Innovative Green Power Solutions AC/DC Charger/Adapter Reference Designs For DOE (Level 6) Standard Rev 1.5 Jan 2014-1- www.active-semi.com
Application Change Note Revision History 2014 - Jan - 26 Rev 1.5 Page 9,10 Page 11,12 Page 3,5,7,9,11,13 Page 9,10,11,12 Page 19,20,21,22 Cover Page Page 11,12 Page 13,14 Cover Page Update schematic Update transformer and BOM Update schematic Update transformer and BOM Update demo board picture Add ACT334 and ACT512 12V0.5A solutions Add ACT410 and ACT411 solutions, update ACT410/411 standby power Change Title Add ACT413 5V2.4A solution Add ACT512 5V2.4A solution Change Title and List Table of Contents 1. ACT330 5V 1A Universal Charger for DOE standard.........3 2. ACT334 5V 1A Universal Charger for DOE standard.........5 3. ACT512 5V 2A Universal Adaptor for DOE standard.............7 4. ACT410 5V 2.1A Universal Adaptor for DOE standard.........9 5. ACT413 5V 2.4A Universal Adaptor for DOE standard.........11 6. ACT512 5V 2.4A Universal Adaptor for DOE standard...........13 7. ACT512 5V 4A Universal Adaptor for DOE standard..........15 8. ACT334 12V 0.5A Universal Adaptor for DOE standard...............17 9. ACT512 12V 0.5A Universal Adaptor for DOE standard............19 10. ACT411 12V 1A Universal Adaptor for DOE standard......... 21 11. ACT512 12V 1A Universal Adaptor for DOE standard................ 23 12. ACT513 12V 2A Universal Adaptor for DOE standard..........25-2-
ACT330 5V/1A UNIVERSAL CHARGER FOR DOE SOLUTION Average Input Voltage Device Standby Power Output Voltage Output Power Topology 90-264VAC ACT330 75.10% 38mW 5V 5W PSR flyback Key Features Patented Primary Side Regulation Technology Lowest total cost solution for cell phone charger using PWM IC Universal input voltage range from 85 to 264 VAC Accurate CV (5%) and CC (10%) performance Adjustable up to 40kHz Switching Frequency Integrated Output Cord Compensation CV & CC correction for Input line, output DC cord and transformer inductance variation No-load standby power < 0.05W Exceed the latest DOE average efficiency requirement No Y capacitor for EMI filter Short circuit and over-voltage protection Tiny SOT23-6 package. Demo Board Picture Normal size W*L*H=29mm*48.5mm*16mm Schematic Picture 1-3-
Bill of Materials Build up High Performance AC/DC Switching Power Solutions REF DESCRIPTION MFTR U1 IC, ACT330,SOT23-6 Active-Semi. C1,C2 Capacitor, Electrolytic, 6.8uF/400V, 10x12mm KSC C3 Capacitor, Ceramic, 1000pF/500V,1206,SMD POE C4 Capacitor, Electrolytic,4.7uF/35V,5x11mm KSC C5 Capacitor, Solid, 470uF/10V, 8x12mm Rubcon C6 Capacitor, Electrolytic, 330uF/10V, 8x12mm KSC C9 Capacitor, Ceramic,1000pF/50V, 0805, SMD POE D1-D4 Diode,Rectifier,1000V/1A,1N4007, DO-41 Good-Ark D5,D6 Diode,Ultra Fast, FR107,1000V/1.0A, DO-41 Good-Ark D8 Diode, schottky, 40V/5A, SL540, DO-214AB,SMD Vishay L1 Axial Inductor, 1.5mH, 0410,Dip Amode Tech Q1 Transistor, HFE 20-25, NPN,13003,TO-126 Huawei PCB1 PCB, L*W*T=48.5x29x1.6mm,Cem-1,Rev:A Jintong FR1 Wire Round Resistor,1W,10 ohm, KNP, 5% TY-OHM R1 Chip Resistor, 22 ohm, 0603, 5% TY-OHM R2 Chip Resistor, 750K ohm, 1206, 5% TY-OHM R3 Chip Resistor, 470 ohm, 1206, 5% TY-OHM R4 Chip Resistor, 22 ohm, 0805, 5% TY-OHM R5 Chip Resistor, 60.4K ohm, 0805,1% TY-OHM R6 Chip Resistor, 10.2K ohm, 0805, 1% TY-OHM R7,R8 Chip Resistor, 5.1M ohm, 1206, 5% TY-OHM R9 Chip Resistor, 0.787 ohm, 1206,1% TY-OHM R10 Chip Resistor, 80K ohm, 0805, 5% TY-OHM Windi ng P1 Note:1,Core and Bobbin:EE16 2,SH1 and SH2 are shielding; P1 & P2 are primary and S1 is secondary 3,Reverse the direction of bobbin when do the S1. 50Hz, 1 minute, from primary and secondary Terminal Wire Sta rt Finish Turn s Type Size*QTY 2 --> <-- <-- --> 1 SH1 5 NC 8 S1 8 10 10 P2 SH2 3 5 4 3 Electrical specifications Item Description Condition Limits 1 Electrical Strength 2 P1 Inductance Inductance between pins 1 and 2 at 1Vac & 1kHz 3 P1 Leakage Inductance 47 W 0.15Φ*1 1 47 W 0.15Φ*1 1 46 W 0.15Φ*1 1 14 Cor e 1 1 W 0.15Φ*4 1 TEX- E 0.50Φ*1 1 W W 0.15Φ*2 1 0.15Φ*1 1 Laye r Inductance between pins 1 and 2 with pins 4-5 and 8-10 shorted Insulation Thick/ Wide 3000 Vac 1.8mH± % 7 75µH Typical Performance Characteristics Standby Power Vs Input Voltage Lay er 5W 1 5W 1 5 5 5 5W 5W 2 2 R11 Chip Resistor, 2.2K ohm, 0805, 5% TY-OHM R13 Chip Resistor, 10 ohm, 0805, 5% TY-OHM T1 Transformer, Lp=1.8mH, EE16 Standy Power (mw) 60 50 40 30 20 10 0 90 115 230 264 Input Voltage (VAC) STANDBY POWER Vs Po Transformer 80.00% 78.00% 76.00% 74.00% 72.00% 115V 230V 70.00% 25% Po 50% Po 75% Po 100% Po Output Power EFFICIENCY(24AWG,1.8M,R=0.308Ω) EVALUATION KITS ACT330_5V1A_DOE_Rev1.0-4-
ACT334 5V/1A UNIVERSAL CHARGER FOR DOE STANDARD Input Voltage Device Average Standby Power Output Voltage Output Power Topology 90-264VAC ACT334 75.60% 39mW 5V 5W PSR flyback Key Features Patented Primary Side Regulation Technology Lowest total cost solution for cell phone charger using PWM IC Universal input voltage range from 85 to 264 VAC Accurate CV (5%) and CC (10%) performance Adjustable up to 80kHz Switching Frequency Integrated Output Cord Compensation CV & CC correction for Input line, output DC cord and transformer inductance variation No-load standby power < 0.05W Exceed the latest DOE average efficiency requirement No Y capacitor for EMI filter Short circuit and over-voltage protection Tiny SOT23-6 package. Demo Board Picture Mini size W*L*H=25.5mm*46.5mm*16mm Schematic Picture 2-5-
