A B LOW NOISE JFET QUAD OPERATIONAL AMPLIFIERS WIDE COMMONMODE (UP TO V + CC ) AND DIFFERENTIAL VOLTAGE RANGE LOW INPUT BIAS AND OFFSET CURRENT LOW NOISE e n = 15nV/ Hz (typ) OUTPUT SHORTCIRCUIT PROTECTION HIGH INPUT IMPEDANCE J FET INPUT STAGE LOW HARMONIC DISTORTION :.1% (typ) N DIP14 (Plastic Package) INTERNAL FREQUENCY COMPENSATION LATCH UP FREE OPERATION HIGH SLEW RATE : 13V/µs (typ) D SO14 (Plastic Micropackage) DESCRIPTION The, A and B are high speed J FET input quad operational amplifiers incorporating well matched, high voltage J FET and bipolar transistors in a monolithic integrated circuit. The devices feature high slew rates, low input bias and offset currents, and low offset voltage temperature coefficient. ORDER CODE Package Part Number Temperature Range N D M/AM/BM 55 C, +5 C I/AI/BI 4 C, +5 C C/AC/BC C, +7 C Example : IN N=Dual in Line Package (DIP) D=Small Outline Package (SO) also available in Tape & Reel (DT) PIN CONNECTIONS (top view) Output 1 1 14 Output 4 Inverting Input 1 2 13 Inverting Input 4 Noninverting Input 1 3 + + Noninverting Input 4 VCC+ 4 11 VCC Noninverting Input 2 5 + + Noninverting Input 3 Inverting Input 2 6 9 Inverting Input 3 Output 2 7 8 Output 3 March 21 1/11
A B SCHEMATIC DIAGRAM V CC Noninverting input Inverting input Ω 2Ω Output 3k Ω 8.2k 1.3k 35k 1.3k 35k Ω V CC ABSOLUTE MAXIMUM RATINGS Symbol Parameter M, AM, BM I, AI, BI C, AC, BC Unit V CC Supply voltage note 1) ±18 V V i Input Voltage note 2) ±15 V V id Differential Input Voltage note 3) ±3 V P tot Power Dissipation 68 mw Output Shortcircuit Duration note 4) Infinite T oper Operating Freeair Temperature Range 55 to +5 4 to +5 to +7 C T stg Storage Temperature Range 65 to +15 C 1. All voltage values, except differential voltage, are with respect to the zero reference level (ground) of the supply voltages where the zero reference level is the midpoint between V + CC and V CC. 2. The magnitude of the input voltage must never exceed the magnitude of the supply voltage or 15 volts, whichever is less. 3. Differential voltages are the noninverting input terminal with respect to the inverting input terminal. 4. The output may be shorted to ground or to either supply. Temperature and/or supply voltages must be limited to ensure that the dissipation rating is not exceeded 2/11
A B ELECTRICAL CHARACTERISTICS V CC = ±15V, (unless otherwise specified) Symbol V io Parameter Input Offset Voltage (R s = 5Ω) T min T amb T max A B A B I,M,AC,AI,AM, BC,BI,BM C Min. Typ. Max. Min. Typ. Max. 3 3 1 6 3 13 7 5 3 DV io Input Offset Voltage Drift µv/ C Input Offset Current note 1) I io 5 T min T amb T max 4 Input Bias Current note 1 I ib 2 2 T min T amb T max 2 A vd SVR I CC V icm CMR I os ±V opp SR t r K ov Large Signal Voltage Gain (R L =2kΩ,V o =±V) 5 T min T amb T max 25 Supply Voltage Rejection Ratio (R S = 5Ω) 8 T min T amb T max 8 2 25 15 86 7 7 Supply Current, no load, per amplifier 1.4 2.5 T min T amb T max 2.5 Input Common Mode Voltage Range Common Mode Rejection Ratio (R S = 5Ω) 8 T min T amb T max 8 Output Shortcircuit Current T min T amb T max Output Voltage Swing T min T amb T max RL = 2kΩ RL = kω RL = 2kΩ RL = kω ±11 +15 86 7 7 4 6 6 13.5 13 5 3 2 2 2 86 ±11 +15 Slew Rate () V in = V, R L =2kΩ,C L = pf, unity gain 8 13 8 13 1.4 2.5 2.5 86 4 6 6 13.5 Rise Time () V in = 2mV, R L =2kΩ,C L = pf, unity gain.1.1 Overshoot () V in = 2mV, R L =2kΩ,C L = pf, unity gain GBP Gain Bandwidth Product () MHz V in = mv, R L =2kΩ,C L = pf, f= khz 2 3 2 3 R i Input Resistance Ω Unit mv pa na pa na V/mV db ma V db ma V V/µs µs % 3/11
A B I,M,AC,AI,AM, C Symbol Parameter BC,BI,BM Unit Min. Typ. Max. Min. Typ. Max. THD Total Harmonic Distortion () % f= 1kHz, R L =2kΩ,C L = pf, A v = 2dB,.1.1 V o =2V pp e n Equivalent Input Noise Voltage nv R S = Ω, f = 1KHz 15 15 Hz m Phase Margin 45 45 degrees V o1 /V o2 Channel separation A v = 1. The input bias currents are junction leakage currents which approximately double for every C increase in the junction temperature. db 4/11
