POWER GOLD FOR 175 C Tj-max

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1 POWER GOLD FOR 175 C Tj-max James J. Wang and Bob Baird Motorola Inc. Tempe, Arizona USA James.J.Wang@motorola.com ABSTRACT Automotive is requesting engine control IC to operate in 145 C ambient. Power Gold technology can allow ICs to operate hotter. Since more power dissipates from molded package and across FR4 board with ICs at 175 C Tj-max instead of at present 125 C or 150 C, Power Au technology enhances power product. Continuous, reliable 175 C Tjmax operation is achieved with Power Au. Top silicon metallization and wire bond pads are gold. Gold process integrates with wafer flow having aluminum interconnect layers underneath the top Power Au layer. Thick Power Au carries current, minimizes electromigration through thinner aluminum bus and provides an oxide free pad for Au wire bonding. Both Au ball bonding speed and ball shear strength improve with gold bond pads over conventional aluminum bond pads. Gold to gold wire joints are impervious to halides and do not corrode at high temperature. Rough gold surface adheres to mold compounds and survives MSL1 preconditioning and autoclave without delamination over die surface. Power Au allows SMARTMOS product to survive 4000 hours of high temperature bake at 190 C and 1500 cycles of air to air temperature cycling from 65 C to 175 C. Although only few selected packages are tested, results suggest Power Au is compatible to standard molded packages. Package Theta-jc remains same; nevertheless, power capability increases when silicon junctions operate at 175 C. Circuit boards also dissipate more power. Power Au cost for 8 wafers is comparable to one layer of aluminum plus ILD. Introduction of Power Au onto ICs improves power plus reliability of packaging. Key words: Power gold, power IC, Tjmax, 175C, Au-Au bond. BACKGROUND Gold wire bonding to aluminum bond pads is common IC practice. Au-Al metallurgy is reliable and is suitable for applications up to 150 C IC junction temperature. At higher silicon junction temperature of 175 C, Au-Al intermetallics formation limits IC operation to about 1000 hours [1]. To operate reliably at 175 C Tj-max longer than 1000 hours, monometallic aluminum wedge bonding to aluminum bond pads is practiced on discrete power semiconductors and low I/O count power ICs. However, because 1 mil to 2 mils diameter aluminum wedge bonding is rare, wedge bond option is not available for mainstream molded packages. Switching from gold ball bonding over to aluminum wedge bonding on existing 100 I/Os packaging line is costly, requires pad layout design change and then the exposed thin aluminum wires and aluminum bond pads are still susceptible to corrosion. Better package reliability is achieved with Power Au as top metal. Au ball bonding to Power Au like Al-Al is also monometallic that is not susceptible to intermetallics formation. Furthermore, Au-Au bonds never corrode and remain ductile and strong even within mold compounds that contain moisture and trace corrosive halides. Electroplating thick gold on silicon wafers is available in mass production with excess capacity. Power Au process can be integrated onto ICs fabrication flow as one additional interconnect layer or as replacement to top aluminum or copper layer. Power Gold top layer covers over exposed aluminum or copper pads and present a superior bond pad surface to Au wire bonding. Power Au allows some ICs currently limited to 150 C Tj-max to be suitable for 175 C applications inside the same over molded package. Gold top wafer metallurgy had been practiced in the past. With exception of GaAs and TAB, gold had been replaced by aluminum interconnects and then by advanced copper interconnects. Lower material cost plus ultra-fine line capabilities of both aluminum and copper were reasons for the displacement of gold as interconnect. However, to enter high temperature IC applications, to achieve superior reliability or to dissipate greater power, the resurrection of gold as the top metal is both practical and effective. This protective gold top is coined Power Au for the ability of gold to increase power capabilities of ICs, packages and systems. INTRODUCTION Power Au improves not just package and system but also enhances IC devices. Improvements as current carrying capacity for electromigration ruggedness, low Ron output devices and metal debiasing are not detailed in this paper. Neither are high temperature device issues as junction leakage, HCI, transient energy capability, device temperature coefficient, and hot testing of ICs addressed. Device characterization and test issues need to be addressed to create reliable products at 175 C. This paper presents Power Au and its broad effectiveness to improve power plus reliability of semiconductor ICs within conventional over molded packages.