Bill of Materials REF DESCRIPTION MFTR U1 IC, ACT334,SOT23-6 Active-Semi. C1 Capacitor, Electrolytic, 4.7uF/400V, 8x12mm KSC C2 Capacitor, Electrolytic, 6.8uF/400V, 10x12mm KSC C3 Capacitor, Ceramic, 1000pF/500V,1206,SMD POE C4 Capacitor, Electrolytic,4.7uF/35V,5x11mm KSC C5 Capacitor, Solid, 470uF/10V, 8x12mm Rubcon C6 Capacitor, Electrolytic, 330uF/10V, 8x12mm KSC C9 Capacitor, Ceramic,1000pF/50V, 0805, SMD POE D1-D4 Diode,Rectifier,1000V/1A,1N4007, DO-41 Good-Ark D5,D6 Diode,Ultra Fast, FR107,1000V/1.0A, DO-41 Good-Ark D8 Diode, schottky, 40V/5A, SL540, DO-214AB,SMD Vishay L1 Axial Inductor, 1.5mH, 0410,Dip Amode Tech Q1 Transistor, HFE 20-25, NPN,13003,TO-126 Huawei PCB1 PCB, L*W*T=48.5x29x1.6mm,Cem-1,Rev:A Jintong FR1 Wire Round Resistor,1W,10 ohm,knp, 5% TY-OHM R1 Chip Resistor, 22 ohm, 0603, 5% TY-OHM R2 Chip Resistor, 750K ohm, 1206, 5% TY-OHM R3 Chip Resistor, 470 ohm, 1206, 5% TY-OHM Windi ng P1 Build up Note:1,Core and Bobbin:EE13 2,SH1 and SH2 are shielding; P1 & P2 are primary and S1 is secondary 3,Reverse the direction of bobbin when do the S1. 50Hz, 1 minute, from primary and secondary Terminal Wire Sta rt Finish Turn s Type Size*QTY 2 --> <-- <-- --> 1 SH1 4 NC 7 S1 6 8 8 P2 SH2 (5) 4 3 (5) Electrical specifications Item Description Condition Limits 1 Electrical Strength 2 P1 Inductance Inductance between pins 1 and 2 at 1Vac & 1kHz 3 P1 Leakage Inductance 38 W 0.15Φ*1 1 38 W 0.15Φ*1 1 38 W 0.15Φ*1 1 11 Cor e 1 1 W 0.15Φ*4 1 TEX- E 0.55Φ*1 1 W W 0.25Φ*2 1 0.15Φ*1 1 Laye r Inductance between pins 1 and 2 with pins 4-3 and 8-6 shorted Insulation Thick/ Wide 3000 Vac 1.5mH± % 7 75µH Typical Performance Characteristics Standby Power Vs Input Voltage Lay er 5W 1 5W 1 5 5 5 5W 5W 2 2 R4 Chip Resistor, 22 ohm, 0805, 5% TY-OHM R5 Chip Resistor, 68K ohm, 0805,1% TY-OHM R6 Chip Resistor, 11.8K ohm, 0805, 1% TY-OHM R7,R8 Chip Resistor, 10M ohm, 1206, 5% TY-OHM R9 Chip Resistor, 1 ohm, 1206,1% TY-OHM R10 Chip Resistor, 75K ohm, 0805, 5% TY-OHM R11 Chip Resistor, 3.3K ohm, 0805, 5% TY-OHM R13 Chip Resistor, 10 ohm, 0805, 5% TY-OHM T1 Transformer, Lp=1.5mH, EE13 Standy Power (mw) 60 50 40 30 20 10 0 90 115 230 264 Input Voltage (VAC) STANDBY POWER Vs Po Transformer 80.00% 78.00% 76.00% 74.00% 72.00% 115V 230V 70.00% 25% Po 50% Po 75% Po 100% Po Output Power EFFICIENCY(24AWG,1.8M,R=0.308Ω) EVALUATION KITS ACT334_5V1A_DOE_Rev1.0-6-
ACT512 5V/2A UNIVERSAL ADAPTOR FOR DOE STANDARD Input Voltage Device Average Standby Power Output Voltage Output Power Topology 90-264VAC ACT512 80.30% 90mW 5V 10W CCM&QR flyback Key Features Optimized CCM and advanced Quasi-Resonant operation. Advanced burst mode operation enables low standby power of 100mW. Frequency jetting and Quasi-Resonant technology to decrease EMI. Patented frequency foldback and ActiveQR TM technology increases the average system efficiency compared to conventional solutions and exceeds the latest DOE efficiency standard with good margin. Integrated patented line compensation, provide OCP/OLP protection. Built-in Soft-Start and Fast-Start circuit to decrease main external mosfet stress, output voltage rise time and output voltage overshoot. Integrate comprehensive protection. In case of over temperature, over/under voltage, short winding, short current sense resistor, open loop Schematic and overload protection. Tiny SOT23-6 package. Demo Board Picture Normal size W*L*H=38mm*38mm*22mm Picture 3-7-
Bill of Materials Transformer REF DESCRIPTION MFTR IC1 IC, ACT512, SOT23-6 Active-Semi C1 Capacitor, Electrolytic, 10µF/400V, 10 14mm KSC C2 Capacitor, Electrolytic, 10µF/400V, 10 14mm POE C3 Capacitor, Solid, 470µF/16V, 8 11mm Rubcon C4 Capacitor, Electrolytic,6.8µF/35V, SMD 0805 POE C5 Capacitor, Ceramic, 100PF/50V,0603,SMD POE C6 Capacitor, Ceramic,1000pF/50V,0603,SMD POE C7 Capacitor, Ceramic,100pF/10V,1812,SMD POE C0 Capacitor, Ceramic,100nF/100V,0603,SMD POE C13 Capacitor, Ceramic,1000pF/500V,0805,SMD POE BD MB6S 1.5A/400V Good-Ark D1,D2 RS1M SMD Good-Ark D3 Diode, Schottky, 60V/30A, SBR3060, DO-220 Diodes Build up Terminal Winding Start Finish Turn s Type Size*QT Y La yer Thick/ Wide Layer P1 2 F 32 W 0.18Φ*1 1 SH1 3 NC 15 W 0.12Φ*3 1 W S1 B A 7 W 0.45Φ*2 1 P2 4 3 17 W 0.15Φ*2 1 P3 F 1 32 W 0.18Φ*1 1 Wire Note:1,Core and Bobbin:RM6 2,SH1 is shielding; P1,P2 & P3 are primary and S1 is secondary 3,Reverse the direction of bobbin when do the S1 Insulation Dgate Diode L4148 SMD Good-Ark L1 Axial Inductor, 1.5mH, 5*7, DIP SoKa Q1 Mosfet Transisor, 04N65, TO-220 Infineon Item Electrical specifications Description Condition Limits PCB1 PCB, L*W*T =38x38x1mm, Cem-1, Rev:A Jintong F1 Fusible, 1A/250V TY-OHM R1 Chip Resistor,1M Ω, SMD 1206, 5% TY-OHM R2 Chip Resistor,1M Ω, SMD 1206, 5% TY-OHM 1 Electrical Strength 2 P1 Inductance 3 P1 Leakage Inductance 50Hz, 1 minute, from primary and secondary Inductance between pins 2and 1at 1Vac & 1kHz Inductance between pins 3 with pins4and A- B shorted 3000 Vac 1.3mH± % 7 75µH R3 Chip Resistor, 4.7Ω, 0805, 5% TY-OHM R3B Chip Resistor, 22Ω, 0805, 5% TY-OHM R4 Chip Resistor,60.4kΩ, 0603, 1% TY-OHM Typical Performance Characteristics Standby Power Vs Input Voltage R5 Chip Resistor,11kΩ, 0603, 1% TY-OHM R6 Chip Resistor, 10 Ω, 0603, 5% TY-OHM R7 Chip Resistor, 1kΩ,0603, 5% TY-OHM R8 Chip Resistor, 1KΩ, 0603, 5% TY-OHM R0 Chip Resistor, 3kΩ, 0603, 5% TY-OHM R9 Chip Resistor, 1.5Ω, 1206, 1% TY-OHM R10 Chip Resistor, 10.7kΩ, 0603, 1% TY-OHM R11 Chip Resistor, 10kΩ, 0603, 1% TY-OHM R12 Chip Resistor, 100Ω, 0805,5% TY-OHM R13 Chip Resistor,750kΩ, 0805,5% TY-OHM Standy Power (mw) 100 50 0 90 115 230 264 Input Voltage (VAC) STANDBY POWER Vs Po R14 Chip Resistor,360Ω, 0603, 5% TY-OHM L1 RM6 Lm=1.3mH CY1 Y capacitance, 1000pF/400V,Y1 SEC IC3 Opto-coupler, PC817C CTR=200 SMD Sharp IC2 Voltage Regulator, TL431A, Vref=2.5V TO-92 ST 90.00% 115V 85.00% 230V 80.00% 75.00% 70.00% 25% Po 50% Po 75% Po 100% Po Output Power EFFICIENCY(20AWG,1.8M,R=0.13Ω) EVALUATION KITS ACT512_5V2A_DOE_Rev1.0-8-
