Ultrafast Soft Recovery Diode, 150 A FRED Pt



Similar documents
High Performance Schottky Rectifier, 3.0 A

Schottky Rectifier, 1.0 A

High Performance Schottky Rectifier, 1.0 A

Schottky Rectifier, 100 A

High Performance Schottky Rectifier, 1 A

Small Signal Fast Switching Diode

Small Signal Fast Switching Diode FEATURES PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS

Schottky Rectifier, 1.0 A

Schottky Rectifier, 1 A

Features Benefits Description TO-247AC (Modified) Absolute Maximum Ratings Parameter Max Units

HEXFRED Ultrafast Soft Recovery Diode, 25 A

Standard Recovery Diodes, (Stud Version), 40 A

Power MOSFET. IRF510PbF SiHF510-E3 IRF510 SiHF510. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

HFA15TB60 HFA15TB60-1

Power MOSFET FEATURES. IRF610PbF SiHF610-E3 IRF610 SiHF610. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 V Gate-Source Voltage V GS ± 20

Power MOSFET FEATURES. IRFZ44PbF SiHFZ44-E3 IRFZ44 SiHFZ44 T C = 25 C

MUR1520 MURB1520 MURB1520-1

8ETH06 8ETH06S 8ETH06-1 8ETH06FP

Power MOSFET FEATURES. IRL540PbF SiHL540-E3 IRL540 SiHL540

Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20

HFA08TB60. Ultrafast, Soft Recovery Diode HEXFRED TM TO-220AC. Bulletin PD rev. A 11/00

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

P6KE6.8A thru P6KE540A. TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor. FEATURES PRIMARY CHARACTERISTICS

Ultrafast Soft Recovery Diode, 60 A FRED Pt

Silicon PIN Photodiode

Aluminum Electrolytic Capacitors Power Eurodin Printed Wiring

Aluminum Electrolytic Capacitors Power Economic Printed Wiring

Silicon PIN Photodiode

Power MOSFET FEATURES. IRF540PbF SiHF540-E3 IRF540 SiHF540. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW

Aluminum Electrolytic Capacitors Axial Miniature, Long-Life

Aluminum Electrolytic Capacitors Radial Miniature, Low Impedance, High Vibration Capability

Power MOSFET FEATURES. IRF9640PbF SiHF9640-E3 IRF9640 SiHF9640

SMD Aluminum Solid Capacitors with Conductive Polymer

Dual Common-Cathode Ultrafast Plastic Rectifier

High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

Silicon PIN Photodiode

Power Resistor Thick Film Technology

1.5KE6.8A thru 1.5KE540A, 1N6267A thru 1N6303A. TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor.

Power MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

Optocoupler, Phototransistor Output, with Base Connection, 300 V BV CEO

50 W Power Resistor, Thick Film Technology, TO-220

Ultrafast, Soft Recovery Diode (N/C)

1 Form A Solid State Relay

Silicon NPN Phototransistor

High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs

Ambient Light Sensor

Electrical Double Layer Energy Storage Capacitors Power and Energy Versions

STPS40L15CW. 2 x 20 Amps SCHOTTKY RECTIFIER. Case Styles. I F(AV) = 40Amp V R = 15V. Bulletin PD rev. B 10/06. Description/ Features

Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20

P-Channel 1.25-W, 1.8-V (G-S) MOSFET

P-Channel 20 V (D-S) MOSFET

SuperTan Extended (STE) Capacitors, Wet Tantalum Capacitors with Hermetic Seal

Power Resistor for Mounting onto a Heatsink Thick Film Technology

Power MOSFET. IRF9520PbF SiHF9520-E3 IRF9520 SiHF9520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS V Gate-Source Voltage V GS ± 20

Ultrabright White LED, Ø 3 mm

Optocoupler, Phototransistor Output, 4 Pin LSOP, Long Creepage Mini-Flat Package

STPS20L15DPbF SCHOTTKY RECTIFIER. Case Styles. I F(AV) = 20Amp V R = 15V. Bulletin PD rev. A 02/07. Major Ratings and Characteristics

Aluminum Capacitors Solid Axial

P-Channel 20-V (D-S) MOSFET

Optocoupler, Phototransistor Output, with Base Connection

Optocoupler, Phototransistor Output, Dual Channel, SOIC-8 Package

Surface Mount Multilayer Ceramic Chip Capacitor Solutions for High Voltage Applications

