STTH2R06. High efficiency ultrafast diode. Features. Description



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STTH2R6 High efficiency ultrafast diode Features Very low conduction losses Negligible switching losses Low forward and reverse recovery times High junction temperature Description A K The STTH2R6 uses ST Turbo 2 6 V planar Pt doping technology. It is specially suited for switching mode base drive and transistor circuits. Packaged in axial, SMA, SMB and SMC, this device is intended for use in high frequency inverters, free wheeling and polarity protection. DO-41 STTH2R6 SMA STTH2R6A SMB STTH2R6U SMC STTH2R6S Table 1. Symbol Device summary Value I F(AV) V RRM 2 A 6 V T j 175 C V F (typ) 1. V t rr (typ) 35 ns December 29 Doc ID 1757 Rev 4 1/1 www.st.com 1

Characteristics STTH2R6 1 Characteristics Table 2. Absolute ratings (limiting values) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 6 V I F(RMS) Forward rms current 7 A I F(AV) Average forward current δ =.5 I FSM Surge non repetitive forward current DO-41 T L = 7 C SMA T L = 85 C SMB T L = 1 C SMC T L = 115 C DO-41 SMA / SMB / SMC t p = 1ms sinusoidal 2 A T stg Storage temperature range -65 to + 175 C T j Operating junction temperature range -4 to + 175 C Table 3. Thermal resistance Symbol Parameter Maximum Unit 4 3 DO-41 L = 5 mm 35 A R th(j-l) Junction to lead SMA 3 SMB 25 C/W SMC 2 Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit I R (1) Reverse leakage current T j = 25 C - - 2 V R = V RRM T j = 15 C - 12 85 µa V F (2) Forward voltage drop T j = 25 C - - 1.7 I F = 2 A T j = 15 C - 1. 1.25 V 1. Pulse test: t p = 5 ms, δ < 2 % 2. Pulse test: t p = 38 µs, δ < 2 % To evaluate the maximum conduction losses use the following equation: P = 1 x I F(AV) +.125 I F 2 (RMS) 2/1 Doc ID 1757 Rev 4

STTH2R6 Characteristics Table 5. Dynamic electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit t rr Reverse recovery time T j = 25 C I F =.5 A, I rr =.25 A, I R = 1 A I F = 1 A, di F /dt = -5 A/µs V R = 3 V - - 3-35 5 t fr Forward recovery time I F = 2 A, - - 1 ns V FP Forward recovery voltage T j = 25 C di F /dt = 1 A/µs V FR = 1.1 x V Fmax - - 1 V ns Figure 1. Conduction losses versus average forward current Figure 2. Forward voltage drop versus forward current 3. 2.5 P(W) δ =.5 δ =.1 δ =.2 δ =.5 1 9 8 I FM(A) T j=15 C (maximum values) 2. δ = 1 7 6 T j=15 C (typical values) 1.5 5 1..5...5 1. 1.5 2. 2.5 Figure 3. 1..9.8.7.6.5.4.3.2.1. Z th(j-a) /Rth(j-a) SMA/SMB/SMC: S Single pulse I F(AV) (A) δ=tp/t Relative variation of thermal impedance junction to case versus pulse duration CU 2 = 1cm SMC 1.E-2 1.E-1 1.E+ 1.E+1 1.E+2 1.E+3 SMA t (s) p SMB DO-41 T tp 4 3 2 1..25.5.75 1. 1.25 1.5 1.75 2. 2.25 2.5 2.75 3. Figure 4. 9 8 7 6 5 4 3 2 1 I RM(A) V R=4V T j=125 C V FM(V) T j=25 C (maximum values) Peak reverse recovery current versus di F /dt (typical values) I F=.5 x IF(AV) di /dt(a/µs) F I F=2 x IF(AV) 5 1 15 2 25 3 35 4 45 5 Doc ID 1757 Rev 4 3/1

