Rev. 3 26 June 2 Product specification. Description in a plastic package using TrenchMOS technology. Product availability: in SOT23. 2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount package. 3. Applications c c Relay driver High speed line driver Logic level translator. 4. Pinning information Table : Pinning - SOT23, simplified outline and symbol Pin Description Simplified outline Symbol gate (g) 2 source (s) 3 drain (d) 3 d 2 SOT23 3ab44 g 3ab3 s N-channel MOSFET. TrenchMOS is a trademark of Royal Philips Electronics.
5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit V DS drain-source voltage (DC) T j =25to5 C 5 V I D drain current (DC) T sp =25 C; V GS =V 73 ma P tot total power dissipation T sp =25 C.83 W T j junction temperature 5 C R DSon drain-source on-state resistance V GS = V; I D = ma 2.8 5 Ω V GS =5V; I D = ma 3.8 2 Ω 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 634). Symbol Parameter Conditions Min Max Unit V DS drain-source voltage (DC) T j =25to5 C 5 V V DGR drain-gate voltage (DC) T j =25to5 C; R GS =2kΩ 5 V V GS gate-source voltage (DC) ±2 V I D drain current (DC) T sp =25 C; V GS =V; 73 ma Figure 2 and 3 T sp = C; V GS =V;Figure 2 ma I DM peak drain current T sp =25 C; pulsed; t p µs;.7 A Figure 3 P tot total power dissipation T sp =25 C; Figure.83 W T stg storage temperature 65 +5 C T j operating junction temperature 65 +5 C Source-drain diode I S source (diode forward) current (DC) T sp =25 C 73 ma I SM peak source (diode forward) current T sp =25 C; pulsed; t p µs.7 A Product specification Rev. 3 26 June 2 2 of 3
2 3aa7 2 3aa25 I der (%) P der (%) 8 8 6 6 4 4 2 2 25 5 75 25 5 75 T sp ( o C) 25 5 75 25 5 75 T sp ( o C) P der = P tot ---------------------- % P tot ( 25 C ) V GS 5V I D I der = ------------------ % I D25C ( ) Fig. Normalized total power dissipation as a function of solder point temperature. Fig 2. Normalized continuous drain current as a function of solder point temperature. 3aa49 I D (A) T sp = 25 o C R DSon = V DS / I D t p = µs µs - ms P t p δ = T D.C. ms ms -2 t p T t 2 V DS (V) Fig 3. T sp =25 C; I DM is single pulse. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. Product specification Rev. 3 26 June 2 3 of 3
7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions Value Unit R th(j-sp) thermal resistance from junction to solder point 7. Transient thermal impedance mounted on a metal clad substrate; Figure 4 R th(j-a) thermal resistance from junction to ambient mounted on a printed circuit board; minimum footprint 5 K/W 35 K/W 3 3aa47 Z th(j-sp) (K/W) 2 δ =.5.2..5 P t p δ = T.2 single pulse t p T t -5-4 -3-2 - t (s) p Fig 4. Mounted on a metal clad substrate. Transient thermal impedance from junction to solder point as a function of pulse duration. Product specification Rev. 3 26 June 2 4 of 3
8. Characteristics Table 5: Characteristics T j =25 C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit Static characteristics V (BR)DSS drain-source breakdown I D =µa; V GS =V voltage T j =25 C 5 75 V T j = 55 C 46 V V GS(th) gate-source threshold voltage I D = ma; V DS =V GS ; Figure 9 T j =25 C.4 V T j = 5 C.3 V T j = 55 C 3.5 V I DSS drain-source leakage current V DS = 4 V; V GS =V T j =25 C.. µa T j = 5 C µa I GSS gate-source leakage current V GS = ±2 V; V DS =V na R DSon drain-source on-state resistance V