Signal Conditioning Piezoelectric Sensors



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Application Report SLOA033A - September 2000 Signal Conditioning Piezoelectric Sensors James Karki Mixed Signal Products ABSTRACT Piezoelectric elements are used to construct transducers for a vast number of different applications. Piezoelectric materials generate an electrical charge in response to mechanical movement, or vice versa, produce mechanical movement in response to electrical input. This report discusses the basic concepts of piezoelectric transducers used as sensors and two circuits commonly used for signal conditioning their output. Contents Introduction......................................................................... 2 Theory and Modeling................................................................ 2 3 Signal Conditioning.................................................................. 2 3. Voltage Mode Amplifier............................................................ 3 3.2 Charge Mode Amplifier............................................................ 4 3.3 Signal Conditioning Made Easier................................................... 4 Appendix A.............................................................................. 5 List of Figures Sensor Models......................................................................... 2 2 Voltage Mode Amplifier Circuit............................................................ 3 3 Charge Mode Amplifier Circuit............................................................ 4 Introduction The word piezo comes from the Greek word piezein, meaning to press or squeeze. Piezoelectricity refers to the generation of electricity or of electric polarity in dielectric crystals when subjected to mechanical stress and conversely, the generation of stress in such crystals in response to an applied voltage. In 880, the Curie brothers found that quartz changed its dimensions when subjected to an electrical field and generated electrical charge when pressure was applied. Since that time, researchers have found piezoelectric properties in hundreds of ceramic and plastic materials. Many piezoelectric materials also show electrical effects due to temperature changes and radiation. This report is limited to piezoelectricity. More detailed information on particular sensors can be found by contacting the manufacturer. 2 Theory and Modeling The basic theory behind piezoelectricity is based on the electrical dipole. At the molecular level, the structure of a piezoelectric material is typically an ionic bonded crystal. At rest, the dipoles formed by the positive and negative ions cancel each other due to the symmetry of the crystal structure, and an electric field is not observed. When stressed, the crystal deforms, symmetry is lost, and a net dipole moment is created. This dipole moment forms an electric field across the crystal.

SLOA033A In this manner, the materials generate an electrical charge that is proportional to the pressure applied. If a reciprocating force is applied, an ac voltage is seen across the terminals of the device. Piezoelectric sensors are not suited for static or dc applications because the electrical charge produced decays with time due to the internal impedance of the sensor and the input impedance of the signal conditioning circuits. However, they are well suited for dynamic or ac applications. A piezoelectric sensor is modeled as a charge source with a shunt capacitor and resistor, or as a voltage source with a series capacitor and resistor. These models are shown in Figure along with a typical schematic symbol. The charge produced depends on the piezoelectric constant of the device. The capacitance is determined by the area, the width, and the dielectric constant of the material. As previously mentioned, the resistance accounts for the dissipation of static charge. Charge Model Voltage Model Schematic Symbol + Rp Cp Rp Vp Cp Vq Figure. Sensor Models 3 Signal Conditioning Normal output voltages from piezoelectric sensors can vary from microvolts to hundreds of volts, and signal conditioning circuitry requirements vary substantially. Key items to consider when designing the amplifier are: Frequency of operation Signal amplitude Input impedance Mode of operation The following discussion assumes that the sensor output needs a moderate amount of amplification, and that the desired signal levels are in the 3-V to 5-V range for full scale. Typically, the high impedance of the sensor requires an amplifier with high-input impedance. JFET or CMOS input op amps, like the TLV277, are natural choices. Two circuits are used for signal conditioning. Figure 2 shows a voltage mode amplifier circuit, and Figure 3 shows a charge mode amplifier circuit. Voltage mode amplification is used when the amplifier is very close to the sensor. Charge mode amplification is used when the amplifier is remote to the sensor. 2 Signal Conditioning Piezoelectric Sensors

