Multi-Die Integration Strategies and System Partitions in Mobile WWAN Devices

Transcription

1 Multi-Die Integration Strategies and System Partitions in Mobile WWAN Devices Presented by: Dr. Harrison Chang, USI, Date: Nov 14, 2012 Ver.:0.9

2 Outline Strategic Thinking Smartphone Partition and Challenges Tear Down: iphone5 and ipad3 4G Miniaturization Approach

3 Package vs. Module; Design Rule vs. Design Case Generic Package For IC of a Wide Range of Industries Each Industry May Have Different System Requirement: Power, Voltage, Frequency, EMI/EMC, Timing, Thermal, Mechanical, Temperature Ranges, May Need to Qualify for the Conjunction of All Applicable Requirement Comprehensive Design Rule to Accommodate Versatile Applications Specialized Module For IC of Specific Industries These Industries Often Have Similar System Requirement Just Need to Qualify for the Intended Application Requirement Single Point Design Case for Specific Application

4 From Multi-Die Integration to System in Package RF Passive Circuit Design Package-Module Co-Design Full Type Approval Product Qualification Thermal Design SW Development Layout Design Stress & Reliability Design Design for Manufacture & Performance!! Main Board Design RF Communication Integration

5 Multi-Die Integration: Cost Up or Down Cost-up Factors New CAPEX Cost of Yield: (1-x n ) or 1- (x n ) or in Between Volume: Customized vs. Standard Fluctuation of Commodity Pricing Cost-down Factors Less Package and Testing Less Material Design Cycle: Rule Based to Case Based Less Overall System Cost

6 Who Owns the Multi-Die Integration Die Vender #1? Die Vender #2? Module Maker? Device Owner? What about GM?

7 Typical Partitions in Smartphone Antenna Switch Front End Components Out Side of CMOS Node RF Transceiver PMU Communication Processor Codec Memory Application Processor PMU GPS Wi-Fi BT POP Memory Sensors

8 Challenges at 3G/4G Modem 2G 3G 3.5G 3.9G 4G EDGE EVOLUTION

9 3G and 4G Bands FDD TDD EU US LTE Name Uplink Downlink MO LTE Band Name Allocation (MHz) MO # (MHz) (MHz) Number (MHz) 1 2.1GHz NTT Docomo Softbank (TBD) 33 TDD2000 Lower PCS TDD2000 Upper V MHz KT, SKT(2013) 3-IT (2013) VF-IT (2013) EE-UK (TBD) 35 TDD1900 Lower V (Japan) KDDI 38 IMT EXT Gap All Ausie MO (Telstra, Optus, VF) 4 AWS AT&T TMO-US(TBD2013) 36 TDD1900 Upper MHz LGU, SKT 37 PCS Center Gap More Are SFR Telefornica-DE VF-DE DT-DE E-Plus-DE 3-IT (2013) Orange-FR (TBD2012) Coming! V 7 2.6GHz (IMT Ext) VF-IT (2013) 39 China TDD All Dutch MO(KPN, VF,TMO) All Spanish MO in (VF, Telefornica, Orange) O2-UK (2013) 3-UK (TBD) Yota-RUS 8 900Mhz MHz Mhz (Japan#2) KDDI 41 US Ext1.7/ MHz Lower MHz (Japan#3) 12 Lower 700MHz V 13 Upper C 700MHz Verizon Operating Frequency Common UL Frequencies UE DL Frequencies Channel Number Channel Number (UARFCN) Upper D 700MHz public safety Public Safety Band Band Name transmit (MHz) UE receive (UARFCN) UL DL Region V 17 Lower B 700MHz AT&T (Japan#4) I 2100 IMT (Japan#5) Vodafone additional 12, additional 412, Orange-FR(TBD2012) SFR II 1900 PCS , 62, 87, 112, 137, 162, 437, 462, 487, 512, 537, 562, TMO-DE Telefornica-DE III 1800 DCS , 212, 237, 262, , 612, 637, 662, Europe, Asia, Oceania VF-DE additional 1662, additional 1887, V 20 CEPT DT-DE IV 1700 AWS , 1712, 1737, 1762, 1912, 1937, 1962, 1987, 2012, VF-IT (2013) All Spanish MO (VF, 1787, 1812, 1837, , 2062, 2087 Videotron), Chile (VTR, Nextel) Telefornica, Orange additional 782, additional 1007, 2014) V 850 CLR , 807, 812, 837, , 1032, 1037, 1062, 1087 EE-UK (TBD) 3-UK (TBD) VI additional 812, additional 1037, Japan (NTT DoCoMo) (Japan#6) additional 2362, additional 2587, 24 US L Band V 25 US PCS + G Block Sprint 2387, 2412, 2437, 2462, 2612, 2637, 2662, 2687, 2712, VII 2600 IMT-E Europe (future) V MHz iden Sprint (2014) 2487, 2512, 2537, 2562, 2737, 2762, 2787, 2812, 2837, 2587, 2612, 2637, 2662, 2862, 2887, 2912 VIII 900 GSM Europe, Asia, Africa, Oceania (Telstra, Optus, Vodafone AU & NZ, Three Mobile AU, 2 and Telecom NZ), Brazil Americas (AT&T, Bell Mobility, Telcel, Telus, Rogers) USA (T-Mobile, Cincinnati Bell Wireless), Canada (WIND Mobile, Mobilicity, Americas (AT&T, Bell Mobility, Telcel, Telus, Rogers), Oceania (Telstra, Telecom NZ, Vodafone AU) Europe[1], Asia, Oceania (Optus, Vodafone AU, Vodafone NZ), Dominican Republic (Orange), Venezuela (Digitel GSM) IX Japan (E Mobile, NTT DoCoMo) X additional 3187, additional 3412, 3212, 3237, 3262, 3287, 3437, 3462, 3487, 3512, 3537, 3312, 3337, 3362, 3387, 3562, 3587, 3612, 3637, 3662, 3412, 3437, XI Japan (Softbank) XII 700 SMH additional 3702, additional 3927, 3707, 3732, 3737, 3762, 3932, 3957, 3962, 3987, 3992 USA (future) (lower SMH blocks A/B/C) XIII 700 SMH additional 3842, additional 4067, USA (future) (upper SMH block C) XIV 700 SMH additional 3942, additional 4167, 4192 USA (upper SMH block D) (VZW)

