Ultrafast Avalanche SMD Rectifier

Similar documents
Dual Common-Cathode Ultrafast Plastic Rectifier

P6KE6.8A thru P6KE540A. TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor. FEATURES PRIMARY CHARACTERISTICS

High Performance Schottky Rectifier, 1 A

High Performance Schottky Rectifier, 3.0 A

High Performance Schottky Rectifier, 1.0 A

Small Signal Fast Switching Diode

Schottky Rectifier, 1.0 A

1.5KE6.8A thru 1.5KE540A, 1N6267A thru 1N6303A. TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor.

Small Signal Fast Switching Diode FEATURES PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS

Schottky Rectifier, 1.0 A

Surface Mount Schottky Barrier

Schottky Rectifier, 100 A

Schottky Rectifier, 1 A

Surface Mount TRANSZORB Transient Voltage Suppressors

High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW

Surface Mount Multilayer Ceramic Chip Capacitor Solutions for High Voltage Applications

Standard Recovery Diodes, Generation 2 DO-5 (Stud Version), 95 A

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

Silicon PIN Photodiode

1 Form A Solid State Relay

Silicon PIN Photodiode

Optocoupler, Phototransistor Output, with Base Connection, 300 V BV CEO

High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs

Silicon PIN Photodiode

High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

PDS5100H. Product Summary. Features and Benefits. Mechanical Data. Description and Applications. Ordering Information (Note 5) Marking Information

High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs

Silicon NPN Phototransistor

Optocoupler, Phototransistor Output, with Base Connection

Standard Recovery Diodes, (Stud Version), 40 A

1 Form A Solid State Relay

Power MOSFET FEATURES. IRFZ44PbF SiHFZ44-E3 IRFZ44 SiHFZ44 T C = 25 C

Reflective Optical Sensor with Transistor Output

Optocoupler, Phototransistor Output, AC Input

Metal Film Resistors, Pulse Withstanding Protective

Power MOSFET FEATURES. IRL540PbF SiHL540-E3 IRL540 SiHL540

Power MOSFET FEATURES. IRF610PbF SiHF610-E3 IRF610 SiHF610. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 V Gate-Source Voltage V GS ± 20

Optocoupler, Phototransistor Output, 4 Pin LSOP, Long Creepage Mini-Flat Package

Aluminum Electrolytic Capacitors Power Economic Printed Wiring

Standard Recovery Diodes (Hockey PUK), 2100 A

SuperTan Extended (STE) Capacitors, Wet Tantalum Capacitors with Hermetic Seal

Aluminum Electrolytic Capacitors Power Eurodin Printed Wiring

Power Resistor Thick Film Technology

Reflective Optical Sensor with Transistor Output

AC Line Rated Ceramic Disc Capacitors Class X1, 760 V AC / Class Y1, 500 V AC

Ultrabright White LED, Ø 3 mm

Ambient Light Sensor

Optocoupler, Phototransistor Output, with Base Connection

Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20

Aluminum Electrolytic Capacitors Axial Miniature, Long-Life

Solid Tantalum Surface Mount Capacitors TANTAMOUNT, Molded Case, Low ESR

50 W Power Resistor, Thick Film Technology, TO-220

STTH2R06. High efficiency ultrafast diode. Features. Description

P-Channel 20 V (D-S) MOSFET

STTH1R04-Y. Automotive ultrafast recovery diode. Features. Description

Power MOSFET. IRF510PbF SiHF510-E3 IRF510 SiHF510. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

Aluminum Capacitors Solid Axial

Pulse Proof Thick Film Chip Resistors

STPS5L60. Power Schottky rectifier. Description. Features

10MQ100N SCHOTTKY RECTIFIER. I F(AV) = 2.1Amp V R = 100V. Bulletin PD rev. M 07/04. Major Ratings and Characteristics. Description/ Features

Silicon NPN Phototransistor

Power MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

P-Channel 20-V (D-S) MOSFET

Low Current SMD LED PLCC-2

High-speed switching diodes. Type number Package Configuration Package NXP JEITA JEDEC

Surface Mount Multilayer Ceramic Chip Capacitors for Automotive Applications

Optocoupler, Phototransistor Output, Dual Channel, SOIC-8 Package

Power MOSFET. IRF9520PbF SiHF9520-E3 IRF9520 SiHF9520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS V Gate-Source Voltage V GS ± 20