2 POWER AT HIGHER Tj-max As more functionality is integrated into same die size, power density rises with advanced ICs. Industry has improved interconnects, devices, packages, and FR4 boards to both minimize ohmic heat generation and to dissipate generated heat quickly and thereby keeping IC chip temperature below 150 C. To reduce device Ron, to cut junction leakages and to decrease metal resistances all help to minimize heat generation within ICs. Package with exposed heat sink pad, thermal vias drilled through boards, and cooling fins help to dissipate heat from IC into surrounding ambient. As one explores options and associated costs, also consider increasing junction temperature and allowing greater power dissipation through natural heat conduction. ICs are limited to maximum power, P, by thermal dissipation performance of package and board, Θja, and temperature difference between Tjmax to the surrounding ambient temperature, T amb. P = (Tjmax T amb ) / Θja (1) Many low power applications, T amb is near room temperature. But for automotive applications, T amb is at 95 C for behind the dashboard ICs and rising as control modules are tightly crammed under the dashboards. For lack of space behind dashboard, some electronic modules are already forced under the hood where T amb rises up to 125 C. New demand for engine control IC with direct engine mount is specifying even hotter T amb. If radiator fluid were used as coolant, T amb is 130 C. Engine lubricant oil as IC coolant raises T amb above 140 C. With higher temperature ambient, 175 C Tj-max is better suited. Even at modest T amb, the benefit of hotter Tj-max can be significant. Designers may consider hotter operating Tjmax to avoid using costly packaging with low Θjc or to minimize boards requiring thermal vias or cooling metal chassis. Benefit derived with 175 C Tj-max is universal because increased power dissipation through wider delta T is independent of both package type and board selection. Power dissipation gain % Temperature ambient - C Figure 1. Power dissipation improvement at 175 C Tj-max over 150 C versus T amb. Power dissipation gain achieved with 175 C Tj-max over 150 C is calculated from equation 1 and plotted as figure 1. As an example, with T amb at 105 C, 56% more power is dissipated from packaging plus board if Tj-max were increased from 150 C to 175 C. CORROSION RESISTANCE Aluminum is relatively resistant to corrosion with its naturally protective Al 2 O 3 oxide. With care during shipping finished wafers, dry storage, wet sawing process, using low halides mold compound, the semiconductor industry has nearly eliminated corrosion for applications up to 150 C. Nevertheless, exposed, 0.6 microns thin, aluminum bond pads are still susceptible to corrosion. Moisture, trace contaminants and higher operating die temperature accelerate the corrosion of unpassivated aluminum pads. Corrosion is a complex interaction of factors plus test conditions and many models have been created to fit data obtained with mold encapsulated packages. Models to estimate the time to failure (TF) of aluminum bond pads due to corrosion contain a scale factor (B 0 ), the effect of moisture (RH), and applied test voltage function f(v). And, all models contain the same temperature based Arrhenius exponential factor [3]. Preference of corrosion model is not important to estimate the acceleration factor (AF) due to an increase in chip temperature from T 1 =150 C to T 2 = 175 C (448 K). Using exponential corrosion model as an example: TF = B 0 exp[(-a)rh] f(v) exp[e a /kt] (2) With Eyring assumption of independent variables built into constants and into models as equation 2 and accepting industry consensus for the activation energy (E a ) of aluminum corrosion in the range from 0.7 to 0.8 ev then: AF = exp[(e a /k) (1/T 1 1/T 2 )] = 3.2 (3) Boltzmann s constant k = 8.62E-5 ev/ K. Applying E a = 0.75 ev, bond pad aluminum corrosion is approximately 3x faster if Tj-max rises by 25 C to 175 C. Corrosion damage currently below detection can become a problem with slightly higher temperature application. Sb 2 O 3 as flame retardant