BFR380 L3 Portable TV Applications

Transcription

1 L o w C o s t D V B - T /H L N A u s i n g BFR380 L3 Portable TV Applications App lication No te AN221 Revision 1.0, RF and Protect i on Devi ces

2 Edition Published by Infineon Technologies AG Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

3 Portable TV Applications Revision History: , Revision 1.0 Previous Revision: Page Subjects (major changes since last revision) Trademarks of Infineon Technologies AG A-GOLD, BlueMoon, COMNEON, CONVERGATE, COSIC, C166, CROSSAVE, CanPAK, CIPOS, CoolMOS, CoolSET, CONVERPATH, CORECONTROL, DAVE, DUALFALC, DUSLIC, EasyPIM, EconoBRIDGE, EconoDUAL, EconoPACK, EconoPIM, E-GOLD, EiceDRIVER, EUPEC, ELIC, EPIC, FALC, FCOS, FLEXISLIC, GEMINAX, GOLDMOS, HITFET, HybridPACK, INCA, ISAC, ISOFACE, IsoPACK, IWORX, M-GOLD, MIPAQ, ModSTACK, MUSLIC, my-d, NovalithIC, OCTALFALC, OCTAT, OmniTune, OmniVia, OptiMOS, OPTIVERSE, ORIGA, PROFET, PRO-SIL, PrimePACK, QUADFALC, RASIC, ReverSave, SatRIC, SCEPTRE, SCOUT, S-GOLD, SensoNor, SEROCCO, SICOFI, SIEGET, SINDRION, SLIC, SMARTi, SmartLEWIS, SMINT, SOCRATES, TEMPFET, thinq!, TrueNTRY, TriCore, TRENCHSTOP, VINAX, VINETIC, VIONTIC, WildPass, X-GOLD, XMM, X-PMU, XPOSYS, XWAY. Other Trademarks AMBA, ARM, MULTI-ICE, PRIMECELL, REALVIEW, THUMB of ARM Limited, UK. AUTOSAR is licensed by AUTOSAR development partnership. Bluetooth of Bluetooth SIG Inc. CAT-iq of DECT Forum. COLOSSUS, FirstGPS of Trimble Navigation Ltd. EMV of EMVCo, LLC (Visa Holdings Inc.). EPCOS of Epcos AG. FLEXGO of Microsoft Corporation. FlexRay is licensed by FlexRay Consortium. HYPERTERMINAL of Hilgraeve Incorporated. IEC of Commission Electrotechnique Internationale. IrDA of Infrared Data Association Corporation. ISO of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB of MathWorks, Inc. MAXIM of Maxim Integrated Products, Inc. MICROTEC, NUCLEUS of Mentor Graphics Corporation. Mifare of NXP. MIPI of MIPI Alliance, Inc. MIPS of MIPS Technologies, Inc., USA. murata of MURATA MANUFACTURING CO. OmniVision of OmniVision Technologies, Inc. Openwave Openwave Systems Inc. RED HAT Red Hat, Inc. RFMD RF Micro Devices, Inc. SIRIUS of Sirius Sattelite Radio Inc. SOLARIS of Sun Microsystems, Inc. SPANSION of Spansion LLC Ltd. Symbian of Symbian Software Limited. TAIYO YUDEN of Taiyo Yuden Co. TEAKLITE of CEVA, Inc. TEKTRONIX of Tektronix Inc. TOKO of TOKO KABUSHIKI KAISHA TA. UNIX of X/Open Company Limited. VERILOG, PALLADIUM of Cadence Design Systems, Inc. VLYNQ of Texas Instruments Incorporated. VXWORKS, WIND RIVER of WIND RIVER SYSTEMS, INC. ZETEX of Diodes Zetex Limited. Last Trademarks Update Application Note AN221 3 Revision 1.0,

4 Table of Contents Table of Contents Table of Contents List of Figures List of Tables Introduction External LNA and Diplexer Schematic Bill of Material Power Consumption Measurements Gain Measurement Noise Figure Measurement IP3 Measurement S-Parameters Measurement PCB and Layout Appendix 1: ESD protection circuit for system level ESD robustness References Authors Application Note AN221 4 Revision 1.0,

