DATA SHEET. J174; J175; J176; J177 P-channel silicon field-effect transistors DISCRETE SEMICONDUCTORS
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1 DISCRETE SEMICONDUCTORS DATA SHEET P-channel silicon field-effect transistors File under Discrete Semiconductors, SC07 April 1995
2 DESCRIPTION Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended for application with analog switches, choppers, commutators etc. A special feature is the interchangeability of the drain and source connections. PINNING handbook, halfpage MAM388 g d s 1 = source 2 = gate 3 = drain Note: Drain and source are interchangeable. Fig.1 Simplified outline and symbol, TO-92. QUICK REFERENCE DATA Drain-source voltage ± V DS max. 30 V Gate-source voltage V GSO max. 30 V Gate current I G max. 50 ma Total power dissipation up to T amb =50 C P tot max. 400 mw J174 J175 J176 J177 Drain current V DS = 15 V; V GS =0 I DSS min. max ma ma Drain-source ON-resistance V DS = 0.1 V; V GS =0 R DS on max Ω April
3 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage ± V DS max. 30 V Gate-source voltage V GSO max. 30 V Gate-drain voltage V GDO max. 30 V Gate current (DC) I G max. 50 ma Total power dissipation up to T amb =50 C P tot max. 400 mw Storage temperature range T stg 65 to +150 C Junction temperature T j max. 150 C THERMAL RESISTANCE From junction to ambient in free air R th j-a = 250 K/W STATIC CHARACTERISTICS T j =25 C unless otherwise specified J174 J175 J176 J177 Gate cut-off current V GS = 20 V; V DS =0 I GSS max na Drain cut-off current V DS = 15 V; V GS = 10 V I DSX max na Drain current min ma V DS = 15 V; V GS = 10 V I DSS max ma Gate-source breakdown voltage I G =1µA; V DS =0 V (BR)GSS min V Gate-source cut-off voltage min V I D = 10 na; V DS = 15 V V GS off max V Drain-source ON-resistance V DS = 0.1 V; V GS =0 R DSon max Ω April
4 DYNAMIC CHARACTERISTICS T j =25 C unless otherwise specified Input capacitance, f = 1 MHz V GS = 10 V; V DS =0V C is typ. 8 pf V GS =V DS =0 C is typ. 30 pf Feedback capacitance, f = 1 MHz V GS = 10 V; V DS =0V C rs typ. 4 pf Switching times (see Fig.2 + 3) J174 J175 J176 J177 Delay time t d typ ns Rise time t r typ ns Turn-on time t on typ ns Storage time t s typ ns Fall time t f typ ns Turn-off time t off typ ns Test conditions: V DD V V GS off V R L Ω V GS on V handbook, halfpage V DD V GSoff 90% 50 Ω INPUT V out 10% R L 10% 10% V in D.U.T OUTPUT 50 Ω t f 90% 90% t r MBK292 t s t d MBK293 Fig.2 Switching times test circuit. Fig.3 Input and output waveforms; t d + t r =t on ; t s +t f =t off. April
5 PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 D 2 e 1 e 3 b 1 L mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b 1 c D d E e e 1 L L 1 (1) mm Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT54 TO-92 SC April
6 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Short-form specification The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April
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Triple single-pole double-throw analog switch
Rev. 12 25 March 2016 Product data sheet 1. General description 2. Features and benefits 3. Applications 4. Ordering information The is a triple single-pole double-throw (SPDT) analog switch, suitable
Power MOSFET FEATURES. IRF610PbF SiHF610-E3 IRF610 SiHF610. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 00 R DS(on) ( ) = 1.5 Q g (Max.) (nc) 8. Q gs (nc) 1.8 Q gd (nc) 4.5 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
Power MOSFET FEATURES. IRL540PbF SiHL540-E3 IRL540 SiHL540
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) = 5.0 V 0.077 Q g (Max.) (nc) 64 Q gs (nc) 9.4 Q gd (nc) 27 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel
SIPMOS Small-Signal-Transistor
SIPMOS Small-Signal-Transistor Features N-channel Depletion mode dv /dt rated Product Summary V DS V R DS(on),max 3.5 Ω I DSS,min.4 A Available with V GS(th) indicator on reel Pb-free lead plating; RoHS
The 74LVC1G11 provides a single 3-input AND gate.
