ADVANTECH DRAM Memory Module Portfolio Introduction. PAPS Product Management Q1 / 2015
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- Brice Wilcox
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1 ADVANTECH DRAM Memory Module Portfolio Introduction PAPS Product Management Q1 / 2015
2 PART I. ADVANTECH QUALIFIED DIMM (AQD)
3 ADVANTECH QUALIFIED DIMM Built to Last --- The toughest memory module for rigorous applications - 3 -
4 SELLING PROPOSITION QUALITY RELIABILITY COMPATIBILITY LONGEVITY LIFE-TIME WARRANTY - 4 -
5 Quality Assurance Rigorous Reliability Tests Cross-Checked Compatibility Longevity Life-Time Warranty - 5 -
6 Quality Assurance Rigorous Reliability Tests Cross-Checked Compatibility Longevity Life-Time Warranty 100% Module On Board Testing Shock & Vibration Test Chamber Test Functional Test - 6 -
7 Quality Assurance Rigorous Reliability Tests Cross-Checked Compatibility Longevity Life-Time Warranty Check & Compare Both Teams Cross Compare Testing Results to Ensure M/B & Memory Compatibility Memory Compatibility Testing Result Motherboard Team DOA Testing Result - 7 -
8 Quality Assurance Rigorous Reliability Tests Cross-Checked Compatibility Longevity Life-Time Warranty Locked BOM - IC Spec - PCB Layout Minimum 3 Years Longevity - 8 -
9 Quality Assurance Rigorous Reliability Tests Cross-Checked Compatibility Longevity Life-Time Warranty Every ADVATECH QUALIFIED DIMM (AQD) is back up by Lifetime Warranty - 9 -
10 Small Things Matter For better durability all AQD DRAM applies IPC-2221,using 30u Golden plated connector to ensure DRAM s stability in any given circumstances. (Est. Running Change Q1 / 2015)
11 AQD Product Portfolio Unbuffered DIMM * General IPC Applications * 1GB, 2GB, 4GB & 8GB ECC Unbuffered DIMM * Improve system productivity and efficiency * 2GB, 4GB & 8GB Registered DIMM * Providing the best solution for capacity and performance requirement. * 4GB, 8 GB & 16GB Load Reduce DIMM * Providing the biggest capacity per server with the lowest energy costs * 32GB
12 Product Roadmap 2015 Q1-12 -
