Introduction to Picosun ALD Our mission is to provide our customers with user-friedly, reliable and productive ALD process tools
Picosun 1. Picosun 2. Atomic Layer Deposition 3. ALD in Finland 4. Thin film materials and applications 5. SUNALE ALD process tools 6. Co-operation partners
Picosun Main Headquarters Picosun main headquarters are located in Micronova building in Espoo, Finland Picosun Oy is part of Stephen Industries Inc Oy
Picosun Worldwide North American Headquarters Picosun USA Detroit, USA Resales France, Germany, UK, Ireland EURIS Resales Spain & Portugal IZASA S.A. Alcobendas, Spain Main Headquarters Picosun Oy Tietotie 3, 02150 Espoo, Finland Factories: Kirkkonummi, Finland Worldwide OEM agreement Omicron Nanotechnology Resales Russia Scientific Equipment Ltd. Resales Japan Altech Alt Co., Ltd. Resales China Beijing Honoprof Cross-Tech Development Co., Ltd. Resales Italy Nordtest Srl Resales Israel B.G. Technical Support Ltd. Resales India Specialise Instruments Marketing Company Resales Taiwan Dual Signaltech Omega Scientific
Picosun Backgound Background Picosun Oy (Ltd) established in 2003 Pioneering ALD experience since 1974 A recognized need for an entry level ALD reactor and straight-forward transition from R&D to production discovered Mission High quality R&D and production ALD tools for world wide markets Stephen Industries Inc Oy is committed to the development of this kind of new dimension of ALD technology Present situation Picosun Oy manufactures SUNALE R- and P-series ALD process tools for nanotechnology applications
Business Segments SUNALE R-series ALD tools for R&D and pilot production Affordable high quality R&D tools with optional extras Simple construction leads to easy operation and maintenance Multipurpose conformal coating for single wafers, wafer batches, porous substrates, powders and 3D parts SUNALE P-series ALD tools for production Provides growth path for R&D customers Based on same tested technology as SUNALE R-series Primary focus on customers in need of single wafer or wafer batch depositions ALD demo and coating service Free SUNALE coating demonstrations for potential customers Affordable coating service for 3D substrates up to 300 x 300 x 300 mm³
Picosun Board of Directors Board of Directors Ph.D. Tech. Tuomo Suntola, The inventor of ALD method Professor, Ph.D Tech. Lauri Niinistö, one of the key persons in developing Atomic Layer Deposition processes and applications in Academia since late 1970s Professor, Ph.D Jorma Routti, one of the founders of Finnish venture capital and one of Europe's leading technology experts Picosun CEO, Kustaa Poutiainen Picosun Managing director, Juhana Kostamo Picosun CTO, Sven Lindfors
The Inventor of ALD The head of SEMI organization President and CEO Stanley T. Myers (left) presents the European SEMI 2004 award to Dr. Tuomo Suntola (right) at Semicon Europa 2004 exhibition in Munich.
Atomic Layer Deposition 1. Picosun 2. Atomic Layer Deposition 3. ALD in Finland 4. Thin film materials and applications 5. SUNALE ALD process tools
Deposition Conditions Typical temperature Sensitive substrates Processes requiring a lot of activation energy 100 C 200 C 300 C 400 C 500 C Deposition temperature Typical deposition pressure is 1 10 hpa (mbar) Substrate is heated to a selected deposition temperature Deposition pressure is adjusted with inert carrier / purge gas (N 2 or Ar)
Introduction of Precursors into Reaction Chamber Inert gas Precursor sources Reaction space Vacuum pump Precursor A Inert gas Precursor B 1 2 4 3 Pulsing cycle Step 1 Step 2 Step 3 Step 4 Pulse A Purge Pulse B Purge
Step 1: Metal Precursor TMA is Pulsed to the Reaction Space Surplus trimethyl aluminum (TMA) molecule CH 3 CH 3 Al Chemisorption CH 3 OH OH OH OH OH OH Trimethyl aluminum (CH 3 ) 3 Al molecules react with the OH groups on the substrate surface.
Step 2: The Reaction Chamber is Purged with Inert Gas (e.g. N 2 ) CH 3 H H H C H Al Al Al O O O O O O Surplus TMA molecules and methane CH 4 molecules released from surface reactions leave the reaction space.
Step 3: Non-metal Precursor H 2 O is Pulsed to the Reaction Space Surplus water molecule H O H Chemisorption Al Al CH 3 Al O O O O O O H 2 O molecules react with the TMA molecule fragments attached to the substrate surface.
Step 4: The Reaction Chamber is Purged with Inert Gas (e.g. N 2 ) OH OH OH OH OH OH H H C H H Al Al Al Al O O O O O O Surplus H 2 O molecules and methane CH 4 molecules released from the surface reactions leave the reaction space.
