RF SOI: Replacing GaAs, One Smartphone at a Time

Transcription

1 RF SOI: Replacing GaAs, One Smartphone at a Time Peter A. Rabbeni, Director RF Product Marketing and Business Development SOI Consortium RF SOI Workshop Shanghai, September 2015

2 Agenda Market trends impacting RF FEM Why RF SOI, and why now? GLOBALFOUNDRIES RF SOI technologies 2

3 Market trends impacting RF FEM

4 Mobile Data Usage Exploding General Mobile Data Traffic Growth/Top Line Device Data Consumption 30 Exabytes per month B 57% CAGR 6.8 EB 4.2 EB 10.7 EB 16.1 EB 24.3 EB M2M Module = 3 X Wearable Device = 6 X Smartphone = 37 X Tablet = 94 X Laptop = 119 X 16.7% CAGR Source: Adapted from Cisco Global Mobile Data Traffic Forecast: , Feb

5 Access to High-Speed Data Driving Worldwide Smartphone Growth Low latency: Improved user experience High peak data rates: Rich content delivery (HD, 4K video) Scalable capacity/ bandwidth: Efficient network deployment Spectrally efficient: Improved spectrum reuse Millions of Units Handset Shipments 2 / 2.5G 3G LTE Overall growth: 3.9% CAGR ( ) LTE growth: 26.2% CAGR Source: IHS Smartphone Electronics Design Intelligence Database Q

6 Connectivity Standards Evolution LTE band proliferation: 40+ bands (700MHz 2.6GHz and beyond) Carrier aggregation (CA): Inter- and intra-band CA LTE-A Carrier Aggregation MIMO techniques for wide bandwidth: Independent TX/ RX OFDMA waveform: Greater than 7:1 PAPR (U/L and D/L) Wi-Fi MIMO for data expansion Source: Microwaves & RF, Oct 2013; Nujira ET Tumblr Blog OFDMA Modulation Envelope 6

7 Standards Evolution Driving RF FEM Complexity RF switches: Band and mode switching Antenna impedance matching: Wheeler limit circumvention Antenna aperture tuning: Dynamic antenna pattern control Filters: Interference and noise mitigation Power amplifiers: Multi-mode/multi-band and high PAE Source: SOITEC White Paper, Nov

8 Complexity is Reflected in Successive Smartphone Architectures 2G Handset 3G Handset 4G/LTE Handset 8

9 Standards and FEM Architecture Driving Tougher RF Performance Lower insertion loss: Increased RF path loss Higher linearity: Interference distortion Improved isolation: Internal and external interferers Radiated coupling/ layout Tx / Rx Antenna RF Test Connector Diplexer B17 = MHz (UL) MHz (DL) B4 = MHz (DL) Low Bands Low Band Switch High Band Harmonic Filter Duplexer H3 of B17 falls inside of B4!!! B17 Rx B17 Tx B4 Rx Increased efficiency: Higher PAPR (D/L and U/L) High Bands Switch Duplexer B4 Tx Carrier aggregation places additional burden on these requirements 9

10 Why RF SOI, and why now?

11 Why RF SOI? Device stacking: Overcomes silicon Johnson Limit Improved efficiency vs. power combining Substrate benefits for RF: Reduced parasitics higher Q, lower loss and better noise figure Increased isolation/ linearity Logic and control integration: MIPI interface now standard Low cost: Better economics than III-V Mainstream silicon manufacturing: Readily available capacity Source: FDSOI and RFSOI Forum February 27,

12 Why Now? Performance Continuous device improvement (Ron*Coff vs. BVds) Design community experience increasing Substrate Advancement Improved harmonics better linearity Multiple sources 200mm and 300mm Manufacturing Maturity/ Cost Leverages mainstream manufacturing (200mm and 300mm) Improved economics over III-V technologies Integration Potential Growing digital content RF functional innovation (switches, tuners, PA s, filters) Migration to 300mm Technology Platform for RF FEM Innovation 12

13 RF SOI Application Adoption and Growth 4.0 RF SOI Market SAM Overall growth: 20.2% CAGR ( ) RFSOI Wafers (normalized) Filters PA RF Switch PA controller Source: Internal GLOBALFOUNDRIES marketing data Source: TechInsights Teardown Report,; SOITEC White Paper, Feb

14 RF FEM Technology Trends Power Amplifiers Antenna / Mode Switches Antenna Tuners Filters, Duplexers LNA, LNA+ Switch 2010 Si LDMOS GaAs GaAs CMOS GaAs RF SOI SAW BAW RF SOI RF SOI RF SOI SiGe? RF MEMS? RF MEMS? Source: Jerome Azemar, Yole, Saxony SOI Forum - July, 2015; GLOBALFOUNDRIES marketing insight 14

15 RF SOI Can be a Platform for Innovation and Integration Global1 Single chip MMMB PA + Switch Common Bias Generation Low Band Mid Band RFFE MiPi Control Interface High Band Low Band PA MHz 5 Unique Low Band Outputs Mid Band PA MHz High Band PA MHz 5 Unique Mid Band Outputs 4 Unique High Band Outputs Tunable input, inter-stage and output matching Source: Peregrine GLOBAL1 information 15