Characteristics STTH2R6 Figure 5. 3 25 2 15 1 5 t (ns) rr Reverse recovery time versus di F /dt (typical values) I F=2 x IF(AV) I F=.5 x IF(AV) di /dt(a/µs) F V R=4V T j=125 C 5 1 15 2 25 3 35 4 45 5 Figure 6. 4 35 3 25 2 15 1 5 Q (nc) rr V R=4V T j=125 C Reverse recovery charges versus di F /dt (typical values) I F=2 x IF(AV) I F=.5 x IF(AV) di /dt(a/µs) F 1 2 3 4 5 Figure 7. Relative variations of dynamic parameters versus junction temperature Figure 8. Transient peak forward voltage versus di F /dt (typical values) 1.2 3 V FP(V) 1. 25 T j=125 C.8 trr 2.6.4 IRM QRR V R=4V Reference: T j=125 C 15 1.2. T ( C) j 25 5 75 1 125 5 di /dt(a/µs) F 5 1 15 2 25 Figure 9. Forward recovery time versus di F /dt (typical values) Figure 1. Junction capacitance versus reverse voltage applied (typical values) 3 25 t (ns) fr V FR=1.1 x VF max. T j=125 C 1 C(pF) F=1MHz V OSC=3mVRMS T j=25 C 2 15 1 1 5 di /dt(a/µs) F 5 1 15 2 25 1 V (V) R 1 1 1 1 4/1 Doc ID 1757 Rev 4

STTH2R6 Characteristics Figure 11. R th(j-a) ( C/W) 12 Thermal resistance junction to ambient versus copper surface under each lead epoxy FR4, e CU = 35 µm Figure 12. 12 R th( C/W) Thermal resistance versus lead length (DO-41) 1 SMA SMB 1 Rth(j-a) 8 8 6 SMB 6 Rth(j-l) 4 4 2 S CU(cm²)..5 1. 1.5 2. 2.5 3. 3.5 4. 4.5 5. 2 L lead(mm) 5 1 15 2 25 Doc ID 1757 Rev 4 5/1

Package information STTH2R6 2 Package information Epoxy meets UL 94, V Band indicates cathode Bending method (DO-41): see Application note AN1471 In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 6. DO-41 (plastic) dimensions Ref. Millimeters Dimensions Inches ØD ØB Min. Max. Min. Max. A 4.7 5.2.16.25 C A C B 2.4 2.71.8.17 C 25.4 1 D.71.86.28.34 Table 7. SMA dimensions E1 Ref. Dimensions Millimeters Inches Min. Max. Min. Max. D A1 1.9 2.45.75.94 A2.5.2.2.8 E b 1.25 1.65.49.65 c.15.4.6.16 A1 D 2.25 2.9.89.114 C L A2 b E 4.8 5.35.189.211 E1 3.95 4.6.156.181 L.75 1.5.3.59 6/1 Doc ID 1757 Rev 4

STTH2R6 Package information Figure 13. Footprint (dimensions in mm) 1.4 2.63 1.4 1.64 5.43 Table 8. SMB dimensions Dimensions E1 Ref. Millimeters Inches Min. Max. Min. Max. D A1 1.9 2.45.75.96 C E L A1 A2 b A2.5.2.2.8 b 1.95 2.2.77.87 c.15.4.6.16 D 3.3 3.95.13.156 E 5.1 5.6.21.22 E1 4.5 4.6.159.181 L.75 1.5.3.59 Figure 14. Footprint (dimensions in mm) 1.62 2.6 1.62 2.18 5.84 Doc ID 1757 Rev 4 7/1

Package information STTH2R6 Table 9. SMC dimensions Dimensions Ref. Millimeters Inches E1 Min. Max. Min. Max. A1 1.9 2.45.75.96 D A2.5.2.2.8 b (1) 2.9 3.2.114.126 E c (1).15.4.6.16 D 5.55 6.25.218.246 A1 E 7.75 8.15.35.321 C E2 L A2 b E1 6.6 7.15.26.281 E2 4.4 4.7.173.185 L.75 1.5.3.59 1. Dimensions b and c apply to plated leads Figure 15. Footprint, dimensions in mm (inches) 1.54 5.11 (.61) (.21) 1.54 (.61) 3.14 (.124) 8.19 (.322) 8/1 Doc ID 1757 Rev 4

STTH2R6 Ordering information 3 Ordering information Table 1. Ordering information Order code Marking Package Weight Base qty Delivery mode STTH2R6 STTH2R6 DO-41.34 g 2 Ammopack STTH2R6RL STTH2R6 DO-41.34 g 5 Tape and reel STTH2R6A R6A SMA.68 g 5 Tape and reel STTH2R6U R6U SMB.11 g 25 Tape and reel STTH2R6S R62 SMC.243 g 25 Tape and reel 4 Revision history Table 11. Document revision history Date Revision Changes 7-Sep-24 1 First issue 1-Jun-25 2 SMC package addition. 3-Sep-29 3 Updated Table 6 package dimensions. 4-Dec-29 4 Updated Table 9 package dimensions. Doc ID 1757 Rev 4 9/1

STTH2R6 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. 29 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 1/1 Doc ID 1757 Rev 4