13 AQD Naming Convention A Q D S D 3 L 2 G N V 1 6 S G PRODUCT NAME A=Advantech Q=Qualified D=DIMM TYPE SD2=DDR2 SO-DIMM SD3=DDR3 SO-DIMM SD4= DDR4 SO-DIMM D2=DDR2 D3=DDR3 D4=DDR4 VOLTAGE Blank= 1.5V L=1.35V U=1.2V CAPACITY 1G=1GB 2G=2GB 4G=4GB 8G=8GB 16 =16GB 32 =32GB 64= 64GB ADVNCED FEATURE N= NON-ECC and NON REGISTER R= REGISTER E= ECC ONLY L=Load reduce Height V= VLP SPEED 40=400Mt/s 53=533Mt/s 66=667Mt/s 80=800Mt/s 10=1066Mt/s 13=1333Mt/s 16=1600Mt/s 18=1866Mt/s FAB S=Samsu ng H=Hynix M=Micron /Elpida N=Nanya VERSION X=1Gb(128Mx8) T=1Gb(256Mx4) Q=2Gb(256Mx8) Y=2Gb(512Mx4) G=4Gb(512Mx8) Z= 4Gb(1Gbx4) M=8Gb(2Gbx4) Color / Symbol Key
14 AQD DDR3 Memory Modules Portfolio LONG SHORT LONG SHORT Non-VLP Non-VLP VLP Non-VLP Non-VLP U-DIMM 1GB (128X8) 2GB (256MX8) 4GB (512MX8) AQD-D31GN13-SX AQD-D31GN13-HX AQD-SD31GN13-SX AQD-SD31GN13-HX AQD-D31GN16-HC (NEW) AQD-D3L2GN16-SQ AQD-D3L2GN16-HQ AQD-D3L4GN16-SG AQD-D3L4GN16-HG AQD-D3L4GN16-MG AQD-SD31GN16-HC (NEW) AQD-SD3L2GN16-SQ AQD-SD3L2GN16-HQ AQD-SD3L4GN16-SG AQD-SD3L4GN16-HG AQD-SD3L4GN16-MG 4GB (256MX8) AQD-D3L4GN16-MQ AQD-SD3L4GN16-MQ 8GB (512MX8) AQD-D3L8GN16-SG AQD-D3L8GN16-HG AQD-D3L8GN16-MG AQD-SD3L8GN16-SG AQD-SD3L8GN16-HG AQD-SD3L8GN16-MG 2GB (256MX8) AQD-D3L2GE16-SQ AQD-SD3L2GE16-MQ ECC U- DIMM 4GB (512MX8) AQD-D3L4GE16-SG AQD-SD3L4GE16-SG AQD-SD3L4GE16-MG 8GB (512MX8) AQD-D3L8GE16-SG AQD-SD3L8GE16-SG AQD-SD3L8GE16-MG 4GB (512MX8) AQD-D3L4GR16-SG R-DIMM 8GB (512MX8) AQD-D3L8GR13-SG AQD-D38GRV16-SG AQD-D3L8GRV16-SG AQD-D3L8GR16-SG 16GB (2Gbx4) AQD-D316RV16-SM AQD-D3L16RV16-SM LOAD 32GB REDUCE Advantech (2GbX4) Confidential AQD-D3L32L13-SM
15 2GB U-DIMM ECC U-DIMM R-DIMM Load Reduce DDR2 SO-DIMM AQD-SD21GN80-SX 200PIN, 800Mb/s, 128Mx8, Height, Samsung Chips 1.8V Q2/2015 Q3/2015 Q4/2015
16 1GB 2GB 4GB 8GB U-DIMM ECC U-DIMM R-DIMM Load Reduce DDR3 DIMM AQD-D31GN13-SX 240PIN, 1333Mt/s, 128Mx8, Height, Samsung, 1.5V AQD-D31GN16-HC 240PIN, 1600Mt/s, 128Mx16, Height, Hynix, 1.5V AQD-D3L2GN16-SQ 240PIN, 1600Mt/s, 256Mx8, Height, Samsung Chips 1.35V AQD-D3L2GN16-HQ 240PIN, 1600Mt/s, 256Mx8, Height, Hynix Chips 1.35V AQD-D3L4GN16-SG 240PIN, 1600Mt/s, 512Mx8, Height, Samsung Chips 1.35V AQD-D3L4GN16-HG 240PIN, 1600Mt/s, 512Mx8, Height, Hynix Chips 1.35V AQD-D3L4GN16-MG 240PIN, 1600Mt/s, 512Mx8, Height, Micron Chips 1.35V AQD-D3L4GN16-MQ 240PIN, 1600Mt/s, 256Mx8, Height, Micron Chips 1.35V AQD-D3L8GN16-SG 240PIN, 1600Mt/s, 512Mx8, Height, Samsung Chips 1.35V AQD-D3L8GN16-HG 240PIN, 1600Mt/s, 512Mx8, Height, Hynix Chips 1.35V AQD-D3L8GN16-MG 240PIN, 1600Mt/s, 512Mx8, Height, Micron Chips 1.35V Q2/2015 Q3/2015 Q4/2015