ACT410 5V/2.1A UNIVERSAL CHARGER FOR DOE SOLUTION Average Input Voltage Device Standby Power Output Voltage Output Power Topology 90-264VAC ACT410 80% 90mW 5V 10.5W PSR flyback Key Features Patented primary switching regulator technology, DCM & Quasi-Resonant PWM Controller Lowest total cost solution for cell phone charger using PWM IC Universal input voltage range from 85 to 264 VAC Accurate CV (5%) and CC (15%) performance Adjustable up to 110kHz Switching Frequency Integrated Output Cord Compensation CV & CC correction for Input line, output DC cord and transformer inductance variation No-load standby power < 0.10W Exceed the latest DOE average efficiency requirement Short circuit and over-voltage protection Tiny SOT23-6 package. Demo Board Picture Normal size W*L*H=21mm*40mm*10mm Schematic Picture 4-9-
Bill of Materials Build up High Performance AC/DC Switching Power Solutions REF DESCRIPTION MFTR Terminal Wire Insulation U1 IC, ACT410,SOT23-6 Active-Semi. C1,C2 Capacitor, Electrolytic, 10uF/400V, 10x15mm KSC C3 Capacitor, Ceramic, 1000pF/500V, 0805,SMD POE C4 Capacitor, Electrolytic,10uF/35V,5x11mm KSC C6,C7 Capacitor, Electrolytic, 820µF/6.3V, 6.3 16mm KSC C8 Capacitor, Ceramic, 0.1uF/25V, 0805,SMD POE C9 Capacitor, Ceramic, 1000pF/100V, 0805,SMD POE Windi ng Start Finish Turns P1 2 3 38 SH1 4 NC 45 S1 B A P2 5 4 20 P3 3 1 38 7 Typ e Size*QT Y La yer W 0.20Φ*1 1 W 0.15Φ*3 1 TEX -E 0.40Φ*2 1 W 0.20Φ*2 1 W 0.20Φ*1 1 Thick/ Wide La ye r W C10 Capacitor, Ceramic, 200pF/100V, 0805,SMD POE CY1 Safety Y1,Capacitor,1000pF/400V,Dip UXT SH2 core 4 3 Cop per wire 0.18Φ*1 1 BD1 Bridge Rectifier,D1010S,1000V/1.0A,SDIP PANJIT D2 Fast Recovery Rectifier, RS1M,1000V/1.0A, RMA PANJIT D3 Fast Recovery Rectifier,RS1D,200V/1.0A,SMA PANJIT D4 Diode, Schottky, 45V/10A, S10U45S, SMD Diodes D5 Diode, 1N4148 SMD PANJIT L1 Axial Inductor, 1.5mH, 5*7,Dip SoKa Q1 Mosfet Transistor, 4N65,TO-220 AUK Note:1,Core and Bobbin:EFD15 2,SH1 and SH2 are shielding; P1 & P2 are primary and S1 is secondary 3,Reverse the direction of bobbin when do the S1. Electrical specifications Item Description Condition Limits 1 Electrical Strength 50Hz, 1 minute, from primary and secondary 3000 Vac PCB1 PCB, L*W*T=40x28x1.6mm,Cem-1,Rev:A Jintong FR1 Fuse,1A/250V TY-OHM R2 Carbon Resistor, 200K ohm, 1206, 5% TY-OHM 2 P1 Inductance Inductance between pins 1 and 2 at 1Vac & 1kHz 3 P1 Leakage Inductance Inductance between pins 1 and 2 with pins 4-5 and A-B shorted 0.36mH± % 7 75µH R3 Chip Resistor, 100 ohm, 0805, 5% TY-OHM R1,R4 Chip Resistor, 22 ohm, 0805, 5% TY-OHM Typical Performance Characteristics R5 Chip Resistor, 68K ohm, 0805,1% TY-OHM R6 Chip Resistor, 11.5K ohm, 0805, 1% TY-OHM R7 Chip Resistor, 1M ohm, 0805, 5% TY-OHM R8 Chip Resistor, 1M ohm, 0805, 5% TY-OHM R9 Chip Resistor, 1.1ohm, 1206,1% TY-OHM R10 Chip Resistor, 240 ohm, 0805, 5% TY-OHM R11 Chip Resistor, 3.0K ohm, 0805, 5% TY-OHM R12 Chip Resistor, 3K ohm, 0805, 5% TY-OHM R13 Chip Resistor, 22 ohm, 1206, 5% TY-OHM R14 Chip Resistor, 100K ohm, 0805, 5% TY-OHM R15 Chip Resistor, 4K ohm, 0805, 5% TY-OHM T1 Transformer, Lp=0.36mH, EFD15 Standy Power (mw) Standby Power Vs Input Voltage 160 140 120 100 80 60 40 20 0 85 115 230 264 Input Voltage (VAC) STANDBY POWER Vs Po Transformer 84.000% 80.000% 76.000% 72.000% 68.000% 64.000% 60.000% 115V 230V 25% Po 50% Po 75% Po 100% Po Output Power EFFICIENCY USB TERMINAL( MALE AND FEMALE ) EVALUATION KITS ACT410_5V2.1A_DOE_Rev1.0-10-
ACT413 5V/2.4A UNIVERSAL ADAPTOR FOR DOE STANDARD Input Voltage Device Average Standby Power Output Voltage Output Power Topology 90-264VAC ACT413 83.10% 93mW 5V 12W PSR flyback Key Features Patented primary switching regulator technology, DCM & Quasi-Resonant PWM Controller Lowest total cost solution for cell phone charger using PWM IC Universal input voltage range from 85 to 264 VAC Accurate CV (5%) and CC (15%) performance Adjustable up to 80kHz Switching Frequency Integrated Output Cord Compensation CV & CC correction for Input line, output DC cord and transformer inductance variation No-load standby power < 0.1W Exceed the latest DOE average efficiency requirement Short circuit and over-voltage protection Tiny SOT23-6 package. Schematic Demo Board Picture Flat size W*L*H=43mm*65mm*10mm Picture 5-11-
