Curriculum Vitae of Dr. Francesco Iannuzzo, Ph.D. Associate Professor in Electronic Engineering

Curriculum Vitae of Dr. Francesco Iannuzzo, Ph.D. Associate Professor in Electronic Engineering Identity Name: Francesco Surname: Iannuzzo Date of birth: October 15, 1972 Nationality: Italian Country of residence: Italy Contact Details Office: +39.0776.299.3741 Mobile: +39.338.423.1838 Fax: +39.0776.1800.321 email: iannuzzo@unicas.it Skype: marte972 LinkedIn: http://it.linkedin.com/pub/francesco-iannuzzo/18/300/857/ ResearchGate: http://www.researchgate.net/profile/francesco_iannuzzo/ Affiliation: University of Cassino and southern Lazio Office Address: Via G. Di Biasio,43 03043 Cassino (FR) ITALY Home Address: Via S. Pasquale,36 03043 Cassino (FR) ITALY Qualifications - Degree in Electronic Engineering, cum laude, from the University of Naples, Italy, with a thesis on the lumped-charge modeling of power semiconductor devices, in March 1997. - Philosophiae Doctor in Electronics and Information Technology from the University of Naples, Italy, in November 2001, with a thesis on the modeling of failure mechanisms of power MOSFETs in critical conditions. Career - Associate Professor at the University of Cassino, Italy, July 2012 to present; - Assistant Professor at the University of Cassino, Italy, since September 2006; - Researcher at the University of Cassino, Italy since November 2000. Teaching activities - From 2002 to date: holder of the teachings of Digital Electronics and Electronics of Digital Communications, at master degree in Information Engineering and Telecommunications Engineering, respectively, at the University of Cassino; - Thesis supervisor and co-supervisor of over 100 thesis in Electronic Engineering, Electrical Engineering and Telecommunications Engineering on topics related to research topics of interest; Funded research projects - 1998 to 1999: Scientific Collaboration Agreement with the Department of Electronic Engineering - University of Naples "Federico II" on the "Development of new characterization techniques and diagnostic for devices and circuits".

- Participation in national and European research projects: the OP's "Plan to strengthen scientific and technological network" (Decree N.191 del 31/05/1999 Department of Development and Enhancement of Activity Research - formerly MURST) - Cluster 12: "Power and industrial electronics and traction applications" - Work-Package no. 4: "Study of Innovative converters for electric traction: models, compatibility, multimedia architectures and development environments by CALS Standard" (1999-2001). - Participation in national and European research projects: Research Contract between DAEIMI, University of Cassino, and the company Ansaldobreda Spa under the Fourth Framework Programme. Project title: "HIMRATE" (2000-2002); - Participation in national and European research projects: Research Contract between DAEIMI, University of Cassino, and the Italian Space Agency entitled " High efficiency switching Converters and innovative power devices for space applications" (2000-2003); - Participation in national and European research projects: Research Contract between DAEIMI, University of Cassino, and the company Ansaldobreda Spa under the P.O.N.(L.593/2000). Project title: "TEINTRE" (2002-2005); - Participation in national and European research projects: PRIN (Research Project of National Interest) 2004, year 2004/05 - National Coordinator: Prof. G.Busatto - entitled: " Switching Resonant Integrated DC / DC Converters for Distributed Power Systems" - Participation in national and European research projects: Research Contract between DAEIMI, University of Cassino, and the company Ansaldobreda Spa, entitled "Studies and qualifications of Presspack IGBT modules and high-voltage isolation", 2007-2008, included into the Ministry project named "INTERMOD"; - Participation in national and European research projects: PRIN (Research Project of National Interest) 2007, year 2008/10 - National Coordinator: Prof. P.Tenti - entitled: "Power supply in hostile environments: application to high energy physics experiments " - Partnership Activities: Promoter and responsible of the collaboration between the University of Cassino and Micron Inc., Boise, ID, USA., under which a PhD scholarship at the University of Cassino has been funded; Scientific communities - stable reviewer for IEEE Transactions on Industrial Electronics; - stable reviewer for Microelectronics Reliability, Elsevier B.V.; - referee for several specialist conferences: EPE, ISIE, ESREF Membership of scientific communities - Elevation to IEEE (Institute of Electrical and Electronics Engineers) senior member in 2012. - Member of IEEE since 2001. - Co-founder of the Italian IEEE EDS chapter. - Member of AEIT (Italian Federation of Electrical, Electronics, Automation, and Telecommunications) and AMES (Association for Technology of Microelectronics, Electronics and Semiconductors) since 2006.

