Selecting the Right ISSI Industrial Grade Memory



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Selecting the Right ISSI Industrial Grade Memory Fastest Random Access Memory Easy Interface, Low Power Access <20ns Lower cost/bit No DRC* 288-576Mb 18-72Mb Ultra Low Power Higher Density RLDRAM 10-20ns Synch SRAM <5ns Asynch SRAM 64Kb-16Mb Pseudo SRAM 8Mb-64Mb *DRC = DRAM Controller Long-term support Higher Density Low power SDR/DDR1 16Mb-512Mb Highest density & bandwidth Mobile DRAM 16Mb-1Gb DDR2 256Mb-2Gb Long-Term Support from ISSI - replace other vendors End Of Life (EOL) products Easy Cross Reference Free Samples Special Support for Sync. SRAMs Email part numbers for other vendors EOL product to find equivalent ISSI part number. Email: DRAM@issi.com or SRAM@issi.com Request a free sample of the equivalent ISSI product Save $$$ by replacing Samsung EOL products with ISSI Synchronous SRAMs with no need for Last Time Buys or system redesigns

Industrial Systems Requiring Long-life Support for Memory Design & Software Integration Production Ramp Volume Production End Of Life Approval 12-18 months 6-12 months 2-5 years 5+ years Typical Industrial System Product Life Cycle High-mix, low volume industrial market segments have special needs in terms of industry specifications, strict qualification cycles, long-life requirements (without product changes permitted), and extremely long in-field use with the highest reliability standards expected. The challenge for memory vendors is to ensure that by the end of the design cycle, they meet the requirement for long-term support covering extended production time with minimal design changes. ISSI s strategy is based on supporting our customer s needs for these long-life markets, so you can rely on ISSI for all your SRAM and DRAM needs. Select ISSI for Your Industrial Memory Applications! Industrial Electronics Requirements Long term support Temperature Range: -40 C to +85 C Leaded Package Option x32 Organization Support for 5V products Rugged products high ESD tolerant Support for mature products Roadmaps for long-term support ISSI Solutions 7 to 10 years is typical life for an ISSI product All ISSI products are designed and tested for industrial temperature ISSI supports leaded package as well as ROHS ISSI offers broadest range of x32 products and aligns with typical 32-bit embedded processors ISSI has 5V SRAMs and EDO/FP DRAMs ISSI test all devices for HBM and MM. Min spec 2KV HBM ISSI still support 64Kb SRAMs and all SDRAMs ISSI offers optional die shrink products for long term support & cost down roadmap

SDR Ordering Options Density Config. Part Number (1) Package Temperature Grade TSOP2 BGA Com. Ind. Auto. 16Mbit 1M x 16 IS42S16100E, IS42S16100F 64Mbit 4M x 16 IS42S16400F, IS42S16400J 2M x 32 IS42S32200E, (IS42S32200L) 16M x 8 IS42S81600E, (IS42S81600F) 128Mbit 8M x 16 IS42S16800E, (IS42S16800F) 4M x 32 IS42S32400E, (IS42S32400F) 32M x 8 IS42S83200D, (IS42S83200G) 256Mbit 16M x 16 IS42S16160D, (IS42S16160G) 8M x 32 IS42S32800D, (IS42S32800G) 64M x 8 IS42S86400B, IS42S86400D 512Mbit 32M x 16 IS42S16320B, IS42S16320D 16M x 32 IS42S32160C, (IS42S32160D) DDR Ordering Options Package Temperature Grade Density Config. Part Number (1) TSOP2-66 BGA-60 BGA-144 Com. Ind. Auto. 64Mbit 4M x 16 IS43R16400B 128Mbit 8M x 16 IS43R16800CC, (IS43R16800E) 4M x 32 IS43R32400D, (IS43R32400E) 32M x 8 IS43R83200B, (IS43R83200D) 256Mbit 16M x 16 IS43R16160B, (IS43R16160D) 8M x 32 IS43R32800B, (IS43R32800D) 64M x 8 IS43R86400D 512Mbit 32M x 16 IS43R16320D 16M x 32 IS43R32160D Mobile DDR Ordering Options Density Config. Part Number 32Mbit 64Mbit 128Mbit 256Mbit 512Mbit 2M x 16 IS43LR16200C 1M x 32 IS43LR32100C 4M x 16 IS43LR16400B 2M x 32 IS43LR32200B 8M x 16 IS43LR16800F 4M x 32 IS43LR32400F 16M x 16 (IS43LR16160F) 8M x 32 (IS43LR32800F) 32M x 16 IS43LR16320B 16M x 32 IS43LR32160B Mobile SDRAM Ordering Options Density Config. Part Number 16M 1M x 16 IS42xx16100G 32M 2M x 16 IS42xx16200C 1M x 32 IS42xx32100C 64M 4M x 16 IS42xx16400K 2M x 32 IS42xx32200K 128M 8M x 16 IS42xx16800G 4M x 32 IS42xx32400G 256M 16M x 16 IS42xx16160D, (IS42xx16160E) 8M x 32 IS42xx32800D, (IS42xx32800E) 512M 32M x16 IS42xx16320D 16M x 32 IS42xx32160C, IS42xx32160D Notes: 1. Automotive grade SDR part numbers begin with IS45S and Automotive grade DDR part numbers begin with IS46R. 2. xx: VM for Vdd = 1.8V, RM for Vdd = 2.5V, SM for Vdd = 3.3V. Production alternatives may be available. 3. Part numbers in parenthesis are sampling. All others in mass production. 4. Automotive grade Mobile DDR part numbers begin with IS46LR.

