CHAPTER 5 MOS FIELD EFFECT TRANSISTORS (MOSFETs)
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1 CHAPTER 5 MOS FIE EFFECT TRANSISTORS (MOSFETs Chaper Oule 5. ece Srucure ad Physcal Operao 5. Curre olage Characerscs 5.3 MOSFET Crcus a C 5.4 Applyg he MOSFET Amplfer esg 5.5 Small Sgal Operao ad Models 5.6 Basc MOSFET Amplfer Cofguraos 5.7 Basg MOS Amplfer Crcus 5.8 scree Crcu MOS Amplfers 5.9 The Body Effec ad Oher Topcs NTUEE Elecrocs. H. u 5
2 5. ece Srucure ad Physcal Operao ece srucure of MOSFET MOS meal oxde semcoducor srucure MOSFET s a four ermal dece: gae (G, source (S, dra ( ad body (B The dece sze (chael rego s specfed by chael wdh ( ad chael legh ( Two kds of MOSFETs: chael (NMOS ad p chael (PMOS deces The dece srucure s bascally symmerc erms of dra ad source Source ad dra ermals are specfed by he operao olage NTUEE Elecrocs. H. u 5
3 Operao wh zero gae olage The MOS srucure form a parallel plae plae capacor wh gae oxde layer he mddle Two p jucos (S B ad B are coeced as back o back dodes The source ad dra ermals are solaed by wo depleo regos whou coducg curre The operag prcples wll be roduced by usg he chael MOSFET as a example Creag a chael for curre flow Pose charges accumulae gae as a pose olage apples o gae elecrode Elecrc feld forms a depleo rego by pushg holes p ype subsrae away from he surface Elecros accumulae o he subsrae surface as gae olage exceeds a hreshold olage The duced rego hus forms a chael for curre flow from dra o source The chael s creaed by erg he subsrae surface from p ype o ype erso layer The feld corols he amou of charge he chael ad deermes he chael coducy NTUEE Elecrocs. H. u 5 3
4 Applyg a small dra olage A pose > s used o duce he chael chael ehaceme ype MOSFET Free elecros rael from source o dra hrough he duced chael due o a small S The curre flows from dra o source (oppose o he dreco of he flow of egae charge The curre s proporoal o he umber of carrers he duced chael The chael s corolled by he effece olage or oerdre olage: O The elecro charge he chael due o he oerdre olage: Q = C ox O Gae oxde capacace C ox s defed as capacace per u area MOSFET ca be approxmaed as a lear ressor hs rego wh a ressace alue ersely proporoal o he excess gae olage (ma = +4 = +3 = + = + S (m NTUEE Elecrocs. H. u 5 4
5 Operao as creasg dra olage As S creases, he olage alog he chael creases from 0 o S The olage bewee he gae ad he pos alog he chael decreases from a he source ed o ( S a he dra ed Sce he erso layer depeds o he olage dfferece across he MOS srucure, creasg S wll resul a apered chael The ressace creases due o apered chael ad he S cure s o loger a sragh le A he po Ssa =, he chael s pched off a he dra sde Icreasg S beyod hs alue has lle effec o he chael shape ad sauraes a hs alue Trode rego: S < Ssa Saurao rego: S Ssa Gae 0 S Source Chael ra S S = 0 S = NTUEE Elecrocs. H. u 5 5
6 erao of he I relaoshp Iduced charge he chael due o MOS capacor: Q ( x C [ ( x] I Equale ressace dr alog he chael: dr q x h( x I deraos: ox d dr [ ox [( Process rascoducace parameer (A/ : k = C ox Aspec rao: / Trascoducace parameer (A/ : k = C ox (/ ra curre of MOSFETs: Trode rego: k [( Saurao rego: dx Q ( x C S [ ox 0 0 S C C dx dx ( Q ( x I O ressace (chael ressace for small S : r S / k( ox ( x] d I sa S ] dx dx ( x] k ( S S ] NTUEE Elecrocs. H. u 5 6