GS =V; I D = ma; Figure 7 and 8 T j =25 C 2.8 5 Ω T j = 5 C 28 Ω V GS =5V; I D = ma; Figure 7 and 8 T j =25 C 3.8 2 Ω Dynamic characteristics g fs forward transconductance V DS = V; I D = ma; 4 7 ms Figure C iss input capacitance V GS =V; V DS =V; 7 25 pf C oss output capacitance f = MHz; Figure 2 7 5 pf C rss reverse transfer capacitance 4 8 pf t on turn-on time V DD = 2 V; R D = 8 Ω;.7 8 ns t off turn-off time V GS =V; R G =5Ω; R GS =5Ω 8 5 ns Source-drain diode V SD source-drain (diode forward) voltage I S = 8 ma; V GS =V; Figure 3.9.5 V t rr reverse recovery time I S = 8 ma; 3 ns Q r recovered charge di S /dt = A/µs; V GS =V; V DS =25V 3 nc Product specification Rev. 3 26 June 2 5 of 3
I D (A).7.6 T j =25 o C V GS = V 3aa5 I D (A).8.7 V DS > I D X R DSon 3aa53.5.4.3 4.5 V.2 4V 3.5 V. 3V.2.4.6.8.2.4.6.8 2 V DS (V).6.5.4.3.2. T j = 25 o C 5 o C 2 3 4 5 6 7 8 9 V GS (V) Fig 5. T j =25 C Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. T j =25 C and 5 C; V DS I D R DSon Transfer characteristics: drain current as a function of gate-source voltage; typical values. R DSon (Ω) 9 8 7 6 5 4 3 2 3.5V 4 V 4.5 V 3aa52 T j = 25 o C V GS = V..2.3.4.5.6.7 I D (A) 2.2 a 2.8.6.4.2.8.6.4.2 3aa28-6 -2 2 6 4 8 T j ( o C) T j =25 C R a = DSon --------------------------- R DSon ( 25 C ) Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. Product specification Rev. 3 26 June 2 6 of 3
2 V GS(th) (V).8.6 3aa38 - I D (A) -2 3aa89.4.2-3 min typ.8.6.4 typ min -4-5.2-6 -2 2 6 4 8 T j ( o C) -6.2.4.6.8.2.4.6.8 2 V GS (V) Fig 9. I D = ma; V DS =V GS T j =25 C; V DS =5V Gate-source threshold voltage as a function of junction temperature. Fig. Sub-threshold drain current as a function of gate-source voltage..3 g fs (S).25 V DS >I D XR DSon 3aa54 T j =25 o C 2 C iss, C oss, C rss (pf) 3aa56.2.5. 5 o C C iss C oss.5..2.3.4.5.6.7.8 I D (A) C rss - 2 V DS (V) T j =25 C and 5 C; V DS I D R DSon Fig. Forward transconductance as a function of drain current; typical values. V GS = V; f = MHz Fig 2. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. Product specification Rev. 3 26 June 2 7 of 3
I S (A).9.8 V GS =V 3aa55.7.6 5 o C.5.4.3 T j =25 o C.2..2.4.6.8.2.4 V SD (V) T j =25 C and 5 C; V GS =V Fig 3. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Product specification Rev. 3 26 June 2 8 of 3
9. Package outline Plastic surface mounted package; 3 leads SOT23 D B E A X H E v M A 3 Q A A 2 c e b p w M B L p e detail X 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A max.. mm..9 b p c D E e e H E L p Q v w.48.38.5.9 3. 2.8.4.2.9.95 2.5 2..45.5.55.45.2. OUTLINE VERSION SOT23 REFERENCES IEC JEDEC EIAJ TO-236AB EUROPEAN PROJECTION ISSUE DATE 97-2-28 99-9-3 Fig 4. SOT23. Product specification Rev. 3 26 June 2 9 of 3
. Revision history Table 6: Revision history Rev Date CPCN Description 3 2626 HZG33 Product specification; third version; supersedes _2 of 9768. Converted from VDMOS (Nijmegen) to TrenchMOS technology (Hazel Grove). 2 99768 - Product specification; second version. 993 - Product specification; initial version. Product specification Rev. 3 26 June 2 of 3