5 List of Figures List of Figures Figure 1 External LNA and Diplexer Schematic Figure 2 Gain Set-Up Figure 3 Gain Figure 4 Noise Figure Measurement Set-up Figure 5 Noise Figure Figure 6 IP 3 Measurement Set-up Figure 7 IP3 Measurement Results Figure 8 S-Parameter Measurement Set-up Figure 9 S-Parameters Measurement Results with 2.8 V Figure 10 S-Parameters Measurement Results with 3.3 V Figure 11 S-Parameters Measurement Results with TUA Figure 12 Application board with Tuner IC Figure 13 PCB area of Figure 14 Layout of the BFR380 PCB Figure 15 ESD test pulse according to system level specification IEC Contact Discharge 15kV 16 Figure 16 Smart 2-step ESD protection approach based on external and internal ESD protection structure 17 Figure 17 Standard ESD protection with optional ESD resistor, blocking capacitor and a serial inductor Application Note AN221 5 Revision 1.0,

6 List of Tables List of Tables Table 1 Bill of material Table 2 Power Consumption Application Note AN221 6 Revision 1.0,

7 Introduction 1 Introduction This document provides information and measurement results of the external LNA including Diplexer designed for TV tuner ICs (e.g.tua 9001).The DVB-T signal from the antenna is amplified and then separated with a diplexer for the VHF and UHF inputs of the tuner IC. The BFR380 application provides a excellent compromise between good noise performance and appropriate Intermodulation capability, and this combined with an outstanding cost / performance ratio. 1.1 External LNA and Diplexer Schematic Figure 1shows the schematic of the external LNA including the VHF / UHF Diplexer. This was designed to use the Infineon Tuner IC TUA9001 with a single antenna input. C nF Vcc 2.8 L nH R Ω R104 15Ω R105 22Ω TR1 C108 39p RFin R101 35k C p L n C102 1n LNA1 B C E C105 2p7 C106 22p L103 39n L104 47n C107 15p TR2 C109 39p C110 1n C111 1n UHF Tuner IC TUA9001 VHF A ppl_ckt380.vsd R103 2R2 C103 68p Figure 1 External LNA and Diplexer Schematic 1.2 Bill of Material In Table 1 the BOM (bill of material) of the application is shown. The components with their function is the circuitry are described. Table 1 Bill of material Component Value Manufacturer/Type Function C p Various / 0402 DC blocking L nh Murata / LQW15 Protection R101 35k Various / 0402 Biasing Application Note AN221 7 Revision 1.0,

8 Introduction Table 1 Bill of material (cont d) Component Value Manufacturer/Type Function C102 1 nf Various / 0402 feedback R Various / 0402 feedback R Ω Various / 0402 Emitter biasing L nh Murata / LQW15 RF choke C103 68p Various / 0402 Emitter? C n Various / 0402 DC blocking R Ω Various / 0402 Stability R Ω Various / 0402 Stability C p Various / 0402 Diplexer L103 39n Murata / LQW15 Diplexer C106 22p Various / 0402 Diplexer L104 47nH Murata / LQW15 Diplexer C107 15p Various / 0402 Diplexer Tr1 Murata Conversion single ended to balanced TR2 Murata Conversion single ended to balanced C108 39p Various / 0402 DC blocking C109 39p Various / 0402 DC blocking C110 1n Various / 0402 DC blocking C111 1n Various / 0402 DC blocking 1.3 Power Consumption Table 2 shows the power consumption of the external LNA for 2.8 V and 3.3 V supply. Table 2 Power Consumption Voltage Current Power 2.8V 13.6mA 37.5mW 3.3V 16.8mA 55.4mW Application Note AN221 8 Revision 1.0,

9 Measurements 2 Measurements For the measurements a TUA9001 daughter board was modified with VHF and UHF Test Points. To get real 50 Ohm the line to the baluns was cut and the test equipment was connected via a semirigid line. 2.1 Gain Measurement Figure 2 describes the test set-up of the gain measurement. The input loss pad is an attenuator to make a suitable 50 Ohm matching at the RF input of the daughter board. Signal generator Spectrum Analyser RF Input Loss Pad DUT VHF Test Point and UHF Test Point TUA900 x_er_gain_setup.vsd Figure 2 Gain Set-Up In the diagram Figure 3 the result for VHFand UHF are shown. All cable losses and the in- and output losses are compensated. Gain Ext LNA Gain [db] V 2.2V Frequency [MHz] TUA9001_extLNA_Gain.vsd Figure 3 Gain Application Note AN221 9 Revision 1.0,