in mold compound dissolves with moisture and its ions then catalyze the corrosion of aluminum. Organic bromine compounds form voids similar to Au-Al bonds exposed to halides together with moisture. Bromine, when liberated at higher temperatures, can be responsible for 'dry-corrosion', contrary to corrosion in presence of moisture. All types of corrosion problems are resolved with a corrosion resistant top layer of Power Au. Gold is most noble metal with standard oxidation potential at 1.50V. Power Au cap over exposed aluminum bond pads or smaller aluminum contacts prevents possibility of aluminum corrosion. Wire bonding is then to the Power Au pads. Corrosion from moisture plus trace contaminants

3 within mold compounds are eliminated without employing hermetic packaging. was noted after high temperature bake. Au-Au wire bond interface appears to improve slightly with thermal anneal. GOLD ALUMINUM INTERMETALLICS Au wire bonded to aluminum forms many Au-Al intermetallics. This interdiffusion of Au atoms into Al bond pads is well studied [1-2]. At higher temperature, diffusion and growth rate of intermetallics also accelerate. If the entire thickness of aluminum bond pad were converted into Au 4 Al intermetallic, then the poor adhesion of Au 4 Al to barrier metal between aluminum layers can result in wire bond separation and electrically open failure. Even as Au 4 Al intermetallic is growing, Kirkendall s voids coalesce into hairline crack at intermetallics interface. These weakened interfaces are susceptible to stress failure and again result in electrically open failure. Resistance (Ohms) Cycles (-65C to 175C) Al/Au Daisy Chain Au line Extensive historical testing is represented by time to failure of Au wire bond to aluminum as represented on figure 2. When compounded by aluminum corrosion, the time to failure is even shorter. Under good conditions, lifespan of Au-Al wire bond is approximately 1000 hours at 175 C high temperature bake hours wire bond lifespan is too short for reliable automotive applications. Time (hours) Au/Power Au Au/Al Figure 3. Au wire bond to Power Au with contacts to Al daisy chain test structure and to gold serpentine lines. Slight package resistance reduction is detected during preconditioning stressing followed by 1500 cycles of air to air temperature cycling. The metal between Power Au and Al is not a perfect barrier however. Under higher temperature testing, barrier metal does eventually break down. Above 250 C plus self heating from 860mA current, gold atoms punch through the barrier metal and then gold diffuse into aluminum. Rapid diffusion of Au into Al forms visible purple plague within aluminum. Scanning electron microscopy show a void in the Power Au line immediately above contact to aluminum. Missing gold has diffused down into the aluminum. Voiding in Power Au line leads eventually to electrically open failure. Both selection and thickness of barrier metal can be optimized for even higher temperature applications Temperature (C) Figure 2. Lifespan to 0.1% wire bond failure Under Power Au, a high temperature barrier metal is first sputtered over aluminum. This barrier metal serves as seed metal for electroplating the thick Power Gold. Same seed metal remains in between gold and aluminum to act as diffusion barrier and prevents Au-Al intermetallic growth. Wire bonding to Power Au is more durable as compared to Au wire bonded directly to Al as intermetallic formation occurs naturally. After oven bake reliability testing, Au to Power Au wire bond survives 4000 hours at a bake temperature of 190 C (figure 2). In comparison, Au-Al bond is projected to weaken after 440 hours. With Au wire bond to Power Au, contact resistance reduces with anneal during temperature cycling of packaged test structures (figure 3). Similar contact resistance reduction Au Au missing at contact Figure 4. Power Au line with void above contact to aluminum after extremely high temperature testing and 860mA current. Gold diffused into aluminum and left a void. Recrystallization of electroplated Au grain from heating is apparent in comparison to picture 5.