Growth of Thin Film by Repeating a Pulsing Cycle Heating Pulse A Purge Pulse B Purge Linear growth Repeat 1...n times Cooling OH OH Al OH Al OH OH Al OH Al + 1 Å / cycle O O O O O O (1 nm = 10 Å) 100 cycles 10 nm 1000 cycles 100 nm
ALD Film Growth Rate Vs. Deposition Temperature
Characteristic ALD
ALD Precursors Inorganic Metalorganic Organometallic Cl Cl Zr Cl Cl Zr O CH 3 CH 3 CH 3 4 Zr O O C(CH 3 ) 3 C(CH 3 ) 3 CH 3 Al CH 3 CH 3 H 3 C Zr CH 3 Metal Halides: Metal alkoxides 4 M F, M Cl, M Br, M I Metal β-diketonates Metal alkyls Metal dialkylamidos Metal cyclopentadienyls Metal amidinates Adv: Thermal stability Reactivity Molecule size Adv: Vapor pressure Disadv: Adv: Reactivity Thermal stability By-products Disadv: By-products Vapor pressure Thermal stability Reactivity Molecule size Vapor pressure Disadv: Availability
Reactor Flow-type Perpedicular flow Reactor showerhead Cross-flow Reactor
Poisoning of Reactive Sites By-products: 10 14 molecules/cm 2 vs. Precursor: 10 17 molecules/pulse (0.5 mg/ 0.1 s pulse) K.-E. Elers, T. Blomberg, M. Peussa, B. Aicthison, S. Haukka, S. Marcus: Film Uniformity in Atomic Layer Deposition / Chem. Vap. Deposition, 12 (2006) 13.
Advantages of ALD Excellent film uniformity even on large substrates Unique film step coverage compared to any other deposition technique Molecular range film thickness control due to self limiting growth mechanism Amorphous aluminum oxide Al 2 O 3 Mikrokemia Oy / University of Helsinki Polycrystalline strontium titanate SrTiO 3 Insulator with a high dielectric constant University of Helsinki
Advantages of ALD Wide range of film materials available Highly repeatable film thickness Extremely accurate composition control of mixed oxides, graded layer and nanolaminates Generally deposited films have less impurities than the films made by other deposition techniques at the same deposition temperature High density and low impurity level of the films enable excellent physical and chemical properties Lower deposition temperature can be used for sensitive substrates than in CVD technique Easy technique for wafer batch processing
ALD in Finland 1. Picosun 2. Atomic Layer Deposition 3. ALD in Finland 4. Thin film materials and applications 5. SUNALE ALD process tools 6. Co-operation partners
Milestones of ALD in Finland
Early ALD Reactors Sven Lindfors and his ALD reactor in 1978
Examples of ALD Reactors Designed in Finland MC 120 CAT ALD reactor Acquired by Picosun Oy Developed in early 1990 s for R&D of heterogeneous catalysts (e.g. US6534431) F-950 ALD reactor Microchemistry Ltd. Developed in 1990 s for flat panel production PULSAR 2000/3000 ALD reactors designed by Microchemistry owned by ASM International, Inc
Examples of ALD Reactors Designed in Finland SUNALE ALD process tools from Picosun
Materials and Applications 1. Picosun 2. Atomic Layer Deposition 3. ALD in Finland 4. Thin film materials and applications 5. SUNALE ALD process tools 6. Co-operation partners
Examples of Thin Film Materials Deposited with ALD Metal nitrides e.g. TiN, NbN - wear-resistant coatings - diffusion barriers - superconductor Metals e.g. Ru, Ir, Pt - electrical conductors - nucleation and adhesion layers Metal oxides e.g. Al 2 O 3, TiO 2, SnO 2, ZnO, HfO 2 - coatings against corrosion (nanolaminates) - diffusion barriers - gas sensors - capacitors for integrated cicuits - gap fill in read heads for hard disks - thin films for optics - metallization in integrated circuits Metal sulfides e.g. ZnS - light emitting materials Typical thickness of a thin film depending on an application 1 nm 100 nm
Intel microprocessors made with 45 nm design features polysilicon k 9 (HfSiO x :N)? Reference: Solid State Technology, November 2007 transistor
Al 2 O 3 grown by ALD from TMA and H 2 O Hitachi Global Storage Technologies TDK 10-20 nm Electrical breakdown strength is 9-10 MV / cm 90 100 V / 100 nm 0.9 1.0 V / nm Atomic Layer Deposition of AlOx for Thin Film Head Gap Applications J. Electrochem. Soc., Volume 148, Issue 9, pp. G465-G471 (September 2001) Ajit Paranjpe, Sanjay Gopinath, Tom Omstead, and Randhir Bubber
MEMS actuator Large Force Electrostatic MEMS Comb Drive Al2O3 and ZnO and is proposed for use as charge dissipative layers HERRNLANN Cari F. ; DELRIO Frank W. ; MILLER David C. ; GEORGE Steven M. ; BRIGHT Victor M. ; EBEL Jack L. ; STRAWSER Richard E. ; CORTEZ Rebecca ; LEEDY Kevin D. ; Sensors and actuators. A, Physical (Sens. actuators, A Phys.) ISSN 0924-4247 Source / Source 2007, vol. 135, no1, pp. 262-272
SUNALE ALD Process Tools 1. Picosun 2. Atomic Layer Deposition 3. ALD in Finland 4. Thin film materials and applications 5. SUNALE ALD process tools 6. Co-operation partners
SUNALE ALD Process Tool Features Extremely versatile processing capabilities packed in compact, handy and lightweight structure Highly customizable reactor structure with variety of source, reaction chamber and wafer transfer options Uniform and ultra-conformal film deposition on 2-8 planar substrates, 4 wafer batches (25 wafers), 3D objects, powders and through porous substrates Process temperatures up to 500 C Precursor sources for gaseous, liquid and solid chemicals. Heated precursor source temperature up to 200 C.