Organization jobs - In 2012, participation to the organization of the 23rd ESREF conference (300 participants), as Technical Programme chair, Industrial exhibitor staff chief and web organizer. http://www.esref2012.unicas.it - In 2010, participation to the organization of the 21st ESREF conference (220 participants), as Technical Programme chair and web organizer. http://www.esref2010.unicas.it Main Collaborations - ECPE (European Centre for Power Electronics); - Ansaldobreda Spa; - ST Microelectronics; - Fairchild Semiconductor; - INFN (Istituto Nazionale di Fisica Nucleare); - Fermilab, Chicago. Peer-reviewed publications - Author of 36 publications in international journals and 31 international conference proceedings; - Co-author of 2 invited contributions. Research activities 1. Development and validation of simulation models with compact analytical approach "lumped-charge" for power electronic devices; 2. Study of reliability and non destructive characterization of power devices in extreme operating conditions (overload, short circuit, over temperature, very low temperature); 3. Study of mechanisms of instability of power electronic devices in critical conditions (2 nd Breakdown, latch-up, current crowding, avalanche condition) and drafting of related forecasting models; 3. Design and development of power converters, power pulse generators, and non destructive testers for power devices; 5. Study, simulation and optimization of new circuit topologies for series connection of power IGBT modules. Study about the optimization of IGBT commutation. EMI analysis and modeling in high power devices; 6. Study of the mechanisms of impact of cosmic particles of power devices and related modeling; 7. Programmable digital hardware for the innovative control of power electronic converters and custom non-destructive power device testing. Major achievements 2008 - I developed the original race-control algorithm for PRCP converters. References: [a19, b19]. 2004 - Together with my colleague, prof. Busatto, we developed the first lumped-charge model of IGBT devices. References: [a11, b06]. 2003 - Together with my colleagues Roncella, La Capruccia, Busatto and Velardi, we developed an integrated MAGFET sensor, aimed to measure very fast current transients of power devices. References: [a08, b09].

1999 - Together with my colleague, prof. Busatto, we developed the first lumped-charge model of GTO devices. References: [a02, b01, b02, b05]. 2002 to present Together with my group of Electronics at the University of Cassino and southern Lazio, I contributed to evidence, to model and to improve the power devices' robustness to burnout/rupture from cosmic rays. References: [a04, a05, a07, a10, a14, a16, a21, a23, a25, a26, a30, a32, a33, b04, b07, b08, b10, b12, b20, b22, b25, b27, b28]. 2002 to present Together with my group of Electronics at the University of Cassino and southern Lazio, I contributed to develop an original non-destructive technique for power device testing. References: [a06, a13, a20, a22, a24, a28, a31, a34, b11, b14]. As minor activities, I can evidence the modeling of MOSFET rupture under reverse recovery stresses to the internal diode [a01, a03, a17, b03], the reliability study of series connection of power IGBTs [a18, a27, b16, b24], the study of EMI emissions of power converters [a12, a15, b15, b17, b18, b21], a collaboration with a project on the development of future distributed power supplies for high-energy physics at LHC [a29, a35, a36], and other various works [a09, b13, b23, b26, b29, b30, b31].