DDR2 SDRAM Product Features: Single supply voltage of 1.8V ± 0.1V SSTL_18 compatible inputs Bidirectional differential or single-ended data strobe option Data masking per byte on Write commands Programmable burst length of 4 or 8 Programmable CAS Latency of 3, 4, 5 or 6 Auto-Refresh and Self-Refresh Modes OCD (Off-Chip Driver Impedance Adjustment) ODT (On Die Termination) supported Package options: 126-ball BGA for x32, 84-ball BGA for x16, 60-ball BGA for x8 Long-Term Support for all densities Industrial and Automotive grade temperatures DDR2 SDRAM Ordering Options Density Config. Part No. Speeds Pkg. Ordering Options 256M 512M 1G 2G 8Mx32 IS43DR32801A DDR2-400B, DDR2-533C BGA(126) -5BBL, -5BBLI, -37CBL, -37CBLI 8Mx32 IS46DR32801A DDR2-400B BGA(126) -5BBLA1, -5BBLA2 16Mx16 IS43DR16160A DDR2-400B, DDR2-533C, DDR2-667D, DDR2-800E BGA(84) -5BBLI, -37CBL, -37CBLI, -3DBL, -3DBLI, -25EBL 16Mx16 IS46DR16160A DDR2-400B, DDR2-533C BGA(84) -5BBLA1, -37CBLA1, -5BBLA2 32Mx8 IS43DR83200A DDR2-533C BGA(60) -37CBLI 32Mx16 IS43DR16320B DDR2-533C, DDR2-667D, DDR2-800E, DDR2-800D BGA(84) -37CBL, -37CBLI, -3DBL, -3DBLI, -25EBL, -25EBLI, -25DBL, -25DBLI 32Mx16 IS46DR16320B DDR2-533C, DDR2-667D BGA(84) -37CBLA1, -3DBLA1, -37CBLA2, -3DBLA2 64Mx8 IS43DR86400B DDR2-533C, DDR2-667D, DDR2-800E, DDR2-800D BGA(60) -37CBLI, -3DBL, -3DBLI, -25EBLI, -25DBLI 64Mx16 IS43DR16640A DDR2-667D, DDR2-800E, DDR2-800D BGA(84) -3DBL, -3DBLI, -25EBL, -25EBLI, -25DBL, -25DBLI 64Mx16 IS46DR16640A DDR2-667D BGA(84) -3DBLA1, -3DBLA2 128Mx8 IS43DR81280A DDR2-667D, DDR2-800E, DDR2-800D BGA(60) -3DBL, -3DBLI, -25EBLI, -25DBLI 128Mx16 IS43DR16128 DDR2-667D BGA(84) -3DBL, -3DBLI 128Mx16 IS46DR16128 DDR2-667D BGA(84) -3DBLA1, -3DBLA2 Notes: 1. Automotive grade DDR2 part numbers begin with IS46DR. 2. Contact ISSI for other ordering options. RLDRAM Memory Reduced Latency (RL) DRAM is a low-latency, high-bandwidth memory technology that is designed for high-performance applications such as networking, test equipment and other performance critical applications Density Common I/O / Separate I/O Config. Part Number SIO x9 IS49NLS93200 x18 IS49NLS18160 288Mbit x9 IS49NLC93200 CIO x18 IS49NLC18160 x36 IS49NLC36800 SIO x9 IS49NLS96400 x18 IS49NLS18320 576Mbit x9 IS49NLC96400 CIO x18 IS49NLC18320 x36 IS49NLC36160 Notes: 144-ball BGA Package: Leaded/Lead-free Temperature grades: Commercial/Industrial Speeds: 300MHz, 400MHz RLDRAM is a registered trademark of Micron, Technology, Inc.

