INTEGRATED CIRCUITS DATA SHEET. TDA7000 FM radio circuit. Product specification File under Integrated Circuits, IC01



Similar documents
INTEGRATED CIRCUITS DATA SHEET. TDA W BTL mono audio amplifier. Product specification File under Integrated Circuits, IC01

How To Control A Power Supply On A Powerline With A.F.F Amplifier

Kit 27. 1W TDA7052 POWER AMPLIFIER

DATA SHEET. TDA1510AQ 24 W BTL or 2 x 12 W stereo car radio power amplifier INTEGRATED CIRCUITS

DATA SHEET. TDA1518BQ 24 W BTL or 2 x 12 watt stereo car radio power amplifier INTEGRATED CIRCUITS

DATA SHEET. TDA8560Q 2 40 W/2 Ω stereo BTL car radio power amplifier with diagnostic facility INTEGRATED CIRCUITS Jan 08

DATA SHEET. TDA1543 Dual 16-bit DAC (economy version) (I 2 S input format) INTEGRATED CIRCUITS

INTEGRATED CIRCUITS DATA SHEET. SAA digit LED-driver with I 2 C-Bus interface. Product specification File under Integrated Circuits, IC01

INTEGRATED CIRCUITS. For a complete data sheet, please also download:

DATA SHEET. TDA bit high-speed analog-to-digital converter INTEGRATED CIRCUITS Aug 26

INTEGRATED CIRCUITS. NE558 Quad timer. Product data Supersedes data of 2001 Aug Feb 14

FM/AM RADIO IC CD2003GP/GB. 1 Overview. 2 Block Diagram And Pin Descriptions

PIN CONFIGURATION FEATURES ORDERING INFORMATION ABSOLUTE MAXIMUM RATINGS. D, F, N Packages

SA605 High performance low power mixer FM IF system

TDA2822 DUAL POWER AMPLIFIER SUPPLY VOLTAGE DOWN TO 3 V LOW CROSSOVER DISTORSION LOW QUIESCENT CURRENT BRIDGE OR STEREO CONFIGURATION

SA General description. 2. Features. 3. Applications. 3 W BTL audio amplifier

4-bit binary full adder with fast carry CIN + (A1 + B1) + 2(A2 + B2) + 4(A3 + B3) + 8(A4 + B4) = = S1 + 2S2 + 4S3 + 8S4 + 16COUT

INTEGRATED CIRCUITS. 74LVC08A Quad 2-input AND gate. Product specification IC24 Data Handbook Jun 30

INTEGRATED CIRCUITS. For a complete data sheet, please also download:

Precision, Unity-Gain Differential Amplifier AMP03

40 V, 200 ma NPN switching transistor

High Common-Mode Rejection. Differential Line Receiver SSM2141. Fax: 781/ FUNCTIONAL BLOCK DIAGRAM FEATURES. High Common-Mode Rejection

Optocoupler, Phototransistor Output, with Base Connection

DATA SHEET. BST50; BST51; BST52 NPN Darlington transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Feb 20.

DISCRETE SEMICONDUCTORS DATA SHEET. BLF244 VHF power MOS transistor

DATA SHEET. MMBT3904 NPN switching transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct Feb 03.

LOW POWER NARROWBAND FM IF

TL084 TL084A - TL084B

N-channel enhancement mode TrenchMOS transistor

DISCRETE SEMICONDUCTORS DATA SHEET

DISCRETE SEMICONDUCTORS DATA SHEET. BFQ34 NPN 4 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14

Kit Watt Audio Amplifier

TDA CHANNEL VOLUME CONTROLLER 1 FEATURES 2 DESCRIPTION. Figure 1. Package

65 V, 100 ma PNP/PNP general-purpose transistor

unit : mm With heat sink (see Pd Ta characteristics)

DISCRETE SEMICONDUCTORS DATA SHEET BC856; BC857; BC858

FM Radio Transmitter & Receiver Modules

unit:mm 3006B-DIP

Features. Applications. Transmitter. Receiver. General Description MINIATURE MODULE. QM MODULATION OPTIMAL RANGE 1000m

FM TRANSMITTER & RECEIVER HYBRID MODULES. FM-RTFQ SERIES FM-RRFQ SERIES. Transmitter. Receiver. Applications

DATA SHEET. BC875; BC879 NPN Darlington transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 May 28.

LM386 Low Voltage Audio Power Amplifier

INTEGRATED CIRCUITS DATA SHEET. PCF bit A/D and D/A converter. Product specification Supersedes data of 2001 Dec 13.

45 V, 100 ma NPN/PNP general-purpose transistor

TS321 Low Power Single Operational Amplifier

Features. Modulation Frequency (khz) VDD. PLL Clock Synthesizer with Spread Spectrum Circuitry GND

LM1036 Dual DC Operated Tone/Volume/Balance Circuit

Medium power Schottky barrier single diode

Obsolete Product(s) - Obsolete Product(s)

HA-5104/883. Low Noise, High Performance, Quad Operational Amplifier. Features. Description. Applications. Ordering Information. Pinout.