4 WIREBOND QUALITY Quality is many features combined into superior product. By most measurements, Au wire bond to Al is already good quality. Au wire bond to Power Au is even better than Au wire bond to Al. There is no passivation over Power Au. Therefore, no residual passivation film to hinder wire bonding. Sometimes, residual oxide passivation film or polyimide residue is still being attributed to poor wire bonds to aluminum. Included with the Power Au process is a sputter cleaning of aluminum pads before the seed metal sputter deposition. Wafer process sequence from sputter cleaning to seed metal deposition is completely within the same high vacuum chamber. Any thin film is sputtered off and thereby the clean aluminum surface forms a more intimate and consistent contact to the seed metal. Contact resistance between Power Au and aluminum is consistent even at small contact area. Power Au does not oxidize. Au-Au bonding does not need to scrub through an oxide film to form metallic bond. As a result of Power Au, bonding force and ultrasonic power of Au ball bond can be reduced. Even at lower bond force and US scrub power, Au wire to Power Au results in slightly better ball shear strength than Au to Al (210gm ball shear strength for 2 mil diameter Au wire versus same Au wire to Al pads average at 180gm). Au ball bonding can be optimized at lower bonding force and achieve good shear strength at faster bonding speed for throughput. Figure 5. Electroplated Power Au line PROBING ADVANTAGES Fine pitch wire bonding has not been tested. Because thick Power Au pads protrude above passivation instead of being recessed below passivation opening, bonding is easier with slightly finer pitch potential. Likewise, probing the protruding gold pads is easier than probing recessed aluminum pads. Over-travel of probe needles sometimes cracks edge of passivation, such probe damage is eliminated with probing on Power Au. Probing on oxide-less gold pads is consistent at elevated and cold temperatures. Repetitive probing of thick gold does not degrade subsequent wire bond. Power Au is more than 6x thicker than aluminum. Multiple probe tip touch-downs that wear through thinner aluminum pads do not degrade Power Au. High frequency wafer probing should yield favorable result; similar to probing of GaAs semiconductors with Au as top metal. MOLD COMPOUNDS For automotive ICs to operate up to 175 C Tj-max, over molded package must operate reliably under temperature swings from 50 C to 175 C. Commercial mold compounds are many. Glass transition temperature of mold compounds, Tg, vary from 100 C to above 175 C. Different mold compounds and different mold cure are implemented at each packaging facility. Changing mold compound to reduce stress or to minimize trace corrosive agent requires evaluations with potential production line disruption. Power Au appears to be suitable and compatible to even low Tg mold compounds. Since gold does not oxidize nor corrode, mold compounds tested under MSL1 plus autoclave do not corrode nor degrade Power Au. Glass transistion signifies the temperature at which cured mold compound s coefficient of thermal expansion increases abruptly. Using mold compound with low glass transition temperature, a higher shear stress accumulate on Au wires and on exposed Power Au lines encased within such molding. Mold compound induced stress potentially leads to mold compound delamination, cracking and wire tear. Power Au was stressed within a Sumitomo mold compound having measured Tg of 109 C (ramped from - 60 C to 175 C at 3 C per minute on T. A. Instruments Dynamic Mechanical Analyzer, DMA, and using 3-point bending clamp attachment. Samples were tested at 1 Hz.). With additional post cure bake at 175 C for 1 hour, the Tg of this mold compound increases to maximum of 131 C (DMA) or 132 C (measured using TMA method). Both the as received packages and added post cured packages were similarly preconditioned and then stress within air to air temperature cycling oven ( 65 C to 175 C). Excellent adhesion to the silicon die surface with Power Au is observed with both post cured and as received packages. Mold compound adheres extremely well to Power Au. Even with relatively low Tg mold compound under test, die surface delamination was not seen under scanning acoustic microscopy (figures 6 and 7).

