TSAL64 High Power Infrared Emitting Diode, 94 nm, GaAlAs/GaAs DESCRIPTION 94 8389 TSAL64 is an infrared, 94 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in a blue-gray plastic package. FEATURES Package type: leaded Package form: T-1¾ Dimensions (in mm): 5 Peak wavelength: λ p = 94 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 25 Low forward voltage Suitable for high pulse current operation Good spectral matching with Si photodetectors Compliant to RoHS directive 22/95/EC and in accordance to WEEE 22/96/EC Halogen-free according to IEC 61249-2-21 definition APPLICATIONS Infrared remote control units with high power requirements Free air transmission systems Infrared source for optical counters and card readers PRODUCT SUMMARY COMPONENT I e (mw/sr) ϕ (deg) λ P (nm) t r (ns) TSAL64 4 ± 25 94 8 Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TSAL64 Bulk MOQ: 4 pcs, 4 pcs/bulk T-1¾ MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V R 5 V Forward current I F ma Peak forward current t p /T =.5, t p = µs I FM 2 ma Surge forward current t p = µs I FSM 1.5 A Power dissipation P V 16 mw Junction temperature T j C Operating temperature range T amb - 4 to + 85 C Storage temperature range T stg - 4 to + C Soldering temperature t 5 s, 2 mm from case T sd 26 C Thermal resistance junction/ambient J-STD-51, leads 7 mm soldered on PCB R thja 23 K/W Document Number: 8111 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com Rev. 1.8, 29-Jun-9 1
TSAL64 High Power Infrared Emitting Diode, 94 nm, GaAlAs/GaAs 18 12 P V - Power Dissipation (mw) 16 14 12 8 R thja = 23 K/W 6 4 2 1 2 3 4 5 6 7 8 9 21211 T amb - Ambient Temperature ( C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature I F - Forward Current (ma) 8 R thja = 23 K/W 6 4 2 1 2 3 4 5 6 7 8 9 21212 T amb - Ambient Temperature ( C) Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I F = ma, t p = 2 ms V F 1.35 1.6 V Forward voltage I F = 1 A, t p = µs V F 2.6 3 V Temperature coefficient of V F I F = 1 ma TK VF - 1.8 mv/k Reverse current V R = 5 V I R 1 µa Junction capacitance V R = V, f = 1 MHz, E = C j 25 pf Radiant intensity I F = ma, t p = 2 ms I e 25 4 125 mw/sr I F = 1 A, t p = µs I e 22 31 mw/sr Radiant power I F = ma, t p = 2 ms φ e 35 mw Temperature coefficient of φ e I F = 2 ma TKφ e -.6 %/K Angle of half intensity ϕ ± 25 deg Peak wavelength I F = ma λ p 94 nm Spectral bandwidth I F = ma Δλ 5 nm Temperature coefficient of λ p I F = ma TKλ p.2 nm/k Rise time I F = ma t r 8 ns Fall time I F = ma t f 8 ns Virtual source diameter Method: 63 % encircled energy d 2.2 mm www.vishay.com For technical questions, contact: emittertechsupport@vishay.com Document Number: 8111 2 Rev. 1.8, 29-Jun-9
High Power Infrared Emitting Diode, 94 nm, GaAlAs/GaAs TSAL64 BASIC CHARACTERISTICS 1 1 I - Forward Current (A) F 1.1.5.5 I FSM = 1 A (Single Pulse) t p /T =.1 - Radiant Power (mw) e Φ 1 1 1-1 1. 1-2 1-1 1 1 1 1 2 96 11987 t p - Pulse Duration (ms) Fig. 3 - Pulse Forward Current vs. Pulse Duration 1362.1 1 1 1 1 2 1 3 1 4 Fig. 6 - Radiant Power vs. Forward Current 1 4 1.6 1 3 1 2 1 1 t P = µs t P /T =.1 Φ e rel I e rel ; 1.2.8.4 I F = 2 ma 1 1 2 3 4 136 V F - Forward Voltage (V) Fig. 4 - Forward Current vs. Forward Voltage 94 7993-1 1 5 T amb - Ambient Temperature ( C) 14 Fig. 7 - Relative Radiant Intensity/Power vs. Ambient Temperature I - Radiant Intensity (mw/sr) e 1 1.1 1 1 1 1 2 1 3 1 4 96 12154 Fig. 5 - Radiant Intensity vs. Forward Current - Relative Radiant Power e rel Φ 1.25 1..75.5.25 14291 89 I F = ma 94 λ - Wavelength (nm) 99 Fig. 8 - Relative Radiant Power vs. Wavelength Document Number: 8111 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com Rev. 1.8, 29-Jun-9 3
TSAL64 High Power Infrared Emitting Diode, 94 nm, GaAlAs/GaAs 1 2 3 I e rel - Relative Radiant Intensity 1..9.8.7 4 5 6 7 8 ϕ - Angular Displacement 1433.6.4.2 Fig. 9 - Relative Radiant Intensity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters A C (4.3) Ø 5.8 ±.15 R 2.49 (sphere) 1 min. 8.7 ±.3 7.7 ±.15 <.7 35.1 ±.55.6 +.2 -.1 Area not plane Ø 5 ±.15 technical drawings according to DIN specifications.5 +.15 -.5.5 +.15 -.5 2.54 nom. Drawing-No.: 6.544-5259.7-4 Issue: 4; 19.5.9 1434 www.vishay.com For technical questions, contact: emittertechsupport@vishay.com Document Number: 8111 4 Rev. 1.8, 29-Jun-9
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