Bill of Materials REF DESCRIPTION MFTR U1 IC, ACT413,SOT23-6 Active-Semi. C1,C2 Capacitor, Electrolytic, 15uF/400V, 10x15mm KSC C3 Capacitor, Ceramic, 1000pF/500V, 0805,SMD POE C4 Capacitor, Electrolytic,6.8uF/35V,5x11mm KSC C9 Capacitor, Solid, 680µF/6.3V, 6.3 16mm KSC C12 Capacitor, Solid,330µF/6.3V, 6.3 16mm KSC C11 Capacitor, Ceramic, 0.1uF/25V, 0805,SMD POE C8 Capacitor, Ceramic, 1000pF/100V, 0805,SMD POE C7 Capacitor, Ceramic, 200pF/50V, 0805,SMD POE CY1 Safety Y1,Capacitor,1000pF/400V,Dip UXT Windi ng Build up Terminal Tur Start Finish ns Type Wire Size*QT Y La yer P1 9 8 28 W 0.20Φ*1 1 SH1 3 NC 18 W 0.15Φ*2 1 S1 A B 5 TEX-E 0.6Φ*1 1 P2 8 6 28 W 0.20Φ*1 1 P3 2 3 3 7 SH2 core 3 3 13 W 0.2Φ*2 1 Copper wire 0.2Φ*1 1 Note:1,Core and Bobbin:ER2010 2,SH1 and SH2 are shielding; P1,P2 & P3 are primary and S1 is secondary Insulation La Thick/ ye Wide r W 2 BD1 Bridge Rectifier,D1010S,1000V/1.0A,SDIP PANJIT D1 Fast Recovery Rectifier, RS1M,1000V/1.0A, RMA PANJIT D2 Fast Recovery Rectifier,RS1M,1000V/1.0A,SMA PANJIT Electrical specifications Item Description Condition Limits D3,D4 Diode, Schottky, 45V/10A, S10U45S, SMD Diodes D1 Diode, 1N4148 SMD PANJIT L1 Axial Inductor, 1.5mH, 5*7,Dip SoKa L2 Axial Inductor, 1.5mH, 5*7,Dip SoKa Q1 Mosfet Transistor,4N60,TO-220 AUK 1 Electrical Strength 50Hz, 1 minute, from primary and secondary 2 P1 Inductance Inductance between pins 9 and 6 at 1Vac & 1kHz 3 P1 Leakage Inductance Inductance between 9 pins 6 with pins A- B and pins 2-3 shorted 3000 Vac 0.60mH± % 7 75µH PCB1 PCB, L*W*T=40x28x1.6mm,Cem-1,Rev:A Jintong FR1 Fuse,1A/250V TY-OHM R5 Carbon Resistor, 510K ohm, 1206, 5% TY-OHM R4 Chip Resistor, 100 ohm, 0805, 5% TY-OHM R11,R1 4,R15 Chip Resistor, 22 ohm, 0805, 5% TY-OHM R10 Chip Resistor, 51.1K ohm, 0805,1% TY-OHM R12 Chip Resistor, 10.2K ohm, 0805, 1% TY-OHM R2 Chip Resistor, 1M ohm, 0805, 5% TY-OHM R3 Chip Resistor, 1M ohm, 0805, 5% TY-OHM R7 Chip Resistor, 1.15ohm, 1206,1% TY-OHM R8 Chip Resistor, 470 ohm, 0805, 5% TY-OHM R1 Chip Resistor, 3.0K ohm, 0805, 5% TY-OHM R18 Chip Resistor, 1.2K ohm, 0805, 5% TY-OHM R9 Chip Resistor, 100K ohm, 0805, 5% TY-OHM Typical Performance Characteristics Standy Power mw) Standby Power Vs Input Voltage 140 90 40-10 90 115 230 264 Input Voltage (VAC) STANDBY POWER Vs Po T1 Transformer, Lp=0.6mH, ER2010 Transformer 80.00% 70.00% 115V 60.00% 230V 50.00% 40.00% 25% Po 50% Po 75% Po 100% Po Output Power EFFICIENCY ( USB TERMINAL ) EVALUATION KITS ACT413_5V2.4A_DOE_Rev1.0-12-
ACT512 5V/2.4A UNIVERSAL ADAPTOR FOR DOE STANDARD Input Voltage Device Average Standby Power Output Voltage Output Power Topology 90-264VAC ACT512 82.30% 84mW 5V 12W CCM&QR flyback Key Features Optimized CCM and advanced Quasi-Resonant operation. Advanced burst mode operation enables low standby power of 100mW. Frequency jetting and Quasi-Resonant technology to decrease EMI. Patented frequency foldback and ActiveQR TM technology increases the average system efficiency compared to conventional solutions and exceeds the latest DOE efficiency standard with good margin. Integrated patented line compensation, provide OCP/OLP protection. Built-in Soft-Start and Fast-Start circuit to decrease main external mosfet stress, output voltage rise time and output voltage overshoot. Integrate comprehensive protection. In case of over temperature, over/under voltage, short winding, short current sense resistor, open loop Schematic and overload protection. Tiny SOT23-6 package. Demo Board Picture Normal size W*L*H=38mm*38mm*22mm Picture 6-13-
Bill of Materials Transformer REF DESCRIPTION MFTR IC1 IC, ACT512, SOT23-6 Active-Semi C1 Capacitor, Electrolytic, 10µF/400V, 10 14mm KSC C2 Capacitor, Electrolytic, 10µF/400V, 10 14mm POE C3 Capacitor, Solid, 470µF/16V, 8 11mm Rubcon C4 Capacitor, Electrolytic,6.8µF/35V, SMD 0805 POE C5 Capacitor, Ceramic, 100PF/50V,0603,SMD POE C6 Capacitor, Ceramic,1000pF/50V,0603,SMD POE C7 Capacitor, Solid, 470µF/16V, 8 11mm Rubcon C0 Capacitor, Ceramic,100nF/100V,0603,SMD POE C13 Capacitor, Ceramic,1000pF/500V,0805,SMD POE BD MB6S 1.5A/400V Good-Ark D1,D2 RS1M SMD Good-Ark D3 Diode, Schottky, 60V/30A, SBR3060, DO-220 Diodes Build up Terminal Winding Start Finish Turn s Type Size*QT Y La yer Thick/ Wide Layer P1 2 F 32 W 0.18Φ*1 1 SH1 3 NC 15 W 0.12Φ*3 1 W S1 B A 7 W 0.45Φ*2 1 P2 4 3 17 W 0.15Φ*2 1 P3 F 1 32 W 0.18Φ*1 1 Wire Note:1,Core and Bobbin:RM6 2,SH1 is shielding; P1,P2 & P3 are primary and S1 is secondary 3,Reverse the direction of bobbin when do the S1 Insulation Dgate Diode L4148 SMD Good-Ark L1 Axial Inductor, 1.5mH, 5*7, DIP SoKa Q1 Mosfet Transisor, 04N65, TO-220 Infineon Item Electrical specifications Description Condition Limits PCB1 PCB, L*W*T =38x38x1mm, Cem-1, Rev:A Jintong F1 Fusible, 1A/250V TY-OHM R1 Chip Resistor,1M Ω, SMD 1206, 5% TY-OHM R2 Chip Resistor,1M Ω, SMD 1206, 5% TY-OHM 1 Electrical Strength 2 P1 Inductance 3 P1 Leakage Inductance 50Hz, 1 minute, from primary and secondary Inductance between pins 2and 1at 1Vac & 1kHz Inductance between pins 3 with pins4and A- B shorted 3000 Vac 1.1mH± % 7 75µH R3 Chip Resistor, 4.7Ω, 0805, 5% TY-OHM R3B Chip Resistor, 22Ω, 0805, 5% TY-OHM R4 Chip Resistor,60.4kΩ, 0603, 1% TY-OHM R5 Chip Resistor,11kΩ, 0603, 1% TY-OHM Typical Performance Characteristics Standby Power Vs Input Voltage R6 Chip Resistor, 10 Ω, 0603, 5% TY-OHM R7 Chip Resistor, 200Ω,0603, 5% TY-OHM R8 Chip Resistor, 1KΩ, 0603, 5% TY-OHM R0 Chip Resistor, 3kΩ, 0603, 5% TY-OHM R9 Chip Resistor, 1.37Ω, 1206, 1% TY-OHM R10 Chip Resistor, 5.36kΩ, 0603, 1% TY-OHM R11 Chip Resistor, 5.31kΩ, 0603, 1% TY-OHM R12 Chip Resistor, 100Ω, 0805,5% TY-OHM R13 Chip Resistor,750kΩ, 0805,5% TY-OHM R14 Chip Resistor,360Ω, 0603, 5% TY-OHM Standy Power (mw) 120 100 80 60 40 20 0 90 115 230 264 Input Voltage (VAC) STANDBY POWER Vs Po L1 RM6 Lm=1.1mH CY1 Y capacitance, 1000pF/400V,Y1 SEC IC3 Opto-coupler, PC817C CTR=200 SMD Sharp IC2 Voltage Regulator, TL431A, Vref=2.5V TO-92 ST 90.00% 80.00% 115V 70.00% 230V 60.00% 50.00% 25% Po 50% Po 75% Po 100% Po Output Power EFFICIENCY(20AWG,1.8M,R=0.13Ω) EVALUATION KITS ACT512_5V2.4A_DOE_Rev1.0-14-
