TSOP7000. IR Receiver for High Data Rate PCM at 455 khz. Vishay Semiconductors



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TSOP7000 IR Receiver for High Daa Rae PCM a 455 khz Descripion The TSOP7000 is a miniaurized receiver for infrared remoe conrol and IR daa ransmission. PIN diode and preamplifier are assembled on lead frame, he epoxy package is designed as IR filer. The demodulaed oupu signal can direcly be decoded by a microprocessor. The main benefi is he operaion wih high daa raes and long disances. This componen has no been qualified according o auomoive specificaions. 1 2 3 16672 Feaures Phoo deecor and preamplifier in one package Inernal Bandfiler for PCM frequency Inernal shielding agains elecrical field disurbance TTL and CMOS compaibiliy Oupu acive low Small size package Lead (Pb)-free componen Componen in accordance o RoHS 2002/95/EC and WEEE 2002/96/EC e3 Special Feaures Daa rae 20 kbi/s Supply volage 2.7-5.5 V Shor seling ime afer power on High envelope duy cycle can be received Enhanced immuniy agains disurbance from energy saving lamps Mechanical Daa Pinning: 1 = OUT, 2 = GND, 3 = V S Block Diagram Applicaion Circui 16841 Inpu AGC Band Pass 10 kω Demodulaor 3 V S 1 OUT 16843 Transmie r wih TSHFxxxx TSOPxxxx Circui V S OUT GND R 1 = 47 Ω C 1 = 4.7 µf R 2 >= 1 kω V O µc + V S GN D PIN Conrol Circui 2 GND R 1 +C 1 recommended o suppress power supply disurbances. R 2 opional for improved pulse forming. 294

Absolue Maximum Raings T amb = 25 C, unless oherwise specified TSOP7000 Parameer Tes condiion Symbol Value Uni Supply Volage Pin 3 V S -0.3 o + 6.0 V Volage a oupu o supply Pin 1 V S - V O -0.3 o (V S + 0.3) V Supply Curren Pin 3 I S 5 ma Oupu Volage Pin 1 V O -0.3 o + 6.0 V Oupu Curren Pin 1 I O 15 ma Juncion Temperaure T j 100 C Sorage Temperaure Range T sg - 25 o + 85 C Operaing Temperaure Range T amb - 25 o + 85 C Soldering Temperaure 10 s, 1 mm from case T sd 260 C Power Consumpion P o 30 mw Elecrical and Opical Characerisics T amb = 25 C, unless oherwise specified Parameer Tes condiion Symbol Min Typ. Max Uni Supply Curren (Pin 3) Dark ambien I SD 2.0 2.7 ma E v = 40 klx, sunligh I SH 2.3 ma Supply Volage (Pin 3) V S 2.7 5 5.5 V Transmission Disance λ p = 870 nm, IR Diode TSHF5400, I F = 300 ma d max 20 m Threshold Irradiance λ p = 950 nm, IR Diode TSAL6400, I F = 300 ma λ p = 870 nm, opical es signal of fig. 1 d max 12 m E e min 1.5 mw/m 2 Maximum Irradiance Opical es signal of fig. 1 E e max 30 W/m 2 Oupu Volage Low (Pin 1) 1 kω exernal pull up resisor V QL 100 mv Oupu Volage High (Pin 1) No exernal pull-up resisor V QH V S - 0.25 V Bandpass filer qualiy Q 10 Ou-Pulse widh olerance Opical es signal of fig.1, Δ po - 15 + 5 + 15 µs 1.5 mw/m 2 E e 30 W/m 2 Delay ime of oupu pulse Opical es signal of fig. 1, E e > 1.5 mw/m 2 don 15 36 µs Receiver sar up ime Valid daa afer power on V 50 µs Falling ime Leading edge of oupu pulse f 0.4 µs Rise ime No exernal pull up resisor r 12 µs 1 kω exernal pull up resisor r 1.2 µs Direciviy Angle of half ransmission disance ϕ 1/2 ± 45 deg 295

j TSOP7000 Typical Characerisics T amb = 25 C, unless oherwise specified E e V Q V QH 50 % V QL Opical Tes Signal (f = 455 khz, 10 cycles/burs) pi =22µs don po = pi ı 15 µs po 2.2 µs Oupu Signal of TSOP7000 f >48.6 µs (min. duy cycle) 90 % 10 % r 16792 don, j po - Jier of Oupu Pulse (µs) 30 N = 10 cycles/burs 25 20 Jier - po 15 10 5 Jier - don 0 0.1 1 10 100 1000 10000 100000 16791 E e - Irradiance (mw/m²) Figure 1. Oupu Funcion Figure 4. Jier of Oupu Pulse Opical Tes Signal (IR diode TSHF5400, V O E e Oupu Signal of TSOP7000 V OH V OL pi =22 µs j don jier of leading edge p 870 nm, IF = 300 ma, f = 455 khz, 10 cycles/burs) don Figure 2. Oupu Fucnion (mi Jier) po j po jier of oupu pulse widh 16755 E e min / E e rel - Responsiiviy 0.9 0.7 0.5 0.4 0.3 0.2 0.1 0.0 300 350 400 450 500 550 600 16751 f - Frequency (khz) Figure 5. Frequency Dependence of Responsiviy don, po - Oupu Pulse Lengh (µs) 16790 35 30 25 20 15 10 5 0 0.1 Oupu pulse widh - po Delay ime - don N = 10 cycles/burs 1 10 100 1000 10000 100000 E e - Irradiance (mw/m²) E e min - Threshold Irradiance (mw/m 2 ) 16786 14 12 10 8 6 4 2 Correlaion wih ambien ligh sources (Disurbanceeffec): 10 W/m 2 = 1.4 klx (Sand.illum.A,T = 2855 K) 10 W/m 2 = 10 klx (Dayligh,T = 5900 K) 0 0.01 0.10 0 10.00 100.00 E - DC Irradiance (W/m 2 ) Figure 3. Oupu Pulse Diagram ( don, po ) Figure 6. Sensiiviy in Brigh Ambien 296