16 Is the Future of RF FEMs Tunable? Significant work continues around the concept of introducing tunability into the FEM architecture Latest generation: 12 duplexers and 37 band pass filters!!! Many different approaches have been investigated: Piezo materials RF MEMS SOI Hybrid approaches Simultaneous requirements for low loss, high Q and reasonable percentage bandwidth are difficult to achieve Source: SOITEC White Paper, Nov

17 RF SOI and its Significance to China (M) 1600 Millions of Connections 1.36B China wireless network well into transition from legacy 2G/3G to 4G/LTE Thoughtful vision in convergence of TDD and FDD systems: Localized spectral efficiency Worldwide roaming capability Provides an opportunity to rethink architecture: Optimize for cost and performance to meet the expected growth and penetration TD-LTE, VoLTE devices M2M / IoT & wearables RF SOI as a platform for integration: Simplified radio requirements may provide opportunities for much higher levels of integration than previously imagined 1200 Time Asia Pacific U.S. / Canada Other Europe, Americas, Africa, Middle East 670M 166M 300M 456M 970M Source: Adapted from Informa Telecoms & Media, WCIS+ June 2013 LTE FDD MHz each block Uplink Frequency Time LTE TDD MHz single block Downlink Downlink Uplink Frequency Guard period Source: 17

18 GLOBALFOUNDRIES RF SOI technologies

19 GLOBALFOUNDRIES RF SOI a History of Leadership RF SOI Milestones Announced 7RF SOI 5 million RF SOI products shipped 7RF low distortion & cost-reduced options ~2 billion RF SOI products shipped World s 1 st 300mm RF SOI production shipped >10 billion RF SOI products shipped Announced 7SW SOI >16.5 billion RF SOI products shipped 1,450 tapeouts Engagements with more than 80% of the world s top front-end module suppliers High-volume production for nearly a decade and more than 16 billion RF SOI products shipped to date Experience in both 200mm and 300mm manufacturing with multiple fab locations across the globe Continued device and technology innovation to meet the needs of an evolving market 19

20 GLOBALFOUNDRIES Technology and Manufacturing Roadmap RF SOI Applications / Markets Technology/ Process 7RF SOI 7RF SOI Low-D 7SW 130 RF SOI RF SOI Gen 4 RF SOI Gen 5 Substrate HR SOI Trap Rich SOI Manufacturing 200mm 300mm 20

21 GLOBALFOUNDRIES RF SOI Performance Continuity 250 Channel length scaling (Ron*Coff/ BVds) Junction engineering Silicon layer and BOX optimization Substrate optimization Ground rule reduction for improved die size Ron*Coff (fs) RF SOI 7RF SOI Low-D 130 RF SOI 7SW RF SOI Gen

22 Looking Ahead to 5G GLOBALFOUNDRIES 45nm RF SOI 5G is the next evolution of the mobile network: Coexistence with 4G/LTE systems Millimeter wave for short range & high bandwidth Tight coupling between transceiver & FEM / phased array to support beam steering GLOBALFOUNDRIES 45nm RF SOI well suited to support transceiver / FEM integration for 5G: Intrinsic device f T is in excess of 485GHz!! 45nm RF SOI has been extensively evaluated for RF / FEM / mmwave building blocks: LNA, switches, multipliers, power amplifiers & mixers High efficiency mmwave signal amplification Low insertion loss & high isolation for reduced noise Source: GLOBALFOUNDRIES Product Planning and RF Marketing 22

23 GLOBALFOUNDRIES Worldwide Manufacturing and Support East Fishkill, New York Malta, New York Burlington, Vermont Dresden, Germany Singapore 18,000 employees 7M+ WPY in 8 equivalents 5 manufacturing centers on 3 continents Localized technical support 23

24 Partnering for Success Engagement Business development Product marketing Field sales Development Field applications Technical support Process development PDK / modeling Design & Front-end Services Foundational libraries & IP Third party design houses Alternative simulator support MPWs and prototyping NPI & Manufacturing Customer engineering Reliability / failure analysis Skew lots and device striping Program management Back-end Services Packaging: 2D / 2.5D / 3D Test 24

25 GLOBALFOUNDRIES RF SOI Value Proposition Roadmap Continuous device / feature improvement aligned with needs of the market Technology Leadership Best in class PDK, models and design enablement for ease of design / TTM Manufacturing Scale World-class manufacturing in multiple worldwide locations 200mm and 300mm Technical Support Worldwide technical support team and design partner ecosystem 25

26 Key Takeaways Standards evolution creating greater demand for devices that can support data rich content However, these same standards are driving greater RF system complexity and performance challenges RF SOI has emerged as a technology that has demonstrated it can become a platform for RF FEM integration GLOBALFOUNDRIES has a long history of RF SOI development and high-volume manufacturing, and provides a technology roadmap aligned with the needs of the market and our customers GLOBALFOUNDRIES provides a complete foundry support model that ensures flexibility and spans the entire product lifecycle 26

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