10 Measurements 2.2 Noise Figure Measurement In Figure 4 the test set-up for the noise figure measurement is shown. The noise source is an 15 db ENR device and the measurement is done according the y-method with a noise figure meter. Noise Figure Meter VHF Test Point and UHF Test Point Noise source DUT TUA900x_ER_noise_setup.vsd Figure 4 Noise Figure Measurement Set-up The results for VHF and UHF are shown in Figure 5 Noise Figure Ext LNA Noise Figure [db] V 3.3V Frequency [MHz] TUA9001_ extlna_nf.vsd Figure 5 Noise Figure Application Note AN Revision 1.0,

11 Measurements 2.3 IP3 Measurement The set-up for the Intermodulation measurement for the 3rd order products is shown in Figure 6. Signal generators Spectrum Analyser combiner RF Input Input Loss Pad DUT VHF Test Point and UHF Test Point TUA900x_ER_IP3_setup.vsd Figure 6 IP 3 Measurement Set-up With our automatic test software the IM3 product of both sides are measured, compared and the worse result is taken for the IIP3 calculation. The results of IP3 products are shown calculated as input intermodulation point 3th order (IIP3)in Figure 7 IIP3 Ext LNA IIP3 [dbm] V 2.8V Frequency [MHz] TUA9001_extLNA_IP3.vsd Figure 7 IP3 Measurement Results Application Note AN Revision 1.0,

12 Measurements 2.4 S-Parameters Measurement In Figure 8 the test set-up for the S-Parameter measurement is shown. Network Analyzer DUT VHF Test Point (UHF open) and UHF Test Point (VHF open) TUA900x_ER_spara_setup.vsd Figure 8 S-Parameter Measurement Set-up The results of 2.8 V are shown in Figure 9 and the results of 3.3 V are shown in Figure 10. VHF S-Parameter S21, S11, S22 UHF S-Parameter S21, S11, S22 Figure 9 S-Parameters Measurement Results with 2.8 V Application Note AN Revision 1.0,

13 Measurements VHF S-Parameter S21, S11, S22 UHF S-Parameter S21, S11, S22 Figure 10 S-Parameters Measurement Results with 3.3 V The results of S11 for VHF and UHF with attached TUA9001 at 2.8 V are shown in Figure 11. VHF S-Parameter S11 UHF S-Parameter S11 Figure 11 S-Parameters Measurement Results with TUA9001 Application Note AN Revision 1.0,

14 PCB and Layout 3 PCB and Layout The PCB is realized as a RF daughter board, which can be connected to a base board. This gives the flexibility to operate different RF boards with the same base board. InFigure 12 the complete evaluation kit for the Tuner IC TUA9001 is shown. TUA9001_daughter_base.vsd Figure 12 Application board with Tuner IC In Figure 13 an excerpt of the LNA and diplexer area of the PCB is high lightened. Figure 13 PCB area of The layout of the PCB is shown in Figure 14 Application Note AN Revision 1.0,