ACT512 5V/4A UNIVERSAL ADAPTOR FOR DOE STANDARD Average Input Voltage Device Standby Power Key Features Optimized CCM and advanced Quasi-Resonant operation. Advanced burst mode operation enables low standby power of 100mW. Frequency jetting and Quasi-Resonant technology to decrease EMI. Patented frequency foldback and ActiveQR TM technology increases the average system efficiency compared to conventional solutions and exceeds the latest DOE efficiency standard with good margin. Integrated patented line compensation, provide OCP/OLP protection. Built-in Soft-Start and Fast-Start circuit to decrease main external mosfet stress, output voltage rise time and output voltage overshoot. Integrate comprehensive protection. In case of Schematic Output Voltage over temperature, over/under voltage, short winding, short current sense resistor, open loop and overload protection. Tiny SOT23-6 package. Demo Board Picture Output Power 90-264VAC ACT512 85.30% 92mW 5V 20W Mini size W*L*H=43mm*51.5mm*25mm Topology CCM,QR Flyback, Synchronous Rectification Picture 7-15-
Bill of Materials Transformer REF DESCRIPTION MFTR IC1 IC, ACT512, SOT23-6 Active-Semi C1 Capacitor, Electrolytic, 47µF/400V, 18 20mm KSC 1 7 8 P3 P1 NC S1 A B C3 Capacitor, Ceramic,1000pF/1KV,DIP POE 9 C4 Capacitor, Electrolytic,4.7µF/50V,5*11mm KSC P2 C5 Capacitor, Electrolytic,1500uF/16V, 10*16mm POE 12 C6 Capacitor, Electrolytic,1000uF/16V, 8*16mm POE Build up C8 Capacitor, Ceramic, 0.1µF/50V,0805,SMD POE Terminal Wire Insulation C10 Capacitor, Ceramic,1000pF/100V,0805,SMD POE Cfb Capacitor, Ceramic,100pF/50V,0805,SMD POE BD1 GBL10 2A600V DIP Good-Ark D5 Diode, Ultra Fast, FR107,1000V/1.0A, DO-41 Good-Ark D6 RS1M SMD Good-Ark Q2 Mosfet Transisor, 30A40V, IPD160N04L,TO-252 infineon Dgate Diode L4148 SMD Good-Ark Winding Start Finish Turn s Type Size*QT Y La yer Thick/ Wide Layer P1 8 7 30 W 0.27Φ*1 1 SH1 12 11 17 W 0.15Φ*3 1 W S1 B A 5 TEX-E 0.55Φ*2 1 P2 9 12 13 W 0.27Φ*2 1 P3 7 1 30 W 0.27Φ*1 1 Note:1,Core and Bobbin:RM8 2,SH1 is shielding; P1,P2 & P3 are primary and S1 is secondary 3,Reverse the direction of bobbin when do the S1 LF1 CM Inductor, 20mH, UU9.8 SoKa Q1 Mosfet Transisor, 4N65, 4A650V,TO-220 AUK PCB1 PCB, L*W*T =51x43x1.6mm, Cem-1, Rev:A Jintong Item Electrical specifications Description Condition Limits F1 Fusible, 2A/250V TY-OHM R1 Chip Resistor,22 Ω, SMD 0805, 5% TY-OHM R2 metal Resistor,100K Ω,DIP,1W,5% TY-OHM R3 Chip Resistor, 100Ω, 1206, 5% TY-OHM R4 Chip Resistor,4.7Ω, 0805, 5% TY-OHM R5 Chip Resistor,54.9kΩ, 0805, 1% TY-OHM R6 Chip Resistor, 9.1KΩ, 0805, 1% TY-OHM 1 Electrical Strength 50Hz, 1 minute, from primary and secondary 3000 Vac 2 P1 Inductance Inductance between pins 8 and 1 at 1Vac & 1kHz 1.2mH± % 7 3 P1 Leakage Inductance Inductance between pins 8 and 1 with pins9-12and A -B 75µH Typical Performance Characteristics Standby Power Vs Input Voltage R7,R8 Chip Resistor, 1MΩ, 5% TY-OHM R9,R9B Chip Resistor, 2Ω, 1206, 1% TY-OHM R10 Chip Resistor, 510Ω, 0805, 5% TY-OHM R12 Chip Resistor, 1.2KΩ, 0805, 5% TY-OHM R13 Chip Resistor, 3Ω, 0805, 5% TY-OHM R14 Chip Resistor,1.3KΩ, 0805,5% TY-OHM Standy Power (mw) 150 100 50 0 90 115 230 264 Input Voltage (VAC) R15 Chip Resistor,11.3kΩ, 0805,1% TY-OHM R16 Chip Resistor,10.5KΩ, 0805, 1% TY-OHM R17 Chip Resistor,270KΩ, 0805, 1% TY-OHM R18 Chip Resistor,13KΩ, 0805, 1% TY-OHM R19 Chip Resistor,9.1KΩ, 0805, 1% TY-OHM R20 Chip Resistor,17.8KΩ, 0805, 1% TY-OHM R21 Chip Resistor,10Ω, 0805, 5% TY-OHM Rgate Chip Resistor,300Ω, 0805, 5% TY-OHM T1 RM8 lm=1.2mh CX1 X capacitance,0.22µf/400v,x1,l*w*h=17.5*5.6*12mm NTC Thermistor, SC053 TY-OHM TVS Varistor, 10471 TY-OHM CY1 Y capacitance, 1000pF/400V,Y1 SEC IC3 Opto-coupler, PC817C CTR=200 SM Sharp IC2 Voltage Regulator, TL431A, Vref=2.5V TO-92 ST STANDBY POWER Vs Po 90.00% 88.00% 86.00% 115V 84.00% 230V 82.00% 80.00% 25% Po 50% Po 75% Po 100% Po Output Power EFFICIENCY(16AWG,1M,R=0.043Ω) EVALUATION KITS ACT512_5V4A_DOE_Rev1.0-16-
ACT334 12V/0.5A UNIVERSAL CHARGER FOR DOE STANDARD Input Voltage Device Average Standby Power Output Voltage Output Power Topology 90-264VAC ACT334 80.50% 66mW 12V 6W PSR flyback Key Features Patented Primary Side Regulation Technology Lowest total cost solution for cell phone charger using PWM IC Universal input voltage range from 85 to 264 VAC Accurate CV (5%) and CC (10%) performance Adjustable up to 80kHz Switching Frequency Integrated Output Cord Compensation CV & CC correction for Input line, output DC cord and transformer inductance variation No-load standby power < 0.05W Exceed the latest DOE average efficiency requirement No Y capacitor for EMI filter Short circuit and over-voltage protection Tiny SOT23-6 package. Demo Board Picture Normal size W*L*H=29mm*48.5mm*16mm Schematic Picture 8-17-
