5 10 15 20 ns Fall time t f typ. 10 20 20 25 ns Turn-off time t off typ. 15 30 35 45 ns Test conditions: V DD 10 6 6 6 V V GS off 12 8 6 3 V R L 560 1200 2000 2900 Ω V GS on 0 0 0 0 V handbook, halfpage V DD V GSoff 90% 50 Ω INPUT V out 10% R L 10% 10% V in D.U.T OUTPUT 50 Ω t f 90% 90% t r MBK292 t s t d MBK293 Fig.2 Switching times test circuit. Fig.3 Input and output waveforms; t d + t r =t on ; t s +t f =t off. April 1995 4

PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 D 2 e 1 e 3 b 1 L 1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b 1 c D d E e e 1 L L 1 (1) mm 5.2 5.0 0.48 0.40 0.66 0.56 0.45 0.40 4.8 4.4 1.7 1.4 4.2 3.6 2.54 1.27 14.5 12.7 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT54 TO-92 SC-43 97-02-28 April 1995 5

DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Short-form specification The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1995 6