SUNALE ALD Process Tool Features Up to six precursor sources allow wide variety of processes from basic oxides and nitrides to advanced nanolaminates and graded layers Professional ALD software installed in user-friendly touch panel PC Optional substrate loader, vacuum pump, ozone delivery system and nitrogen generator can be bought together with the ALD process tool
SUNALE ALD Process Tool Precursor Source Options Hot feed-throughs into the process chamber Rising temperature profile High-speed ALD valves Efficient purging Picosolid Basic heated source system for low vapor pressure liquids and solids Picosolid Booster heated source system for very low vapor pressure liquids and solids Picohot heated source system for low vapor pressure liquids Picosolution source for high vapour pressure liquids Picosolution source system with ventilated cabinet Picozone ozone delivery system Picogases source system with ventilated cabinet Picogases connection
SUNALE ALD Process Tool Loader Options Picoloader Lift pneumatic elevator Picoloader Handyman manual loader with a load lock and a gate valve Picoloader Semi-Pro automatic loader with a load lock and a gate valve Picoloader Autopilot cassette-to-cassette loader Customized systems integrated with UHV cluster tools and robots Picoloader Semi-Pro automatic loader
SUNALE ALD Process Tool Software and Electronics Options Basic entry-level software and electronics for 2 sources operated with a touch panel PC Advanced multisource software and electronics for up to 6 sources operated with a touch panel PC Separate control cabinet electronics system and a touch screen for customized multisource systems High-precision control of pulse timings Recipes for nanolaminates and graded layers Integrated pulse monitor Data storage and export/import options on CF for recipes and trend charts Standard electronics components for easy maintenance
Important Design Specs IMPORTANT SPECS FOR THE TOOL AND PROCESS FUNCTIONALITY!!! Four separate source lines and inlets with separate MFCs and PTs - Prevents cross-contamination and reaction between different precursors before they enter the reaction chamber - Innovative PT setup with SW comprises pulsing monitoring (easy start-up of new precursor) Hot-wall reaction chamber - The walls are at the same temperature as the substrate - Prevents secondary reaction routes inside the reaction chamber that would result in the loss of self-limited growth mechanism of ALD - Ensures the best particle performance and long maintenance cycles Isolated reaction chamber mounted inside a vacuum chamber - Metal-metal sealing surface and pressure control keeps all process gases inside the reaction chamber and no condensation occurs in the vacuum chamber walls - Ensures that no corrosion occurs on the vacuum chamber walls - No maintenance needed for the vacuum chamber - Makes easy maintenance for the reaction chamber Gas flow perpendicular to the substrate [i], [ii] - Enables uniform film deposition with challenging precursor chemistries - Enables higher growth rate than tangential flow (cross-flow) reactor Heated source for solid and liquid precursors - Integrated particle filter for solid powders - Replaceable cartridge for powder and liquids inside the source (no need to disassemble the source between different precursors)