Asynchronous SRAMs Density Config. Legacy High Speed Ultra Low Power PSRAM/CRAM 64Kb x8 256Kb x8 512Kb x16 1Mb x8 x16 2Mb x8 x16 4Mb x8 x16 x8 8Mb x16 x32 x8 16Mb x16 x32 32Mb x16 64Mb x16 Voltage* 5V 1.65-3.6V 1.65-3.6V 1.8V, 2.7-3.6V PSRAM 1.8V CRAM Speed*(typ) HS 10-12ns HS 8-20ns LP 25-55ns LP 25-35ns 35-55ns 70ns SOJ SOJ SOJ TSOP (8Mb only) Package(s)* TSOP TSOP TSOP BGA(48) PSRAM BGA (8Mb only) mbga mbga BGA(54) CRAM *Check datasheets for specific part number. Key = High Speed Product = High Speed + Low Power options = Ultra Low Power Synchronous SRAMs Density 2Mb 4Mb 8Mb 18Mb 36Mb 72Mb Config. x18 PipeLine / Flow Through No Wait (equiv to ZBT ) QUAD / DDR-II QUADP / DDR-IIP x32 x36 x18 x32 x36 x18 x32 x36 x18 x36 x72 x18 x36 x18 x36 Voltage* 3.3V/2.5V 3.3V/2.5V 1.8V 1.8V Speed* 133-250 MHz 133-250 MHz 250-333MHz 300-550MHz TQFP TQFP Package(s)* PBGA PBGA BGA(165) BGA(165) BGA BGA Equivalent to QDR /QDR-II and DDR/DDR-II ZBT is a trademark of Integrated Device Technology Inc. QDR SRAM is a trademark of the QDT Consortium

Innovative Design Reinforces ISSI s Long-Term Commitment to SRAMs Error Correction Code (ECC) High Speed Low Power SRAMs This first Error Correction Code (ECC) based Asynchronous SRAM meets high quality requirements in automotive, industrial, military-aerospace, and other applications. A0-A17 Decoder Memory Lower IO - Array 256Kx8 ECC - Array 256K x4 Memory Upper IO - Array 256Kx8 ECC - Array 256K x4 IO0-7 IO8-15 8 8 I/O Data Circuit 8 8 ECC ECC 12 12 8 4 8 4 Column I/O /CE /OE /WE /UB /LB Control Circuit Features: Independent ECC with hamming code for each byte Detect and correct one bit error per each byte Better reliability than parity code schemes which can only detect an error but not correct an error Backward Compatible: Drop in replacement to current in industry standard devices (without ECC) 2Mb, 4Mb, 8Mb Asynch SRAMs products Synchronous SRAM products in design Ultra Low Power SRAMs ISSI s family of Ultra-Low Power (ULP) SRAMs offer significant power savings compared to other versions. Products are offered in densities of 1Mb, 2Mb, 4Mb, 8Mb and 16Mb, with options for x8 or x16 in a range of package types. Temperature Support IS62WV1288DBLL 128Kx8 Ultra Low Power Industrial (-40 o C to +85 o C) IS65WV1288DBLL 128Kx8 Ultra Low Power Automotive (-40 o C to +125 o C) Comments Standby Current 4 ma 18 ma Typical value 0.6 ma Operating Current 8 ma 12 ma Typical value 4 ma BEST in the INDUSTRY! Data Retention Current 4 ma 18 ma Typical value 0.5 ma Packaging TSOP-I (32 pins) stsop (32 pins) SOP (32 pins) BGA (36 pins) TSOP-I (32 pins) stsop (32 pins) SOP (32 pins) BGA (36 pins) Speed 45 ns** 45 ns Lead-free and Leaded, RoHS Compliant ** 35ns Refer to datasheet

Mobile SDRAMs - Ideal for Power Sensitive Applications ISSI s Low Power Mobile SDRAMs are ideal for applications where both high performance and low power consumption are important. Power Saving Features Special Mobile Features* 3 Ultra-low Standby Current * 2 Low Operating Current* 1 Synchronous Operation Lower V DD 2.5V or 1.8V Synchronous Operation Lower V DD 1.8V Synchronous Operation 3.3V SDRAMs Low Voltage SDRAMs Mobile SDRAMs *1. Mobile SDRAM Operating Current typically 33-50% lower than standard SDRAM *2. Mobile SDRAM Standby Current typically 90% lower than standard SDRAM *3. Special Mobile Features reduce power even more! Mobile Features Temperature Compensated Self Refresh (TCSR) Partial Array Self Refresh (PASR) Deep Power Down (DPD) Drive Strength (DS) Adjust refresh rate based on temperature to minimize power consumption at lower temperatures Eliminates unnecessary refresh to minimize power Lowest power state when data retention is not required Adjust output drive to actual bus loading to minimize power Chipset Support for Memory Types Chipset FPGA SRAM DRAM Asynch. Synch Pseudo SDR/DDR LP DDR DDR2 RLDRAM Low-Mid End High End ASIC MCU Low-End (no DRC) High End MPU DSP Network Processor

