STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF

STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF 600 V, 20 A very high speed trench gate field-stop IGBT Datasheet - production data TAB TAB Features Maximum junction temperature: T J = 175 C TO-220 1 2 3 TAB 1 D²PAK 3 Very high speed switching series Tail-less switching off Low saturation voltage: V CE(sat) = 1.8 V (typ.) @ I C = 20 A Tight parameters distribution Safe paralleling TO-247 3 2 1 TO-3P 1 2 3 Low thermal resistance Very fast soft recovery antiparallel diode Lead free package Figure 1. Internal schematic diagram Applications Photovoltaic inverters Uninterruptible power supply Welding Power factor correction Very high frequency converters Description Table 1. Device summary This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the "V" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive V CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Order code Marking Package Packaging STGB20V60DF GB20V60DF D²PAK Tape and reel STGP20V60DF GP20V60DF TO-220 Tube STGW20V60DF GW20V60DF TO-247 Tube STGWT20V60DF GWT20V60DF TO-3P Tube June 2013 DocID024360 Rev 3 1/23 This is information on a product in full production. www.st.com 23

Contents STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Contents 1 Electrical ratings............................................ 3 2 Electrical characteristics..................................... 4 2.1 Electrical characteristics (curves)............................. 6 3 Test circuits.............................................. 11 4 Package mechanical data.................................... 12 5 Packing mechanical data.................................... 20 6 Revision history........................................... 22 2/23 DocID024360 Rev 3

STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V CES Collector-emitter voltage (V GE = 0) 600 V I C Continuous collector current at T C = 25 C 40 A I C Continuous collector current at T C = 100 C 20 A I (1) CP Pulsed collector current 80 A V GE Gate-emitter voltage ±20 V I F Continuous forward current at T C = 25 C 40 A I F Continuous forward current at T C = 100 C 20 A I FP(1) Pulsed forward current 80 A P TOT Total dissipation at T C = 25 C 167 W T STG Storage temperature range - 55 to 150 C T J Operating junction temperature - 55 to 175 C 1. Pulse width limited by maximum junction temperature and turn-off within RBSOA Table 3. Thermal data Symbol Parameter Value Unit R thjc Thermal resistance junction-case IGBT 0.9 C/W R thjc Thermal resistance junction-case diode 2.08 C/W R thja Thermal resistance junction-ambient 50 C/W DocID024360 Rev 3 3/23

Electrical characteristics STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF 2 Electrical characteristics T J = 25 C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)CES Collector-emitter breakdown voltage (V GE = 0) I C = 2 ma 600 V V GE = 15 V, I C = 20 A 1.8 2.2 V CE(sat) V F Collector-emitter saturation voltage Forward on-voltage V GE = 15 V, I C = 20 A T J = 125 C V GE = 15 V, I C = 20 A T J = 175 C 2.15 2.3 I F = 20 A 1.7 2.2 V I F = 20 A T J = 125 C 1.55 V I F = 20 A T J = 175 C 1.3 V V GE(th) Gate threshold voltage V CE = V GE, I C = 1 ma 5 6 7 V I CES Collector cut-off current (V GE = 0) V CE = 600 V 25 μa I GES Gate-emitter leakage current (V CE = 0) V GE = ± 20 V 250 na V Table 5. Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit C ies Input capacitance - 2800 - pf C oes Output capacitance V CE = 25 V, f = 1 MHz, - 110 - pf C res V GE = 0 Reverse transfer capacitance - 64 - pf Q g Total gate charge - 116 - nc Q ge Gate-emitter charge V CC = 480 V, I C = 20 A, V GE = 15 V, see Figure 29-24 - nc Q gc Gate-collector charge - 50 - nc 4/23 DocID024360 Rev 3

STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Electrical characteristics Table 6. IGBT switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) Turn-on delay time - 38 - ns t r Current rise time - 10 - ns (di/dt) on Turn-on current slope - 1556 - A/μs V CE = 400 V, I C = 20 A, t d(off) Turn-off delay time - 149 - ns V GE = 15 V, t f Current fall time - 15 - ns see Figure 28 E (1) on Turn-on switching losses - 200 - μj E (2) off Turn-off switching losses - 130 - μj E ts Total switching losses - 330 - μj t d(on) Turn-on delay time - 37 - ns t r Current rise time - 12 - ns (di/dt) on Turn-on current slope - 1340 - A/μs V CE = 400 V, I C = 20 A, t d(off) Turn-off delay time di/dt = 1000 A/μs, - 150 - ns t f Current fall time V GE = 15 V, - 23 - ns T J = 175 C, see Figure 28 (1) E on Turn-on switching losses - 430 - μj E (2) off Turn-off switching losses - 210 - μj E ts Total switching losses - 640 - μj 1. Energy losses include reverse recovery of the diode. 2. Turn-off losses include also the tail of the collector current. Table 7. Diode switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit t rr Reverse recovery time - 40 - ns Q rr Reverse recovery charge - 320 - nc I rrm Reverse recovery current I F = 20 A, V R = 400 V, V GE = 15 V, see Figure 28-16 - A di rr/ /dt Peak rate of fall of reverse di/dt = 1000 A/μs recovery current during t b - 910 - A/μs E rr Reverse recovery energy - 115 - μj t rr Reverse recovery time - 72 - ns Q rr Reverse recovery charge I F = 20 A, V R = 400 V, - 930 - nc I rrm Reverse recovery current V GE = 15 V, - 26 - A di rr/ /dt T J = 175 C, see Figure 28 Peak rate of fall of reverse di/dt = 1000 A/μs recovery current during t b - 530 - A/μs E rr Reverse recovery energy - 307 - μj DocID024360 Rev 3 5/23

Electrical characteristics STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF 2.1 Electrical characteristics (curves) Figure 2. Power dissipation vs. case temperature Figure 3. Collector current vs. case temperature P tot (W) AM17175v1 I C (A) AM17174v1 160 40 140 35 120 30 100 25 80 20 60 15 40 10 20 5 0 0 25 50 75 100 125 150 175 T C ( C) 0 0 25 50 75 100 125 150 175 T C ( C) Figure 4. Output characteristics (T J = 25 C) Figure 5. Output characteristics (T J = 175 C) Ic (A) AM17171v1 Ic (A) AM17172v1 70 60 15 V 11 V 70 60 15 V 11 V 50 50 40 30 13 V 40 30 13 V 9 V 20 9 V 20 10 V GE =7 V 0 0 1 2 3 4 V CE (V) Figure 6. V CE(SAT) vs. junction temperature 10 V GE =7 V 0 0 1 2 3 4 V CE (V) Figure 7. V CE(SAT) vs. collector current V CE(sat) (V) 2.8 2.6 2.4 2.2 V GE = 15V I C 40A I C = 20A AM17176v1 V CE (V) 4.0 3.6 3.2 2.8 V GE =15V T J = 175 C T J = 25 C AM17177v1 2.0 2.4 1.8 1.6 I C = 10A 2.0 1.6 T J = - 40 C 1.4 1.2 1.2-50 -25 0 25 50 75 100 125 150 175 T J (ºC) 0.8 0 10 20 30 40 50 60 70 80 I C (A) 6/23 DocID024360 Rev 3

STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Electrical characteristics Figure 8. Collector current vs. switching frequency Figure 9. Forward bias safe operating area Ic [A] 70 Tc = 80 C AM17194v1 I C (A) AM17179v1 60 50 Tc = 100 C 10 10 μs 40 1 100 μs 30 1 ms 20 10 rectangular current shape, (duty cycle=0.5, Vcc= 400V Rg=4.7ohm,Vge=0/15V, Tj=175 C) 0.1 (single pulse T C =25 C, T J <=175 C; V GE =15 V) 0 1 10 f (khz) 0.01 1 10 100 V CE (V) Figure 10. Transfer characteristics Figure 11. Diode V F vs. forward current I C (A) AM17173v1 V F (V) AM17178v1 70 60 50 2.4 2-40 C 25 C 40 1.6 30 20 TJ=175 C 25 C -40 C 10 7 8 9 10 11 V GE (V) T =175 C 1.2 0.8 10 15 20 25 30 35 I F (A) J Figure 12. Normalized V GE(th) vs. junction temperature Figure 13. Normalized BV CES vs. junction temperature V GE(th) norm (V) 1.1 V = 5V GE AM17181v1 BVces norm (V) 1.1 AM17180v1 1.0 0.9 0.8 1.0 0.7 0.6-50 0 50 100 150 T J (ºC) 0.9-50 0 50 100 150 T J (ºC) DocID024360 Rev 3 7/23