5 surface. Only after prolonged stressing is second bond failure then noted. Limited results suggest Power Au can be applied with different mold compounds and within many types of packaging to achieve package reliability suitable for high temperature applications. Figure 6. Scanning acoustic microscopy of die surface after extensive reliability stressing. Delamination of mold compound is apparent around the die and at the leads. However, mold compound adhesion to Power Au is in tact. Figure 7. Larger Power Au bus features are visible on the surface of die under scanning acoustic imaging. Adhesion of mold compound to Power Au is excellent even after package had been subjected to MSL3 plus 1560 air to air temperature cycles and then followed by autoclave. The roughened surface of thick, electroplated Power Gold as seen on figure 5 is believed to contribute to superior mold compound adhesion. Adding Power Au technology, packaged die exhibits excellent resilience against mold compound delamination. Devices under electrical testing indicate no change to functional device parameterics and slightly lower wire bond contact resistance (figure 3). With good die to mold compound adhesion, CTE miss-match stress after extreme temperature cycling from 65 C to 175 C does not degrade first bonds nor damage exposed Power Au lines on the die COST Gold is expensive. However, the amount of gold plated as Power Au on the die surface is typically less than the amount of gold consumed by gold wires. Depending upon die size, die coverage by Power Au, diameter of Au wires and number of wires, total amount of gold employed varies. For smart power ICs, gold wires typically consume 3x more gold than electroplated Power Au. Although gold is expensive, its superior chemical, electrical and mechanical qualities are preferred both as wire material and as protective top surface metal over the silicon die. In comparison, the cost of Power Au is less significant than the cost of gold wires. With electroplated Power Au wafer fabrication, cost of gold is even less significant when compared to expensive wafer processing tools, chemicals, clean room facility and other fixed plus variable costs. Fortunately, electroplating gold on surface of silicon wafers is common wafer fabrication practice for low cost LCD driver IC. Gold is electroplated down to 60 microns pitch for tape automated bonding (TAB) and for chip on glass assembly. Because liquid crystal displays are universally used, subcontractors with gold plating production capacity are available. Many subcontractors are capable and willing to electroplate gold on other types of silicon wafers besides MOS LCD driver ICs. Multiple wafer plating subcontractors allow Power Au technology to be applied quickly and cost effectively. CONCLUSIONS Wire bond and package reliability are hurdles limiting ICs to 150 C Tj-max. The application of Power Au as top metallurgy for ICs eliminates wire bond intermetallics, corrosion and package mold stress effect. Since gold does not oxidize nor corrode, noble gold top metal is better suited against accelerated chemical reactions at higher temperatures. Power Au enables ICs to operate reliably at 175 C Tj-max. Power Au technology utilizes existing gold plating wafer fabrication facilities. The application of Power Au can be cost effective to improve reliability and or to achieve greater power dissipation. Power Au is compatible to many types of over-molded packaging and does not change the packaging process flow. Power Au is added on after completed wafer fab flow to prevent corrosion, to improve mold compound adhesion and to enhance overall package reliability. Improvements to both package and IC are so noticeable that Power Au technology is then retested at more stringent 175 C Tj-max applications. Power Au is suited for medium to power ICs and packages. And, if application is cost effective, Power Au may also be applied

6 within low power packaging to increase any IC s power dissipation. Packaging and assembly houses can consider adding Power Au over copper interconnects to allow standard gold ball bonding to advanced copper wafers. Power Au further improves device Ron, current capability, and reliability of packages. Improvement is even more significant if the IC is suitable for 175 C Tj-max operation. Power Au technology increases flexibility, quality, and capability simultaneously. ACKNOWLEDGEMENTS We like to thank Roland Kallstedt, Dianne White, Russell Shumway and Steve Ostrov for their expertise and help with the myriad of tests performed during development and to realize unique tests required by Power Au and by high temperature reliability testing. REFERENCES [1] Noolu, N., Klossner, M., Ely, K., Baeslack, W., Lippold, J., Elevated Temperature Failure Mechanisms in Au-Al Ball Bonds International Microelectronics and Packaging Society, IMAPS September 2002 Proceeding. [2] Tung, C.H., Sheng, G.T., Teo, P.S., Lo, M.C., Microstructure Studies of Under Bump Metallization Systems Using Transmission Electron Microscopy Conference Proceedings from 28 th International Symposium for Testing and Failure Analysis, November 2002, pp. 505 [3] Blish, R., Durrant, N., Semiconductor Device Reliability Failure Models, International SEMATECH technology transfer # A-XFR, May 31, 2000.

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