7 The p chael ehaceme ype MOSFET p chael ehaced ype MOSFETs are fabrcaed o ype subsrae wh p + source ad p + dra Normally, source s coeced o hgh olage ad dra s coeced o low olage As a egae olage apples o he gae, he resulg feld pushes elecros ype subsrae away from he surface, leag behd a carrer depleo rego As gae olage exceeds a egae hreshold olage, holes accumulae o he subsrae surface A p ype chael (erso layer s duced for curre flow from source o dra Negae gae olage s requred o duce he chael ehaceme ype MOSFET Complemeary MOS (CMOS CMOS echology employs boh PMOS ad NMOS deces If subsrae s p ype, PMOS rassors are formed well ( ype body eeded If subsrae s ype, NMOS rassors are formed p well (p ype body eeded The subsrae ad well are coeced o olages whch reerse bas he jucos for dece solao Exercse 5. (Texbook Exercse 5. (Texbook NTUEE Elecrocs. H. u 5 7
8 Crcu symbol chael ehaceme mode MOSFET 5. Curre olage Characerscs The curre olage characerscs Cu off rego: ( 0 Trode rego: ( > ad S < Cox [( S S ] Saurao: ( > ad S C ox ( large sgal model (saurao NTUEE Elecrocs. H. u 5 8
9 Chael legh modulao The chael pch off po moes slghly away from dra as S > Ssa The effece chael legh ( eff reduces wh S Elecros rael o pch off po wll be swep o dra by elecrc feld The legh accoued for coducace he chael s replaced by eff : ' k [ k ' eff ( x] d 0 0 assumg ( ha Fe oupu ressace eff dx ' ' k ( k ( ' S k ( ( S Δ ' k ro [ ] cosa [ ( ] I I S A ( A (Early olage = / s proporoal o chael legh: A = A A s process echology depede wh a ypcal alue from 5 ~ 50 /m ue o he depedece of o S, MOSFET shows fe oupu ressace saurao rego NTUEE Elecrocs. H. u 5 9
10 The body effec The BS ad B juco should be reerse based for he dece o fuco properly Normally, he body of a chael MOSFET s coeced o he mos egae olage The depleo rego wdes BS ad B jucos ad uder he chael as SB creases Body effec: creases due o he excess charge he depleo rego uder he chael The body effec ca cause cosderable degradao crcu performace Threshold olage: Curre equaos: where sa 0 [ Cox [( Cox ( Temperaure effec f qn A S C ox SB ad S ] f f kt q S N l( ] A decreases by ~m for eery C rse creases wh emperaure k decreases wh emperaure decreases wh creasg emperaure For a ge bas olage, he oerall obsered effec of a emperaure crease s a decrease NTUEE Elecrocs. H. u 5 0
11 Breakdow ad pu proeco eak aalache p juco bewee he dra ad subsrae suffers aalache breakdow as S creases arge dra curre s obsered Typcal breakdow olage 0 ~ 50 Puch hrough Occurs a lower olage (~0 for shor chael deces ra curre creases rapdly as he dra depleo rego exeds hrough he chael oes o resul permae damage o he dece Gae oxde breakdow Gae oxde breakdow occurs whe gae o source olage exceeds 30 Permae damage o he dece Ipu Proeco Proeco crcu s eeded for he pu ermals of MOS egraed crcus Usg clampg dode for he pu proeco NTUEE Elecrocs. H. u 5
12 The p chael ehaceme ype MOSFET For a PMOS, he source s coeced o hgh olage ad he dra s coeced o low olage To duce he p chael for he MOSFET, a egae s requred (hreshold olage < 0 The body s ormally coeced o he mos pose olage The curre olage characerscs Cu off rego: ( p 0 Trode rego: ( < p ad S > p p ox p S S Saurao: ( < p ad S p C pc [( ox ( p ] Trascoducace parameer k p = p C ox 0.4 k The alues of, S, ad for p chael MOSFET operao are all egae ra curre s sll defed as a pose curre NTUEE Elecrocs. H. u 5
13 Exercse 5.4 (Texbook Exercse 5.5 (Texbook Exercse 5.6 (Texbook Exercse 5.7 (Texbook NTUEE Elecrocs. H. u 5 3
14 C aalyss for MOSFET crcus 5.3 MOSFET Crcus a C Assume he operao mode ad sole he dc bas ulzg he correspodg curre equao erfy he assumpo wh ermal olages (cuoff, rode ad saurao If he soluo s ald, chage he assumpo of operao mode ad aalyze aga C aalyss example Assumg MOSFET saurao ' SS I RS k ( R 3 or (o a ald soluo ( S = 4 ( = saurao S Assumg MOSFET saurao 3 ad S. 696 S < o saurao! Assumg MOSFET rode ' I k [( S S ] I R 3.35, S 0.35 ad I 0. 33mA NTUEE Elecrocs. H. u 5 4 S S I S ( R SS R S < rode SS