Appendix: Publication list A. papers on international journals a1. G. Busatto, G.V. Persiano, F. Iannuzzo, Experimental and numerical investigation on MOSFET s failure during reverse recovery of its internal diode, IEEE Trans. Electron Devices, Vol. ED-46, No.6, pp. 1268-1273, 1999. a2. F. Iannuzzo, G.Busatto, A lumped charge model for GTOs suitable for circuit simulation Microelectronics Journal Volume 30, no. 6, pp. 543-550, 1999. a3. F. Iannuzzo, G.V.Persiano, G.Busatto, Measurement of the BJT activation current during the reverse recovery of power MOSFET s drain-source diode IEEE Trans. on Electron Devices, Vol. 48, n. 2, pp. 391-393, febbraio 2001. a4. G.Busatto, F. Iannuzzo, F.Velardi, J.Wyss Non-Destructive Tester for Single Event Burnout of Power Diodes Microelectronics Reliability, Vol. 41, n. 9-10, pp. 1725-1729, settembre-ottobre 2001. a5. F. Velardi, F. Iannuzzo, G. Busatto, J. Wyss, A. Kaminksy, The Reliability of New Generation Power MOSFETs in Radiation Environment, Microelectronics Reliability, Vol. 42, pp.1629-1634, settembre-ottobre 2002. a6. G. Busatto, B. Cascone, L. Fratelli, M. Balsamo, F. Iannuzzo, F. Velardi Non_Destructive High Temperature Characterisation of High-Voltage IGBTs Microelectronics Reliability, Vol. 42, pp.1635-1640, settembre-ottobre 2002. a7. F. Velardi, F. Iannuzzo, G. Busatto, J. Wyss, A. Candelori, Experimental Study of Charge Generation Mechanisms in Power MOSFETs due to Energetic Particle Impact, Microelectronics Reliability, Vol. 43/4, pp.549-555, aprile 2003. a8. G. Busatto, R. La Capruccia, F. Iannuzzo, F. Velardi, R. Roncella MAGFET Based Current Sensing for Power Integrated Circuit, Microelectronics Reliability, Vol. 43/4, pp.577-583, aprile 2003. a9. G. Busatto, F. Iannuzzo, F. Velardi, M.Valentino, G.P.Pepe Non-Destructive Detection of Current Distribution in Power Modules based on Pulsed Magnetic Measurement, Microelectronics Reliability, Vol. 43/7-10, pp.1907-1912, ottobre 2003. a10. F. Velardi, F. Iannuzzo, G. Busatto, J. Wyss, A. Sanseverino, A. Candelori, G. Currò, A. Cascio, F. Frisina Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment, Microelectronics Reliability, Vol. 43/7-10, pp.1847-1851, ottobre 2003. a11. F. Iannuzzo, G.Busatto, Physical CAD Model for High-Voltage IGBTs Based on Lumped-Charge Approach, IEEE Transaction on Power Electronics, Volume: 19, Issue: 4, July 2004, Pages:885 893. a12. G. Busatto, L. Fratelli, C. Abbate, R. Manzo, F. Iannuzzo, Analysis and optimisation through innovative driving strategy of high power IGBT performances/emi reduction trade-off for converter systems in railway applications, Microelectronics Reliability,

Volume 44, Issues 9-11, 2004, Pages 1443-1448, ISSN 0026-2714, DOI: 10.1016/j.microrel.2004.07.071. a13. F. Iannuzzo; Non-destructive Testing Technique for MOSFET s Characterisation during Soft-Switching ZVS Operations, Microelectronics Reliability, Vol.45, pp. 1738-1741, 2005. a14. G. Busatto, A. Porzio, F. Velardi, F. Iannuzzo, A. Sanseverino, G. Currò; Experimental and Numerical investigation about SEB/SEGR of Power MOSFET, Microelectronics Reliability, Vol.45, pp. 1711-1716, 2005. a15. C. Abbate, G. Busatto, L. Fratelli, F. Iannuzzo, The high frequency behaviour of high voltage and current IGBT modules, Microelectronics Reliability, Volume 46, Issues 9-11, September-November 2006, Pages 1848-1853. a16. G. Busatto, F. Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi, G. Currò, Experimental study of power MOSFET s gate damage in radiation environment, Microelectronics Reliability, Volume 46, Issues 9-11, September-November 2006, Pages 1854-1857. a17. F. Iannuzzo, G. Busatto, C. Abbate, Investigation of MOSFET failure in soft-switching conditions, Microelectronics Reliability, Volume 46, Issues 9-11, September- November 2006, Pages 1790-1794. a18. C. Abbate, G. Busatto, L. Fratelli, F. Iannuzzo, B. Cascone, R. Manzo, The robustness of series-connected high power IGBT modules, Microelectronics Reliability, Volume 47, Issues 9-11, September-November 2007, Pages 1746-1750. a19. F. Iannuzzo, Race-Control Algorithm for the Full-Bridge PRCP Converter Using Cost- Effective FPGAs, IEEE Transactions on Industrial Electronics, Volume 55, Issue 4, April 2008 Page(s): 1519-1526. a20. F. Iannuzzo, High Performance, FPGA-based Test Apparatus for Unclamped Inductive Switching of IGBTs, Microelectronics Reliability 48 (2008), pp. 1449-1452. DOI information: 10.1016/j.microrel.2008.07.025. a21. G. Busatto, G. Currò, F. Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi, Experimental Evidence of Latent Gate Oxide Damages in Medium Voltage Power MOSFET as a Result of Heavy Ions Exposure, Microelectronics Reliability 48 (2008), pp. 1306-1309. DOI information: 10.1016/j.microrel.2008.07.030. a22. G. Busatto, C. Abbate, B. Abbate, F. Iannuzzo, IGBT Modules Robustness During Turn-Off Commutation, Microelectronics Reliability 48 (2008), pp. 1435-1439. DOI information: 10.1016/j.microrel.2008.07.027. a23. G. Busatto, G. Currò, F. Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi, Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions, Microelectronics Reliability, Volume 49, Issues 9-11, 2009, Pages 1033-1037, ISSN 0026-2714, DOI: 10.1016/j.microrel.2009.07.012. a24. G. Busatto, C. Abbate, F. Iannuzzo, P. Cristofaro, Instable mechanisms during unclamped operation of high power IGBT modules, Microelectronics Reliability, Volume 49, Issues 9-11, 2009, Pages 1363-1369, ISSN 0026-2714, DOI: 10.1016/j.microrel.2009.07.026.

a25. G. Busatto, G. Curro, F. Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi, Heavy ions induced single event gate damage in medium voltage power MOSFETs, IEEE Transactions on Nuclear Science, Volume: 56, Issue: 6, Part: 2, 2009, Page(s): 3573 3581. DOI: 10.1109/TNS.2009.2032397. a26. G. Busatto, G. Curro, F. Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi, Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET, Microelectronics Reliability, Volume 50, Issues 9-11, September-November 2010, Pages 1842-1847, ISSN 0026-2714, DOI: 10.1016/j.microrel.2010.07.039. a27. C. Abbate, G. Busatto, F. Iannuzzo, "High-Voltage, High-Performance Switch Using Series-Connected IGBTs, IEEE Transactions on Power Electronics, Volume: 25, Issue: 9, 2010, Page(s): 2450 2459, DOI: 10.1109/TPEL.2010.2049272. a28. C. Abbate, G. Busatto, F. Iannuzzo, IGBT RBSOA non-destructive testing methods: Analysis and discussion, Microelectronics Reliability, Volume 50, Issues 9-11, September-November 2010, Pages 1731-1737, ISSN 0026-2714, DOI: 10.1016/j.microrel.2010.07.050. a29. P. Tenti, G. Spiazzi, S. Buso, M. Riva, P. Maranesi, F. Belloni, P. Cova, R. Menozzi, N. Delmonte, M. Bernardoni, F. Iannuzzo, G. Busatto, A. Porzio, F. Velardi, A. Lanza, M. Citterio and C. Meroni, "Power supply distribution system for calorimeters at the LHC beyond the nominal luminosity", Journal of Instrumentation, Volume 6, June 2011, DOI: 10.1088/1748-0221/6/06/P06005. a30. G. Busatto, D. Bisello, G. Currò, P. Giubilato, F. Iannuzzo, S. Mattiazzo, D. Pantano, A. Sanseverino, L. Silvestrin, M. Tessaro, F. Velardi, J. Wyss, "A new test methodology for an exhaustive study of single-event-effects on power MOSFETs", Microelectronics Reliability, Volume 51, Issues 9-11, September-November 2011, Pages 1995-1998, ISSN 0026-2714, DOI: 10.1016/j.microrel.2011.07.023. a31. C. Abbate, G. Busatto, F. Iannuzzo, "Operation of SiC normally-off JFET at the edges of its safe operating area", Microelectronics Reliability, Volume 51, Issues 9-11, September-November 2011, Pages 1767-1772, ISSN 0026-2714, DOI: 10.1016/j.microrel.2011.07.055. a32. L. Silvestrin, D. Bisello, G. Busatto, P. Giubilato, F. Iannuzzo, S. Mattiazzo, D. Pantano, A. Sanseverino, M. Tessaro, F. Velardi, J. Wyss. A time-resolved IBICC experiment using the IEEM of the SIRAD facility. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2012, vol. 273; p. 234-236, ISSN: 0168-583X, doi: 10.1016/j.nimb.2011.07.083 a33. G. Busatto, V. De Luca, F. Iannuzzo, A. Sanseverino, F. Velardi, "Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure", Microelectronics Reliability, Vol. 52, Issues 9-10, Pages 2363-2367, September- October 2012. http://dx.doi.org/10.1016/j.microrel.2012.06.153. a34. C. Abbate, G. Busatto, F. Iannuzzo, "Unclamped repetitive stress on 1200 V normallyoff SiC JFETs", Microelectronics Reliability, Volume 52, Issues 9-10, Pages 2420-2425, September-October 2012. http://dx.doi.org/10.1016/j.microrel.2012.06.097.

a35. S. Baccaro, G. Busatto, M. Citterio, P. Cova, N. Delmonte, F. Iannuzzo, A. Lanza, M. Riva, A. Sanseverino, G. Spiazzi "Reliability oriented design of power supplies for high energy physics applications", Microelectronics Reliability, Vol. 52, Issues 9-10, pp. 2465-2470, September-October 2012. http://dx.doi.org/10.1016/ j.microrel.2012.06.088. a36. M. Alderighi, M. Citterio, M. Riva, S. Latorre, Costabeber, A. Paccagnella, F. Sichirollo, G. Spiazzi, M. Stellini, P. Tenti, P. Cova, N. Delmonte, A. Lanza, M. Bernardoni, R. Menozzi, S. Baccaro, F. Iannuzzo, A. Sanseverino, G. Busatto, V. De Luca, F. Velardi, Power converters for future LHC experiments, Journal of Instrumentation, Vol. 7, March 2012, pp. 1-15. ISSN: 1748-0221, doi: 10.1088/1748-0221/7/03/C03012. B Contributions to international conferences b1. G.Busatto, F. Iannuzzo, L.Fratelli, PSPICE model for GTOs Proc. SPEEDAM 98, pp. P2,5-10, giugno 1998, Sorrento, Italia. b2. F. Iannuzzo, G.Busatto, A circuit model for GTOs based on lumped charge approach, Proc. 4th International Seminar on Power Semiconductors, ISPS '98, pp. 83-88, settembre 1998, Praga, Repubblica Ceca. b3. G.V.Persiano, F. Iannuzzo, G.Busatto, P.Spirito, Numerical Analysis of the Activation of the Parasitic BJT during the Reverse Recovery of Power MOSFET Internal Diode Proc. 8th European Conference on Power Electronics and Applications, EPE '99 b4. G.Busatto, F. Iannuzzo, J.Wyss, D.Pantano, D.Bisello, Effects of heavy ion impact on power diodes Proc. RADECS'99-5th Radiation and its effects on components and Systems, pp. F.35-37, 1999 b5. F. Iannuzzo, G.Busatto, A general methodology for circuit simulation of high-voltage power devices Proc. SPEEDAM 2000, pp. A3,25-31, giugno 2000, Ischia, Italia. b6. G.Busatto, F. Iannuzzo, P.Grimaldi, Lumped Charge PSPICE Model for High Voltage IGBTs Proc. IEEE Industry Applications Society Meeting, IAS 2000, ottobre 2000, Roma, Italia b7. F. Velardi, F. Iannuzzo, G. Busatto, J. Wyss, A. Sanseverino, An Experimental Classification of Drain and Gate Current Pulses in Low-Voltage Power MOSFETs During Radiation Exposure, Proc. of Radiation Effects on Components and Systems Conference, pp. 187-190, Padova, 19-20 settembre 2002. b8. F. Velardi, F. Iannuzzo, G. Busatto, J. Wyss, A. Candelori, Experimental Study of Charge Generation Mechanisms in Power MOSFETs due to Energetic Particle Impact, Proc. of International Seminar on Power Semiconductors, pp. 75-80, Praga 4-6 settembre 2002. b9. G. Busatto, R. La Capruccia, F. Iannuzzo, F. Velardi, R. Roncella, An On-Chip Non Invasive Integrated Current Sensing Proc. of International Seminar on Power Semiconductors, pp. 135-142, Praga 4-6 settembre 2002.

