Schottky Rectifier, 1 A BQPbF FEATURES SMB Cathode Anode Small foot print, surface mountable Low forward voltage drop High frequency operation Available RoHS* COMPLIANT Guard ring for enhanced ruggedness and long term reliability Lead (Pb)-free ( PbF suffix) Designed and qualified for industrial level PRODUCT SUMMARY I F(AV) V R 1.0 A V DESCRIPTION The BQPbF surface mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I F(AV) Rectangular waveform 1.0 A V RRM V I FSM t p = 5 µs sine 780 A V F 1.0 Apk, = 125 C 0.62 V Range - 55 to 175 C VOLTAGE RATINGS PARAMETER SYMBOL BQPbF UNITS Maximum DC reverse voltage V R Maximum working peak reverse voltage V RWM V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I F(AV) 50 % duty cycle at T L = 152 C, rectangular waveform 1.0 A Maximum peak one cycle 5 µs sine or 3 µs rect. pulse Following any rated 780 I FSM load condition and with A non-repetitive surge current ms sine or 6 ms rect. pulse rated V RRM applied 38 Non-repetitive avalanche energy E AS = 25 C, I AS = 0.5 A, L = 8 mh 1.0 mj Current decaying linearly to zero in 1 µs Repetitive avalanche current I AR 0.5 A Frequency limited by maximum V A = 1.5 x V R typical * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 94114 For technical questions, contact: diodes-tech@vishay.com www.vishay.com Revision: 15-Apr-08 1
BQPbF Schottky Rectifier, 1 A ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum forward voltage drop See fig. 1 Note (1) Pulse width < 300 µs, duty cycle < 2 % V FM (1) 1 A 0.78 = 25 C 2 A 0.89 1 A 0.62 = 125 C 2 A 0.72 Maximum reverse leakage current = 25 C 0.5 I RM See fig. 2 V R = Rated V R = 125 C 1 ma Typical junction capacitance C T V R = 5 V DC, (test signal range khz to 1 MHz) 25 C 42 pf Typical series inductance L S Measured lead to lead 5 mm from package body 2.0 nh Maximum voltage rate of charge dv/dt Rated V R 000 V/µs V THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage temperature range T (1) J, T Stg - 55 to 175 C Maximum thermal resistance, junction to lead R (2) thjl DC operation 36 Maximum thermal resistance, junction to ambient R thja 80 C/W Approximate weight 0. g 0.003 oz. Marking device Case style SMB (similar DO-214AA) V1J Notes dp (1) tot 1 ------------ < ------------- thermal runaway condition for a diode on its own heatsink d R thja (2) Mounted 1" square PCB www.vishay.com For technical questions, contact: diodes-tech@vishay.com Document Number: 94114 2 Revision: 15-Apr-08
Schottky Rectifier, 1 A BQPbF I F - Instantaneous Forward Current (A) 1 = 175 C = 125 C = 25 C I R - Reverse Current (ma) 1 0.1 0.01 0.001 0.0001 = 175 C = 150 C = 125 C = C = 75 C = 50 C = 25 C 0.1 0.2 0.4 0.6 0.8 1.0 V FM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics 0.00001 0 20 40 60 V R - Reverse Voltage (V) 80 Fig. 2 - Typical Peak Reverse Current vs. Reverse Voltage C T - Junction Capacitance (pf) = 25 C 0 20 40 60 V R - Reverse Voltage (V) 80 Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Z thjc - Thermal Impedance ( C/W) 1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 Single pulse. (thermal resistance) 2. Peak = P DM x Z thjc + T C. 0.1 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - Rectangular Pulse Duration (s) P DM Notes: 1. Duty factor D = t 1 /t 2 t 1 t 2 Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics (Per Leg) Document Number: 94114 For technical questions, contact: diodes-tech@vishay.com www.vishay.com Revision: 15-Apr-08 3
BQPbF Schottky Rectifier, 1 A Allowable Lead Temperature ( C) 180 170 160 150 140 130 120 See note (1) DC Square wave (D = 0.50) Rated V R applied D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 1 0 0.4 0.8 1.2 1.6 Average Power Loss (W) 1.0 0.8 0.6 0.4 0.2 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 DC RMS limit 0 0 0.3 0.6 0.9 1.2 1.5 I F(AV) - Average Forward Current (A) I F(AV) - Average Forward Current (A) Fig. 5 - Maximum Average Forward Current vs. Allowable Lead Temperature Fig. 6 - Maximum Average Forward Dissipation vs. Average Forward Current I FSM - Non-Repetitive Surge Current (A 0 At any rated load condition and with rated V RRM applied following surge 0 000 t p - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Peak Surge Forward Current vs. Pulse Duration Note (1) Formula used: T C = - (Pd + Pd REV ) x R thjc ; Pd = Forward power loss = I F(AV) x V FM at (I F(AV) /D) (see fig. 6); Pd REV = Inverse power loss = V R1 x I R (1 - D); I R at V R1 = 80 % rated V R www.vishay.com For technical questions, contact: diodes-tech@vishay.com Document Number: 94114 4 Revision: 15-Apr-08
Schottky Rectifier, 1 A BQPbF ORDERING INFORMATION TABLE Device code B Q TR PbF 1 2 3 4 5 6 1 - Current rating 2 - B = Single lead diode 3 - Q = Schottky Q series 4 - Voltage rating ( = V) 5 - None = Box (0 pieces) TR = Tape and reel (3000 pieces) 6 - None = Standard production PbF = Lead (Pb)-free Dimensions Part marking information Packaging information SPICE model LINKS TO RELATED DOCUMENTS http://www.vishay.com/doc?95017 http://www.vishay.com/doc?95029 http://www.vishay.com/doc?95034 http://www.vishay.com/doc?95276 Document Number: 94114 For technical questions, contact: diodes-tech@vishay.com www.vishay.com Revision: 15-Apr-08 5
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