Reflective Optical Sensor with Transistor Output

Optocoupler, Phototransistor Output, AC Input

Optocoupler, Phototransistor Output, with Base Connection

Knob Potentiometer with Switch

N-Channel 20-V (D-S) 175 C MOSFET

1 Form A Solid State Relay

N-Channel 100 V (D-S) MOSFET

Photovoltaic MOSFET Driver with Integrated Fast Turn-Off, Solid-State Relay

Reflective Optical Sensor with Transistor Output

Knob Potentiometer FEATURES. P16NP P16NM Panel Cutout. Thickness nut 2 mm washer 1.5 mm. Panel sealing ring 12 wrench Thread M10 x

Metal Film Resistors, Pulse Withstanding Protective

10MQ100N SCHOTTKY RECTIFIER. I F(AV) = 2.1Amp V R = 100V. Bulletin PD rev. M 07/04. Major Ratings and Characteristics. Description/ Features

High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs

SMD PTC - Nickel Thin Film Linear Thermistors

STTH1R04-Y. Automotive ultrafast recovery diode. Features. Description

P-Channel 60 V (D-S) MOSFET

Optocoupler, Phototransistor Output, High Reliability, 5300 V RMS, Low Input Current

N-Channel 40-V (D-S) 175 C MOSFET

Automotive P-Channel 60 V (D-S) 175 C MOSFET

30BQ100PbF SCHOTTKY RECTIFIER. 3 Amp. I F(AV) = 3.0Amp V R = 100V. Bulletin PD rev. C 01/07. Major Ratings and Characteristics

5SDD 92Z0401. Housingless Welding Diode. I FAVm = A I FSM = A V TO = V Applications r T = m. Types.

Low Current SMD LED PLCC-2

Metal Film Resistors, Industrial, Flameproof

IR Receiver Module for Light Barrier Systems

1/2" (12.7 mm) Conductive Plastic and Cermet Potentiometer

Thick Film Resistor Networks, Dual-In-Line, Molded DIP

2.5 A Output Current IGBT and MOSFET Driver

Standard 0603 SMD LED

Pulse Proof Thick Film Chip Resistors

Precision Surface Mount Resistors Wirewound or Metal Film Technologies

N-Channel 60-V (D-S), 175 C MOSFET

Power MOSFET FEATURES. IRFSL11N50APbF SiHFSL11N50A-E3. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 500 V Gate-Source Voltage V GS ± 30

Transcription:

Ultrafast Soft Recovery Diode, 50 A FRED Pt PowerTab Cathode Anode FEATURES Ultrafast recovery time 75 C max. operating junction temperature Screw mounting only AEC-Q0 qualified PowerTab package Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 PRODUCT SUMMARY Package PowerTab I F(AV) 50 A V R 400 V V F at I F 0.9 V t rr (typ.) See recovery table T J max. 75 C Diode variation Single die BENEFITS Reduced RFI and EMI Higher frequency operation Reduced snubbing Reduced parts count DESCRIPTION / APPLICATIONS These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Cathode to anode voltage V R 400 V Continuous forward current I F(AV) T C = 04 C 50 Single pulse forward current I FSM T C = 25 C 500 A Maximum repetitive forward current I FRM Square wave, 20 khz 300 Operating junction and storage temperatures T J, T Stg -55 to +75 C ELECTRICAL SPECIFICATIONS ( unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V BR, V R I R = 200 μa 400 - - Forward voltage V F I F = 50 A, T J = 75 C - 0.9. I F = 50 A -.07.3 V I F = 50 A, T J = 25 C - 0.96.7 V R = V R rated - - 50 μa Reverse leakage current I R T J = 50 C, V R = V R rated - - 4 ma Junction capacitance C T V R = 400 V - - pf Series inductance L S Measured lead to lead 5 mm from package body - 3.5 - nh Revision: 6-Jun-5 Document Number: 93995

DYNAMIC RECOVERY CHARACTERISTICS ( unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS - 93 - Reverse recovery time t rr ns T J = 25 C - 72 - T I F = 50 A J = 25 C - - Peak recovery current I RRM V R = 200 V A T J = 25 C di F /dt = 200 A/μs - 20 - - 490 - Reverse recovery charge Q rr nc T J = 25 C - 740 - THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Thermal resistance, R thjc - - 0.35 junction to case K/W Thermal resistance, R thcs Mounting surface, flat, smooth and greased - 0.2 - junction to heatsink Weight Mounting torque - - 5.02 g - 0.8 - oz. Marking device Case style PowerTab 50EBU04H.2 (0) - 2.4 (20) N m (lbf in) Revision: 6-Jun-5 2 Document Number: 93995

