TSOP5700. IR Receiver for High Data Rate PCM at 455 khz VISHAY. Vishay Semiconductors



Similar documents
IR Receiver Modules for Remote Control Systems

Photo Modules for PCM Remote Control Systems

Preamplifier Circuit for IR Remote Control

Preamplifier Circuit for IR Remote Control

IR Detector for Mid Range Proximity Sensor

Preamplifier Circuit for IR Remote Control

IR Receiver Module for Light Barrier Systems

BPW34. Silicon PIN Photodiode VISHAY. Vishay Semiconductors

IR Receiver Modules for Remote Control Systems

IR Receiver Modules for Remote Control Systems

IR Sensor Module for Reflective Sensor, Light Barrier, and Fast Proximity Applications

IR Receiver Modules for Remote Control Systems

High Intensity SMD LED High Intensity SMD LED

2.7 V to 5.5 V Serial Infrared Transceiver Module Family (SIR, kbit/s)

UV SMD LED PLCC-2 FEATURES APPLICATIONS. at I F (ma) (ma) MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX.

How To Use A Kodak Kodacom 2.5D (Kodak) With A Power Supply (Power Supply) And Power Supply

GaAs/GaAlAs IR Emitting Diodes in ø 5 mm Package

Standard 0603 SMD LED

K817P/ K827PH/ K847PH. Optocoupler with Phototransistor Output. Vishay Semiconductors. Description. Applications. Features.

Low Current SMD LED PLCC-2

Low Current SMD LED PLCC-2

Parameter Test Conditions Symbol Value Unit Junction ambient l=4mm, T L =constant R thja 110 K/W

Dome Lens SMD LED FEATURES APPLICATIONS. WAVELENGTH (nm)

Reflective Optical Sensor with Transistor Output

Optocoupler, Photodarlington Output, Dual Channel, SOIC-8 Package

Optocoupler, Phototransistor Output, with Base Connection

Transmissive Optical Sensor with Phototransistor Output

Zero Voltage Switch with Adjustable Ramp. R 2 (R sync ) 220 k (250 V~) Synchronization. Full wave logic Pulse amplifier. 58 k N

Power SMD LED PLCC-2 Plus

Optocoupler, Phototransistor Output, with Base Connection in SOIC-8 Package

Infrared Remote Control Receiver Module IRM-2638T

Standard SMD LED PLCC-2

TEA1024/ TEA1124. Zero Voltage Switch with Fixed Ramp. Description. Features. Block Diagram

Silicon PIN Photodiode

Standard SMD LED PLCC-2

TFDU6102. Fast Infrared Transceiver Module (FIR, 4 Mbit/s) for 2.7 V to 5.5 V Operation VISHAY. Vishay Semiconductors

Reflective Optical Sensor with Transistor Output

Taping, Labeling, Storage, Packing and Marking

TFBS4650. Infrared Transceiver 9.6 kbit/s to kbit/s (SIR) Vishay Semiconductors

Silicon NPN Phototransistor

3mm Photodiode,T-1 PD204-6C/L3

High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW

Optocoupler, Phototransistor Output, with Base Connection

Optocoupler, Phototransistor Output, 4 Pin LSOP, Long Creepage Mini-Flat Package

ULC Technology: High-performance gate array package using multiple metal layer CMOS technology featuring sub-micron channel lengths (0.

Optocoupler, Phototransistor Output, High Reliability, 5300 V RMS, Low Input Current

Optocoupler, Phototransistor Output, Dual Channel, SOIC-8 Package

0.45mm Height 0402 Package Pure Green Chip LED Technical Data Sheet. Part No.: LL-S160PGC-G5-1B

Optocoupler, Phototransistor Output, with Base Connection

: 5050 White LED PKG. Specification Sheet

rred.com ieverred.com

SLLP G PRODUCT DATASHEET. RoHS Compliant

SURFACE MOUNT LED LAMP STANDARD BRIGHT 0606

Silicon PIN Photodiode

INFRARED REMOTE CONTROL RECEIVER MODULE PL-IRM REV: B / 0

Optocoupler, Phototransistor Output, AC Input

DOMINANT. Opto Technologies Innovating Illumination. InGaN White S-Spice : SSW-SLD DATA SHEET: SpiceLED TM. Features: Applications:

