BIPOLAR ANALOG INTEGRATED CIRCUIT



Similar documents
BIPOLAR ANALOG INTEGRATED CIRCUIT

Old Company Name in Catalogs and Other Documents

DATA SHEET. SiGe LOW NOISE AMPLIFIER FOR GPS/MOBILE COMMUNICATIONS. Part Number Order Number Package Marking Supplying Form

DPDT SWITCH FOR 2.4 GHz AND 6 GHz DUAL-BAND WIRELESS LAN

DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING

SILICON TRANSISTOR 2SC3355

DATA SHEET HIGH ISOLATION VOLTAGE SSOP PHOTOCOUPLER

µpd6379, 6379A, 6379L, 6379AL

V850. Application Note. 32-Bit Single-Chip Microcontrollers AES 128 Encryption/Decryption. Document No. U19668EE1V0AN00 Date Published January 2009

SiGe:C Low Noise High Linearity Amplifier

DATA SHEET. The information in this document is subject to change without notice.

S101D01/S101D02 S201D01/S201D02

CLA LF: Surface Mount Limiter Diode

Connection Cable for LED Driver Board

SMS : Surface Mount, 0201 Zero Bias Silicon Schottky Detector Diode

Old Company Name in Catalogs and Other Documents

Photolink- Fiber Optic Receiver PLR135/T1

SKY LF: GHz Two-Way, 0 Degrees Power Divider

GHz Frequency Multiplier. GaAs Monolithic Microwave IC. Output power (dbm)

DATA SHEET COMPACT AND LIGHTWEIGHT, SMALL MOUNTING SIZE, HIGH BREAKDOWN VOLTAGE

SKY LF: 20 MHz-3.0 GHz High Power SP4T Switch With Decoder

unit : mm With heat sink (see Pd Ta characteristics)

PS25202 EPIC Ultra High Impedance ECG Sensor Advance Information

SKY LF: 0.5 to 6.0 GHz SPDT Switch, 50 Ω Terminated

TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TAR5SB15~TAR5SB50

Symbol Parameters Units Frequency Min. Typ. Max. 850 MHz

LM380 Audio Power Amplifier

S-57M1 Series HIGH-SPEED BIPOLAR HALL EFFECT LATCH. Features. Applications. Package.

SKYA21012: 20 MHz to 6.0 GHz GaAs SPDT Switch

unit:mm 3049A-SIP12H

2SK1056, 2SK1057, 2SK1058

Old Company Name in Catalogs and Other Documents

Features. Symbol JEDEC TO-220AB

40 V, 200 ma NPN switching transistor

OLF500: High CMR, High-Speed Logic Gate Hermetic Surface Mount Optocoupler

LB1836M. Specifications. Monolithic Digital IC Low-Saturation Bidirectional Motor Driver for Low-Voltage Drive. Absolute Maximum Ratings at Ta = 25 C

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

MASW TB. GaAs SPST Switch, Absorptive, Single Supply, DC-4.0 GHz. Features. Pin Configuration 1,2,3,4. Description. Ordering Information

Equivalent Circuit. Operating Characteristics at Ta = 25 C, V CC = ±34V, R L = 8Ω, VG = 40dB, Rg = 600Ω, R L : non-inductive load STK4181V

DATA SHEET SE2425U : 2.4 GHz Bluetooth Power Amplifier IC. Applications. Product Description. Features. Ordering Information

Features. Modulation Frequency (khz) VDD. PLL Clock Synthesizer with Spread Spectrum Circuitry GND

Product Datasheet P MHz RF Powerharvester Receiver

INTEGRATED CIRCUITS DATA SHEET. TDA7000 FM radio circuit. Product specification File under Integrated Circuits, IC01

VCC1,2. H/L Lin. Bias, Enable, Detector Circuits

Broadband covering primary wireless communications bands: Cellular, PCS, LTE, WiMAX

DATA SHEET. TDA1543 Dual 16-bit DAC (economy version) (I 2 S input format) INTEGRATED CIRCUITS

SSM3K335R SSM3K335R. 1. Applications. 2. Features. 3. Packaging and Pin Configuration Rev.3.0. Silicon N-Channel MOS (U-MOS -H)

SN28838 PAL-COLOR SUBCARRIER GENERATOR

LM380 Audio Power Amplifier

S112-XHS. Description. Features. Agency Approvals. Applications. Absolute Maximum Ratings. Schematic Diagram. Ordering Information

LM566C Voltage Controlled Oscillator

LC898300XA. Functions Automatic adjustment to the individual resonance frequency Automatic brake function Initial drive frequency adjustment function