15 Exercse 5.8 (Texbook Exercse 5.9 (Texbook Exercse 5.0 (Texbook Example 5.5 (Texbook Example 5.6 (Texbook Exercse 5. (Texbook Example 5.7 (Texbook Example 5.8 (Texbook NTUEE Elecrocs. H. u 5 5
16 MOSFET olage amplfer 5.4 Applyg he MOSFET Amplfer esg MOSFET wh a resse load R ca be used as a olage amplfer The olage rasfer characersc (TC The plo of I ( ersus O ( S C aalyss as creases from 0 o Cuoff mode: (0 < 0 Saurao mode: ( > Trode mode: ( furher creases O O S k S ( k( k[( S S ] O S k[( S S ] R R NTUEE Elecrocs. H. u 5 6
17 Basg he MOSFET o oba lear amplfcao The slope he TC dcaes olage ga MOSFET saurao ca be used as olage amplfcao Po Q s kow as bas po or dc operag po S k( The sgal o be amplfed s supermposed o BE ( = + gs ( The me aryg par ( s he amplfed sgal The crcu ca be used as a lear amplfer f: A proper bas po s chose for ga The pu sgal s small amplude The small sgal olage ga The amplfer ga s he slope a Q: A d Maxmum olage ga of he amplfer S k ( d I R A A max / / O O R R k O R NTUEE Elecrocs. H. u 5 7
18 eermg he TC by graphcal aalyss Prodes more sgh o he crcu operao oad le: he sragh le represes effec he load = ( S /R The operag po s he erseco po ocag he bas po Q The bas po (erseco s deermed by properly choosg he load le The oupu olage s bouded by (upper boud ad O (lower boud The load le deermes he olage ga The bas po deermes he maxmum upper/lower olage swg of he amplfer NTUEE Elecrocs. H. u 5 8
19 5.5 Small Sgal Operao ad Models The C bas po MOSFET saurao ra curre: ra olage: The small sgal crcu parameers are deermed by he bas po The sgal sgal operao The small sgal dra curre: The small sgal olage ga: NTUEE Elecrocs. H. u 5 9 ( O k k I O S R I d gs gs gs gs gs I k k k k k k ( ( ( ( ( ' ' ' ' ' ' gs d k ( ' O gs d gs O d d d d d d R k A R k R R R I R (
20 The small sgal parameers Trascoducace (g m : descrbes how d chage wh gs g m d gs k ' ( k ' I Oupu ressace (r o : descrbes how d chage wh ds ro [ ] cosa I I A S ra curre ares wh S due o chael legh modulao Fe r o o model he lear depedece of o S The effec ca be egleced f r o s suffcely large Body rascoducace (g mb : descrbes how d chages wh bs g mb k ' ( BS S ' cosa k ( cosa BS [ ] where qn / C 0 F SB F A S SB gmb g m F SB BS ox g m SB G + gs S g m gs g mb bs r o + bs B The body effec of he MOSFET s modeled by g mb Ca be egleced f body ad source are coeced ogeher NTUEE Elecrocs. H. u 5 0
21 The small sgal equale crcu models Hybrd model Neglec r o T model Neglec r o NTUEE Elecrocs. H. u 5
22 Three basc cofguraos 5.6 Basc MOSFET Amplfer Cofgurao Commo Source (CS Commo Gee (CG Commo ra (C Characerzg amplfers The MOSFET crcus ca be characerzed by a olage amplfer model (ulaeral model The elecrcal properes of he amplfer s represeed by R, R o ad A o The aalyss s based o he small sgal or lear equale crcu (dc compoes o cluded olage ga: A Oerall olage ga: o R R R G o o sg A o R R R sg A R R R sg R R R so A o NTUEE Elecrocs. H. u 5
23 The commo source (CS amplfer Characersc parameers of he CS amplfer Ipu ressace: Oupu ressace: Ope crcu olage ga: olage ga: A Oerall olage ga: CS amplfer ca prode hgh olage ga R g R m o R r Ipu ad oupu are ou of phase due o egae ga Oupu ressace s moderae o hgh Small R reduces R o a he cos of olage ga A o o R g ( R r g m o ( R R ro gm( R R r r G gm( R R ro gm ( R R r R r R sg m R sg NTUEE Elecrocs. H. u 5 3
24 The commo source (CS wh a source ressace Characersc parameers (by eglecg r o Ipu ressace: R Oupu ressace: Ro R Ope crcu olage ga: A o gmr g R olage ga: A Oerall olage ga: G m gm( R R g R m gm( R R g R m s s s Source degeerao ressace R s s adoped Ga s reduced by he facor (+g m R s Cosdered a egae feedback of he amplfer NTUEE Elecrocs. H. u 5 4