InGaN / Sapphire White Water clear. Parameter Rating Unit

Specification MBT801-S

Silicon PIN Photodiode

Optocoupler, Phototransistor Output, With Base Connection

Ultrabright White LED, Ø 3 mm

High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs

4N25 Phototransistor Optocoupler General Purpose Type

Cree XLamp MX-6 LEDs Data Sheet

Cree XLamp MX-3S LEDs Data Sheet

Harvatek Surface Mount CHIP LED Data Sheet HT-380FCH-ZZZZ

Product family data sheet

EVERLIGHT ELECTRONICS CO., LTD. Technical Data Sheet 0805 Package Chip LED Preliminary

Product Datasheet P MHz RF Powerharvester Receiver

Data Sheet. AEDR-8000 Series Reflective Surface Mount Optical Encoder. Description. Features. Applications

Available in white (2,600 K to 8,300 K CCT) Maximum drive current: 1000 ma. Wide viewing angle: 120. Electrically neutral thermal path

EVERLIGHT ELECTRONICS CO.,LTD.

SPECIFICATION. PART NO. : MT0380-UV-A 5.0mm ROUND LED LAMP. 3Northway Lane North Latham,New York

Data Sheet. HFBR-0600Z Series SERCOS Fiber Optic Transmitters and Receivers

INTEGRATED CIRCUITS DATA SHEET. TDA7000 FM radio circuit. Product specification File under Integrated Circuits, IC01

Infrared Transceiver, 9.6 kbit/s to kbit/s (SIR)

SMS : Surface Mount, 0201 Zero Bias Silicon Schottky Detector Diode

Cree XLamp XP-G LEDs Data Sheet

Data Sheets of AVA Technology SMD Type White LED. Model : T5050. AVA Technology Co.

Silicon NPN Phototransistor

Fiber Optics. Integrated Photo Detector Receiver for Plastic Fiber Plastic Connector Housing SFH551/1-1 SFH551/1-1V

CLA LF: Surface Mount Limiter Diode

HIGH SPEED-10 MBit/s LOGIC GATE OPTOCOUPLERS

Optocoupler, Phototransistor Output, with Base Connection

1W High Power Purple LED Technical Data Sheet. Part No.: LL-HP60MUVA

Data Sheet. AEDR-850x 3 Channel Reflective Incremental Encoders. Description. Features. Applications

TFDU6300. Fast Infrared Transceiver Module (FIR, 4 Mbit/s) for 2.4 V to 3.6 V Operation. Vishay Semiconductors

Cree XLamp XR-E LED. Table of Contents. CLD-DS05 Rev 16B. Product family data sheet

3W RGB High Power LED

Harvatek Surface Mount LED Data Sheet. HT-F195 Series

2.5 A Output Current IGBT and MOSFET Driver

VS-500 Voltage Controlled SAW Oscillator

SPECIFICATION. Topview 5550 SMD LED IWS 505-RB. Product : Topview 5550 SMD LED Part No : IWS-505-RB Customer : Date : Ver.1.0.

Features. Typical Applications G9. ProLight PEA2-3FVE 3W Warm White AC LED Technical Datasheet Version: DS-0042

Cree PLCC6 3 in 1 SMD LED CLY6C-FKC

Silicon PIN Photodiode with Daylight Blocking Filter Version 1.4 BP 104 FS

Power chip resistor size 2512 PRC221 5%; 2% FEATURES Reduced size of final equipment Low assembly costs Higher component and equipment reliability.