17 1GB 2GB 4GB 8GB U-DIMM ECC U-DIMM R-DIMM Load Reduce DDR3 SO-DIMM AQD-SD31GN13-SX 204PIN, 1333Mt/s, 128Mx8, Height, Samsung Chips 1.5V AQD-SD31GN13-HX 204PIN, 1333Mt/s, 128Mx8, Height, Hynix Chips 1.5V EOL: AQD-SD31GN16-HC 204PIN, 1600Mt/s, 128Mx Height, Hynix Chips 1.5V AQD-SD3L2GN16-SQ 204PIN, 1600Mt/s, 256Mx8, Height, Samsung Chips 1.35V AQD-SD3L2GN16-HQ 204PIN, 1600Mt/s, 256Mx8, Height, Hynix, Chips 1.35V AQD-SD3L4GN16-SG 204PIN, 1600Mt/s, 512Mx8, Height, Samsung Chips 1.35V AQD-SD3L4GN16-HG 204PIN, 1600s, 512Mx8, Height, Hynix Chips 1.35V AQD-SD3L4GN16-MG 204PIN, 1600s, 512Mx8, Height, Micron Chips 1.35V AQD-SD3L4GN16-MQ 204PIN, 1600s, 256Mx8, Height, Micron Chips 1.35V AQD-SD3L8GN16-SG 204PIN, 1600Mt/s, 512Mx8, Height, Samsung, Chips 1.35V AQD-SD3L8GN16-HG 204PIN, 1600Mt/s, 512Mx8, Height, Hynix, Chips 1.35V AQD-SD3L8GN16-MG 204PIN, 1600Mt/s, 512Mx8, Height, Micron, Chips 1.35V Q2/2015 Q3/2015 Q4/2015
18 2GB 4GB 8GB U-DIMM ECC U-DIMM R-DIMM Load Reduce DDR3 DIMM Advanced Feature ECC AQD-D3L2GE16-SQ 240 PIN, 1600Mt/s, 256Mx8,1R Height, Samsung, 1.35V AQD-D3L4GE16-SG 240 PIN, 1600Mt/s, 512 Mx8,1R Height, Samsung, 1.35V AQD-D3L8GE16-SG 240PIN, 1600Mt/s, 512Mx8,2R Height, Samsung, 1.35V Q2/2015 Q3/2015 Q4/2015
19 8GB 4GB 2GB U-DIMM ECC U-DIMM R-DIMM Load Reduce DDR3 SO-DIMM Advanced Feature ECC AQD-SD3L2GE16-MG 240 PIN, 1600Mt/s, 256 Mx8, 1R Height, Micron, 1.35V AQD-SD3L4GE16-SG 240 PIN, 1600Mt/s, 512 Mx8, 1R Height, Samsung, 1.35V AQD-SD3L4GE16-MG 240 PIN, 1600Mt/s, 512 Mx8, 1R Height, Micron, 1.35V AQD-SD3L8GE16-SG 240PIN, 1600Mt/s, 512Mx8, 2R Height, Samsung, 1.35V AQD-SD3L8GE16-MG 240PIN, 1600Mt/s, 512Mx8, 2R Height, Micron, 1.35V Q2/2015 Q3/2015 Q4/2015
20 16GB 8GB 4GB U-DIMM ECC U-DIMM R-DIMM Load Reduce DDR3 DIMM Advanced Feature Registered AQD-D3L4GR16-SG 240PIN, 1600 Mt/s, 512 Mx8 1R, 1.18 Height, Samsung Chips 1.35V AQD-D3L8GR13-SG 240PIN, 1333 Mt/s, 512 Mx8 2R, 1.18 Height, Samsung Chips 1.35V AQD-D3L8GR16-SG 240PIN, 1600 Mt/s, 512 Mx8 2R, 1.18 Height, Samsung Chips 1.35V AQD-D38GRV16-SG 240PIN, 1600 Mt/s, 512 Mx8 2R, 1.18 Height, Samsung Chips 1.35V AQD-D3L8GRV16-SG 240PIN, 1600 Mt/s, 512 Mx8 2R, VLP 0.74 Height, Samsung Chips 1.35V AQD-D316RV16-SM 240PIN, 1600 Mt/s, 2Gx4 2R, 0.74 Height, Samsung, Chips 1.35V AQD-D3L16RV16-SM 240PIN, 1600 Mt/s, 2Gx4 2R, 0.74 Height, Samsung, Chips 1.35V Q2/2015 Q3/2015 Q4/2015