25 The commo gae (CG amplfer Characersc parameers of he CG amplfer (by eglecg r o Ipu ressace: R / g m Oupu ressace: Ro R Ope crcu olage ga: Ao gmr olage ga: A g R R Oerall olage ga: m( G g R R CG amplfer ca prode hgh olage ga Ipu ad oupu are phase due o pose ga Ipu ressace s ery low A sgle CG sage s o suable for olage amplfcao Oupu ressace s moderae o hgh Small R reduces R o a he cos of olage ga The amplfer s o loger ulaeral f r o s cluded m sg g m ( R NTUEE Elecrocs. H. u 5 5
26 The commo collecor (C amplfer Characersc parameers of he C amplfer (by eglecg r o Ipu ressace: R Oupu ressace: R o / g m olage ga: A R /( R / gm gmr /( gmr Oerall olage ga: G ( R /( R / gm gmr /( gmr C amplfer s also called source follower. Ipu ressace s ery hgh Oupu ressace s ery low The olage ga s less ha bu ca be close o C amplfer ca be used as olage buffer NTUEE Elecrocs. H. u 5 6
27 C bas for MOSFET amplfer 5.7 Basg MOS Amplfer Crcus The amplfers are operag a a proper dc bas po ear sgal amplfcao s proded based o small sgal crcu operao The C bas crcu s o esure he MOSFET saurao wh a proper collecor curre I Basg by fxg gae o source olage Fx he dc olage o specfy he saurao curre of he MOSFET: Bas curre deaes from he desrable alue due o araos he dece parameers ad Basg by fxg gae olage ad coecg a source ressace The bas codo s specfed by: G k( RS ad I k( ra curre has beer olerace o araos he dece parameers I k ( k ( G NTUEE Elecrocs. H. u 5 7
28 Basg usg a dra o gae feedback ressor A sgle power supply s eeded R G esures he MOSFET saurao ( = S MOSFET operag po: The alue of he feedback ressor R G affecs he small sgal ga Basg usg a cosa curre source R The MOSFET ca be based wh a cosa curre source I The ressor R s chose o operae he MOSFET ace mode The curre source s ypcally a curre mrror Curre mrror crcu: MOSFETs Q ad Q are saurao The referece curre I REF = I = I I REF R k ( k ( he applyg o he amplfer crcu, he olage has o be hgh eough o esure Q saurao k ( NTUEE Elecrocs. H. u 5 8
29 Example 5. (Texbook Exercse 5.33 (Texbook Exercse 5.34 (Texbook Exercse 5.35 (Texbook Exercse 5.36 (Texbook NTUEE Elecrocs. H. u 5 9
30 5.8 scree Crcu MOS Amplfers Crcu aalyss: C aalyss: Remoe all ac sources (shor for olage source ad ope for curre source All capacors are cosdered ope crcu C aalyss of MOSFET crcus for all odal olages ad brach curres Fd he dc curre I ad make sure he MOSFET s saurao AC aalyss: Remoe all dc sources (shor for olage source ad ope for curre source All large capacors are cosdered shor crcu Replace he MOSFET wh s small sgal model for ac aalyss The crcu parameers he small sgal model are obaed based o he alue of I Complee amplfer crcu C equale crcu AC equale crcu NTUEE Elecrocs. H. u 5 30
31 The commo source (CS amplfer The commo source amplfer wh a source ressace NTUEE Elecrocs. H. u 5 3
32 The commo gae (CG amplfer The commo dra (C amplfer NTUEE Elecrocs. H. u 5 3
33 The amplfer frequecy respose The ga falls off a low frequecy bad due o he effecs of he couplg ad by pass capacors The ga falls off a hgh frequecy bad due o he eral capace effecs he MOSFETs Mdbad: All couplg ad by pass capacors (large capacace are cosdered shor crcu All eral capace effecs (small capacace are cosdered ope crcu Mdbad ga s early cosa ad s ealuaed by small sgal aalyss The badwdh s defed as B = f H f A fgure of mer for he amplfer s s ga badwdh produc defed as GB = A M B NTUEE Elecrocs. H. u 5 33
34 Exercse 5.37 (Texbook Exercse 5.38 (Texbook Exercse 5.39 (Texbook Exercse 5.40 (Texbook Exercse 5.4 (Texbook NTUEE Elecrocs. H. u 5 34
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