SMD Aluminum Solid Capacitors with Conductive Polymer

HEXFRED Ultrafast Soft Recovery Diode, 25 A

PMEG2020EH; PMEG2020EJ

PMEG3015EH; PMEG3015EJ

Power MOSFET FEATURES. IRF540PbF SiHF540-E3 IRF540 SiHF540. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

Diode, Schottky SMB/DO-214AA. Page <1> 24/04/08 V1.1. Dimensions Inches (Millimeters)

BZW50. Transil, transient voltage surge suppressor (TVS) Features. Description

NTMS4920NR2G. Power MOSFET 30 V, 17 A, N Channel, SO 8 Features

SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS

Photovoltaic MOSFET Driver with Integrated Fast Turn-Off, Solid-State Relay

2.5 A Output Current IGBT and MOSFET Driver

Optocoupler, Phototransistor Output, High Reliability, 5300 V RMS, Low Input Current

UV SMD LED PLCC-2 FEATURES APPLICATIONS. at I F (ma) (ma) MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX.

Features. Case: TO (2), TO-220F-3 (Option 1), TO (1) and TO Power Management Instrumentation

Metal Film Resistors, Industrial, Flameproof

N-Channel 100 V (D-S) MOSFET

Aluminum Electrolytic Capacitors Radial Miniature, Low Impedance, High Vibration Capability

Preamplifier Circuit for IR Remote Control

P-Channel 1.25-W, 1.8-V (G-S) MOSFET

BAT54 series SOT23 Schottky barrier diodes Rev. 5 5 October 2012 Product data sheet 1. Product profile 1.1 General description

SMD PTC - Nickel Thin Film Linear Thermistors

Green. Part Number Qualification Case Packaging B1X0Q-13-F Automotive SMA 5,000/Tape & Reel B1X0BQ-13-F Automotive SMB 3,000/Tape & Reel

Schottky barrier quadruple diode

PMEG1020EA. 1. Product profile. 2 A ultra low V F MEGA Schottky barrier rectifier. 1.1 General description. 1.2 Features. 1.

AC Line Rated Ceramic Disc Capacitors Class X1, 760 V AC, Class Y1, 500 V AC

PMEG3005EB; PMEG3005EL

IR Receiver Module for Light Barrier Systems

VJ 6040 UHF Chip Antenna for Mobile Devices

Electrical Double Layer Energy Storage Capacitors Power and Energy Versions

Power MOSFET FEATURES. IRF9640PbF SiHF9640-E3 IRF9640 SiHF9640

Insulated Precision Wirewound Resistors Axial Leads

Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20

Transcription:

BYG2D, BYG2G, BYG2J Ultrafast Avalanche SMD Rectifier DO-24AC (SMA) FEATURES Low profile package Ideal for automated placement Glass passivated pellet chip junction Low reverse current Soft recovery characteristics Ultrafast reverse recovery time Meets MSL level, per J-STD-2, LF maximum peak of 26 C AEC-Q qualified Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS I F(AV).5 A V RRM 2 V, 4 V, 6 V I FSM 3 A I R. μa V F at I F.4 V t rr 75 ns E R 2 mj T J max. 5 C Package DO-24AC (SMA) Diode variations Single die For use in high frequency rectification of power supply, inverters, converters, and freewheeling diodes for consumer, automotive and telecommunication. MECHANICAL DATA Case: DO-24AC (SMA) Molding compound meets UL 94 V- flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3 - RoHS-compliant, AEC-Q qualified Terminals: Matte tin plated leads, solderable per J-STD-2 and JESD 22-B2 E3 suffix meets JESD 2 class 2 whisker test, HE3 suffix meets JESD 2 class 2 whisker test Polarity: Color band denotes the cathode end MAXIMUM RATINGS (T A = 25 C unless otherwise noted) PARAMETER SYMBOL BYG2D BYG2G BYG2J UNIT Device marking code BYG2D BYG2G BYG2J Maximum repetitive peak reverse voltage V RRM 2 4 6 V Average forward current I F(AV).5 A Peak forward surge current ms single half sine-wave superimposed on rated load Pulse energy in avalanche mode, non repetitive (inductive load switch off) I (BR)R = A, T J = 25 C I FSM 3 A E R 2 mj Operating junction and storage temperature range T J, T STG -55 to +5 C Revision: 9-Feb-5 Document Number: 88958 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