Data Sheet, V1.1, May 2008 SMM310. Silicon MEMS Microphone. Small Signal Discretes

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

Transcription:

IR Receiver for High Data Rate PCM at 455 khz Description The is a miniaturized SMD IR receiver for infrared remote control and IR data transmission. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter. The demodulated output signal can directly be decoded by a microprocessor. The main benefit is the operation with high data rates and long distances. Features Photo detector and preamplifier in one package Internal Bandfilter for PCM frequency 1 2 3 4 16797 Internal shielding against electrical field disturbance TTL and CMOS compatibility Output active low Small size package Special Features Data rate 20 kbit/s Supply voltage 2.7-5.5 V Short settling time after power on High envelope duty cycle can be received Enhanced immunity against disturbance from energy saving lamps Taping available for topview and sideview assembly Mechanical Data Pinning: 1 = GND, 2 = NC, 3 = OUT, 4 = V S Block Diagram 16840 10 kω Input AGC Band Pass Demodulator PIN Control Circuit 4 V S 3 OUT 1 GND Application Circuit 16843 Transmitter with TSHFxxxx TSOPxxxx Circuit V S OUT GND R 1 =47Ω C 1 = 4.7 µf R 2 >= 1kΩ µc +V S V O GND R 1 +C 1 recommended to suppress power supply disturbances. R 2 optional for improved pulse forming. 1

Absolute Maximum Ratings T amb = 25 C, unless otherwise specified Parameter Test condition Symbol Value Unit Supply Voltage Pin 4 V S - 0.3 to + 6.0 V Voltage at output to supply Pin 3 V S - V O - 0.3 to V (V S + 0.3) Supply Current Pin 4 I S 5 ma Output Voltage Pin 3 V O - 0.3 to + 6.0 V Output Current Pin 3 I O 15 ma Junction Temperature T j 100 C Storage Temperature Range T stg - 40 to + 85 C Operating Temperature Range T amb - 25 to + 85 C Power Consumption T amb 85 C P tot 50 mw Electrical and Optical Characteristics T amb = 25 C, unless otherwise specified Parameter Test condition Symbol Min Typ. Max Unit Supply Current (Pin 4) Dark ambient I SD 2.0 2.7 ma E v = 40 klx, sunlight I SH 2.3 ma tpo - 15 + 5 + 15 µs Supply Voltage (Pin 4) V S 2.7 5 5.5 V Transmission Distance λ p = 870 nm, d max 15 m IR Diode TSHF5400, I F = 300 ma λ p = 950 nm, d max 9 m IR Diode TSAL6400, I F = 300 ma Threshold Irradiance λ p = 870 nm, E e min 1.5 2.5 mw/m 2 optical test signal of Fig.1 Maximum Irradiance Optical test signal of Fig.1 E e max 30 W/m 2 Output Voltage Low (Pin 3) 1 kω external pull up resistor V QL 100 mv Output Voltage High (Pin 3) No external pull-up resistor, V QH V S - 0.25 V test signal see fig. 1 Bandpass filter quality Q 10 Out-Pulse width tolerance Optical test signal of Fig.1, 2.5 mw/m 2 E e 30 W/m 2 Delay time of output pulse Optical test signal of Fig.1, t don 15 36 µs E e > 2.5 mw/m 2 Receiver start up time Valid data after power on t V 50 µs Falling time Leading edge of output pulse t f 0.4 µs Rise time No external pull up resistor t r 12 µs Directivity 1 kω external pull up resistor t r 1.2 µs Angle of half transmission ϕ 1/2 ± 50 deg distance 2