21 32GB U-DIMM ECC U-DIMM R-DIMM Load Reduce DDR3 SO-DIMM Advanced Feature Load Reduce AQD-D3L32L13-SM 240PIN, 1333 Mt/s, 2Gbx4,4R, Height, Samsung, Chips 1.5V Q2/2015 Q3/2015 Q4/2015
22 DDR4 Roadmap DDR4 ECC DIMM (Q2/2015) DDR4 R-DIMM () DDR4 U-DIMM (Q2/2015) DDR4 / DDR2 / DDR3 / DDR1 / SDRAM /
23 16GB 8GB 4GB U-DIMM ECC U-DIMM R-DIMM Load Reduce DDR4 DIMM Advanced Feature Registered AQD-D4U4GR21-HG 288PIN, 2133 Mt/s, 512 Mx8 1R, 1.23 Height, Hynix Chips 1.2V AQD-D4U8GR21-HZ 288PIN, 2133 Mt/s, 1Gbx4 1R, 1.23 Height, Hynix Chips 1.2V AQD-D4U8GR21-SG 288PIN, 2133 Mt/s, 512 Mx8 2R, 1.23 Height, Samsung Chips 1.2V AQD-D4U16R21-HZ 288PIN, 2133 Mt/s, 1Gbx4 2R, 1.23 Height, Hynix, Chips 1.2V AQD-D4U16RV21-SM 288PIN, 2133 Mt/s, 2Gx4 2R, 1.23 Height, Samsung, Chips 1.2V Q2/2015 Q3/2015 Q4/2015
24 - 24 -
25 96 DRAM Naming Convention 9 6 D M DR1=DDR DR1I=INDUSTRIAL GRADE DDR1 D2=DDR2 D2I=INDUSTRIAL GRADE DDR2 D3=DDR3 SS=SDRAM SO-DIMM SD=DDR SO-DIMM SDI=INDUSTRIAL GRADE SO-DDR SD2=DDR2 SO-DIMM SD2I=INDUSRIAL GRADE SO-DDR2 SD3=DDR3 SO-DIMM SD3I=INDUSTRIAL GRADE SO-DDR3 M 6 4 M N N A P Memory Type Capacity 64M=64MB 128M=128MB 256M=256MB 512M=512MB 1G=1GB 2G=2GB 4G=4GB 8G=8GB Speed 100=100Mb/s 133=133Mb/s 266=266Mb/s 333=333Mb/s 400=400Mb/s 533=533Mb/s 667=667Mb/s 800=800Mb/s 1066=1066Mb/s 1333=1333Mbs Advance Feature NN= NON-ECC and NON- REGISTER ER= ECC AND REGISTER E= ECC ONLY Manufacturer AP=APACER ATL=ATP DA=DATA IK=INNODISK KI=KINGSTON MI=MIRCON SB=SWISSBIT TR=TRANSCEND VI=VIRTIUM Color / Symbol Key
26 1GB 512MB 128MB SDRAM SO-DIMM 96SS-128M133NN-TR 144PIN, 133Mb/s, 8Mx16, Height, Samsung Chips DDR1 DIMM 96DR-512M400NN-TR1 184PIN, 400Mb/s, 64Mx8, Height, Samsung Chips EOL: 96D1-512M400NN-AP 96D1-512M400NN-AD 96DR-1G400NN-TR1 184PIN, 400Mb/s, 64Mx8, Height, Samsung Chips EOL: 96D1-1G400NN-AP 96D1-1G400NN-AD Q2/2015 Q3/2015 Q4/2015