I F - Instantaneous Forward Current (A) 0 0 T J =75 C T J =25 C 0.2 0.4 0.6 0.8.2.4.6.8 V FM - Forward Voltage Drop (V) Fig. - Maximum Forward Voltage Drop Characteristics I R - Reverse Current (μa) 0 0 T J =75 C T J =25 C 0. 0.0 0.00 0 200 300 400 V R - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage C T - Junction Capacitance (pf) 0 000 0 0 0 0 V R - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Z thjc - Thermal Impedance ( C/W) 0. D = 0.50 D = 0.20 D = 0.0 D = 0.05 D = 0.02 D = 0.0 Single Pulse (Thermal Resistance) Notes:. Duty factor D = t / t 2 2. Peak T J = P dm x Z thjc + T c 0.0 0.0000 0.000 0.00 0.0 0. t - Rectangular Pulse Duration (s) P DM t t 2 Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics Revision: 6-Jun-5 3 Document Number: 93995

Allowable Case Temperature ( C) 80 60 40 20 80 60 40 Square wave (D = 0.50) Rated V r applied see note () DC 0 50 50 200 250 t rr (ns) 250 200 50 V r = 200 V T J = 25 C I F = 50 A I F = 75 A 50 0 I F(AV) - Average Forward Current (A) di F /dt (A/μs) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 7 - Typical Reverse Recovery Time vs. di F /dt Average Power Loss (W) 300 250 200 RMS Limit 50 D = 0.0 D = 0.02 D = 0.05 D = 0.0 50 D DC = 0.20 D = 0.50 DC 0 0 50 50 200 250 Q rr (nc) 5000 4500 4000 3500 3000 2500 2000 500 0 500 V r = 200 V T J = 25 C I F = 50 A I F = 75 A 0 0 I F(AV) - Average Forward Current (A) di F /dt (A/μs) Fig. 6 - Forward Power Loss Characteristics Fig. 8 - Typical Stored Charge vs. di F /dt Note () Formula used: T C = T J - (Pd + Pd REV ) x R thjc ; Pd = Forward power loss = I F(AV) x V FM at (I F(AV) /D) (see fig. 6); Pd REV = Inverse power loss = V R x I R ( - D); I R at V R = Rated V R Revision: 6-Jun-5 4 Document Number: 93995

(3) t rr 0 I F t a tb (2) I RRM (4) Q rr 0.5 I RRM di (rec)m /dt (5) 0.75 I RRM () di F /dt () di F /dt - rate of change of current through zero crossing (4) Q rr - area under curve defined by t rr and I RRM (2) I RRM - peak reverse recovery current (3) t rr - reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through 0.75 I RRM and 0.50 I RRM extrapolated to zero current. t rr x I Q RRM rr = 2 (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr Fig. 9 - Reverse Recovery Waveform and Definitions ORDERING INFORMATION TABLE Device code VS- 50 E B U 04 H F4 2 3 4 5 6 7 8 - product 2 - Current rating (50 = 50 A) 3 - Single diode 4 - PowerTab 5 - Ultrafast recovery 6 - Voltage rating (04 = 400 V) 7 - H = AEC-Q0 qualified 8 - Environmental digit: F4 = RoHS-compliant and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 25 375 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions Part marking information Application note SPICE model www.vishay.com/doc?95240 www.vishay.com/doc?95467 www.vishay.com/doc?9579 www.vishay.com/doc?95623 Revision: 6-Jun-5 5 Document Number: 93995

Outline Dimensions PowerTab DIMENSIONS in millimeters (inches) 8.54 (0.34) 8.20 (0.32) 4.70 (0.9) 4.50 (0.8) 5.90 (0.62) 5.60 (0.6) 5.60 (0.6) 4.80 (0.58).35 (0.05).20 (0.04) 2.40 (0.48) 2.0 (0.47) Lead Lead 2 8.25 (0.7) 8.00 (0.70) Ø 4.20 (Ø 0.6) Ø 4.00 (Ø 0.5) 27.65 (.08) 27.25 (.07) 39.8 (.56) 39.6 (.55) Ø 4.20 (Ø 0.6) Ø 4.00 (Ø 0.5) 4.95 (0.9) 4.75 (0.8) 5.45 REF. (0.2 REF.) 5.20 (0.20) 4.95 (0.9) Lead assignments 3.09 (0.2) 3.00 (0.) 0.60 (0.02) 0.40 (0.0).30 (0.05).0 (0.04) 2.20 (0.48) 2.00 (0.47) Lead = Cathode Lead 2 = Anode Revision: 08-Jun-5 Document Number: 95240

Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Revision: 3-Jun-6 Document Number: 90