j Typical Characteristics (T amb = 25 C unless otherwise specified) E e V Q V QH 50% V QL Optical Test Signal (f=455khz, 10 cycles/burst) t pi =22 s t don t po =t pi ı 15 s t po 2.2 s Output Signal of t f > 48.6 s (min. duty cycle) 90% 10% t r t 16563 t tdon, j tpo Jitter of Output Pulse ( s ) 16791 30 N=10 cycles/burst 25 20 Jitter t po 15 10 5 Jitter t don 0 0.1 1.0 1 10.0 100.0 1000.010000.0100000.0 10000 100000 E e Irradiance (mw/m 2 ) Figure 1. Output Function Figure 4. Jitter of Output Pulse Optical Test Signal (IR diode TSHF5400, p 870 nm, I F = 300 ma, f = 455 khz, 10 cycles/burst) V O E e Output Signal of V OH V OL t pi =22 s j tdon jitter of leading edge t don t po j tpo jitter of output pulse width t 16565 t E e min / E e rel Responsitivity 16751 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 300 350 400 450 500 550 600 f Frequency ( khz ) Figure 2. Output Fucntion (mit Jitter) Figure 5. Frequency Dependence of Responsivity t don, t po Output Pulse Length ( s ) 16790 35 Output pulse width t po 30 25 20 15 Delay time t don 10 5 N = 10 cycles/burst 0 0.1 1.0 1 10.0 100.0 1000.010000.0100000.0 10000 100000 E e Irradiance (mw/m 2 ) E e min - Threshold Irradiance ( mw/m ) 2 16558 14 12 10 8 6 4 2 Correlation with ambient light sources: 10W/m 2 1.4klx (Std.illum.A,T= 2855 K) 10W/m 2 ı 8.2klx (Daylight,T ı = 5900K) ı Ambient, λ = 950 nm 0 0.1 1.0 10 100 E - DC Irradiance (W/m 2 ) Figure 3. Output Pulse Diagram (t don, t po ) Figure 6. Sensitivity in Bright Ambient 3

E e min Threshold Irradiance ( mw/m ) 2 16559 3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 Sensitivity in dark ambient 1.0 2 3 4 5 6 V S - Supply Voltage ( V ) Figure 7. Sensitivity vs. Supply Voltage S ( λ ) rel - Relative Spectral Sensitivity 16789 1.2 1.0 0.8 0.6 0.4 0.2 0.0 750 800 850 900 950 1000 10501100 1150 λ - Wavelength ( nm ) Figure 10. Relative Spectral Sensitivity vs. Wavelength 1.1 0 10 20 30 E e min - Relative Sensitivity 1.0 0.9 0.8 0.7 0.6 1.0 0.9 0.8 0.7 40 50 60 70 80 16788 0.5 8 10 12 14 16 18 20 22 24 26 28 N - Burstlength ( carriercycles/burst ) 16801 0.6 0.4 0.2 0 0.2 0.4 0.6 d rel - Relative Transmission Distance Figure 8. Rel. Sensitivity vs. Burstlength Figure 11. Directivity 2.3 I - Supply Current ( ma ) s 2.2 2.1 2.0 1.9 1.8 1.7 1.6 V S =5.5V V S =2.7V 16754 1.5-25 -15-5 5 15 25 35 45 55 65 75 85 T amb - Ambient Temperature ( C ) Figure 9. Supply Current vs. Ambient Temperature 4

Recommendation for Suitable Data Formats The circuit of the is designed in that way that disturbance signals are identified and unwated output pulses due to noise or disturbances are avoided. A bandpass filter, an automatic gain control and an integrator stage is used to suppress such disturbances. The distinguishing marks between data signal and disturbance are carrier frequency, burst length and the envelope duty cycle. The data signal should fulfill the following conditions: The carrier frequency should be close to 455 khz. The burstlength should be at least 22 µs (10 cycles of the carrier signal) and shorter than 500 µs. The separation time between two consecutive bursts should be at least 26 µs. If the data bursts are longer than 500 µs then the envelope duty cycle is limited to 25 % The duty cycle of the carrier signal (455 khz) may be between 50 % (1.1 µs pulses) and 10 % (0.2 µs pulses). The lower duty cycle may help to save battery power. 5

Package Dimensions in mm 16776 6

Taping Version..TT 16584 7

Taping Version..TR 16585 8

Reel Dimensions 16734 9

Leader and Trailer Trailer no devices devices Leader no devices End Start min. 200 min. 400 96 11818 Cover Tape Peel Strength According to DIN EN 60286-3 0.1 to 1.3 N 300 ± 10 mm/min 165-180 peel angle Label Standard bar code labels for finished goods The standard bar code labels are product labels and used for identification of goods. The finished goods are packed in final packing area. The standard packing units are labeled with standard bar code labels before transported as finished goods to warehouses. The labels are on each packing unit and contain Vishay Semiconductor GmbH specific data. 10