Bill of Materials REF DESCRIPTION MFTR U1 IC, ACT334,SOT23-6 Active-Semi. C1 Capacitor, Electrolytic, 6.8uF/400V, 10x12mm KSC C2 Capacitor, Electrolytic, 6.8uF/400V, 10x12mm KSC C3 Capacitor, Ceramic, 1000pF/500V,1206,SMD POE C4 Capacitor, Electrolytic,4.7uF/35V,5x11mm KSC C5 Capacitor, Solid, 470uF/16V, 8x12mm Rubcon C6 Capacitor, Electrolytic, 100uF/16V, 8x12mm KSC C9 Capacitor, Ceramic,1000pF/50V, 0805, SMD POE D1-D4 Diode,Rectifier,1000V/1A,1N4007, DO-41 Good-Ark D5,D6 Diode,Ultra Fast, FR107,1000V/1.0A, DO-41 Good-Ark D8 Diode, schottky, 100V/5A, SL540, DO-214AB,SMD Vishay L1 Axial Inductor, 1.5mH, 0410,Dip Amode Tech Windi ng P1 Build up Note:1,Core and Bobbin:EE16 2,SH1 and SH2 are shielding; P1 & P2 are primary and S1 is secondary 3,Reverse the direction of bobbin when do the S1. Terminal Wire Sta rt Finish Turn s Type Size*QTY 2 --> <-- <-- --> 1 SH1 4 NC 8 S1 6 8 16 P2 SH2 (5) 4 3 (5) Electrical specifications 34 W 0.2Φ*1 1 34 W 0.2Φ*1 1 34 W 0.2Φ*1 1 10 Cor e 1 1 W 0.15Φ*4 1 TEX- E 0.3Φ*1 1 W W 0.25Φ*2 1 0.15Φ*1 1 Laye r Insulation Thick/ Wide Item Description Condition Limits Lay er 5W 1 5W 1 5 5 5 5W 5W 2 2 Q1 Transistor, HFE 20-25, NPN,13003,TO-126 Huawei 1 Electrical Strength 50Hz, 1 minute, from primary and secondary 3000 Vac PCB1 PCB, L*W*T=48.5x29x1.6mm,Cem-1,Rev:A Jintong 2 P1 Inductance Inductance between pins 1 and 2 at 1Vac & 1kHz 1.43mH± % 7 FR1 Wire Round Resistor,1W,10 ohm,knp, 5% TY-OHM R1 Chip Resistor, 22 ohm, 0603, 5% TY-OHM R2 Chip Resistor, 750K ohm, 1206, 5% TY-OHM R3 Chip Resistor, 470 ohm, 0805, 5% TY-OHM 3 P1 Leakage Inductance Inductance between pins 1 and 2 with pins 4-3 and 8-6 shorted 75µH Typical Performance Characteristics Standby Power Vs Input Voltage R4 Chip Resistor, 22 ohm, 0805, 5% TY-OHM R5 Chip Resistor, 75K ohm, 0805,1% TY-OHM R6 Chip Resistor, 12.1K ohm, 0805, 1% TY-OHM R7,R8 Chip Resistor, 5.1M ohm, 1206, 5% TY-OHM R9 Chip Resistor, 0.9 ohm, 1206,1% TY-OHM R10 open TY-OHM R11 Chip Resistor, 5.1K ohm, 0805, 5% TY-OHM R13 Chip Resistor, 10 ohm, 0805, 5% TY-OHM T1 Transformer, Lp=1.43mH, EE16 Standy Power (mw) 100 80 60 40 20 0 1 2 3 4 Input Voltage (VAC) STANDBY POWER Transformer EFFICIENCY(18AWG,1.8M,R=0.08Ω) EVALUATION KITS ACT334_12V0.5A_DOE_Rev1.0-18-
ACT512 12V/0.5A UNIVERSAL ADAPTOR FOR DOE STANDARD Input Voltage Device Average Standby Power Output Voltage Output Power Topology 90-264VAC ACT512 82.10% 82mW 12V 6W CCM&QR flyback Key Features Optimized CCM and advanced Quasi-Resonant operation. Advanced burst mode operation enables low standby power of 100mW and can lower than 50mW with external circuit. Frequency jetting and Quasi-Resonant technology to decrease EMI. Patented frequency foldback and ActiveQR TM technology increases the average system efficiency compared to conventional solutions and exceeds the latest DOE efficiency standard with good margin. Integrated patented line compensation, provide accurate OCP/OLP protection. Built-in Soft-Start and Fast-Start circuit to decrease main external Mosfet stress, output voltage rise time and output voltage overshoot. Integrate comprehensive protection. In case of Schematic over temperature, over/under voltage, short winding, short current sense resistor, open loop and overload protection. Tiny SOT23-6 package. Demo Board Picture Normal size W*L*H=29mm*53.5mm*20.5mm Picture 9-19-
Bill of Materials Transformer REF DESCRIPTION MFTR IC1 IC, ACT512, SOT23-6 Active-Semi C1 Capacitor, Electrolytic, 6.8uF/400V, 10x12mm KSC C2 Capacitor, Electrolytic, 6.8uF/400V,10x12mm KSC C3 Capacitor, Ceramic, 1000pF/500V, 0805,SMD POE C4 Capacitor, Electrolytic,6.8uF/50V, 5x11mm POE C5 Capacitor, Ceramic,1000PF/100V, 0805,SMD POE Build up C6 Capacitor, Electrolytic, 470uF/16V, 6.3x8mm KSC Terminal Wire Insulation C7 Capacitor, Electrolytic, 470uF/16V, 6.5x15mm KSC C8 Capacitor, Ceramic, 0.1uF/25V, 0805,SMD POE C9 Capacitor, Ceramic, 1000pF/25V, 0805,SMD POE C10 Capacitor, Ceramic, 10uF/35V, 0805,SMD Open POE CY1 Safety Y1,Capacitor,1000pF/400V,Dip UXT BD1 Bridge Rectifier,D1010S,1000V/1.0A,SDIP PANJIT D2 Fast Recovery Rectifier, RS1G,200V/1.0A, RMA PANJIT D3 Diode, Schottky, 100V/10A, SBR10100, TO-220 Diodes D4 Fast Recovery Rectifier, RS1M,1000V/1.0A, RMA PANJIT Dgate Diode,Ultra Fast, L4148, SMD Good-Ark L1 Axial Inductor, 1.5mH, 5*7,Dip SoKa L2 Axial Inductor, 3uH,0.55*5T, 5*7,Dip SoKa Q1 Mosfet Transistor, 2N60,TO-262 Infineon PCB1 PCB, L*W*T=53x29x1.6mm,Cem-1,Rev:A Jintong F1 Fuse,1A/250V TY-OHM R1,R2 Chip Resistor, 1.0Mohm, 1206, 5% TY-OHM 2 P1 Inductance Winding Start Finish Turn s Type Size*QT Y La yer Thick/ Wide Layer P1 2 3 68 W 0.2Φ*1 2 SH1 NC 5 0.9 copper 10mm 1 S1 6 10 26 W 0.4Φ*1 2 P2 4 5 29 W 0.2Φ*1 1 P3 3 1 68 W 0.2Φ*1 2 SH2 core 5 3 wire 0.25Φ*1 1 Note:1,Core and Bobbin:EE16 2,SH1 and SH2 are shielding; P1,P2 & P3 are primary and S1 is secondary 3,Reverse the direction of bobbin when do the S1 Item Description 1 Electrical Strength 3 P1 Leakage Inductance Electrical specifications Condition 50Hz, 1 minute, from primary and secondary Inductance between pins 2and 1at 1Vac & 1kHz Inductance between2-1 with pins6-10 and 4-5 shorted 3000 Vac Limits 2.6mH± % 7 75µH Typical Performance Characteristics Standby Power Vs Input Voltage R3 Carbon Resistor, 750K ohm, 0805, 5% TY-OHM R4 Chip Resistor, 100 ohm, 0805, 5% TY-OHM R5,R9,R15 Chip Resistor, 22 ohm, 0805, 5% TY-OHM R6 Chip Resistor, 60.4K ohm, 0805,1% TY-OHM R7 Chip Resistor, 12.1K ohm, 0805, 1% TY-OHM R8 Chip Resistor, 3.21 ohm,1206, 5% TY-OHM R10 Chip Resistor, 1.5Kohm, 0805,5% TY-OHM R12 Chip Resistor, 3K ohm, 0805, 5% TY-OHM R13 Chip Resistor, 24.3K ohm, 0805, 1% TY-OHM Standy Power (mw) 120 100 80 60 40 20 0 90 115 230 264 Input Voltage (VAC) STANDBY POWER Vs Po R11,R14 Chip Resistor, 6.19K ohm, 0805, 1% TY-OHM R16 Chip Resistor, 10 ohm, 0805, 5% TY-OHM R17 Chip Resistor, 2.2Kohm, 0805, 5% TY-OHM T1 Transformer, Lp=2.6mH, EE16 U2 OPOT PC817C Sharp IC3 TL431 TO-92 ST 90.00% 80.00% 115V 70.00% 230V 60.00% 50.00% 25% Po 50% Po 75% Po 100% Po Output Power EFFICIENCY(24AWG,1.8M,R=0.308Ω) EVALUATION KITS ACT512_12V0.5A_DOE_Rev1.0-20-