MADP T. Non Magnetic MELF PIN Diode

MM54C150 MM74C Line to 1-Line Multiplexer

CAN bus ESD protection diode

INTEGRATED CIRCUITS DATA SHEET. TDA W BTL mono audio amplifier. Product specification File under Integrated Circuits, IC01

4N25 Phototransistor Optocoupler General Purpose Type

XX1007-QT-EV1. Doubler / GHz. Features. Functional Block Diagram. Description. Pin Configuration. Absolute Maximum Ratings

Optocoupler, Phototransistor Output, Dual Channel, SOIC-8 Package

LM1596 LM1496 Balanced Modulator-Demodulator

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020

TD62783APG,TD62783AFG

NBB-402. RoHS Compliant & Pb-Free Product. Typical Applications

Wide Bandwidth, Fast Settling Difet OPERATIONAL AMPLIFIER

TPN4R712MD TPN4R712MD. 1. Applications. 2. Features. 3. Packaging and Internal Circuit Rev.4.0. Silicon P-Channel MOS (U-MOS )

PQ05RD11 Series/PQ3RD13

NPN wideband silicon germanium RF transistor

PS323. Precision, Single-Supply SPST Analog Switch. Features. Description. Block Diagram, Pin Configuration, and Truth Table. Applications PS323 PS323

1 Form A Solid State Relay

LM138 LM338 5-Amp Adjustable Regulators

Product Specification PE9304

Hardware Documentation. Data Sheet HAL 202. Hall-Effect Sensor. Edition Sept. 18, 2014 DSH000159_002EN

unit:mm 3022A-DIP12F

DG2731/2732/2733. Low Voltage, 0.4 Ω, Dual SPDT Analog Switch. Vishay Siliconix. RoHS COMPLIANT FEATURES

Optocoupler, Phototransistor Output, with Base Connection

LM108 LM208 LM308 Operational Amplifiers

GaAs, phemt, MMIC, 0.25 W Power Amplifier, DC to 40 GHz HMC930A

unit:mm 3006B-DIP

MADR TR. Quad Driver for GaAs FET or PIN Diode Switches and Attenuators. Functional Schematic. Features. Description. Pin Configuration 2

DSC1001. Low-Power Precision CMOS Oscillator 1.8~3.3V. Features. General Description. Benefits. Block Diagram

LM386 Low Voltage Audio Power Amplifier

23-26GHz Reflective SP4T Switch. GaAs Monolithic Microwave IC in SMD leadless package

CLA Series: Silicon Limiter Diode Bondable Chips

LM118/LM218/LM318 Operational Amplifiers

IP4234CZ6. 1. Product profile. Single USB 2.0 ESD protection to IEC level General description. 1.2 Features. 1.

Silicon Planar Zener Diode for Surge Absorption and Stabilizer

VT-802 Temperature Compensated Crystal Oscillator

TSM2N7002K 60V N-Channel MOSFET

LM381 LM381A Low Noise Dual Preamplifier

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323

UA741. General-purpose single operational amplifier. Features. Applications. Description. N DIP8 (plastic package)

S-57P1 S Series FOR AUTOMOTIVE 150 C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH. Features. Applications.

How To Control A Power Supply On A Powerline With A.F.F Amplifier

Data Sheet. HFBR-0600Z Series SERCOS Fiber Optic Transmitters and Receivers

Optocoupler, Phototransistor Output, 4 Pin LSOP, Long Creepage Mini-Flat Package

SC Series: MIS Chip Capacitors

Fiber Optics. Integrated Photo Detector Receiver for Plastic Fiber Plastic Connector Housing SFH551/1-1 SFH551/1-1V

28V, 2A Buck Constant Current Switching Regulator for White LED

Kit 27. 1W TDA7052 POWER AMPLIFIER

Preamplifier Circuit for IR Remote Control

Transcription:

DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT μpc823tu SiGe:C LOW NOISE AMPLIFIER FOR GPS DESCRIPTION The μpc823tu is a silicon germanium carbon (SiGe:C) monolithic integrated circuit designed as low noise amplifier for GPS. This device exhibits low noise figure and high power gain characteristics, so this IC can improve the sensitivity of GPS receiver. In addition, the μpc823tu which is included output matching circuit contributes to reduce external components and system size. The package is 8-pin lead-less minimold suitable for surface mount. This IC is manufactured using our UHS4 (Ultra High Speed Process) SiGe:C bipolar process. FEATURES Low noise : NF =.85 db TYP. @ High gain : GP = 8.5 db TYP. @ Low current consumption : ICC = 6. ma TYP. @ VCC = 3. V Built-in power-saving function High-density surface mounting : 8-pin lead-less minimold package (2. 2..5 mm) Included output matching circuit Included very robust bandgap regulator (Small VCC and TA dependence) Included protection circuits for ESD APPLICATION Low noise amplifier for GPS ORDERING INFORMATION Part Number Order Number Package Marking Supplying Form μpc823tu-e2 μpc823tu-e2-a 8-pin lead-less minimold (Pb-Free) 823 8 mm wide embossed taping Pin 5, 6, 7, 8 indicates pull-out direction of tape Qty 5 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: μpc823tu Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. PU62EJVDS (st edition) Date Published April 26 NS CP(N) Printed in Japan 26