Vishay Semiconductor GmbH standard bar code product label (finished goods) Plain Writing Abbreviation Length 18 Item-Description Item-Number Selection-Code LOT-/ Serial-Number Data-Code Plant-Code Quantity Accepted by: Packed by: Mixed Code Indicator Origin INO SEL BATCH COD PTC QTY ACC PCK MIXED CODE xxxxxxx + 8 3 10 3 (YWW) 2 8 Company Logo Long Bar Code Top Type Length Item-Number N 8 Plant-Code Sequence-Number Quantity Total Length N X N 2 3 8 21 Short Bar Code Bottom Type Length Selection Code X 3 Data-Code Batch-Number Filter Total Length N X 3 10 1 17 16942 Dry Packing The reel is packed in an anti-humidity bag to protect the devices from absorbing moisture during transportation and storage. Final Packing The sealed reel is packed into a cardboard box. A secondary cardboard box is used for shipping purposes. Aluminium bag Label Reel 15973 11

Recommended Method of Storage Dry box storage is recommended as soon as the aluminium bag has been opened to prevent moisture absorption. The following conditions should be observed, if dry boxes are not available: Storage temperature 10 C to 30 C Storage humidity 60 % RH max. After more than 72 hours under these conditions moisture content will be too high for reflow soldering. In case of moisture absorption, the devices will recover to the former condition by drying under the following condition: 192 hours at 40 C + 5 C/ -0 C and < 5 % RH (dry air/ nitrogen) or 96 hours at 60 C +5 C and < 5 % RH for all device containers or 24 hours at 125 C +5 C not suitable for reel or tubes. An EIA JEDEC Standard JESD22-A112 Level 4 label is included on all dry bags. 16943 Example of JESD22-A112 Level 4 label ESD Precaution Proper storage and handling procedures should be followed to prevent ESD damage to the devices especially when they are removed from the Antistatic Shielding Bag. Electro-Static Sensitive Devices warning labels are on the packaging. Standard Bar-Code Labels The standard bar-code labels are printed at final packing areas. The labels are on each packing unit and contain specific data. 16962 Operating Instructions Reflow Soldering Reflow soldering must be done within 48 hours stored under max. 30 C, 80 % RH after opening envelop Recommended soldering paste (composition: SN 63 %, Pb 37 %) Melting temperature 178 C to 192 C Apply solder paste to the specified soldering pads, by using a dispenser or by screen printing. Recommended thickness of metal mask is 0.2 mm for screen printing. The recommended reflow furnace is a combinationtype with upper and lower heaters. Set the furnace temperatures for pre-heating and heating in accordance with the reflow temperature profile as shown below. Excercise extreme care to keep the maximum temperature below 230 C. The following temperature profile means the tempera ture at the device surface. Since temperature difference occurs between the work and the surface of the circuit board depending on the pes of circuit board or reflow furnace, the operating conditions should be verified prior to start of operation. Handling after reflow should be done only after the work surface has been cooled off. Manual Soldering Use the 6/4 solder or the solder containing silver. Use a soldering iron of 25 W or smaller. Adjust the temperature of the soldering iron below 300 C. Finish soldering within three seconds. Handle products only after the temperature is cooled off. Cleaning Perform cleaning after soldering strictly in conformance to the following conditions: Cleaning agent: 2-propanol (isopropyl alcohol). Commercially available grades (industrial use) should be used. 12