ACT411 12V/1A UNIVERSAL ADAPTOR FOR DOE STANDARD Input Voltage Device Average Standby Power Output Voltage Output Power Topology 90-264VAC ACT411 84.10% 90mW 12V 12W PSR flyback Key Features Patented primary switching regulator technology, DCM & Quasi-Resonant PWM Controller Lowest total cost solution for cell phone charger using PWM IC Universal input voltage range from 85 to 264 VAC Accurate CV (5%) and CC (15%) performance Adjustable up to 110kHz Switching Frequency Integrated Output Cord Compensation CV & CC correction for Input line, output DC cord and transformer inductance variation No-load standby power < 0.1W Exceed the latest DOE average efficiency requirement Short circuit and over-voltage protection Tiny SOT23-6 package. Schematic Demo Board Picture Normal size W*L*H=29mm*53.5mm*20.5mm Picture 10-21-
Bill of Materials Build up High Performance AC/DC Switching Power Solutions REF DESCRIPTION MFTR Terminal Wire Insulation U1 IC, ACT411,SOT23-6 Active-Semi. C1 Capacitor, Electrolytic, 10uF/400V, 10x15mm KSC C2 Capacitor, Electrolytic, 15uF/400V, 12x15mm KSC C3 Capacitor, Ceramic, 1000pF/500V, 0805,SMD POE C4 Capacitor, Electrolytic,3.3uF/35V,5x11mm KSC C5,C6 Capacitor, Electrolytic, 470uF/16V, 8x11.5mm KSC C8 Capacitor, Ceramic, 0.1uF/25V, 0805,SMD POE C9 Capacitor, Ceramic, 1000pF/100V, 0805,SMD POE CY1 Safety Y1,Capacitor,1000pF/400V,Dip UXT Windi ng Start Finish Turns P1 2 3 31 SH1 5 NC 15 S1 7 10 P2 4 5 10 P3 3 1 31 SH2 core 5 3 9 Typ e Size*QT Y La yer W 0.25Φ*1 2 W 0.15Φ*3 1 TEX -E 0.70Φ*1 1 W 0.25Φ*3 1 W 0.25Φ*1 1 Cop per wire 0.18Φ*1 1 Thick/ Wide La ye r W D1-D4 Diode,Rectifier,1000V/1A,1N4007, DO-41 Good-Ark D5 D6 Fast Recovery Rectifier, RS1M,1000V/1.0A, RMA Fast Recovery Rectifier,RS1D,200V/1.0A,SMA PANJIT PANJIT Note:1,Core and Bobbin:EE19 2,SH1 and SH2 are shielding; P1 & P2 are primary and S1 is secondary 3,Reverse the direction of bobbin when do the S1. D7 Diode, 1N4148 SMD PANJIT D8 Diode, schottky, 100V/20A, SBR20100CT, TO-220 Diode L1 Axial Inductor, 1.5mH, 5*7,Dip SoKa L2 Axial Inductor, 0.55*5T, 5*7,Dip SoKa Electrical specifications Item Description Condition Limits 1 Electrical Strength 50Hz, 1 minute, from primary and secondary 3000 Vac Q1 Mosfet Transistor, 2N65,TO-220 AUK PCB1 PCB, L*W*T=52.2x30x1.6mm,Cem-1,Rev:A Jintong FR1 Fuse,1A/250V TY-OHM 2 P1 Inductance Inductance between pins 2and 1at 1Vac & 1kHz 3 P1 Leakage Inductance Inductance between 4 pins 5 with pins 7-10 shorted 0.50mH± % 7 75µH R2 Carbon Resistor, 200K ohm, 1206, 5% TY-OHM R3 Chip Resistor, 100 ohm, 0805, 5% TY-OHM R4 Chip Resistor, 4.7 ohm, 0805, 5% TY-OHM Typical Performance Characteristics Standby Power Vs Input Voltage R5 Chip Resistor, 91K ohm, 0805,1% TY-OHM R6 Chip Resistor, 15.8K ohm, 0805, 1% TY-OHM R7,R8 Chip Resistor, 2M ohm, 0805, 5% TY-OHM R9 Chip Resistor, 1.24ohm, 1206,1% TY-OHM R10 Chip Resistor, 200 ohm, 0805, 5% TY-OHM R11 Chip Resistor, 9.1K ohm, 0805, 5% TY-OHM R12 Chip Resistor, 3K ohm, 0805, 5% TY-OHM R1,R13 Chip Resistor, 22 ohm, 0805, 5% TY-OHM R14 Chip Resistor, 510 ohm, 0805, 5% TY-OHM T1 Transformer, Lp=0.5mH, EE19 horizontal Transformer Standy Power mw) 100 80 60 40 20 0 90 115 230 264 88.00% 86.00% 84.00% 82.00% 80.00% 78.00% 76.00% 74.00% 72.00% 70.00% 68.00% Input Voltage (VAC) STANDBY POWER Vs Po 25% Po 50% Po 75% Po 100% Po Output Power EFFICIENCY ( 22AWG 1.5M ) 115V 230V EVALUATION KITS ACT411_12V1A_DOE_Rev1.0-22-
ACT512 12V/1A UNIVERSAL ADAPTOR FOR DOE STANDARD Input Voltage Device Average Standby Power Output Voltage Output Power Topology 90-264VAC ACT512 84.60% 88mW 12V 12W CCM&QR flyback Key Features Optimized CCM and advanced Quasi-Resonant operation. Advanced burst mode operation enables low standby power of 100mW and can lower than 50mW with external circuit. Frequency jetting and Quasi-Resonant technology to decrease EMI. Patented frequency foldback and ActiveQR TM technology increases the average system efficiency compared to conventional solutions and exceeds the latest DOE efficiency standard with good margin. Integrated patented line compensation, provide accurate OCP/OLP protection. Built-in Soft-Start and Fast-Start circuit to decrease main external Mosfet stress, output voltage rise time and output voltage overshoot. Integrate comprehensive protection. In case of over temperature, over/under voltage, short winding, short current sense resistor, open loop and overload protection. Tiny SOT23-6 package. Demo Board Picture Normal size W*L*H=41.5mm*57.5mm*25mm Schematic Picture 11-23-
Bill of Materials Transformer REF DESCRIPTION MFTR IC1 IC, ACT512, SOT23-6 Active-Semi C1 Capacitor, Electrolytic, 22µF/400V, 18 20mm KSC C3 Capacitor, Ceramic,1000pF/1KV,DIP POE C4 Capacitor, Electrolytic,4.7µF/35V,5*11mm KSC C5 Capacitor, Solid, 470uF/16V, 10*16mm Rubcon C6 Capacitor, Electrolytic,330uF/16V, 8*16mm KSC C8 Capacitor, Ceramic, 0.1µF/50V,0805,SMD POE C9 Capacitor, Ceramic,1000pF/100V,0805,SMD POE Cfb Capacitor, Ceramic,100pF/50V,0805,SMD POE BD1 GBL10 2A/600V 4Pin DIP Good-Ark D5 Diode, Ultra Fast, FR107,1000V/1.0A, DO-41 Good-Ark D6 RS1M SMD Good-Ark D8 Diode, Schottky, 100V/30A, SBR30100, DO-220 Diodes Dgate Diode L4148 SMD Good-Ark L1 CM Inductor, 30mH, UU9.8 SoKa Q1 Mosfet Transisor, 04N65, TO-220 Infineon PCB1 PCB, L*W*T =58x42x1.6mm, Cem-1, Rev:A Jintong F1 Fusible, 2A/250V TY-OHM R1 Chip Resistor,22 Ω, SMD 0805, 5% TY-OHM R2 metal Resistor,100K Ω,DIP,1W,5% TY-OHM R3 Chip Resistor, 100Ω, 0805, 5% TY-OHM R4 Chip Resistor,4.7Ω, 0805, 5% TY-OHM R5 Chip