27 1GB 512MB 128MB DDR1 SO-DIMM 96SD-128M266NN-TR 200PIN, 266Mb/s, 16Mx16, Height, Samsung Chips EOL: 96SD-128M333NN-TR 200PIN, 333Mb/s, 16Mx16, Height, Samsung Chips EOL: 96SD-512M266NN-TR2 200PIN, 266Mb/s, 64Mx8, Height, Samsung Chips EOL: 96SD-512M400NN-TR 200PIN, 400Mb/s, 64Mx8, Height, Samsung Chips EOL: 96SD1-512M400NN-AD 200PIN, 400Mb/s, 64Mx8, NANYA 96SD1-512M400NN-AP 200PIN, 400Mb/s, 64Mx8, PROMOS 96SD-1G333NN-TR 200PIN, 333Mb/s, 64Mx8, Height, Samsung Chips EOL: 96SD-1G400NN-TR 200PIN, 400Mb/s, 64Mx8, Height, Samsung Chips EOL:Q4/ SD1-1G400NN-AP 200PIN, 400Mb/s, 64Mx8, PROMOS Q2/2015 Q3/2015 Q4/2015
28 1GB 512MB DDR1 SO-DIMM Semi-Wide Temperature (-20 ~ 80C) 96SD1I-512M400NN-I 200PIN, 400Mb/s, I-GRADE, MICRON 96SD1I-1G400NN-IN 200PIN, 400Mb/s, I-GRADE, PROMOS Q2/2015 Q3/2015 Q4/2015
29 512MB DDR2 DIMM 96D2-512M400NN-TR 240PIN, 400Mb/s, 64Mx8,, Samsung Chips 96D2-512M667NN-TRL 240PIN, 667Mb/s, 64Mx8, Height, Samsung Chips 2GB 1GB D2-1G533NN-TR1 240PIN, 533Mb/s, 64Mx8, Samsung Chips EOL:Q3/ D2-1G667NN-TRL 240PIN, 667Mb/s, 64Mx8, Height, Samsung Chips EOL:Q3/ D2-1G800NN-TRL1 240PIN, 800Mb/s, 128Mx8, Height, Samsung Chips 96D2-1G800NN-AP3 240PIN, 800Mb/s, 128Mx8, Height, Samsung Chips 96D2-2G667NN-TRL 240PIN, 667Mb/s, 128Mx8, Height, Samsung Chips EOL:Q3/ D2-2G667-AP 240PIN, 667Mb/s, 128Mx8, Height, Samsung Chips EOL:Q3/ D2-2G800NN-TRL1 240PIN, 800Mb/s, 128Mx8, Height, Samsung Chips 96D2-2G800NN-AP 240PIN, 800Mb/s, 128Mx8, Height, Samsung Chips Q2/2015 Q3/2015 Q4/2015
30 4GB 2GB 1GB 4GB 2GB 1GB 2GB DDR2 DIMM- Advanced Feature ECC 96D2-2G800E-AP1 240PIN, 800Mb/s, 128Mx8, Height, Samsung Chips 96D2-2G800E-TR1 240PIN, 800Mb/s, 128Mx8, Height, Samsung Chips Fully Buffered 96D2-1G667FB-TR 240PIN, 667Mb/s, 128Mx8, Height, Samsung Chips EOL: Q3/ D2-2G667FB-TR1 240PIN, 667Mb/s, 128Mx8, Height, Samsung Chips EOL: 96D2-4G667FB-TR 240PIN, 667Mb/s, 256Mx4, Height, Samsung Chips EOL: Q3/2015 Registered 96D2-1G400ER-TR 240PIN, 400Mb/s, 64Mx8, Height, Samsung Chips 96D2-2G667ER-TR 240PIN, 667Mb/s, 128Mx8, Height, Samsung Chips D2-4G667ER-TR1 240PIN, 667Mb/s, 256Mx4, Height, Samsung Chips Q2/2015 Q3/2015 Q4/2015
