STTH2R02. Ultrafast recovery diode. Main product characteristics. Features and benefits. Description. Order codes DO-15 STTH2R02QRL SMA STTH2R02A

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1 STTH2R2 Ultrafast recovery diode Main product characteristics I F(V) 2 V RRM 2 V T j (max) V F (typ) 175 C.7 V K t rr (typ) 15 ns Features and benefits Very low conduction losses Negligible switching losses K DO-15 STTH2R2Q Low forward and reverse recovery times High junction temperature Description The STTH2R2 uses ST's new 2 V planar Pt doping technology, and it is specially suited for switching mode base drive and transistor circuits. Packaged in DO-15, SM, and SMB, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection. K SM STTH2R2 K SMB STTH2R2U Order codes Part Number STTH2R2Q STTH2R2QRL STTH2R2 STTH2R2U Marking STTH2R2 STTH2R2 R2 R2U October 26 Rev 2 1/9

2 Characteristics STTH2R2 1 Characteristics Table 1. bsolute ratings (limiting values at T j = 25 C, unless otherwise specified) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 2 V DO-15 (1) t p = 5 µs, F = 5 khz I FRM Repetitive peak forward current 6 SM, SMB I F(RMS) RMS forward current DO-15 SM, SMB 6 I F(V) verage forward current, δ =.5 DO-15 T lead = 9 C SM, SMB T c = 9 C 2 I FSM Surge non repetitive forward current t p = 1 ms Sinusoidal 75 T stg Storage temperature range -65 to C T j Maximum operating junction temperature 175 C 1. On infinite heatsink with 1 mm lead length Table 2. Thermal parameters Symbol Parameter Value Unit R th(j-c) Junction to case SM, SMB 3 Junction to lead Lead Length = 1 mm on infinite heatsink DO C/W Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ Max. Unit I R (1) Reverse leakage current T j = 25 C 3 V R = V RRM T j = 125 C 2 2 µ T j = 25 C I F = V F (2) Forward voltage drop T j = 25 C T j = 1 C I F = V T j = 15 C Pulse test: t p = 5 ms, δ < 2 % 2. Pulse test: t p = 38 µs, δ < 2 % To evaluate the conduction losses use the following equation: P =.68 x I F(V) +.6 I F 2 (RMS) 2/9

3 STTH2R2 Characteristics Table 4. Dynamic characteristics Symbol Parameter Test conditions Min. Typ Max. Unit t rr Reverse recovery time I F = 1, di F /dt = -5 /µs, V R = 3 V, T j = 25 C I F = 1, di F /dt = -1 /µs, V R = 3 V, T j = 25 C ns I RM Reverse recovery current I F = 2, di F /dt = -2 /µs, V R = 16 V, T j = 125 C 3 4 t fr Forward recovery time I F = 2, di F /dt = 1 /µs V FR = 1.1 x V Fmax, T j = 25 C 4 ns V FP Forward recovery voltage I F = 2, di F /dt = 1 /µs, T j = 25 C 2. V Figure 1. Peak current versus duty cycle Figure 2. Forward voltage drop versus forward current (typical values) 1 I M () T 5 I FM () I M 8 d=tp/t δ=tp/t tp P = 5 W P = 2 W P = 1 W δ 2 T j =15 C 1 V FM(V) Figure 3. Forward voltage drop versus forward current (maximum values) Figure 4. Relative variation of thermal impedance junction to case versus pulse duration (SM) 5 4 I FM () Z th(j-a) /R th(j-a) 1. SM.9 S cu=1cm² T j =15 C V FM(V) Single pulse t P(s). 1.E-2 1.E-1 1.E+ 1.E+1 1.E+2 1.E+3 3/9

4 Characteristics STTH2R2 Figure 5. Relative variation of thermal impedance junction to case versus pulse duration (SMB) Figure 6. Relative variation of thermal impedance junction to case versus pulse duration (DO-15) Z th(j-a) /R th(j-a) 1. SMB.9 S cu =1cm² Single pulse.1 t P(s). 1.E-3 1.E-2 1.E-1 1.E+ 1.E+1 1.E+2 1.E+3 Z th(j-a) /R th(j-a) 1. DO-15.9 Lleads=1mm Single pulse t P(s). 1.E-3 1.E-2 1.E-1 1.E+ 1.E+1 1.E+2 1.E+3 Figure 7. Junction capacitance versus reverse applied voltage (typical values) Figure 8. Reverse recovery charges versus di F /dt (typical values) 1 C(pF) F=1MHz V osc =3mV RMS 6 5 Q RR (nc) I F =2 V R =16V 4 T j =125 C V R(V) di F/dt(/µs) Figure 9. Reverse recovery time versus di F /dt (typical values) Figure 1. Peak reverse recovery current versus di F /dt (typical values) 6 5 t RR (ns) I F =2 V R =16V 6 5 I RM () I F =2 V R =16V T j =125 C 3 T j =125 C di F/dt(/µs) di F/dt(/µs) /9