Electrical characteristics STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Figure 14. Capacitance variations Figure 15. Gate charge vs. gate-emitter voltage C (pf) AM17183v1 V GE (V) AM17182v1 C ies 16 14 1000 12 C oes 10 C res 8 100 6 4 2 10 0.1 1 10 V CE (V) 0 0 25 50 75 100 125 Qg (nc) Figure 16. Switching losses vs. collector current Figure 17. Switching losses vs. gate resistance E (μj) 1000 800 V CC 400V, V GE = 15V, Rg=10Ω, T J = 175 C AM17185v1 E (μj) 700 V CC 400V, V GE = 15V, I C =20 A, T J = 175 C E ON AM17184v1 600 500 400 200 E ON E OFF 300 E OFF 0 0 10 20 30 40 Ic (A) 100 0 10 20 30 40 R G (Ω) Figure 18. Switching losses vs. junction temperature Figure 19. Switching losses vs. collector emitter voltage E (μj) AM17186v1 E (μj) AM17187v1 450 400 V CC 400V, V GE = 15V, I C = 20 A, Rg= 10 Ω 600 500 V GE = 15V, T J = 175 C I C = 20 A, Rg= 10 Ω 350 300 E ON 400 E ON 250 200 150 E OFF 300 200 E OFF 100 0 25 50 75 100 125 150 175 T J (ºC) 100 150 200 250 300 350 400 450 Vce (V) 8/23 DocID024360 Rev 3

STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Electrical characteristics Figure 20. Switching times vs. collector current Figure 21. Switching times vs. gate resistance ts (ns) V CC = 400V, V GE = 15V, Tj =175 C, Rg = 10 Ω t doff AM17188v1 ts (ns) V CC = 400V, V GE = 15V, Tj=175 C Ic = 40 A AM17189v1 t doff 100 t r t don 100 t don 10 10 t f t f t r 1 0 10 20 30 40 Ic (A) 1 0 10 20 30 40 Rg (Ω) Figure 22. Reverse recovery current vs. diode current slope Figure 23. Reverse recovery time vs. diode current slope I rm (A) 50 V r = 400V, I F = 20 A AM17190v1 trr (μs) 180 160 V r = 400V, I F = 20 A AM17191v1 40 30 175 C 140 120 100 175 ºC 20 25 C 80 60 10 0 0 500 1000 1500 2000 2500 di/dt (A/μs) 40 25 ºC 20 0 0 500 1000 1500 2000 2500 di/dt (A/μs) Figure 24. Reverse recovery charge vs. diode current slope Figure 25. Reverse recovery energy vs. diode current slope Qrr (nc) 1400 1200 V r = 400V,I F = 40 A 175 C AM17192v1 Err (μj) 800 700 V r = 400 V, I F = 20 A AM17193v1 1000 800 600 400 25 C 600 500 400 300 200 175 C 25 C 200 100 0 0 500 1000 1500 2000 2500 di/dt (A/μs) 0 0 500 1000 1500 2000 2500 di/dt (A/μs) DocID024360 Rev 3 9/23

Electrical characteristics STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF K Figure 26. Thermal data for IGBT δ=0.5 ZthTO2T_B 0.2 0.1 0.05 10-1 0.01 0.02 Zth=k Rthj-c δ=tp/t Single pulse 10-2 10-5 10-4 10-3 10-2 10-1 tp(s) tp t Figure 27. Thermal data for diode 10/23 DocID024360 Rev 3

STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Test circuits 3 Test circuits Figure 28. Test circuit for inductive load switching Figure 29. Gate charge test circuit Figure 30. Switching waveform AM01504v1 AM01505v1 Figure 31. Diode recovery time waveform 90% di/dt Qrr VCE VG IC Td(on) Ton Tr(Ion) Tr(Voff) Tcross Td(off) Tf Toff 10% 90% 10% 90% 10% IF IRRM ta trr tb IRRM t VF dv/dt AM01506v1 AM01507v1 DocID024360 Rev 3 11/23

Package mechanical data STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 8. TO-220 type A mechanical data Dim. mm Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 P 3.75 3.85 Q 2.65 2.95 12/23 DocID024360 Rev 3

STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Package mechanical data Figure 32. TO-220 type A drawing 0015988_typeA_Rev_S DocID024360 Rev 3 13/23

Package mechanical data STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Table 9. D²PAK (TO-263) mechanical data Dim. mm Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 10.40 E1 8.50 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R 0.4 V2 0 8 14/23 DocID024360 Rev 3

STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Package mechanical data Figure 33. D²PAK (TO-263) drawing 0079457_T Figure 34. D²PAK footprint (a) 16.90 12.20 5.08 1.60 9.75 3.50 Footprint a. All dimension are in millimeters DocID024360 Rev 3 15/23

Package mechanical data STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Table 10. TO-247 mechanical data Dim. mm. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 5.45 5.60 L 14.20 14.80 L1 3.70 4.30 L2 18.50 P 3.55 3.65 R 4.50 5.50 S 5.30 5.50 5.70 16/23 DocID024360 Rev 3

STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Package mechanical data Figure 35. TO-247 drawing 0075325_G DocID024360 Rev 3 17/23

Package mechanical data STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Table 11. TO-3P mechanical data Dim. mm Min. Typ. Max. A 4.60 5 A1 1.45 1.50 1.65 A2 1.20 1.40 1.60 b 0.80 1 1.20 b1 1.80 2.20 b2 2.80 3.20 c 0.55 0.60 0.75 D 19.70 19.90 20.10 D1 13.90 E 15.40 15.80 E1 13.60 E2 9.60 e 5.15 5.45 5.75 L 19.50 20 20.50 L1 3.50 L2 18.20 18.40 18.60 øp 3.10 3.30 Q 5 Q1 3.80 18/23 DocID024360 Rev 3

STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Package mechanical data Figure 36. TO-3P drawing 8045950_A DocID024360 Rev 3 19/23

Packing mechanical data STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF 5 Packing mechanical data Table 12. D²PAK (TO-263) tape and reel mechanical data Tape Reel Dim. mm mm Dim. Min. Max. Min. Max. A0 10.5 10.7 A 330 B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 13.2 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 26.4 F 11.4 11.6 N 100 K0 4.8 5.0 T 30.4 P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 20/23 DocID024360 Rev 3

STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Packing mechanical data Figure 37. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T Top cover tape P0 D P2 E K0 B0 F W A0 P1 D1 User direction of feed R User direction of feed Bending radius AM08852v2 REEL DIMENSIONS Figure 38. Reel 40mm min. T Access hole At sl ot location D B C A N Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 DocID024360 Rev 3 21/23

Revision history STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF 6 Revision history Table 13. Document revision history Date Revision Changes 12-Mar-2013 1 Initial release. 16-May-2013 2 04-Jun-2013 3 Document status promoted from preliminary data to production data. Added: New root part numbers STGB20V60DF and STGP20V60DF Table 1 on page 1. Package mechanical data Table 8 on page 12, Table 9 on page 14, Figure 32 on page 13 and Figure 33 on page 15. Section 2.1: Electrical characteristics (curves) on page 6. Added maximum value for V GE(th) and V F in Table 4: Static characteristics. 22/23 DocID024360 Rev 3

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