Rev. 8 17 September 2015 Product data sheet 1. General description The provides a single 3-input AND gate. The input can be driven from either 3.3 V or 5 V devices. This feature allows the use of this
Symbol Parameter Value Unit V DS Drain-source Voltage (V GS =0) 50 V V DGR Drain- gate Voltage (R GS =20kΩ) 50 V
BUZ71A N - CHANNEL 50V - 0.1Ω - 13A TO-220 STripFET POWER MOSFET TYPE V DSS R DS(on) I D BUZ71A 50 V < 0.12 Ω 13 A TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT
Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
N-Channel 60-V (D-S), 175 C MOSFET
N-Channel 6-V (D-S), 75 C MOSFET SUP/SUB7N6-4 V (BR)DSS (V) r DS(on) ( ) (A) 6.4 7 a TO-22AB D TO-263 DRAIN connected to TAB G G D S Top View SUP7N6-4 G D S Top View SUB7N6-4 S N-Channel MOSFET Parameter
DATA SHEET. TDA1518BQ 24 W BTL or 2 x 12 watt stereo car radio power amplifier INTEGRATED CIRCUITS
INTEGRATED CIRCUITS DATA SHEET File under Integrated Circuits, IC01 July 1994 GENERAL DESCRIPTION The is an integrated class-b output amplifier in a 13-lead single-in-line (SIL) plastic power package.
BAS16 series. 1. Product profile. High-speed switching diodes. 1.1 General description. 1.2 Features and benefits. 1.
Rev. 6 4 September 04 Product data sheet. Product profile. General description, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table. Product overview Type number Package Configuration
Power MOSFET FEATURES. IRF9640PbF SiHF9640-E3 IRF9640 SiHF9640
Power MOSFET PRODUCT SUMMARY V DS (V) 200 R DS(on) (Ω) = 10 V 0.50 Q g (Max.) (nc) 44 Q gs (nc) 7.1 Q gd (nc) 27 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D
BUZ11. 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET. Features. [ /Title (BUZ1 1) /Subject. (30A, 50V, 0.040 Ohm, N- Channel. Ordering Information
Data Sheet June 1999 File Number 2253.2 [ /Title (BUZ1 1) /Subject (3A, 5V,.4 Ohm, N- Channel Power MOS- FET) /Autho r () /Keywords (Intersil Corporation, N- Channel Power MOS- FET, TO- 22AB ) /Creator
OptiMOS Power-Transistor Product Summary
OptiMOS Power-Transistor Product Summary V DS 55 V R DS(on),max 4) 35 mω Features Dual N-channel Logic Level - Enhancement mode AEC Q11 qualified I D 2 A PG-TDSON-8-4 MSL1 up to 26 C peak reflow 175 C
logic level for RCD/ GFI/ LCCB applications
logic level for RCD/ GFI/ LCCB applications BT68GW GENERL DESCRIPTION QUICK REFERENCE DT Passivated, sensitive gate thyristor in a plastic SYMBOL PRMETER MX. UNIT envelope suitable for surface mounting,
A I DM. W/ C V GS Gate-to-Source Voltage ± 20. Thermal Resistance Symbol Parameter Typ. Max. Units
V DS 2 V V GS Max ± 2 V R DSon) max @V GS = V) 24 m * PD - 9787A HEXFET Power MOSFET R DSon) max @V GS = 4.V) 4 m 6 Micro3 TM SOT-23) Applications) Load System Switch Features and Benefits Features Benefits
DATA SHEET. TDA1543 Dual 16-bit DAC (economy version) (I 2 S input format) INTEGRATED CIRCUITS
INTEGRATED CIRCUITS DATA SHEET File under Integrated Circuits, IC01 February 1991 FEATURES Low distortion 16-bit dynamic range 4 oversampling possible Single 5 V power supply No external components required
logic level for RCD/ GFI/ LCCB applications
logic level for RCD/ GFI/ LCCB applications BT68W series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT thyristors in a plastic envelope
Power MOSFET FEATURES. IRF540PbF SiHF540-E3 IRF540 SiHF540. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.077 Q g (Max.) (nc) 72 Q gs (nc) 11 Q gd (nc) 32 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET
A I DM. W/ C V GS Gate-to-Source Voltage ± 12. Thermal Resistance Symbol Parameter Typ. Max. Units
V DS 2 V V GS Max ±2 V * PD - 973A HEXFET Power MOSFET R DSon) max @V GS = 4.V) 2. m R DSon) max @V GS = 2.V) 27. m 6 Micro3 TM SOT-23) Applications) Load System Switch Features and Benefits Features Benefits
INTEGRATED CIRCUITS DATA SHEET. TDA7000 FM radio circuit. Product specification File under Integrated Circuits, IC01
INTEGRATED CIRCUITS DATA SHEET File under Integrated Circuits, IC01 May 1992 GENERAL DESCRIPTION The is a monolithic integrated circuit for mono FM portable radios, where a minimum on peripheral components