Safety IMPORTANT SPECS FOR SAFETY!!! Reaction chamber mounted inside a cold-wall vacuum chamber - Prevents possible injuries by burning hands or equipment on the hot reaction chamber lid - Isolated reaction chamber ensures that all hazardous chemicals stay inside the reaction chamber and no condensation occurs on cold vacuum chamber walls Automatic opening of the reaction chamber controlled with a touch panel - No need to touch the reaction chamber lid when the reactor is heated Software and hardware interlocks for hardware - Software based pressure monitoring of the vacuum chamber with interlock limits - Hardware interlock of the vacuum chamber over pressure - Hardware interlock for overheating (touch safety: 60 C) of outer vacuum chamber wall - Earthquake support legs of the reactor - Emergency Off (EMO) buttons - Hardware interlock of pneumatic lift crash Software and hardware interlocks of hazardous chemicals - Gas sensors to detect possible NH 3 and O 3 leaks - Gas cabin for safe handling of high pressure gases and safe purging of gas lines - TMA (trimethyl aluminium) cabin for pyrophoric chemicals - Normally closed pneumatic valves (all valves closed if the pneumatic line burns)
Examples of Processes Our Customers Have Tested with SUNALE ALD Process Tools 1) TMA + H 2 O Al 2 O 3 2) AlCl 3 + H 2 O Al 2 O 3 3) Ta(OEt) 5 + H 2 O Ta 2 O 5 4) TaCl 5 + H 2 O Ta 2 O 5 5) TiCl 4 + H 2 O TiO 2 6) Ti(OiPr) 4 + H 2 O TiO 2 7) Ir(acac) 3 + O 2 Ir (1,2 8) Ir(MeCp)(CHD) + O 2 Ir (2 9) RuCp 2 + O 2 Ru (2 10)ZnEt 2 + H 2 O ZnO 11)(Ga(NMe 2 ) 3 ) 2 + H 2 O Ga 2 O 3 12)TEMAH + H 2 O HfO 2 1) T. Pilvi, M. Kemell, T. Hatanpää, H. Su, J. Pearson, S. Nenonen, M. Leskelä, and M. Ritala, ALD of Ir on Microchannel Plates for X-ray Optic Applications, Presented at AVS 7th International Conference on Atomic Layer Deposition, San Diego, USA, June 24-27, 2007. 2) T. Aaltonen, Atomic Layer Deposition of Noble Metal Thin Films, Doctoral dissertation, University of Helsinki, Faculty of Science, Department of Chemistry, April 2005.
Examples of Film Results Al 2 O 3 from TMA and H 2 O, 100 mm Si-wafer Deposition temperature: 300 C Thickness: 47.2 nm 1-σ non-uniformity (100 * ave. / stdev.): 0.21 % TiO 2 from TiCl 4 and H 2 O, 100 mm Si-wafer Deposition temperature: 300 C Thickness: 117 nm 1-σ non-uniformity (100 * ave. / stdev.): 0.6 % ZnO from DEZ and H 2 O, 100 mm Si-wafer Deposition temperature: 300 C Thickness: 28.1 nm 1-σ non-uniformity (100 * ave. / stdev.): 0.94 %
Examples of Film Results Al 2 O 3 from TMA and H 2 O Deposition temperature: 300 C Al 2 O 3 thickness: 80 nm Trenches: 94 µm deep, 7-7.2 µm wide, aspect ratio > 12 100 % conformality within SEM measurement precision SEM-pictures: Courtesy of VTT, Finland
Batch Reactor Results Thickness and RI Variation Between Slots 60 2 50 1,8 Thickness [nm] 40 30 20 10 1,6 1,4 1,2 Refractive index Thickness RI 0 0 5 10 15 20 25 Slot number This figure depicts how there is hardly any difference in thickness and RI values between slots. There are five data points in each slot number. 1
Batch Reactor Results Run to Run Repeatability 60 2 Average thickness [nm] 50 40 30 20 10 1,8 1,6 1,4 1,2 Refractive index Thickness RI 0 1 0 1 2 3 4 5 6 7 8 9 10 Batch number This figure depicts repeatability between runs. Each data point is an average of 5 points of single wafer. All data points represent the same slot of batch.
Batch Reactor Results Particle Level These figures depict the total particle level for Al2O3 process at a customer site. In each deposition the thickness of the Al2O3 film was 50 nm. All the data points represent the same slot of the batch.
Batch Reactor Results Film Uniformity in a Batch Chamber Specification Measured Data Within Wafer < 1 % 0.6 % Within Batch < 2 % 1.0 % Batch to Batch < 2 % 0.3 % Uniformity: 1σ, STD, 9 points in each wafer (100 mm)
SUNALE ALD Process Tools 1. Picosun 2. Atomic Layer Deposition 3. ALD in Finland 4. Thin film materials and applications 5. SUNALE ALD process tools 6. Co-operation partners
Networking with Co-Operation Partners Partnering Companies TEKNILLINEN KORKEAKOULU New Source chemicals Thin film materials Processes Applications Universities Research Institutes Customer Companies