Power Management & Multimarket

Transcription

1 TVS Diodes Transient Voltage Suppressor Diodes TVS3V3L4U Low Capacitance ESD / Transient / Surge Protection Array TVS3V3L4U Data Sheet Revision 2.4, Final Power Management & Multimarket

2 Edition Published by Infineon Technologies AG Munich, Germany 213 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

3 Revision History: Rev Page or Item Subjects (major changes since previous revision) Revision 2.4, Halogen free deleted Trademarks of Infineon Technologies AG AURIX, BlueMoon, COMNEON, C166, CROSSAVE, CanPAK, CIPOS, CoolMOS, CoolSET, CORECONTROL, DAVE, EasyPIM, EconoBRIDGE, EconoDUAL, EconoPACK, EconoPIM, EiceDRIVER, EUPEC, FCOS, HITFET, HybridPACK, ISOFACE, I²RF, IsoPACK, MIPAQ, ModSTACK, my-d, NovalithIC, OmniTune, OptiMOS, ORIGA, PROFET, PRO-SIL, PRIMARION, PrimePACK, RASIC, ReverSave, SatRIC, SIEGET, SINDRION, SMARTi, SmartLEWIS, TEMPFET, thinq!, TriCore, TRENCHSTOP, X-GOLD, XMM, X-PMU, XPOSYS. Other Trademarks Advance Design System (ADS) of Agilent Technologies, AMBA, ARM, MULTI-ICE, PRIMECELL, REALVIEW, THUMB of ARM Limited, UK. AUTOSAR is licensed by AUTOSAR development partnership. Bluetooth of Bluetooth SIG Inc. CAT-iq of DECT Forum. COLOSSUS, FirstGPS of Trimble Navigation Ltd. EMV of EMVCo, LLC (Visa Holdings Inc.). EPCOS of Epcos AG. FLEXGO of Microsoft Corporation. FlexRay is licensed by FlexRay Consortium. HYPERTERMINAL of Hilgraeve Incorporated. IEC of Commission Electrotechnique Internationale. IrDA of Infrared Data Association Corporation. ISO of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB of MathWorks, Inc. MAXIM of Maxim Integrated Products, Inc. MICROTEC, NUCLEUS of Mentor Graphics Corporation. Mifare of NXP. MIPI of MIPI Alliance, Inc. MIPS of MIPS Technologies, Inc., USA. murata of MURATA MANUFACTURING CO., MICROWAVE OFFICE (MWO) of Applied Wave Research Inc., OmniVision of OmniVision Technologies, Inc. Openwave Openwave Systems Inc. RED HAT Red Hat, Inc. RFMD RF Micro Devices, Inc. SIRIUS of Sirius Sattelite Radio Inc. SOLARIS of Sun Microsystems, Inc. SPANSION of Spansion LLC Ltd. Symbian of Symbian Software Limited. TAIYO YUDEN of Taiyo Yuden Co. TEAKLITE of CEVA, Inc. TEKTRONIX of Tektronix Inc. TOKO of TOKO KABUSHIKI KAISHA TA. UNIX of X/Open Company Limited. VERILOG, PALLADIUM of Cadence Design Systems, Inc. VLYNQ of Texas Instruments Incorporated. VXWORKS, WIND RIVER of WIND RIVER SYSTEMS, INC. ZETEX of Diodes Zetex Limited. Last Trademarks Update FinalData Sheet 3 Revision 2.4,

4 Low Capacitance ESD / Transient / Surge Protection Array 1 Low Capacitance ESD / Transient / Surge Protection Array 1.1 Features ESD/Transient/Surge protection according to: IEC (ESD): ±3 kv air/contact discharge IEC (EFT): ±8A (5/5ns) IEC (Surge): ±2 A (8/2 μs) Reverse working voltage maximum: V RWM =3.3V Low leakage current: I R <5nA Low capacitance: C L = 2 pf typ. (I/O to GND), 1 pf typ. (I/O to I/O) Low clamping voltage: V CL = 7.7 V 2 A (8/2 μs) Pb-free (RoHS compliant) package 1.2 Application Examples 1/1/1 Ethernet 4 lines uni-directional (Pin 2 to GND) 2 lines bi-directional (Pin 2 n.c.) 1.3 Product Description Pin 6 Pin 5 Pin 4 Pin 5 Pin 1 Pin 3 n.c. Pin 4 Pin 6 Pin 1 Pin 2 Pin 3 a) Pin configuration b) Schematic diagram Figure 1-1 Pin configuration and Schematic diagram Pin 2 GND TVS3V3L4U_PinConf_and_SchematicDiag1.vsd Table 1-1 Ordering Information Type Package Configuration Marking code TVS3V3L4U SC74 4 lines, uni-directional or 2 lines, bidirectional E1s FinalData Sheet 4 Revision 2.4,

5 Electrical Characteristics 2 Electrical Characteristics 2.1 Maximum Ratings Table 2-1 Maximum Ratings at T A = 25 C, unless otherwise specified Parameter Symbol Values Unit Min. Typ. Max. ESD discharge 1) air contact V ESD -3-3 Peak pulse current (t P =8/2μs) 2) I PP -2 2 A Peak pulse power P PK W t P =8/2μs 2) 154 t P = 1 ns 3) 144 Operating temperature T OP C Storage temperature T stg C 1) V ESD according to IEC ) I PP according to IEC P PK is calculated by I PP x V CL. 3) Please refer to AN21[1]. P PK is calculated by I TLP x V CL. 3 3 kv Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. FinalData Sheet 5 Revision 2.4,