15 PCB and Layout Figure 14 Layout of the BFR380 PCB Application Note AN Revision 1.0,

16 Appendix 1: ESD protection circuit for system level ESD robustness Appendix 1: ESD protection circuit for system level ESD robustness Introduction With the advancement in miniaturization of semiconductor structures, ESD handling capability of the devices is becoming a concern. Increasing ESD handling capability of the I/O ports costs additional chip size and affects the I/O capacitance significantly. This is very important for high frequency devices, especially when high linearity is required. Therefore, tailored and cost effective ESD protection devices can be used to build up an ESD protection circuit. To handle ESD events during assembly, devices normally have on-chip ESD protection according to the device level standards e.g. Human Body Model JEDEC 22-A-115. To fulfill the much more stringent system level ESD requirements according to IEC as shown in Figure 15, the external ESD protection circuit has to handle the majority of the ESD strike. The best external ESD protection is achieved using a TVS diode assisted by additional passive components. Figure 15 ESD_current, A m6 m7 m8 Reference Pulse 15kV contact discharge according IEC time, nsec m6 time= 1.507nsec ESD_current=57.68 A m7 time= 30.01nsec ESD_current=29.43 A m8 time= 60.01nsec ESD_current=15.18 A ESD_Pulse.vsd ESD test pulse according to system level specification IEC Contact Discharge 15kV Some examples of RF applications addressed by the Infineon ESD protection proposal are given below: FM Radio (76 MHz -110 MHz) Portable TV ( , MHz) WLAN b/g/n (2.4 GHz, Tx ~ +20 dbm) Bluetooth (2.4 GHz, Tx ~ +20 dbm) Automatic Meter Reading, AMR (900 MHz, TX ~ +20 dbm) Remote Keyless Entry, RKE (315 MHz MHz MHz MHz, Tx~13 dbm) GPS (1575 MHz, Rx only but can be affected by RF interferer) For an ESD protection device tailored for medium power RF signals (=< +20 dbm), following requirements are essential: 1. RF requirements a) Bidirectional characteristic to handle DC free signals without clipping / signal distortion b) A highly symmetrical behavior of the ESD device for positive and negative voltage swings is mandatory to keep the power level of even Harmonics low c) Breakdown voltage of 5 V-10V, to avoid signal distortion at high RF voltage swing applied at the TVS diode, located close to the antenna d) High linearity e) Low leakage current and stable diode capacitance vs. RF voltage swing f) Ultra low diode capacitance is mandatory 2. ESD requirements: Application Note AN Revision 1.0,

17 Appendix 1: ESD protection circuit for system level ESD robustness a) Lowest dynamic resistance R dyn to offer best protection for the RFIC; R dyn is characterized by Transmission Line Pulse (TLP) measurement b) Very fast switch-on time (<<1nsec) to ground the initial peak of an ESD strike according to IEC c) No performance degradation over a large number of ESD zaps (>1000 Two-step ESD Protection approach General structure for a 2-step ESD approach according to Figure 16 enables to split the entire ESD current between the internal and external ESD protection device. The external device is much more robust and handles the majority of the ESD current. To avoid any impact on the RF behavior of the system and to minimize non linearity effects, the TVS diode should possess an ultra low device capacitance. Therefore the bi-directional (symmetrical) Infineon TVS Diode ESD0P2RF is well suited, which provides a diode capacitance as low as 0.2 pf and a R dyn of only 1 Ohm. ESD robustness can be improved one step more by adding a small serial resistor between the external TVS diode and the RF amplifier input. A resistor of ~2.2 Ohm is a good compromise between additional ESD performance and insertion loss. The TVS diode ESD0P2RF in combination with the 2.2 Ohm ESD resistor would incur less than 0.23dB insertion loss up to 3 GHz. OUT + Vcc LNA/ Switch/ Filter Residual ESD current External ESD Pprotection ESD current ESD strike Internal ESD protection V_Clamp Internal PCB line or Resistor U_clamp extern Main ESD current PCB- line ESD_protection_1.vsd Figure 16 Smart 2-step ESD protection approach based on external and internal ESD protection structure For further ESD improvement it is highly recommend to add a serial capacitor (C1). The capacitor cuts off most of the high energy created by the ESD strike. For better ESD robustness, C1 should be as small as possible, but has to match to the intended application frequency as well. For a broadband ESD protection (80MHz 3GHz) C1 should be about 100pF 150pF. Optional matching can be implemented with a serial inductor L1 for a dedicated frequency. In combination with L1, C1 can be reduced significantly which improves the ESD performance. OUT + Vcc LNA/ Switch/ Filter Internal ESD Protection RF IC input C1 optional L1 RX antenna ESD_ resistor ESD Diode Figure 17 ESD_protection_2.vsd Standard ESD protection with optional ESD resistor, blocking capacitor and a serial inductor Application Note AN Revision 1.0,

18 References References [1] Datasheet, Infineon Technologies AG. Authors 1. Ralph Kuhn, Senior Staff Application Engineer of the Business Unit RF and Protection Devices 2. K.H. Lee, Infineon Korea 3. Thomas Hieble,Verification Engineer of Business Unit Wireless Solutions 4. Alexander Glas,Senior Staff Application Engineer of the Business Unit RF and Protection Devices Application Note AN Revision 1.0,

19 Published by Infineon Technologies AG AN1221