ISSI prefix Product Family Operating Voltage Range/Product Type Density/Configuration Die Rev/Voltage Range Ordering Information for ISSI SRAM Devices IS 61 WV 12816 DBLL 10 T L I TR Packing Option Temperature Grade Solder Type Package Code Speed (ns or MHz) SRAM Product Family 61/63 = High Speed 62 = Low Power 64 = Automotive High Speed 65 = Automotive Low Power 66 = Pseudo SRAM 67 = Automotive PSRAM Density/Configuration Example: 25636 = 256Kx36 51216 = 512Kx16 1M36 = 1Mx36 Die Rev/Voltage Range Die Rev Blank-Z Voltage Range (WV) ALL = 1.65V to 2.2V BLL = 2.5V to 3.6V Operating Voltage Range/ Product Type Asynchronous SRAM C = 5V LV = 3.3V WV = Wide Voltage Range Packing Option Blank = Tray or Tube TR = Tape & Reel Temperature Grade Blank = Commercial (0 C to 70 C) I = Industrial (-40 C to 85 C) A1 = Automotive (-40 C to 85 C) A2 = Automotive (-40 C to 105 C) A3 = Automotive (-40 C to 125 C) Synchronous SRAM P = Pipeline, F = Flowthrough NLP/NLF/NVP/NVF = No-Wait Option LP/LF: Vcc = 3.3V, VccQ = 3.3V/2.5V VP/VF: Vcc = 2.5V, VccQ = 2.5V QD = QUAD, DD = DDR-II Common I/O: Vcc = 1.8V, VccQ = 1.8V/1.5V Solder Type Blank = SnPb L = Lead-free (RoHS Compliant) Package Code B, B1, B2, B3 = BGA CT = Copper TSOP H = stsop J = 300-mil SOJ K = 400-mil SOJ LQ = LQFP M, M3, = BGA Q = SOP T/T2 = TSOP TQ = TQFP U = SOP Speed (ns or MHz) Example: 8 = 8ns 200 = 200MHz Ordering Information for ISSI DRAM Devices IS 45 S 16 160 D 7 B L A2 TR ISSI prefix Product Family Operating Voltage Range/Product Type Speed DRAM Product Family Bus Width Die rev. 41 = Asynchronous 42 = SDR Commercial/Industrial grade No. of Words 43 = DDR & DDR2 Commercial/Industrial grade 45 = SDR Automotive grade Die revision 46 = DDR & DDR2 Automotive grade Blank-Z 49 = RLDRAM Operating Voltage Range/Product Type Asynchronous: Fast Page and EDO C = 5V LV = 3.3V Synchronous S = 3.3V SDR SM = 3.3V mobile SDR RM = 2.5V mobile SDR VM = 1.8V mobile SDR VS = 1.8V SDR R = 2.5V DDR or 2.5V SDR LR =1.8V mobile DDR DR =1.8V DDR2 Bus Width 8 = x8 16 = x16 32 = x32 Number of Words 100 = 1M 200 = 2M 160 = 16M 320 = 32M Package Code Packing option Temperature Grade Solder type Packing Option Blank = trays TR = Tape & Reel Package Code Solder Type B = BGA Blank = SnPb CT = Copper TSOP N = NiPdAu plating (RoHS Compliant) L = 100% matte Sn for non-bga (RoHS Compliant) T = TSOP L = SnAgCu for BGA (RoHS Compliant) Speed (clock cycle time) -4 = Up to 250Mhz -5 = Up to 200Mhz -6 = Up to 166Mhz -7 = Up to 143Mhz -75E = Up to 133Mhz @ CL = 2 DDR2 only -5B = DDR2-400B (up to 200Mhz @ CL = 3) -37C = DDR2-533C (up to 266Mhz @ CL = 4) -3D = DDR2-667D (up to 333Mhz @ CL = 5) -25E = DDR2-800E (up to 400Mhz @ CL = 6) -25D = DDR2-800D (up to 400Mhz @ CL = 5) Temperature Grade Blank = Commercial (0 o C to +70 o C) I = Industrial (-40 o C to +85 o C) A1 = Automotive (-40 o C to +85 o C) A2 = Automotive (-40 o C to +105 o C)

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