Resistor,57.6kΩ, 0805, 1% TY-OHM R6 Chip Resistor, 10.7KΩ, 0805, 1% TY-OHM R7,R8 Chip Resistor, 1MΩ, 5% TY-OHM R9 metal Resistor, 1.82Ω, 1W, 1% TY-OHM R10 Chip Resistor, 510Ω, 1/4W, 5% TY-OHM R12 Chip Resistor, 3.3KΩ, 0805, 5% TY-OHM R13 Chip Resistor, 10Ω, 0805, 5% TY-OHM R14 Chip Resistor,3.3KΩ, 0805,5% TY-OHM R15 Chip Resistor,24.3kΩ, 0805,1% TY-OHM R16 Chip Resistor,6.19KΩ, 0805, 1% TY-OHM Rgate Chip Resistor,170Ω, 0805, 5% TY-OHM T1 EE22 lm=2.4mh CX1 X capacitance, 0.1µF/400V,X1 SEC NTC Thermistor, SC053 TY-OHM TVS Varistor, 10471 TY-OHM CY1 Y capacitance, 1000pF/400V,Y1 SEC IC2 Opto-coupler, PC817C CTR=200 dip-4 Sharp IC3 Voltage Regulator, TL431A, Vref=2.5V TO-92 ST Item Description 1 Electrical Strength Build up Note:1,Core and Bobbin:EE22 2,SH1 and SH2 are shielding; P1,P2 & P3 are primary and S1 is secondary 3,Reverse the direction of bobbin when do the S1 Terminal 2 P1 Inductance Winding Start Finish Turn s Type Size*QT Y La yer Thick/ Wide Layer P1 1 4 48 W 0.15Φ*1 2 SH1 NC 2 0.9 copper 10mm 1 W S1 B A 15 TEX-E 0.65Φ*1 1 P2 5 2 16 W 0.15Φ*2 1 P3 4 3 48 W 0.15Φ*1 1 SH2 core 2 3 wire 0.25Φ*1 1 3 P1 Leakage Inductance Electrical specifications Condition Wire 50Hz, 1 minute, from primary and secondary Inductance between pins 1and 3 at 1Vac & 1kHz Inductance between pins 1 and 3 with pins5-2 and A-B shorted 3000 Vac Limits 2.4mH± % 7 75µH Typical Performance Characteristics Standy Power (mw) 100 50 Standby Power Vs Input Voltage 0 90 115 230 264 Input Voltage (VAC) STANDBY POWER Vs Po Insulation 90.00% 85.00% 80.00% 75.00% 115V 230V 70.00% 25% Po 50% Po 75% Po 100% Po Output Power EFFICIENCY(24AWG,1.8M,R=0.308Ω) EVALUATION KITS ACT512_12V1A_DOE_Rev1.0-24-
ACT513 12V2A UNIVERSAL ADAPTOR FOR DOE STANDARD Input Voltage Device Average Standby Power Output Voltage Output Power Topology 90-264VAC ACT513 88.22% 94mW 12V 24W CCM&QR flyback Key Features Optimized CCM and advanced Quasi-Resonant operation. Advanced burst mode operation enables low standby power of 100mW and can lower than 50mW with external circuit. Frequency jetting and Quasi-Resonant technology to decrease EMI. Patented frequency foldback and ActiveQR TM technology increases the average system efficiency compared to conventional solutions and exceeds the latest DOE efficiency standard with good margin. Integrated patented line compensation, provide accurate OCP/OLP protection. Built-in Soft-Start and Fast-Start circuit to decrease main external mosfet stress, output voltage rise time and output voltage overshoot. Integrate comprehensive protection. In case of over temperature, over/under voltage, short winding, short current sense resistor, open loop and overload protection. Tiny SOT23-6 package. Demo Board Picture Normal size W*L*H=44mm*92mm*29mm Schematic Picture 12-25-
Bill of Materials Transformer REF DESCRIPTION MFTR IC1 IC, ACT513, SOT23-6 Active-Semi C1 Capacitor, Electrolytic,68µF/400V, 18 20mm Rubycon C3 Capacitor, Ceramic,1000pF/1KV,DIP POE C4 Capacitor, Electrolytic,6.8µF/35V,5*11mm KSC C5 Capacitor, Electrolytic,470uF/16V,8*16mm POE C6 Capacitor, Electrolytic470uF/16V, 8*16mm POE C8 Capacitor, Ceramic, 0.1µF/50V,0805,SMD POE C9 Capacitor, Ceramic,1000pF/100V,0805,SMD POE C11 Capacitor, Electrolytic470uF/16V, 8*16mm POE Cfb Capacitor, Ceramic,100pF/50V,0805,SMD POE BD1 GBL10 2A/600V 4Pin DIP Good-Ark D5 RS1M,1000V/1.0A,SMD Good-Ark D6 RS1M,1000V/1A, SMD Good-Ark D8 Diode, Schottky, 60V30A, SBR3060, DO-220 Good-Ark Dgate Diode L4148 SMD Good-Ark LF1 CM Inductor, 50mH, UU10.5 SoKa Build up Terminal Wire Insulation Note:1,Core and Bobbin:ER28 2,SH1 is shielding; P1,P2 & P3 are primary and S1 is secondary 3,Reverse the direction of bobbin when do the S1 LF2 CM Inductor, 3mH, SoKa Q1 Mosfet Transisor, 04N65, TO-220 AUK PCB1 PCB, L*W*T =93x44x1.6mm, Cem-1, Rev:A Jintong F1 Fusible, 2A/250V TY-OHM R1 Chip Resistor,22 Ω, SMD 0805, 5% TY-OHM Item Electrical specifications Winding Start Finish Turns Type Size*QTY La yer Thick/ Wide Layer P1 2 3 61 W 0.2Φ*1 1 SH1 5 1 20 W 0.2Φ*3 1 S1 9,10 11,12 14 W 0.8Φ1 1 P2 4 5 15 W 0.2Φ*4 1 P3 3 6 61 W 0.2Φ*1 1 Description 1 Electrical Strength Condition 50Hz, 1 minute, from primary and secondary 3000 Vac Limits R2 metal Resistor,500K Ω,DIP,1W,5% TY-OHM R3 Chip Resistor, 100Ω, 0805, 5% TY-OHM R4 Chip Resistor,4.7Ω, 0805, 5% TY-OHM R5 Chip Resistor,60.4kΩ, 0805, 1% TY-OHM R6 Chip Resistor,14KΩ, 0805, 1% TY-OHM R7,R8 Chip Resistor, 1MΩ, 5% TY-OHM R9 metal Resistor,1.4Ω, 1W, 1% TY-OHM 2 P1 Inductance Inductance between pins 11and 2at 1Vac & 1kHz 4mH± % 7 3 P1 Leakage Inductance Inductance between pins 11 with pins1and 5-8,3-1 shorted 70µH Typical Performance Characteristics Standby Power Vs Input Voltage R10 Chip Resistor, 1.3KΩ, 5% TY-OHM R12 Chip Resistor, 3.3KΩ, 0805, 5% TY-OHM R13 Chip Resistor, 10Ω, 0805, 5% TY-OHM R14 Chip Resistor,33KΩ, 0805,5% TY-OHM R15 Chip Resistor,24.3kΩ, 0805,1% TY-OHM R16 Chip Resistor,6.19KΩ, 0805, 1% TY-OHM Rgate Chip Resistor,470Ω, 0805, 5% TY-OHM T1 ER28 lm=4mh CX1 X capacitance, 0.1µF/400V,X1 NTC Thermistor, SC053 TY-OHM TVS Varistor, 10471 TY-OHM CY1 Y capacitance, 1000pF/400V,Y1 SEC IC2 Opto-coupler, PC817C CTR=200 dip-4 Sharp IC3 Voltage Regulator, TL431A, Vref=2.5V TO-92 ST Standy Power (mw) 100 50 0 90 115 230 264 Input Voltage (VAC) STANDBY POWER Vs Po 90.00% 85.00% 80.00% 75.00% 115V 230V 70.00% 25% Po 50% Po 75% Po 100% Po Output Power EFFICIENCY(18AWG,1.8M,R=0.08Ω) EVALUATION KITS ACT513_12V2A_DOE_Rev1.0-26-