. Data sheet status Datasheet status Product status Definition [] Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. [] Please consult the most recently issued data sheet before initiating or completing a design. 2. Definitions 3. Disclaimers Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 634). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Life support These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 9397 75 723 Philips Electronics N.V. 2 All rights reserved. Product specification Rev. 3 26 June 2 of 3
Philips Semiconductors - a worldwide company Argentina: see South America Australia: Tel. +6 2 974 84, Fax. +6 2 974 839 Austria: Tel. +43 6, Fax. +43 6 2 Belarus: Tel. +375 7 22 733, Fax. +375 7 22 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Tel. +359 268 92, Fax. +359 268 92 Canada: Tel. + 8 234 738 China/Hong Kong: Tel. +852 2 39 7888, Fax. +852 2 39 77 Colombia: see South America Czech Republic: see Austria Denmark: Tel. +45 3 288 2636, Fax. +45 3 57 44 Finland: Tel. +358 96 58, Fax. +358 96 58 92 France: Tel. +33 4 99 66, Fax. +33 4 99 6427 Germany: Tel. +49 4 23 536, Fax. +49 42 353 63 Hungary: see Austria India: Tel. +9 22 493 854, Fax. +9 22 493 8722 Indonesia: see Singapore Ireland: Tel. +353 7 64, Fax. +353 7 64 2 Israel: Tel. +972 36 45 444, Fax. +972 36 49 7 Italy: Tel. +39 39 23 6838, Fax +39 39 23 68 Japan: Tel. +8 33 74 53, Fax. +8 3 374 557 Korea: Tel. +82 27 9 42, Fax. +82 27 9 45 Malaysia: Tel. +6 37 5 524, Fax. +6 37 57 488 Mexico: Tel. +9-5 8 234 738 Middle East: see Italy For all other countries apply to: Philips Semiconductors, Marketing Communications, Building BE, P.O. Box 28, 56 MD EINDHOVEN, The Netherlands, Fax. +3 4 272 4825 Netherlands: Tel. +3 4 278 2785, Fax. +3 4 278 8399 New Zealand: Tel. +64 98 49 46, Fax. +64 98 49 78 Norway: Tel. +47 22 74 8, Fax. +47 22 74 834 Philippines: Tel. +63 28 6 638, Fax. +63 28 7 3474 Poland: Tel. +48 22 57, Fax. +48 22 57 Portugal: see Spain Romania: see Italy Russia: Tel. +7 95 755 698, Fax. +7 95 755 699 Singapore: Tel. +65 35 2538, Fax. +65 25 65 Slovakia: see Austria Slovenia: see Italy South Africa: Tel. +27 47 54, Fax. +27 47 5398 South America: Tel. +55 82 2333, Fax. +55 829 849 Spain: Tel. +34 33 632, Fax. +34 33 47 Sweden: Tel. +46 86 32 2, Fax. +46 86 32 2745 Switzerland: Tel. +4 4 88 2686, Fax. +4 4 8 773 Taiwan: Tel. +886 22 34 245, Fax. +886 22 34 2874 Thailand: Tel. +66 23 6 79, Fax. +66 23 98 3447 Turkey: Tel. +9 26 522 5, Fax. +9 26 522 83 Ukraine: Tel. +38 44 264 2776, Fax. +38 44 268 46 United Kingdom: Tel. +44 28 73 5, Fax. +44 28 754 842 United States: Tel. + 8 234 738 Uruguay: see South America Vietnam: see Singapore Yugoslavia: Tel. +38 334 299, Fax. +38 3342 553 Internet: http://www.semiconductors.philips.com (SCA7) Product specification Rev. 3 26 June 2 2 of 3
Contents Description............................. 2 Features............................... 3 Applications............................ 4 Pinning information...................... 5 Quick reference data..................... 2 6 Limiting values.......................... 2 7 Thermal characteristics................... 4 7. Transient thermal impedance.............. 4 8 Characteristics.......................... 5 9 Package outline......................... 9 Revision history........................ Data sheet status....................... 2 Definitions............................ 3 Disclaimers............................ Philips Electronics N.V. 2. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 26 June 2 Document order number: 9397 75 723