5 STTH2R2 Ordering information scheme Figure 11. Dynamic parameters versus junction temperature Figure 12. Thermal resistance, junction to ambient, versus copper surface under each lead - SM/SMB (epoxy FR4, e cu = 35 µm) Q RR ;I RM [T j ]/Q RR ;I RM [T j =125 C] I F =2 V R =16V 12 1 R th(j-a) ( C/W) SM I RM 8 6 SMB.4 Q RR 4.2 T j( C) S CU(cm²) L Figure 13. Thermal resistance, junction to ambient, versus copper surface under each lead DO-15 (epoxy FR4, e cu = 35 µm) R th(j-a) ( C/W) DO-15 1 S CU(cm²) Ordering information scheme STTH 2 R 2 XXX Ultrafast switching diode verage forward current 2 = 2 Model R Repetitive peak reverse voltage 2 = 2 V Package Q = DO-15 in mmopack QRL = DO-15 in Tape and reel = SM in Tape and reel U = SMB in Tape and reel 5/9

6 Package information STTH2R2 3 Package information Epoxy meets UL94, V Table 5. DO-15 Dimensions C C REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max D B B C D Table 6. SM dimensions DIMENSIONS REF. Millimeters Inches Min. Max. Min. Max b c E E D L Figure 14. SM footprint (dimensions in mm) /9

7 STTH2R2 Package information Table 7. SMB dimensions E1 REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. D b E c c 1 E E L 2 b D L Figure 15. SMB footprint (dimensions in mm) In order to meet environmental requirements, ST offers these devices in ECOPCK packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPCK is an ST trademark. ECOPCK specifications are available at: 7/9

8 Ordering information STTH2R2 4 Ordering information Part Number Marking Package Weight Base qty Delivery mode STTH2R2Q STTH2R2 DO-15.4 g 1 mmopack STTH2R2QRL STTH2R2 DO-15.4 g 6 Tape and reel STTH2R2 R2 SM.68 g 5 Tape and reel STTH2R2U R2U SMB.12 g 25 Tape and reel 5 Revision history Date Revision Description of Changes 3-May-26 1 First issue 13-Oct-26 2 Maximum T j set to 175 C for all packages in Table 1. 8/9

9 STTH2R2 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. ll ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS ND CONDITIONS OF SLE ST DISCLIMS NY EXPRESS OR IMPLIED WRRNTY WITH RESPECT TO THE USE ND/OR SLE OF ST PRODUCTS INCLUDING WITHOUT LIMITTION IMPLIED WRRNTIES OF MERCHNTBILITY, FITNESS FOR PRTICULR PURPOSE (ND THEIR EQUIVLENTS UNDER THE LWS OF NY JURISDICTION), OR INFRINGEMENT OF NY PTENT, COPYRIGHT OR OTHER INTELLECTUL PROPERTY RIGHT. UNLESS EXPRESSLY PPROVED IN WRITING BY N UTHORIZED ST REPRESENTTIVE, ST PRODUCTS RE NOT RECOMMENDED, UTHORIZED OR WRRNTED FOR USE IN MILITRY, IR CRFT, SPCE, LIFE SVING, OR LIFE SUSTINING PPLICTIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FILURE OR MLFUNCTION MY RESULT IN PERSONL INJURY, DETH, OR SEVERE PROPERTY OR ENVIRONMENTL DMGE. ST PRODUCTS WHICH RE NOT SPECIFIED S "UTOMOTIVE GRDE" MY ONLY BE USED IN UTOMOTIVE PPLICTIONS T USER S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. ll other names are the property of their respective owners. 26 STMicroelectronics - ll rights reserved STMicroelectronics group of companies ustralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of merica 9/9

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