MC Low noise quad operational amplifier. Features. Description

Optocoupler, Phototransistor Output, Dual Channel, SOIC-8 Package

IP4234CZ6. 1. Product profile. Single USB 2.0 ESD protection to IEC level General description. 1.2 Features. 1.

INTEGRATED CIRCUITS. 74F153 Dual 4-line to 1-line multiplexer. Product specification 1996 Jan 05 IC15 Data Handbook

Application Note TMA Series

handbook, 2 columns handbook, halfpage 085 CS

DATA SHEET. PBSS5540Z 40 V low V CEsat PNP transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2001 Jan Sep 21.

1 Form A Solid State Relay

Wireless Audio Link IC

LM1596 LM1496 Balanced Modulator-Demodulator

10 ma LED driver in SOT457

Optocoupler, Phototransistor Output, with Base Connection in SOIC-8 Package

4N25 Phototransistor Optocoupler General Purpose Type

MUSES8920. High Quality Audio J-FET Input Dual Operational Amplifier - 1 -

Optocoupler, Phototransistor Output, with Base Connection

Data Sheet, V1.1, May 2008 SMM310. Silicon MEMS Microphone. Small Signal Discretes

SiGe:C Low Noise High Linearity Amplifier

NTE923 & NTE923D Integrated Circuit Precision Voltage Regulator

VS-500 Voltage Controlled SAW Oscillator

Programmable Single-/Dual-/Triple- Tone Gong SAE 800

NPN wideband transistor in a SOT89 plastic package.

IR Receiver Module for Light Barrier Systems

AS A Low Dropout Voltage Regulator Adjustable & Fixed Output, Fast Response

Equivalent Circuit. Operating Characteristics at Ta = 25 C, V CC = ±34V, R L = 8Ω, VG = 40dB, Rg = 600Ω, R L : non-inductive load STK4181V

Advanced Monolithic Systems

CAN bus ESD protection diode

Baseband delay line QUICK REFERENCE DATA

The sensor can be operated at any frequency between DC and 1 MHz.

MOSFET N-channel enhancement switching transistor IMPORTANT NOTICE. use

TDA2004R W stereo amplifier for car radio. Features. Description

Preamplifier Circuit for IR Remote Control

How To Make An Electric Static Discharge (Esd) Protection Diode

Triple single-pole double-throw analog switch

LM78XX Series Voltage Regulators

D-PAK version of BUK117-50DL

High Speed, Low Power Dual Op Amp AD827

ICS SPREAD SPECTRUM CLOCK SYNTHESIZER. Description. Features. Block Diagram DATASHEET

TDA W CAR RADIO AUDIO AMPLIFIER

logic level for RCD/ GFI/ LCCB applications

Rail-to-Rail, High Output Current Amplifier AD8397

LM833 LOW NOISE DUAL OPERATIONAL AMPLIFIER

FM TRANSMITTER & RECEIVER HYBRID MODULES. FM-RRFQ SERIES. Transmitter. Receiver. Applications

2PD601ARL; 2PD601ASL

Preamplifier Circuit for IR Remote Control

HCC/HCF4032B HCC/HCF4038B

Optocoupler, Phototransistor Output, AC Input

SG2525A SG3525A REGULATING PULSE WIDTH MODULATORS

DATA SHEET. BF245A; BF245B; BF245C N-channel silicon field-effect transistors DISCRETE SEMICONDUCTORS

Optocoupler, Phototransistor Output, with Base Connection

BAT54 series SOT23 Schottky barrier diodes Rev. 5 5 October 2012 Product data sheet 1. Product profile 1.1 General description

Transcription:

INTEGRATED CIRCUITS DATA SHEET File under Integrated Circuits, IC01 May 1992

GENERAL DESCRIPTION The is a monolithic integrated circuit for mono FM portable radios, where a minimum on peripheral components is important (small dimensions and low costs). The IC has an FLL (Frequency-Locked-Loop) system with an intermediate frequency of 70 khz. The i.f. selectivity is obtained by active RC filters. The only function which needs alignment is the resonant circuit for the oscillator, thus selecting the reception frequency. Spurious reception is avoided by means of a mute circuit, which also eliminates too noisy input signals. Special precautions are taken to meet the radiation requirements. The includes the following functions: R.F. input stage Mixer Local oscillator I.F. amplifier/limiter Phase demodulator Mute detector Mute switch QUICK REFERENCE DATA Supply voltage range (pin 5) V P 2,7 to 10 V Supply current at V P = 4,5 V I P typ. 8 ma R.F. input frequency range f rf 1,5 to 110 MHz Sensitivity for -3 db limiting (e.m.f. voltage) (source impedance: 75 Ω; mute disabled) EMF typ. 1,5 µv Signal handling (e.m.f. voltage) (source impedance: 75 Ω) EMF typ. 200 mv A.F. output voltage at R L = 22 kω V o typ. 75 mv PACKAGE OUTLINE 18-lead DIL; plastic (SOT102HE); SOT102-1; 1996 July 24. May 1992 2