6 Electrical Characteristics 2.2 DC Characteristics Figure 2-1 Definitions of electrical characteristics Table 2-2 DC Characteristics at T A = 25 C, unless otherwise specified Parameter Symbol Values Unit Note / Min. Typ. Max. Test Condition Reverse working voltage V RWM 3.3 V Reverse current I R 5 na V R =3.3V 2.3 RF Characteristics Table 2-3 Parameter Line capacitance I/O to GND I/O to I/O RF Characteristics at T A = 25 C, unless otherwise specified Symbo l C L Values Unit Note / Test Condition Min. Typ. Max pf V R =V, f =1MHz FinalData Sheet 6 Revision 2.4,

7 Electrical Characteristics 2.4 ESD Characteristics Table 2-4 Parameter ESD Characteristics at T A = 25 C, unless otherwise specified Reverse clamping voltage 1) I/O to GND I/O to GND I/O to GND I/O to GND I/O to GND Reverse clamping voltage 2) I/O to GND Forward clamping voltage 1) GND to I/O GND to I/O Symbo l V CL V FC Values Unit Note / Test Condition Min. Typ. Max R Dynamic resistance 1) Ω I/O to GND DYN.15 t p = 8/2μs Dynamic restiance 2) I/O to GND.9 t p =1ns 1) I PP according to IEC ) Please refer to Application Note AN21 [1]. TLP parameter: Z =5Ω, t p = 1ns, t r = 3ps, averaging window: t 1 =3ns to t 2 = 6 ns, extraction of dynamic resistance using least squares fit of TLP characteristics between I PP1 = 1 A and I PP2 =4A Forward clamping voltage 2) GND to I/O 3.1 V V t p = 8/2μs I PP =1A I PP =5A I PP =1A I PP =15A I PP =2A t p = 1ns I PP =16A PP t p = 8/2μs I PP =1A I PP =2A t p =1ns I PP =16A FinalData Sheet 7 Revision 2.4,

8 Typical Characteristic 3 Typical Characteristic C L [pf] V R [V] Figure 3-1 Line capacitance C L = f(v R ) I F [A] V F [V] Figure 3-2 Forward characteristic, I F = f(v F ) FinalData Sheet 8 Revision 2.4,

9 Typical Characteristic I R [A] V R [V] Figure 3-3 Reverse current, I R = f(v R ) 1-7 I R [A] T A [ C] Figure 3-4 Reverse current I R = f(t A ), V R =3.3V FinalData Sheet 9 Revision 2.4,

10 Typical Characteristic I PP [A] Figure 3-5 Pulse reverse current (IEC61-4-5) versus clamping voltage, I PP = f(v CL ) I PP [A] Figure 3-6 Pulse forward current (IEC61-4-5) versus clamping voltage, I PP = f(v CL ) FinalData Sheet 1 Revision 2.4,

11 Typical Characteristic TVS3V3L4U R DYN 4 I TLP [A] R DYN =.85Ω Equivalent V IEC [kv] V TLP [V] Figure 3-7 TLP characteristics, reverse pulse TVS3V3L4U R DYN 4 I TLP [A] R DYN =.117Ω Equivalent V IEC [kv] V TLP [V] Figure 3-8 TLP characteristics, forward pulse FinalData Sheet 11 Revision 2.4,

12 Typical Characteristic t p [ns] t p [ns] Figure 3-9 Clamping voltage at +8 kv contact discharge according IEC (R =33Ω, C = 15 pf) t p [ns] t p [ns] Figure 3-1 Clamping voltage at -8 kv contact discharge according IEC (R =33Ω, C =15pF) FinalData Sheet 12 Revision 2.4,

13 Typical Characteristic t p [ns] t p [ns] Figure 3-11 Clamping voltage at +15 kv contact discharge according IEC (R =33Ω, C = 15 pf) t p [ns] t p [ns] Figure 3-12 Clamping voltage at -15 kv contact discharge according IEC (R =33Ω, C = 15 pf) FinalData Sheet 13 Revision 2.4,

14 Package Information 4 Package Information 2.9 ±.2 (2.25) B (.35) MAX ±.1 ±.1 ±.1 Pin 1 marking M B 6x M.1 MAX. A 1.6 A SC74-PO V4 Figure 4-1 SC74 Package outline SC74-FPR V4 Figure 4-2 SC74 Footprint (Reflow Soldering) MIN Transport direction.95 SC74-FPW V4 Figure 4-3 SC74 Footprint (Reflow Soldering) Pin 1 marking SC74-TP Figure 4-4 SC74 Packing FinalData Sheet 14 Revision 2.4,

15 References References [1] Infineon AG - Application Note AN21: Effective ESD Protection Design at System Level using VF-TLP Characterization Methodology [2] Infineon AG - Recommendations for PCB Assembly of Infineon TSLP and TSSLP Packages FinalData Sheet 15 Revision 2.4,

16 Published by Infineon Technologies AG