b10. F. Velardi, F. Iannuzzo, G. Busatto, J. Wyss, A. Sanseverino, A. Candelori, G. Currò, A. Cascio, F. Frisina, A. Cavagnoli, Effect of the Epitaxial Layer Features on the Reliability of Medium Blocking Voltage Power VDMOSFET during Heavy Ion Exposure Proc. RADECS 2003-8th Radiation and its effects on components and Systems, Settembre 2003. b11. G. Busatto, C. Abbate, B. Cascone, R. Manzo, L. Fratelli, G. Giannini, F. Iannuzzo, F. Velardi, Characterisation of High-Voltage IGBT Modules at High Temperature and High Currents Proc. of PEDS 2003, Novembre 2003. b12. G. Busatto, A. Cascio, G. Currò, F. Frisina, F. Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi, Cosmic ray effects on power MOSFET, Proc. SPEEDAM 2004, Capri, Italy, 2004, pages: 643-647. b13. C. Abbate, G. Busatto, L. Fratelli, F. Iannuzzo, R. Manzo, Innovative driving strategies for new generation high power igbt modules, Proc. SPEEDAM 2004, Capri, Italy, pages: 699-703. b14. Abbate, C.; Busatto, G.; Manzo, R.; Fratelli, L.; Cascone, B.; Giannini, G.; Iannuzzo, F.; Experimental optimisation of high power IGBT modules performances working at the edges of their safe operating area, Power Electronics Specialists Conference, 2004. PESC 04, Volume 4, 2004 Page(s):2588-2592. b15. Busatto, G.; Abbate, C.; Fratelli, L.; Iannuzzo, F.; Giannini, G.; Cascone, B.; EMI Analysis in High power Converters for Traction Application, Power Electronics and Applications, 2005 European Conference on, 11-14 Sept. 2005 Page(s):P.1 - P.9. b16. Abbate, C.; Busatto, G.; Fratelli, L.; Iannuzzo, F.; Cascone, B.; Giannini, G.; Series Connection of High Power IGBT modules for traction applications, Power Electronics and Applications, 2005 European Conference on, 11-14 Sept. 2005 Page(s):P.1 - P.8 b17. C. Abbate, G. Busatto, L. Fratelli, F. Iannuzzo: The Role of IGBT Module in Electromagnetic Noise Emission of Power Converters, ESREF 2005, 10-14 October 2005, Arcachon, France. b18. G. Busatto, C. Abbate, F. Iannuzzo, L. Fratelli, B. Cascone, G. Giannini: EMI Characterisation of high power IGBT modules For Traction Application Power Electronics Specialists Conference, 2005, PESC 05, Record 36th, pp. 2180-2186, Recife - Brazil. b19. F. Iannuzzo: FPGA implementation of the race-control algorithm for the full-bridge passive resonant commutated poles converter, Proc. of the 32nd IEEE Industrial Electronics Society Annual Conference, IECON 2005, 6-10 Nov. 2005, Raleigh, NC, USA. b20. A. Porzio, G. Busatto, F. Velardi, F. Iannuzzo, A. Sanseverino, G. Currò, Experimental and 3D Simulation Study on the Role of the Parasitic BJT Activation in SEB/SEGR of Power MOSFET Proc. 8th Radiation and its effects on components and Systems, RADECS 2005 - Settembre 2005, Cap d Agde France. b21. C. Abbate, G. Busatto, L. Fratelli, F. Iannuzzo: Experimental - Simulative procedure to Predict the EMI Generated in High Power Converters based on IGBT modules Proc. 4th International Conference on Integrated Power Systems, CIPS 2006, 7-9 June, 2006, pp. 117-122, Naples Italy.