Demineralized or distilled water having a resistivity of not less than 500 mω corresponding to a conductivity of 2 ms/m. Temperature and time: 30 seconds under the temperature below 50 C or 3 minutes below 30 C. Ultrasonic cleaning: Below 20 W. Reflow Solder Profile Temperature ( C ) 240 220 200 180 160 140 120 100 80 60 40 20 0 16735 2 C -4 C/s 2 C -4 C/s 120 s - 180 s 0 50 100 150 200 250 300 350 Time ( s ) 90 s max 10 s max. @230 C Manual Soldering Use the 6/4 solder or the solder containing silver. Use a soldering iron of 25 W or smaller. Adjust the temperature of the soldering iron below 300 C. Finish soldering within three seconds. Handle products only after the temperature is cooled off. Cleaning Perform cleaning after soldering strictly in conformance to the following conditions: Cleaning agent: 2-propanol (isopropyl alcohol) Commercially available grades (industrial use) should be used. Demineralized or distilled water having a resistivity of not less than 500 mω corresponding to a conductivity of 2 ms/m. Temperature and time: 30 seconds under the temperature below 50 C or 3 minutes below 30 C. Ultrasonic cleaning: Below 20 W. Reflow Solder Profile Assembly Instructions Reflow Soldering Reflow soldering must be done within 72 hours stored under max. 30 C, 60 % RH after opening envelop Recommended soldering paste (composition: SN 63 %, Pb 37 %) Melting temperature 178 C to 192 C Apply solder paste to the specified soldering pads, by using a dispenser or by screen printing. Recommended thickness of metal mask is 0.2 mm for screen printing. The recommended reflow furnace is a combinationtype with upper and lower heaters. Set the furnace temperatures for pre-heating and heating in accordance with the reflow temperature profile as shown below. Excercise extreme care to keep the maximum temperature below 230 C. The following temperature profile means the tempera ture at the device surface. Since temperature differ ence occurs between the work and the surface of the circuit board depending on the pes of circuit board or reflow furnace, the operating conditions should be verified prior to start of operation. Handling after reflow should be done only after the work surface has been cooled off. Temperature ( C ) 240 220 200 180 160 140 120 100 80 60 40 20 0 2 C - 4 C/s 2 C - 4 C/s 120 s - 180 s 90 s max 10 s max. @ 230 C 0 50 100 150 200 250 300 350 Time ( s ) 16944 13

Taping Version TSOP..TT 14

Taping Version TSOP..TR 15

Reel Dimensions 16

Leader and Trailer Cover Tape Peel Strength According to DIN EN 60286-3 0.1 to 1.3 N 300 ± 10 mm/min 165-180 peel angle Label Standard bar code labels for finished goods The standard bar code labels are product labels and used for identification of goods. The finished goods are packed in final packing area. The standard packing units are labeled with standard bar code labels before transported as finished goods to warehouses. The labels are on each packing unit and contain Vishay Semiconductor GmbH specific data. Dry Packing The reel is packed in an anti-humidity bag to protect the devices from absorbing moisture during transportation and storage. Final Packing The sealed reel is packed into a cardboard box. A secondary cardboard box is used for shipping purposes. 17

Recommended Method of Storage Dry box storage is recommended as soon as the aluminium bag has been opened to prevent moisture absorption. The following conditions should be observed, if dry boxes are not available: Storage temperature 10 C to 30 C Storage humidity 60 % RH max. After more than 72 hours under these conditions moisture content will be too high for reflow soldering. In case of moisture absorption, the devices will recover to the former condition by drying under the following condition: 192 hours at 40 C + 5 C/ -0 C and < 5 % RH (dry air/ nitrogen) or 96 hours at 60 C +5 C and < 5 % RH for all device containers or 24 hours at 125 C +5 C not suitable for reel or tubes. An EIA JEDEC Standard JESD22-A112 Level 4 label is included on all dry bags. Example of JESD22-A112 Level 4 label ESD Precaution Proper storage and handling procedures should be followed to prevent ESD damage to the devices especially when they are removed from the Antistatic Shielding Bag. Electro-Static Sensitive Devices warning labels are on the packaging. Standard Bar-Code Labels The standard bar-code labels are printed at final packing areas. The labels are on each packing unit and contain Vishay Telefunken specific data. 18

Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use products for any unintended or unauthorized application, the buyer shall indemnify against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 19