TSOP7000 E e min - Threshold Irradiance (mw/m 2 ) 2.0 1.8 1.6 1.4 1.2 0.4 0.2 Sensiiviy in dark ambien 0.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 16787 V S - Supply Volage (V) Figure 7. Sensiiviy vs. Supply Volage S ( λ ) rel - Relaive Specral Sensiiviy 1.2 0.4 0.2 0.0 750 800 850 900 950 1000 10501100 1150 16789 λ - Wavelengh (nm) Figure 10. Relaive Specral Sensiiviy vs. Wavelengh 1.1 0 10 20 30 E emin - Relaive Sensiiviy 16788 0.9 0.7 0.5 8 10 12 14 16 18 20 22 24 26 28 N -Burslengh (carriercycles/burs) Figure 8. Rel. Sensiiviy vs. Burslengh 40 0.9 50 60 70 0.7 80 0.4 0.2 0 0.2 0.4 96 12223p2 d rel - Relaive Transmission Disance Figure 11. Direciviy 2.3 I - Supply Curren (ma) s 2.2 2.1 2.0 1.9 1.8 1.7 1.6 V S = 5.5 V V S = 2.7 V 16754 1.5-25 5 15 25 35 45 55 65 75 85 T amb - Ambien Temperaure ( C) - 15-5 Figure 9. Supply Curren vs. Ambien Temperaure 297

TSOP7000 Recommendaion for Suiable Daa Formas The circui of he TSOP7000 is designed so ha disurbance signals are idenified and unwaed oupu pulses due o noise or disurbances are avoided. A bandpass filer, an auomaic gain conrol and an inegraor sage is used o suppress such disurbances. The disinguishing marks beween daa signal and disurbance are carrier frequency, burs lengh and he envelope duy cycle. The daa signal should fullfill he following condiions: The carrier frequency should be close o 455 khz. Package Dimensions in millimeers The burslengh should be a leas 22 µs (10 cycles of he carrier signal) and shorer han 500 µs. The separaion ime beween wo consecuive burss should be a leas 26 µs. If he daa burss are longer han 500 µs hen he envelope duy cycle is limied o 25 % The duy cycle of he carrier signal (455 khz) may be beween 50 % (1.1 µs pulses) and 10 % (0.2 µs pulses). The lower duy cycle may help o save baery power. 16003 298

Ozone Depleing Subsances Policy Saemen I is he policy of Vishay Semiconducor GmbH o TSOP7000 1. Mee all presen and fuure naional and inernaional sauory requiremens. 2. Regularly and coninuously improve he performance of our producs, processes, disribuion and operaing sysems wih respec o heir impac on he healh and safey of our employees and he public, as well as heir impac on he environmen. I is paricular concern o conrol or eliminae releases of hose subsances ino he amosphere which are known as ozone depleing subsances (ODSs). The Monreal Proocol (1987) and is London Amendmens (1990) inend o severely resric he use of ODSs and forbid heir use wihin he nex en years. Various naional and inernaional iniiaives are pressing for an earlier ban on hese subsances. Vishay Semiconducor GmbH has been able o use is policy of coninuous improvemens o eliminae he use of ODSs lised in he following documens. 1. Annex A, B and lis of ransiional subsances of he Monreal Proocol and he London Amendmens respecively 2. Class I and II ozone depleing subsances in he Clean Air Ac Amendmens of 1990 by he Environmenal Proecion Agency (EPA) in he USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (ransiional subsances) respecively. Vishay Semiconducor GmbH can cerify ha our semiconducors are no manufacured wih ozone depleing subsances and do no conain such subsances. We reserve he righ o make changes o improve echnical design and may do so wihou furher noice. Parameers can vary in differen applicaions. All operaing parameers mus be validaed for each cusomer applicaion by he cusomer. Should he buyer use producs for any uninended or unauhorized applicaion, he buyer shall indemnify agains all claims, coss, damages, and expenses, arising ou of, direcly or indirecly, any claim of personal damage, injury or deah associaed wih such uninended or unauhorized use. Vishay Semiconducor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany 299

Noice Legal Disclaimer Noice Vishay Specificaions of he producs displayed herein are subjec o change wihou noice. Vishay Inerechnology, Inc., or anyone on is behalf, assumes no responsibiliy or liabiliy for any errors or inaccuracies. Informaion conained herein is inended o provide a produc descripion only. No license, express or implied, by esoppel or oherwise, o any inellecual propery righs is graned by his documen. Excep as provided in Vishay's erms and condiions of sale for such producs, Vishay assumes no liabiliy whasoever, and disclaims any express or implied warrany, relaing o sale and/or use of Vishay producs including liabiliy or warranies relaing o finess for a paricular purpose, merchanabiliy, or infringemen of any paen, copyrigh, or oher inellecual propery righ. The producs shown herein are no designed for use in medical, life-saving, or life-susaining applicaions. Cusomers using or selling hese producs for use in such applicaions do so a heir own risk and agree o fully indemnify Vishay for any damages resuling from such improper use or sale. Documen Number: 91000 Revision: 08-Apr-05 1