31 512MB 2GB 1GB 2GB 1GB DDR2 SO-DIMM 96SD2-512M667NN-TR 200PIN, 667Mb/s, 64Mx8, Height, Samsung Chips 96SD2-1G667NN-TR 200PIN, 667Mb/s, 128Mx8, Height, Samsung Chips EOL: Q3/ SD2-1G800NN-AP3 200PIN, 800Mb/s, 128Mx8, Height, Samsung Chips 96SD2-1G800NN-TR1 200PIN, 800Mb/s, 128Mx8, Height, Samsung Chips 96SD2-2G667NN-TR1 200PIN, 667Mb/s, 128Mx8, Height, Samsung Chips EOL: Q3/ SD2-2G800NN-TR1 200PIN, 800Mb/s, 128Mx8, Height, Samsung Chips 96SD2-2G800NN-AP2 200PIN, 800Mb/s, 128Mx8, Height, Samsung Chips DDR2 SO-DIMM Industrial Grade 96SD2-1G533NN-TR1 200PIN, 533Mb/s, 64Mx8, Height, Samsung Chips EOL: 96SD2I-1G667NN-AP4 200PIN, 667Mb/s, 128Mx8, Height, Micron Chips EOL: 96SD2I-2G667NN-AP1 200PIN, 667Mb/s, 128Mx8, Height, Micron Chips EOL: Q2/2015 Q3/2015 Q4/2015
32 2GB 1GB DDR3 DIMM 96D3-1G1333NN-TR1 240PIN, 1333Mb/s, 128Mx8, Height, Samsung Chips 96D3-1G1333NN-AP1 240PIN, 1333Mb/s, 128Mx8, Height, Hynix Chips EOL: 96D3-2G1066NN-TR 240PIN, 1066Mb/s, 128Mx8, Height, Samsung Chips EOL:Q3/ D3-2G1333NN-AP1 240PIN, 1333Mb/s, 256Mx8, Height, Hynix Chips EOL:Q3/ D3-2G1333NN-AP4 240PIN, 1333Mb/s, 128Mx8, Height, Hynix Chips EOL: 96D3-2G1333NN-TR2 240PIN, 1333Mb/s, 128Mx8, Height, Samsung Chips EOL:Q3/ D3-2G1600NN-APL 240PIN, 1600Mb/s, 256Mx8, Height, Hynix Chips 96D3-2G1600NN-TRL 240PIN, 1600Mb/s, 256Mx8, 0.74 Height, Samsung Chips 96D3-2G1600NN-TR 240PIN, 1600Mb/s, 256Mx8, Height, MICRON Chips Q2/2015 Q3/2015 Q4/2015
33 8GB 4GB DDR3 DIMM 96D3-4G1333NN-AP 240PIN, 1333Mb/s, 256Mx8, Height, Hynix Chips EOL:Q3/ D3-4G1600NN-APL 240PIN, 1600Mb/s, 256Mx8, Height, Hynix Chips 96D3-4G1600NN-TR 240PIN, 1600Mb/s, 256Mx8, Height, Samsung Chips 96D3-8G1333NN-APL 240PIN, 1333Mb/s, 512Mx8, Height, Micron Chips EOL:Q3/ D3-8G1600NN-APL 240PIN, 1600Mb/s, 512Mx8, Height, Micron Chips 96D3-8G1600NN-TR 240PIN, 1600Mb/s, 512Mx8, Height, Micron Chips Q2/2015 Q3/2015 Q4/2015
34 8GB 4GB 2GB 1GB DDR3 DIMM- Advanced Feature ECC 96D3-1G1333E-AP1 240PIN, 1333Mb/s, 128Mx8, Height, Hynix Chips EOL: 96D3-2G1333E-AP2 240PIN, 1333Mb/s, 256Mx8, Height, Hynix Chips 96D3-2G1333E-AT 240PIN, 1333Mb/s, 256Mx8, Height, Samsung Chips 96D3-4G1333E-AP 240PIN, 1333Mb/s, 256Mx8, Height, Hynix Chips 96D3-4G1333E-AT 240PIN, 1333Mb/s, 256Mx8, Height, Samsung Chips 96D3-8G1333E-TR 240PIN, 1333Mb/s, 512Mx8, Height, Micron Chips 96D3-8G1333E-AT 240PIN, 1333Mb/s, 512Mx8, Height, Samsung Chips 96D3-8G1600E-APL 240PIN, 1600Mb/s, 512Mx8, 0.74 Height, Micron Chips Q2/2015 Q3/2015 Q4/2015