BYG2D, BYG2G, BYG2J ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL BYG2D BYG2G BYG2J UNIT Maximum instantaneous I F = A.3 T forward voltage J = 25 C V () F I F =.5 A.4 V T J = 25 C Maximum DC reverse current I R T J = C µa Maximum reverse recovery time I F =.5 A, I R =. A, I rr =.25 A t rr 75 ns Note () Pulse test: 3 μs pulse width, % duty cycle THERMAL CHARACTERISTICS (T A = 25 C unless otherwise noted) PARAMETER SYMBOL BYG2D BYG2G BYG2J UNIT Typical thermal resistance, junction to lead, T L = const. R JL 25 C/W Typical thermal resistance, junction to ambient Notes () Mounted on epoxy-glass hard tissue (2) Mounted on epoxy-glass hard tissue, 5 mm 2 35 μm Cu (3) Mounted on Al-oxide-ceramic (Al 2 O 3 ), 5 mm 2 35 μm Cu R JA () 5 R (2) JA 25 R (3) JA C/W ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE BYG2D-E3/TR.64 TR 8 7" diameter plastic tape and reel BYG2D-E3/TR3.64 TR3 75 3" diameter plastic tape and reel BYG2DHE3/TR ().64 TR 8 7" diameter plastic tape and reel BYG2DHE3/TR3 ().64 TR3 75 3" diameter plastic tape and reel Note () AEC-Q qualified Revision: 9-Feb-5 2 Document Number: 88958 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

Average Diode Capacitance (pf) www.vishay.com BYG2D, BYG2G, BYG2J RATINGS AND CHARACTERISTICS CURVES (T A = 25 C unless otherwise noted) 7.. T J = 5 C T J = 25 C Reverse Power Dissipation (mw) 6 5 4 3 2 P R - Limit at 8 % V R P R - Limit at % V R...5..5 2. 2.5 3. Forward Voltage (V) Fig. - Forward Current vs. Forward Voltage 25 5 75 25 5 Junction Temperature ( C) Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature.6.4 R θja 25 K/W Half Sine-Wave 3 25 f = MHz.2. 2.8.6 R θja 25 K/W 5.4 R θja 5 K/W.2 5 2 4 6 8 2 4 6 Ambient Temperature ( C) Fig. 2 - Max. Average Forward Current vs. Ambient Temperature. Reverse Voltage (V) Fig. 5 - Diode Capacitance vs. Reverse Voltage 6 I R =.5 A, i R =.25 A Reverse Current (µa) Reverse Recovery Time (ns) 5 4 3 2 T A = 25 C T A = C T A = 75 C T A = 5 C T A = 25 C 25 5 75 25 5 Junction Temperature ( C).2.4.6.8. Fig. 3 - Reverse Current vs. Junction Temperature Fig. 6 - Reverse Recovery Time vs. Forward Current Revision: 9-Feb-5 3 Document Number: 88958 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

BYG2D, BYG2G, BYG2J Reverse Recovery Charge (nc) 2 I R =.5 A, i R =.25 A 5 T A = 25 C T A = C T A = 75 C 5 T A = 5 C T A = 25 C.2.4.6.8. Thermal Resistance for Pulse Cond. (K/W) 25 K/W DC t p /T =.5 t p /T =.2 t p /T =. t p /T =.5 t p /T =.2 Single Pulse t p /T =. -5-4 -3-2 - 2 Pulse Length (s) Fig. 7 - Reverse Recovery Charge vs. Forward Current Fig. 8 - Thermal Response PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-24AC (SMA) Cathode Band Mounting Pad Layout.65 (.65).49 (.25). (2.79). (2.54).66 (.68) MIN..74 (.88) MAX..77 (4.5).57 (3.99).2 (.35).6 (.52).6 (.52) MIN..9 (2.29).78 (.98).28 (5.28) REF..6 (.52).3 (.76).8 (.23) ().28 (5.28).94 (4.93) Revision: 9-Feb-5 4 Document Number: 88958 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Revision: 3-Jun-6 Document Number: 9