10 Challenges at the Connectivity Connectivity 2.4GHz, 5GHz, 60GHz WiFi, BT, GPS, FM, NFC, Co-existence with LTE Mobile and WiFi Digital Integration

11 Challenge on PCB Area Side View (from Bottom) 4.5mm Phone T: 7.1mm vs. 7.6mm 3.75mm Battery 2.3mm Metal Shield Metal Shield 1.5mm Battery PCB PCB 0.7mm Metal Shield W = 56mm Moto Droid Razr 33.3 mm 19.5 mm Apple iphone5 Moto Droid Razr (4G LTE) iphone4s (3G) iphone5 (4G LTE) LCD 4.3" 3.5" 4" Phone Size Battery PCBA L(mm) W(mm) T(mm) Area(mm^2) Capacity (Whr) 1780mAh 3.7V/5.3Whr (1420mAh) 3.8V/5.45Whr L(mm) W(mm) T(mm) Size (mm^3) L W T Area(mm^2)

12 iphone5 Example

13 iphone5 Example (Continue) Skyworks GSM/GPRS/EDGE power amplifier module SWUA RF antenna switch module Triquint WCDMA / HSUPA PA/ duplexer module for UMTS bands Avago AFEM-7813 dual-band LTE B1/B3 PA+FBAR duplexer module Skyworks CDMA power amplifier module Avago A5613 ACPM-5613 LTE band 13 power amplifier Qualcomm PM8018 RF power management IC Hynix H2JTDG2MBR 128 Gb (16 GB) NAND flash Apple 338S1131 dialog power management IC* Apple 338S1117 Cirrus Logic device (second image) STMicroelectronics L3G4200D (AGD5/2235/G8SBI ) low-power threeaxis Murata/USI 339S0171 Wi-Fi module

14 iphone5 Example (Continue) STMicroelectronics LIS331DLH (2233/DSH/GFGHA) ultra low-power, high performance, three-axis linear accelerometer Texas Instruments 27C245I touch screen SoC Broadcom BCM5976 touchscreen controller Apple A6 application processor Qualcomm MDM9615M LTE modem Qualcomm RTR8600 Multi-band/mode RF transceiver

15 ipad3 4G Example

16 ipad3 4G Example (Continue) Texas Instruments CD3240 driver device Broadcom BCM a/b/g/n MAC/baseband/radio with integrated Bluetooth 4.0+HS and FM transceiver 2 x 4Gb Elpida LP DDR2 = 1 GB DRAM in separate packages in a 64-bit configuration Fairchild FDMC 6683 Broadcom BCM5973 I/O controller Broadcom BCM5974 microprocessor Apple 338S0987 (Cirrus Logic audio codec) Apple A5X processor Apple 343S This IC looks like an updated version of the 343S052 that we found in the ipad 2, and is used for power management. The NAND, part number THGVX1G7D2GLA08 is a 16 GB 24 nm MLC Flash from Toshiba Qualcomm MDM9600-3G and 4G wireless modem Skyworks Avago A7792

17 Miniaturization Technology Roadmap USI ASE USI/ASE Third Party MUF (CFS) Molding & Shielding Conformal Shielding Compartment Shielding X Y Selective/Irregular Molding/Coating Composite Molding/Coating 3D Module MoM TVM FO WLP FO-TVM 3D FO WLP Shielding Z Reduction/ 3D Stacking XY Reduction IPD IPD for RF IPD Hi-Cap + Hi-Q IND High Density SMT d Phase 2, d=6 Phase 3, d=4 Phase 4, d= Development Research Version # 17

18 Q & A

19 19