μpc823tu PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM (Top View) Pin No. Pin Name 8 VCC 2 N.C. 2 7 3 GND 4 INPUT 3 6 5 Power Save 4 Bias 5 6 GND 7 OUTPUT 8 VCC ABSOLUTE MAXIMUM RATINGS Parameter Symbol Test Conditions Ratings Unit Supply Voltage VCC TA = 4. V Power-Saving Voltage VPS TA = 4. V Power Dissipation PD TA = +85 C Note 295 mw Operating Ambient Temperature TA 4 to +85 C Storage Temperature Tstg 55 to +5 C Input Power Pin + dbm Note Mounted on double-side copper-clad 5 5.6 mm epoxy glass PWB RECOMMENDED OPERATING RANGE Parameter Symbol MIN. TYP. MAX. Unit Supply Voltage VCC 2.7 3. 3.3 V Operating Ambient Temperature TA 4 +25 +85 C Power Save Turn-on Voltage VPSon 2.2 VCC V Power Save Turn-off Voltage VPSoff.8 V 2 Data Sheet PU62EJVDS

μpc823tu ELECTRICAL CHARACTERISTICS (TA =, VCC = VPS = 3. V,, unless otherwise specified) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Circuit Current ICC No Signal (VPS = 3. V) 4.5 6. 8. ma At Power-Saving Mode (VPS = V) μa Power Gain GP Pin = 35 dbm 6 8.5 2 db Noise Figure NF.85.5 db Input 3rd Order Distortion Intercept Point IIP3 fin = 574 MHz, fin2 = 575 MHz 5 dbm Input Return Loss RLin 8 db Output Return Loss RLout 7 db Isolation ISL 39 db Gain db Compression Input Power Pin ( db) 7 dbm TEST CIRCUIT VCC 8. μf 2 7 OUTPUT pf 3 6 INPUT 4 5 pf 4.7 nh VPS. μf Data Sheet PU62EJVDS 3

μpc823tu TYPICAL CHARACTERISTICS (TA =, unless otherwise specified) Circuit Current ICC (ma) CIRCUIT CURRENT vs. SUPPLY VOLTAGE 9 8 7 TA = +85 C 6 5 4 3 4 C 2 VCC = VPS RF = off 2. 2.5 3. 3.5 4. Supply Voltage VCC (V) Circuit Current ICC (ma) 9 8 7 CIRCUIT CURRENT vs. POWER-SAVING VOLTAGE TA = +85 C 6 5 4 3 4 C 2 VCC = 3 V RF = off.5..5 2. 2.5 3. Power-Saving Voltage VPS (V) POWER GAIN vs. FREQUENCY NOISE FIGURE vs. FREQUENCY 24.6 Power Gain GP (db) 22 2 8 6 +85 C TA = 4 C 4 5 525 55 575 6 Noise Figure NF (db).4.2..8.6.4.2 4 C TA = +85 C 5 525 55 575 6 Frequency fin (MHz) Frequency fin (MHz) POWER GAIN vs. OPERATING AMBIENT TEMPERATURE NOISE FIGURE vs. OPERATING AMBIENT TEMPERATURE 24.6 Power Gain GP (db) 22 2 8 6 4 5 25 25 5 75 Noise Figure NF (db).4.2..8.6.4.2 5 25 25 5 75 Operating Ambient Temperature TA ( C) Operating Ambient Temperature TA ( C) Remark The graphs indicate nominal characteristics. 4 Data Sheet PU62EJVDS