Fig.1 Block diagram. May 1992 3

RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Supply voltage (pin 5) V P max. 12 V Oscillator voltage (pin 6) V 6-5 V P 0,5 to V P + 0,5 V Total power dissipation see derating curve Fig.2 Storage temperature range T stg 55 to +150 C Operating ambient temperature range T amb 0 to + 60 C Fig.2 Power derating curve. D.C. CHARACTERISTICS V P = 4,5 V; T amb = 25 C; measured in Fig.4; unless otherwise specified PARAMETER SYMBOL MIN. TYP. MAX. UNIT Supply voltage (pin 5) V P 2,7 4,5 10 V Supply current at V P = 4,5 V I P 8 ma Oscillator current (pin 6) I 6 280 µa Voltage at pin 14 V 14-16 1,35 V Output current at pin 2 I 2 60 µa Voltage at pin 2; R L = 22 kω V 2-16 1,3 V May 1992 4

A.C. CHARACTERISTICS V P = 4,5 V; T amb = 25 C; measured in Fig.4 (mute switch open, enabled); f rf = 96 MHz (tuned to max. signal at 5 µv e.m.f.) modulated with f = ± 22,5 khz; f m = 1 khz; EMF = 0,2 mv (e.m.f. voltage at a source impedance of 75 Ω); r.m.s. noise voltage measured unweighted (f = 300 Hz to 20 khz); unless otherwise specified. PARAMETER SYMBOL MIN. TYP. MAX. UNIT Sensitivity (see Fig.3) (e.m.f. voltage) for 3 db limiting; muting disabled EMF 1,5 µv for 3 db muting EMF 6 µv for S/N = 26 db EMF 5,5 µv Signal handling (e.m.f. voltage) for THD < 10%; f = ± 75 khz EMF 200 mv Signal-to-noise ratio S/N 60 db Total harmonic distortion at f = ± 22,5 khz THD 0,7 % at f = ± 75 khz THD 2,3 % AM suppression of output voltage (ratio of the AM output signal referred to the FM output signal) FM signal: f m = 1 khz; f = ± 75 khz AM signal: f m = 1 khz; m = 80% AMS 50 db Ripple rejection ( V P = 100 mv; f = 1 khz) RR 10 db Oscillator voltage (r.m.s. value) at pin 6 V 6-5(rms) 250 mv Variation of oscillator frequency with supply voltage ( V P = 1 V) f osc 60 khz/v Selectivity S +300 45 db S 300 35 db A.F.C. range f rf ±300 khz Audio bandwidth at V o = 3 db measured with pre-emphasis (t = 50 µs) B 10 khz A.F. output voltage (r.m.s. value) at R L = 22 kω V o(rms) 75 mv Load resistance at V P = 4,5 V R L 22 kω at V P = 9,0 V R L 47 kω May 1992 5

Fig.3 A.F output voltage (V o ) and total harmonic distortion (THD) as a function of the e.m.f. input voltage (EMF) with a source impedance (R S ) of 75 Ω: (1) muting system enabled; (2) muting system disabled. Conditions: 0 db = 75 mv; f rf = 96 MHz. for S + N curve: f = ± 22,5 khz; f m = 1 khz. for THD curve; f = ± 75 khz; f m = 1 khz. Notes 1. The muting system can be disabled by feeding a current of about 20 µa into pin 1. 2. The interstation noise level can be decreased by choosing a low-value capacitor at pin 3. Silent tuning can be achieved by omitting this capacitor. May 1992 6

Fig.4 Test circuit; for printed-circuit boards see Figs 5 and 6. May 1992 7

Fig.5 Track side of printed-circuit board used for the circuit of Fig.4. Fig.6 Component side of printed-circuit board showing component layout used for the circuit of Fig.4. May 1992 8

PACKAGE OUTLINE DIP18: plastic dual in-line package; 18 leads (300 mil) SOT102-1 D M E seating plane A 2 A L A 1 Z 18 e b 10 b 1 b 2 w M c (e ) 1 M H pin 1 index E 1 9 0 5 10 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) A A UNIT 1 A 2 (1) (1) (1) max. b 1 b 2 c D E e L M Z min. max. b e 1 M E H w max. 1.40 0.53 1.40 0.32 21.8 6.48 3.9 8.25 9.5 mm 4.7 0.51 3.7 2.54 7.62 0.254 0.85 1.14 0.38 1.14 0.23 21.4 6.20 3.4 7.80 8.3 inches 0.19 0.020 0.15 0.055 0.044 0.021 0.015 0.055 0.044 0.013 0.009 0.86 0.84 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. 0.26 0.24 0.10 0.30 0.15 0.13 0.32 0.31 0.37 0.33 0.01 0.033 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT102-1 93-10-14 95-01-23 May 1992 9

SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our IC Package Databook (order code 9398 652 90011). Soldering by dipping or by wave The maximum permissible temperature of the solder is 260 C; solder at this temperature must not be in contact with the joint for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds. The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (T stg max ). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. Repairing soldered joints Apply a low voltage soldering iron (less than 24 V) to the lead(s) of the package, below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 C, contact may be up to 5 seconds. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. May 1992 10