35 DDR3 DIMM- Advanced Feature Registered 8GB 2GB 16GB 4GB 96D3-2G1333ER-AP1 240PIN, 1333Mb/s, 256Mx8, Height, Hynix Chips 96D3-4G1333ER-AP1 240PIN, 1333Mb/s, 256Mx8, Height, Hynix Chips EOL:Q2/ D3-4G1333ER-ATL 240PIN, 1333Mb/s, 256Mx8, 0.74 Height, Samsung Chips EOL:Q3/ D3-4G1600ER-TRL1 240PIN, 1600Mb/s, 256Mx8, 0.74 Height, Samsung Chips 96D3-4G1600ER-AT 240PIN, 1600Mb/s, 256Mx8, Height, Samsung Chips 96D3-8G1066ER-AT 240PIN, 1066Mb/s, 256Mx8, Height, Samsung Chips 96D3-8G1333ER-TR 240PIN, 1333Mb/s, 256Mx8, Height, Samsung Chips EOL:Q3/ D3-8G1333ER-TRL 240PIN, 1333Mb/s, 512Mx8, Height, MICRON Chips EOL:Q3/ D3-8G1600ER-TRL 240PIN, 1600Mb/s, 512Mx8, Height, MICRON Chips 96D3-16G1600ER-TRL 240PIN, 1600Mb/s, 2Gx4, Height, Samsung Chips Q2/2015 Q3/2015 Q4/2015
36 4GB 2GB 1GB DDR3 SO-DIMM 96SD3-1G1333NN-AP1 204PIN, 1333Mb/s, 128Mx8, Height, Hynix Chips EOL: 96SD3-1G1333NN-TR1 204PIN, 1333Mb/s, 128Mx8, Height, Samsung Chips 96SD3-2G1333NN-AP2 204PIN, 1333Mb/s, 256Mx8, Height, Hynix Chips 96SD3-2G1600NN-AP 204PIN, 1600Mb/s, 256Mx8, Height, Hynix Chips 96SD3-4G1066NN-AP 204PIN, 1066Mb/s, 256Mx8, Height, Hynix Chips 96SD3-4G1333NN-AP1 204PIN, 1333Mb/s, 256Mx8, Height, Hynix Chips 96SD3-4G1600NN-TR 204PIN, 1600Mb/s, 256Mx8, Height, Micron Chips 96SD3-4G1600NN-AP 204PIN, 1600Mb/s, 256Mx8, Height, Hynix Chips Q2/2015 Q3/2015 Q4/2015
37 8GB DDR3 SO-DIMM 96SD3-8G1333NN-TR 204PIN, 1333Mb/s, 512Mx8, Height, Micron Chips 96SD3-8G1600NN-TR 204PIN, 1600Mb/s, 512Mx8, Height, Micron Chips 96SD3-8G1600NN-AP 204PIN, 1600Mb/s, 512Mx8, Height, HYNIX Chips 96SD3-8G1600NN-AT 204PIN, 1600Mb/s, 512Mx8, Height, Samsung Chips Q2/2015 Q3/2015 Q4/2015
38 8GB 4GB 8GB 4GB 2GB DDR3 SO-DIMM- Advanced Feature ECC 96SD3-2G1333E-AP 204PIN, 1333Mb/s, 256Mx8, Height, Hynix Chips 96SD3-4G1066E-AP 204PIN, 1066Mb/s, 256Mx8, Height, Hynix Chips 96SD3-8G1333E-TR 204PIN, 1333Mb/s, 512Mx8, Height, Samsung Chips Low Voltage 96SD3L-4G1333NN-AP Apacer, 204PIN, 1333Mb/s, 512Mx8, 1.35V, Height, MICRO Chips 96SD3L-8G1333NN-AP 204PIN, 1333Mb/s, 512Mx8,1.35V, Height, MICRO Chips Q2/2015 Q3/2015 Q4/2015
39 Memory EOL Procedure For support and product management optimization, PAPS will follow the Memory phase-out procedure as below. 2 Month 1 Month Official EOL Announcement Last Time Buy Order EOL Replacement and Evaluation Approval
40 Thank you
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