REV 0 WAFER FABRICATION FLOWCHART CMOS PROCESS
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1 WAFER FABRICATION FLOWCHART INCOMING Vendor: Product: Package: Location of Wafer Fab: Assembly: Final Test: Q.C. Test: Source Accept Test: Quality Contact: Linear Technology Corporation CMOS Products All Package Types Linear Technology Corp., Milpitas, CA./ Camas, WA Linear Technology Corporation, Penang, Malaysia or any approved assembly subcontractor Naib Girn, LTC Milpitas, CA (408) Ext QUALITY AND GATE MANUFACTURING PROCESS QUALITY MONITOR / SURVEILLANCE REWORK /TEST INCOMING RAW MATERIAL WAFERS : SCRATCHES, PITS, HAZE, CRATERS, DIMPLES, CONTAMINATION 1 X 1.0% AQL TO 2.5 AQL LEVEL 1 OXYGEN/CARBON MEUREMENT IVITY / CONDUCTIVITY INFRARED SPECTROMETER MAGNETRON V/I METER S/S=2, S/S=2, DIMENSIONAL CALIPERS 2.5% AQL, LEVEL 1 THICKNESS AND TAPER/BOW DIAL THICKNESS GAGE 2.5% AQL, LEVEL 1 ORIENTATION BREAK TEST S/S=1. EACH BATCH RETICLE, C.D. MEUREMENTS EACH PLATE CHEMICALS GES INITIAL TARGETS OXIDE THICKNESS NANOSPEC 3 WAFERS / CYCLE P-WELL MK MK HF 100X PRE IMT P-WELL IMT IMT DOSE CHECK THERMAWAVE 2 WAFERS/LOT P-WELL DRIVE LINEAR TECHNOY CORPORATION PAGE 1 OF 5
2 /TEST STRIP ALL OXIDE HF OXIDE THICKNESS NANOSPEC 2 WAFERS /LOT PAD NITRIDE NITRIDE NITRIDE THICKNESS NANOSPEC 3 WAFERS/CYCLE ACTIVE MK ETCH DIMENSIONS 400X P FIELD IMT MK MK HF 400X BORON FIELD IMT IMT DOSE CHECK THERMAWAVE 2 WAFERS / LOT 100X N-FIELD IMT MK MK HF UV 100X PHOS FIELD IMT IMT DOSE CHECK THERMAWAVE 2 WAFERS / LOT 100X LOCOS OXIDE PLMA NITRIDE STRIP ETCH (100%) 20X CMOS CAP MK MK HF DIMENSIONS 100X CAP IMT IMT DOSE CHECK THERMAWAVE 2 WAFERS / LOT 100X ETCH PAD OXIDE HF OXIDE THICKNESS NANOSPEC 1 WAFER /CYCLE LINEAR TECHNOY CORPORATION PAGE 2 OF 5
3 /TEST GATE OXIDE P CH OXIDE THICKNESS NONOSPEC 3 WAFERS/CYCLE N CH VTP IMT MK MK HF 100X BORON VT IMT IMT DOSE CHECK THEMAWAVE 2 WAFERS/LOT 100X 100% OF THE WAFERS POLY POLY THICKNESS NANOSPEC 2 WAFERS/CYCLE NODE BACK ETCH MK MK RF PLMA AND HF SINKER PRE 100% <10 DEFECTS PER WAFER RS (OHMS/SQ) 4 POINT PROBE 2 TEST WAFERS PER RUN CMOS GATE MK MK RF PLMA AND HF 100X NODE P+ IMT MK MK 100X P+ S/D IMT IMT DOSE CHECK THERMAWAFE 2 WAFERS/LOT 100X N+ IMT MK MK 100X N+ S/D IMT IMT DOSE CHECK THERMAWAVE 2 WAFERS/LOT 100X LINEAR TECHNOY CORPORATION PAGE 3 OF 5
4 /TEST SOURCE DRAIN REOX P+ N+ LPOE LPOE LPCVD LPOE THICKNESS NANOSPEC 3 WAFERS/CYCLE CMOS GETTER RS (OHMS/SQ) 4 POINT PROBE 2 TEST WAFERS PER RUN CMOS CONTACT MK MK HF UV 100X ALUMINUM SPUTTER MACHINE <5 DEFECTS PER WAFER 100% RS (OHMS/SQ) 4 POINT PROBE 2 TEST CHIP/CYCLE CMOS METAL MK MK METAL ENCHANT BATH FINAL INSPECT DIMENSIONS 2 200X 1000X DIMENSIONS MEURE 2 WAFERS PER RUN LOT, ACCEPT ON 0 FAILURES ALLOY ANNEAL 100% <10 DEFECTS PER WAFER LPOM PSIVATION LPCVD 100%, MORE THAN 2 COLOR CHANGE IS FAIL 10X 3 WAFERS/CYCLE <3 DEFECTS/PER LPOM THICKNESS NANOSPEC 3 WAFERS/CYCLE PHOSPHOROUS CONCENTRATION 10:1 HF ETCH RATE 3 WAFERS/CYCLE LINEAR TECHNOY CORPORATION PAGE 4 OF 5
5 /TEST PEN PECVD NITRIDE 100%, MORE THAN 2 COLOR CHANGE IS FAIL 10X 3 WAFERS/CYCLE <5 DEFECTS/PER PEN THICKNESS NANOSPEC 3 WAFERS/CYCLE INDEX OF REFRACTION ELIPSOMETER 3 WAFERS/CYCLE PAD MK MK RF PLMA ETCH AND HF FINAL INSPECT 100X OF THE WAFER ELECTRICAL TEST LOMAC PARAMETRIC ANALYZER 100% BACKLAP DISCO N/A N/A N/A BACKSIDE GOLD BACKSIDE METALLIZATION UN-AIDED EYE 100% SEM STEP COVERAGE 2 PHOTOS SCANNING ELECTRON CMOS = 1 WAFER PER WEEK GENERAL METAL 1 PHOTO NWELL & PWELL = 1 WAFER EVERY RUN LINEAR TECHNOY CORPORATION PAGE 5 OF 5
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