Qualcomm WCD9335 Basic Functional Analysis 1891 Robertson Road, Suite 500, Ottawa, ON K2H 5B7 Canada Tel: 613-829-0414 chipworks.com
Basic Functional Analysis 2 Some of the information in this report may be covered by patents, mask and/or copyright protection. This report should not be taken as an inducement to infringe on these rights. Chipworks Inc. 2016 all rights reserved. Chipworks and the Chipworks logo are registered trademarks of Chipworks Inc. This report is provided exclusively for the use of the purchasing organization. It can be freely copied and distributed within the purchasing organization, conditional upon the accompanying Chipworks accreditation remaining attached. Distribution of the entire report outside of the purchasing organization is strictly forbidden. The use of portions of the document for the support of the purchasing organization's corporate interest (e.g., licensing or marketing activities) is permitted, as defined by the fair use provisions of the copyright act. Accreditation to Chipworks must be attached to any portion of the reproduced information. FAR-1604-902 30712DYPJKL Revision 1.0 Published: April 22, 2016 Revision 2.0 Published: May 10, 2016
Basic Functional Analysis 3 Table of Contents 1 Introduction 1.1 Device Naming Conventions Used in this Report 1.2 Device Samples Used for Analysis 1.3 Company Profile 1.4 Executive Summary 1.5 HG11-NN875-200 Die Summary 2 Device Identification 2.1 G935T Downstream Product 2.2 WCD9335 Package 2.3 HG11-NN875-200 Die 2.4 HG11-NN875-200 Die Features 3 Process Analysis 3.1 HG11-NN875-200 Die Cross-Sectional Analysis 4 Functional Layout Analysis 4.1 HG11-NN875-200 Die Functional Layout Analysis 4.2 4.1 HG11-NN875-200 Die Functional Block Summary 5 Cost Analysis 5.1 WCD9335 Manufacturing Cost Analysis 6 References 7 Statement of Measurement Uncertainty and Scope Variation About Chipworks
Basic Functional Analysis 4 List of Figures Figure 2.1.1 G935T Smartphone Front Figure 2.1.2 G935T Smartphone Back Figure 2.1.3 G935T Smartphone PCB WCD9335 Location Figure 2.2.1 WCD9335 Package Photograph Top Figure 2.2.2 WCD9335 Package Photograph Bottom Figure 2.2.3 WCD9335 Package X-Ray Top View Figure 2.2.4 WCD9335 Package X-Ray Side View Figure 2.3.1 HG11-NN875-200 Die Photograph With RDL Figure 2.3.2 HG11-NN875-200 Die Photograph Without RDL Figure 2.3.3 HG11-NN875-200 Die Markings 1 Figure 2.3.4 HG11-NN875-200 Die Markings 2 Figure 2.3.5 HG11-NN875-200 Die Photograph Delayered to the Polysilicon Layer Figure 2.4.1 HG11-NN875-200 Die Corner and RDL Vias Without RDL Figure 3.1.1 HG11-NN875-200 General Structure Logic Figure 3.1.2 HG11-NN875-200 Minimum Metal 1 Pitch Figure 3.1.3 HG11-NN875-200 Minimum Contacted Gate Pitch Figure 4.1.1 HG11-NN875-200 Functional Blocks at the Polysilicon Layer List of Tables Table 1.2.1 WCD9335 Component Summary Table 1.5.1 HG11-NN875-200 Die Summary Table 1.5.2 HG11-NN875-200 Observed Critical Dimensions Table 4.2.1 HG11-NN875-200 Functional Block Summary Table 5.1.1 HG11-NN875-200 Manufacturing Cost Characteristics Table 5.1.2 WCD9335 Manufacturing Costs
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