Schottky Rectifier, 1.0 A

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Schottky Rectifier, 1.0 A VS-BQ040-M3 Cathode Anode PRODUCT SUMMARY Package SMB I F(AV) 1.0 A V R 40 V V F at I F 0.38 V I RM 9 ma at 125 C T J max. 150 C Diode variation Single die E AS 3.0 mj FEATURES Low forward voltage drop Guard ring for enhanced ruggedness and long term reliability Small foot print, surface mountable High frequency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The VS-BQ040-M3 surface mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I F(AV) Rectangular waveform 1.0 A V RRM 40 V I FSM t p = 5 μs sine 430 A V F 1.0 Apk, T J = 125 C 0.38 V T J Range - 55 to 150 C VOLTAGE RATINGS PARAMETER SYMBOL VS-BQ040-M3 UNITS Maximum DC reverse voltage V R Maximum working peak reverse voltage V RWM 40 V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I F(AV) 50 % duty cycle at T L = 122 C, rectangular waveform 1.0 A Maximum peak one cycle 5 μs sine or 3 μs rect. pulse Following any rated 430 I FSM load condition and with A non-repetitive surge current ms sine or 6 ms rect. pulse rated V RRM applied 40 Non-repetitive avalanche energy E AS T J = 25 C, I AS = 1 A, L = 6 mh 3.0 mj Current decaying linearly to zero in 1 μs Repetitive avalanche current I AR 1.0 A Frequency limited by T J maximum V A = 1.5 x V R typical Revision: 29-May-12 1 Document Number: 93335 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?900

VS-BQ040-M3 ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum forward voltage drop See fig. 1 Note (1) Pulse width = 300 μs, duty cycle = 2 % V FM (1) 1 A 0.45 T J = 25 C 2 A 0.52 1 A 0.38 T J = 125 C 2 A 0.50 Maximum reverse leakage current T J = 25 C 0.1 I RM V R = Rated V R See fig. 2 T J = 125 C 9.0 ma Typical junction capacitance C T V R = 5 V DC, (test signal range 0 khz to 1 MHz), 25 C 115 pf Typical series inductance L S Measured lead to lead 5 mm from package body 2.0 nh Maximum voltage rate of charge dv/dt Rated V R 000 V/μs V THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage temperature range T (1) J, T Stg - 55 to 150 C Maximum thermal resistance, junction to lead R (2) thjl DC operation 36 Maximum thermal resistance, junction to ambient R thja 80 C/W Approximate weight 0. g 0.003 oz. Marking device Case style SMB (similar DO-214AA) 1F Notes dp (1) tot 1 ------------ < ------------- thermal runaway condition for a diode on its own heatsink dt J R thja (2) Mounted 1" square PCB Revision: 29-May-12 2 Document Number: 93335 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?900

VS-BQ040-M3 I F - Instantaneous Forward Current (A) 1 T J = 150 C T J = 25 C T J = 125 C 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 V FM - Forward Voltage Drop (V) V R - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Reverse Current vs. Reverse Voltage I R - Reverse Current (ma) 0 1.0 0. 0.0 0.00 150 C 125 C 0 C 75 C 50 C 25 C 0.000 0 5 15 20 25 30 35 40 45 00 C T - Junction Capacitance (pf) 0 0 20 30 40 V R - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Z thjc - Thermal Impedance ( C/W) 1 00 1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 Single pulse (thermal resistance) 0.1 0.00001 0.0001 0.001 0.01 0.1 1 0 t 1 t 2 t 1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics (Per Leg) P DM Notes: 1. Duty factor D = t 1 / t 2. 2. Peak T J = P dm x Z thjc + T c. Revision: 29-May-12 3 Document Number: 93335 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?900

VS-BQ040-M3 Allowable Case Temperature ( C) 160 150 140 130 120 1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 DC 0 90 Square wave (D = 0.50) 80 % rated V R applied 80 see note (1) 70 0.0 0.3 0.6 0.9 1.2 1.5 Allowable Case Temperature ( C) 0.8 0.6 0.4 0.2 0 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 DC RMS limit 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 I F(AV) - Average Forward Current (A) I F(AV) - Average Forward Current (A) Fig. 5 - Maximum Average Forward Current vs. Allowable Lead Temperature Fig. 6 - Maximum Average Forward Dissipation vs. Average Forward Current I FSM - Non-Repetitive Surge Current (A) 00 0 At any rated load condition and with rated V RRM applied following surge 0 00 000 t p - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Peak Surge Forward Current vs. Pulse Duration Note (1) Formula used: T C = T J - (Pd + Pd REV ) x R thjc ; Pd = Forward power loss = I F(AV) x V FM at (I F(AV) /D) (see fig. 6); Pd REV = Inverse power loss = V R1 x I R (1 - D); I R at V R1 = 80 % rated V R Revision: 29-May-12 4 Document Number: 93335 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?900

VS-BQ040-M3 ORDERING INFORMATION TABLE Device code VS- B Q 040 -M3 1 2 3 4 5 6 1 - product 2 - Current rating 3 - B = SMB 4 - Q = Schottky Q series 5 - Voltage rating (040 = 40 V) 6 - Environmental digit: -M3 = Halogen-free, RoHS compliant and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N PREFERRED PACKAGE CODE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-BQ040-M3/5BT 5BT 3200 13" diameter plastic tape and reel Dimensions Part marking information Packaging information LINKS TO RELATED DOCUMENTS www.vishay.com/doc?95401 www.vishay.com/doc?95403 www.vishay.com/doc?95404 Revision: 29-May-12 5 Document Number: 93335 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?900

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