SLOA033A 3. Voltage Mode Amplifier Sensor Cp Rp Cc Interface Cable Capacitance Rb Vcc = 3V to 5V + TLV277 Vo = (Cp+Cc) x + Rf Rg + Vcc 2 Rg Rf Gain /2 Vcc Cf + Rf Rg f = L 2π(Rp Rb)(Cp Cc) f = H 2πRfCf Frequency Figure 2. Voltage Mode Amplifier Circuit In a voltage mode amplifier, the output depends on the amount of capacitance seen by the sensor. The capacitance associated with the interface cable will affect the output voltage. If the cable is moved or replaced, variations in Cc can cause problems. Resistor Rb provides a dc bias path for the amplifier input stage. Choice of Rf and Cf sets the upper cutoff frequency. The lower cutoff frequency is calculated by: f L 2. Rp Rb.. Cp Cc.. Resistor Rb should be chosen as high as possible and interface cabling reduced to a minimum. For the TLV277 op amp, Rb = 0 MΩ will result in a typical offset of 60 µv over the commercial temperature range. The biasing shown will put the output voltage at /2 Vcc with no input. The output will swing above and below this dc level. Signal Conditioning Piezoelectric Sensors 3

SLOA033A 3.2 Charge Mode Amplifier Rf Cf Sensor Cp Rp Cc Interface Cable Capacitance Ri Vcc _ TLV277 + Vcc = 3V to 5V Vo = + Vcc Cf 2 Gain /2 Vcc Cf f = L f = 2πRfCf H 2πRi(Cp + Cc) Frequency Figure 3. Charge Mode Amplifier Circuit The charge mode amplifier will balance the charge injected into the negative input by charging feedback capacitor Cf. Resistor Rf bleeds the charge off capacitor Cf at a low rate to prevent the amplifier from drifting into saturation. Resistor Rf also provides a dc bias path for the negative input. The value of Rf and Cf set the low cutoff frequency of the amplifier. The action of the amplifier maintains 0 V across its input terminals so that the stray capacitance associated with interface cabling does not present a problem. Resistor Ri provides ESD protection. Resistor Ri and capacitors Cp and Cc combine to produce roll off at higher frequency. The biasing shown will put the output voltage at /2 Vcc with no input. The output will swing around this dc level. 3.3 Signal Conditioning Made Easier Some manufactures have made signal conditioning of their piezoelectric sensors easier by integrating FET buffers into the sensor. Still, proper biasing is important and additional amplification may be desired. Refer to Application Note 3V Accelerometer Featuring TLV2772, literature number SLVA040 (http://www.ti.com/sc/docs/apps/analog/operational_amplifiers.html) for an example. 4 Signal Conditioning Piezoelectric Sensors

Appendix A Circuit Computation With q SLOA033A Computation of node voltages can always be performed based on current or voltage sources and circuit impedance. Calculating circuit voltages based on a charge source may seem difficult at first, but it is actually simple. Computing node voltage in a circuit with a charge source and a capacitor is a simple matter when using the definition of capacitance, C q v.or v q.. But what if you have resistors or C inductors? Operational calculus in the form of the Laplace operator, s, is the cornerstone of circuit analysis. Using the impedance form of Ohm s Law, V = I Z, the technique replaces circuit elements with their s-domain impedance: C, L sl, and R remains R. These are based on the sc relationships: v " idt, v L di, and v ir. In short form: if the relationship is an C dt integral, divide by s, if it is a differential, multiply by s, and if it is neither, do not do anything. Since current is the time differential of charge, i dq dt.or " i dt q., substituting for i in the standard relationships: v q C, v L d2 q d 2 and v R dq. The new s-domain replacements t dt become: C C, L s2 L,, and R sr. In short form, multiply everything by s. If this is too complicated, perform the circuit analysis as if the charge sources were current sources, multiply the answer by s, and change the i to q. The result is the same. For example, using the charge model for the piezoelectric sensor shown in Figure : Substituting sr P for R P and C P for C p, the sensor output voltage is v p q. sr P sr P C P.. Or, assuming the charge source is a current source we find v p i. R P sr P C P.. Then multiplying by s and substituting q for i, gives the same result. Signal Conditioning Piezoelectric Sensors 5

IMPORTANT NOTICE Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgment, including those pertaining to warranty, patent infringement, and limitation of liability. TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with TI s standard warranty. Testing and other quality control techniques are utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. Customers are responsible for their applications using TI components. In order to minimize risks associated with the customer s applications, adequate design and operating safeguards must be provided by the customer to minimize inherent or procedural hazards. TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right of TI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. TI s publication of information regarding any third party s products or services does not constitute TI s approval, warranty or endorsement thereof. Copyright 2000, Texas Instruments Incorporated