b22. G. Busatto, G. Currò, F. Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi: Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET s in Radiation Environment Proc. 8th Radiation and its effects on components and Systems, RADECS 2006 - Settembre 2006, Athens, Greece. b23. C. Abbate, G. Busatto, F. Iannuzzo, L. Fratelli, Experimental characterisation of high efficiency resonant gate driver circuit, Proc. 12th European Conference on Power Electronics and Applications, EPE '07, Aalborg, Denmark. b24. G. Busatto, C. Abbate, F. Iannuzzo, B. Abbate, L. Fratelli, B. Cascone, R. Manzo, High Voltage, High Performance Switch using Series Connected IGBTs, Proceedings of the 39th IEEE Power Electronics Specialists Conference, PESC 08, June 15-19, 2008, Rhodes, Greece. b25. G. Busatto, G. Currò, F. Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi, Heavy ions induced single event gate damages in medium voltage power MOSFET, Proceedings of the IEEE Nuclear and Space Radiation Effects Conference, NSREC 08, July 14-18, 2008, Tucson, Arizona, USA. b26. E. La Marra, F. Iannuzzo, M. Di Zenzo, V. Micali, G. Valeri, D. Bianco, G. Busatto, Experimental Analysis of Energy Consumption by MobileDDR Memory for Mobile Applications, Proc. of the IEEE International Symposium on Industrial Electronics ISIE 08, June 30-July 2, 2008, Cambridge, UK. b27. G. Busatto, G. Currò, F. Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi, The role of the charge generated during heavy ion irradiation in the gate damage of medium voltage power MOSFET, Proceedings of the 9th European Workshop on Radiation Effects on Components and Systems, RADECS 2009, September 14-18, Bruges, Belgium. b28. G. Busatto, F. Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi, G.Currò, "Induced Damages in Power MOSFETs after Heavy Ions Irradiation", Proceedings of the 11th Conference on Astroparticle, Particle, Space Physics, Detectors and Medical Physics Applications, ICATPP'09, Villa Olmo, Como 5-9 October 2009. b29. Abbate, C.; Busatto, G.; Iannuzzo, F.;, "The effects of the stray elements on the failure of parallel connected IGBTs during Turn-Off," Power Electronics and Applications, 2009. EPE '09. 13th European Conference on, vol., no., pp.1-9, 8-10 Sept. 2009. b30. C. Abbate, G. Busatto, F. Iannuzzo, C. Pagliarone, G.M. Piacentino, F. Bedeschi, Comparison among eligible topologies for MARX klystron modulators, Proc. 1st International Particle Accelerator Conference, IPAC 10, pp. 3284-3286, Kyoto Japan. (ISBN 978-92-9083-352-9). b31. C. Ronsisvalle, V. Enea, C. Abbate, G. Busatto, F. Iannuzzo, A. Sanseverino, G.A.P. Cirrone. Effects of back-side He irradiation on MOS-GTO performances. In: IEEE 23rd International Symposium on Power Semiconductor Devices and ICs - ISPSD2011. San Diego, CA - USA, 23-26 May 2011, New York - USA: IEEE, p. 144-147, ISBN/ISSN: 9781424484256, doi: 10.1109/ISPSD.2011.5890811

C. Invited contributions c1. C. Abbate, G. Busatto, F. Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi, S. Baccaro, invited, "Radiation effects on power semiconductor devices for distributed power systems for electromagnetic calorimeters" (Invited paper), Proceedings of the 11th Conference on Astroparticle, Particle, Space Physics, Detectors and Medical Physics Applications, ICATPP 09, Villa Olmo, Como 5-9 October 2009. c2. G. Busatto, C. Abbate, F. Iannuzzo, Non Destructive SOA Testing of Power Modules (Invited paper), 6th International Conference on Integrated Power Electronics Systems, CIPS 2010, Nuremberg, Germany, March 16-18 2010.