μpc823tu POWER GAIN vs. SUPPLY VOLTAGE NOISE FIGURE vs. SUPPLY VOLTAGE 24.6 Power Gain GP (db) 22 2 8 6 TA = 4 C +85 C VCC = VPS Noise Figure NF (db).4.2..8.6.4.2 TA = +85 C 4 C VCC = VPS 4 2.4 2.6 2.8 3. 3.2 3.4 3.6 2.4 2.6 2.8 3. 3.2 3.4 3.6 Supply Voltage VCC (V) Supply Voltage VCC (V) Output Power Pout (dbm) OUTPUT POWER vs. INPUT POWER TA = 2 Pin (db) = 7.4 dbm 3 5 4 3 2 Input Power Pin (dbm) Output Power Pout (dbm) OUTPUT POWER vs. INPUT POWER TA = 4 C 2 Pin (db) = 9. dbm 3 5 4 3 2 Input Power Pin (dbm) Output Power Pout (dbm) OUTPUT POWER vs. INPUT POWER TA = +85 C 2 Pin (db) = 6.3 dbm 3 5 4 3 2 Input Power Pin (dbm) Output Power Pout (dbm) 3rd Order Intermodulation Distortion IM3 (dbm) OUTPUT POWER, IM3 vs. INPUT POWER +2 fin = 574 MHz Pout fin2 = 575 MHz 2 4 6 8 IM3 IIP3 = 4.5 dbm 4 3 2 Input Power Pin (dbm) Remark The graphs indicate nominal characteristics. Data Sheet PU62EJVDS 5

μpc823tu S-PARAMETERS (TA =, VCC = VPS = 3. V, monitored at connector on board) S FREQUENCY : 575 MHz 34.6 Ω.57 Ω S22 FREQUENCY : 575 MHz 5.6 Ω 28.6 Ω START. MHz STOP 4. MHz START. MHz STOP 4. MHz INPUT RETURN LOSS vs. FREQUENCY OUTPUT RETURN LOSS vs. FREQUENCY Input Return Loss RLin (db) 5 5 2 25 Output Return Loss RLout (db) 5 5 2 25 3 5 5 2 2 5 3 3 5 4 3 5 5 2 2 5 3 3 5 4 Frequency f (MHz) Frequency f (MHz) POWER GAIN vs. FREQUENCY ISOLATION vs. FREQUENCY 3 25 Power Gain GP (db) 2 5 Isolation ISL (db) 2 3 4 5 5 5 5 2 2 5 3 3 5 4 6 5 5 2 2 5 3 3 5 4 Frequency f (MHz) Frequency f (MHz) Remark The graphs indicate nominal characteristics. 6 Data Sheet PU62EJVDS

μpc823tu PACKAGE DIMENSIONS 8-PIN LEAD-LESS MINIMOLD (UNIT: mm) 2.2±.5 2.±..5±.3 (Top View) 2.±. 8 7 6 5 823 2 3 4.25 +..5 (.6) (.6) (.5) (.5) (.35)(.35) (Bottom View) (.65) (.65) (.6) (.3) 5 6 7 8 (.25) (.25) (.75) (.75) 4 3 2 (.35)(.35).4±. (.4).4±..6±.5 Remark ( ) : Reference value Data Sheet PU62EJVDS 7

μpc823tu NOTES ON CORRECT USE () Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground terminals must be connected together with wide ground pattern to decrease impedance difference. (3) The bypass capacitor should be attached to VCC line. (4) Do not supply DC voltage to INPUT pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Soldering Conditions Condition Symbol Infrared Reflow Peak temperature (package surface temperature) : 26 C or below Time at peak temperature : seconds or less Time at temperature of 22 C or higher : 6 seconds or less Preheating time at 2 to 8 C : 2±3 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) :.2%(Wt.) or below Wave Soldering Peak temperature (molten solder temperature) : 26 C or below Time at peak temperature : seconds or less Preheating temperature (package surface temperature) : 2 C or below Maximum number of flow processes : time Maximum chlorine content of rosin flux (% mass) :.2%(Wt.) or below Partial Heating Peak temperature (terminal temperature) : 35 C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) :.2%(Wt.) or below IR26 WS26 HS35 Caution Do not use different soldering methods together (except for partial heating). 8 Data Sheet PU62EJVDS

μpc823tu The information in this document is current as of April, 26. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) () "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 2. - Data Sheet PU62EJVDS 9

μpc823tu For further information, please contact NEC Compound Semiconductor Devices Hong Kong Limited E-mail: contact@ncsd-hk.necel.com Hong Kong Head Office TEL: +852-37-733 FAX: +852-37-739 Taipei Branch Office TEL: +886-2-872-478 FAX: +886-2-2545-3859 Korea Branch Office TEL: +82-2-558-22 FAX: +82-2-558-529 NEC Electronics (Europe) GmbH http://www.eu.necel.com/ TEL: +49-2-653- FAX: +49-2-653-327 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +-48-988-35 FAX: +-48-988-279 Compound Semiconductor Devices Division NEC Electronics Corporation URL: http://www.ncsd.necel.com/ 64