A B MAXIMUM PEAKTOPEAK OUTPUT VOLTAGE versus FREQUENCY MAXIMUM PEAKTOPEAK OUTPUT VOLTAGE versus FREQUENCY MAXIMUM PEAKTOPEAK OUTPUT VOLTAGE versus FREQUENCY MAXIMUM PEAKTOPEAK OUTPUT VOLTAGE versus FREE AIR TEMP. MAXIMUM PEAKTOPEAK OUTPUT VOLTAGE versus LOAD RESISTANCE MAXIMUM PEAKTOPEAK OUTPUT VOLTAGE versus SUPPLY VOLTAGE MAXIMUM PEAKTOPEAKOUTPUT VOLTAGE (V) 3 25 2 15 5 R L =kω 2 4 6 8 14 16 SUPPLY VOLTAGE ( V) 5/11
A B INPUT BIAS CURRENT versus FREE AIR TEMPERATURE LARGE SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION versus FREE AIR TEMP. INPUT BIAS CURRENT (na) V CC = 15V 1.1.1 5 25 25 5 75 5 TEMPERATURE ( C) DIFFERENTIAL VOLTAGE AMPLIFICATION (V/V) 4 2 4 2 V CC = 15V V 4 O = V 2 R =2kΩ L 1 75 5 25 25 5 75 5 TEMPERATURE ( C) LARGE SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION AND PHASE SHIFT versus FREQUENCY TOTAL POWER DISSIPATION versus FREE AIR TEMPERATURE DIFFERENTIAL VOLTAGE AMPLIFICATION(V/V) 1 PHASE SHIFT (right sca le) R = 2kΩ L C L = pf V CC = 15V T amb = +5 C 1K K K 1M M FREQUENCY (Hz) DIFFERENTIAL VOLTAGE AMPLIFICATION (left scale) 18 9 TOTAL POWER DISSIPATION(mW) 25 225 2 175 15 5 75 5 25 V CC = No signal No load 15V 75 5 25 25 5 75 5 TEMPERATURE ( C) SUPPLY CURRENT PER AMPLIFIER versus FREE AIR TEMPERATURE COMMON MODE REJECTION RATIO versus FREE AIR TEMPERATURE SUPPLY CURRENT (ma) 2. 1.8 1.6 1.4 1.2 1..8.6.4.2 V CC = No signal No load 15V 75 5 25 25 5 75 5 TEMPERATURE ( C) COMMON MODE MODE REJECTION RATIO (db) 89 88 87 86 85 84 83 75 R L =kω V CC = 15V 5 25 25 5 75 5 TEMPERATURE ( C) 6/11
A B VOLTAGE FOLLOWER LARGE SIGNAL PULSE RESPONSE OUTPUT VOLTAGE versus ELAPSED TIME INPUT AND OUTPUT VOLTAGES (V) 6 4 2 2 4 6 OUTPUT V CC = 15V R L =2kΩ C L = pf T amb =+25 C.5 1 1.5 2 2.5 3 3.5 TIME (µs) INPUT OUTPUT VOLTAGE (mv) 28 24 2 16 8 4 4 OVERSHOOT 9% V = 15V CC R % L =2kΩ T t amb = +25 C r.1.2.3.4.5.6.7 TIME ( µs) EQUIVALENT INPUT NOISE VOLTAGE versus FREQUENCY TOTAL HARMONIC DISTORTION versus FREQUENCY EQUIVALENT INPUT NOISE VOLTAGE (nv/vhz) 7 6 5 4 3 2 V CC = 15V A V = R S = Ω 4 4 1k 4k k 4k k FREQUENCY (Hz) TOTAL HARMONIC DISTORTION (%) 1.4.1.4 VV CC = CC = 15V 15V AA V V =1 =1 VV O(rms) O(rms) =6V =6V T amb T amb = = +25 C.1.4.1 4 1k 4k k 4k k FREQUENCY (Hz) 7/11
A B PARAMETER MEASUREMENT INFORMATION Figure 1 : Voltage Follower Figure 2 : Gainof Inverting Amplifier k Ω e I 1k Ω e o R L C L = pf TYPICAL APPLICATIONS AUDIO DISTRIBUTION AMPLIFIER f = khz O 1M Ω Output A Input 1µF Output B k Ω 1OO µf k Ω k Ω k Ω V CC + Output C 8/11
A B TYPICAL APPLICATIONS (continued) POSITIVE FEEDBACK BANDPASS FILTER 16k Ω 16k Ω 22 pf 22pF Input 3k Ω 3k Ω 1.5k Ω 22pF TL 74 1.5k Ω 22pF TL 74 TL 74 Output B Output A Ground OUTPUT A OUTPUT B SECOND ORDER BANDPASS FILTER fo = khz; Q = 3; Gain = 16 CASCADED BANDPASS FILTER fo = khz; Q = 69; Gain = 16 9/11
A B PACKAGE MECHANICAL DATA 14 PINS PLASTIC DIP Millimeters Inches Dim. Min. Typ. Max. Min. Typ. Max. a1.51.2 B 1.39 1.65.55.65 b.5.2 b1.25. D 2.787 E 8.5.335 e 2.54. e3 15.24.6 F 7.1.28 i 5.1.21 L 3.3.13 Z 1.27 2.54.5. /11
A B PACKAGE MECHANICAL DATA 14 PINS PLASTIC MICROPACKAGE (SO) L C G c1 D M F a2 A b e3 e s a1 E b1 14 8 1 7 Dim. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 1.75.69 a1.1.2.4.8 a2 1.6.63 b.35.46.14.18 b1.19.25.7. C.5.2 c1 45 (typ.) D (1) 8.55 8.75.336.344 E 5.8 6.2.228.244 e 1.27.5 e3 7.62.3 F (1) 3.8 4..15.157 G 4.6 5.3.181.28 L.5 1.27.2.5 M.68.27 S 8 (max.) Note : (1) D and F do not include mold flash or protrusions Mold flash or protrusions shall not exceed.15mm (.66 inc) ONLY FOR DATA BOOK. Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 21 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia Brazil China Finland France Germany Hong Kong India Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom http://www.st.com 11/11