Comprehensive Approach to Control Contact Resistance Instability and Improve First Pass Yield of Bumped Devices
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1 Comprehensive Approach to Control Contact Resistance Instability and Improve First Pass Yield of Bumped Devices Atsushi Mine Phill Mai JEM 3000 Laurelview Court Fremont, CA Joe Foerstel Sean Chen Altera Corporation 101 Innovation Drive San Jose, CA Jerry J. Broz, Ph.D. International Test Solutions 5690 Riggins Court Reno, Nevada SouthWest Workshop June 5 to 8, 2005
2 Overview Introduction Objectives / Approach Methodology Overview Implementation / Characterization Summary 06/07/2005 SouthWest Test Workshop
3 Evaluation Goals To determine the initial time zero path resistance of the VS crown probe card, and monitor that same path resistance after various amounts of die had been sorted. To compare the performance of current standard VS flat tip technology against the new VS crown tip in terms of wafer yield. 06/07/2005 SouthWest Test Workshop
4 VS-Series Probe (Crown) VS Series Newly developed spring probe design Achieves precise probe position and planarity Picture of the Probe Guide Plate Stopper Crown Tip Shape 06/07/2005 SouthWest Test Workshop
5 Contact Concept Crown Probe Tip Image of the Contact Point The ridge of the crown probe tip translates vertical force into radial force. Probe Mark Stable CRES by lower contact force with minimal probe mark. 06/07/2005 SouthWest Test Workshop
6 VS Crown Tip Probe Mark Images 06/07/2005 SouthWest Test Workshop
7 VS Crown Tip Probe Mark Images 06/07/2005 SouthWest Test Workshop
8 Microscope Images of VS Crown Tip Probe Marks 06/07/2005 SouthWest Test Workshop
9 Probe Mark Size Comparison Crown Tip Marks vs. Flat Tip Bump Deformation 06/07/2005 SouthWest Test Workshop
10 Side View Comparison Of Probe Marks 130 um dia. VSC 2 Probe Head 100 um Actual probe mark location 111 um high measured Bump 50 um 140 um dia. Speced. 50 um 100 um Die Surface 140 um Flat Tip Crown Tip 06/07/2005 SouthWest Test Workshop
11 VS Crown Probe After Sorting 12 Wafers VS Crown Probe VS Crown Probe VS Crown Probe VS Crown Probe VS Crown Probe Non-destructive on-line cleaning is needed to keep the contact surfaces debris free. 06/07/2005 SouthWest Test Workshop
12 Path Resistance Measurement Shorted Probe Card PCB used to zero out the resistance measurements of Test Head and Test Head Cables. VS crown tip probe card used to probe a shorted wafer, using 150 um OD. Resistance measurements taken at 3 minute intervals, while resting on a die, no Z-up or Z-down in between. Zero out resistance measurements subtracted out to acquire actual path resistance. 06/07/2005 SouthWest Test Workshop
13 Yield Comparison Use VS flat tip and VS crown tip to probe the same wafers. Perform selective resort (resorting bad dice only) with both technologies to achieve maximum yield for comparison. Inspect VS crown tip probe marks. Inspect VS crown tip probes to compare bump residue build-up. Measure Planarity and Contact Resistance using PRVX. 06/07/2005 SouthWest Test Workshop
14 Testing Parameters Same tester and prober used throughout the experiments. VS Flat Tip parameters Probing: 175um OD Cleaning: 50um OD, 12 times every 50 dice Cleaning medium 3M 1um lapping film VS Crown Tip parameters Probing: 150um OD Cleaning: 100um OD, once every wafer Cleaning medium Probe Polish 99, filled cleaning polymer Due to tip shape requirements a lapping film cannot be used 06/07/2005 SouthWest Test Workshop
15 Physical Path Measured for Resistance Test Head Connectors 6.3 mil Copper Wire Signal Ground Probe Head Probe Pin Epoxy Shorted Wafer PCB Cross-sectional View Path Resistance measured outlined by Blue Arrows. 06/07/2005 SouthWest Test Workshop
16 Path Resistance, 1st Die Probed VS Crown Tip Second Resistance Reading Single TD, Four Readings over 3 min. intervals, 1st Die Probed 3.50 AVG Resistance: ohm Resistance (ohm) Tester Channel T0 T1 T2 T3 06/07/2005 SouthWest Test Workshop
17 Path Resistance, 2nd Die Probed VS Crown Tip Second Resistance Reading Double TD, Four Readings at 3 min. Intervals, 2nd Die Probed AVG Resistance: ohm Resistance (ohm) Tester Channel T0 T1 T2 T3 06/07/2005 SouthWest Test Workshop
18 Path Resistance, 2754th Die Probed Resistance Reading After Probing 2754 Die Single TD, Four readings over 3 min. Intervals 3.50 AVG Resistance: ohm Resistance (ohm) Tester Channel T0 T1 T2 T3 06/07/2005 SouthWest Test Workshop
19 Average Path Resistance 25 Die Tested in a row, with no Cleaning VS Crown Tip Average Path Resistance 25 Die in a row, no cleaning open found on 1 pin on die 18 (removed from data) Resistance (ohm) D1 D2 D3 D4 D5 D6 D7 D8 D9 D10 D11 D12 D13 D14 D15 D16 D17 D18 D19 D20 D21 D22 D23 D24 D25 Die # on Shorted Wafer AVG MAX 06/07/2005 SouthWest Test Workshop
20 Mechanical Performance Characterization Bench-top Materials Testing System Assess cleaning material performance. Evaluate applied load characteristics of probe. High Resolution Camera Precision Z-stage High Magnification Oblique Lens 06/07/2005 SouthWest Test Workshop
21 Mechanical Performance Characterization High resolution and video imaging Synchronized load vs. overtravel data acquisition High Magnification Oblique Lens VS Crown Tip 5 Probes on Probe Polish 150-um Z-overtravel Probes 50-gram Load Cell with Cleaning Material Installed onto Platen High Magnification and High Resolution Imaging 06/07/2005 SouthWest Test Workshop
22 Probe Contact with Bump Play Video 1 x VS Crown Tip Probe at 150um OT on Solder Bump Material VS Crown Tip Probes on Bump 150-um Z-overtravel Compression Load (grams) VS Crown Tip Probes on Bump 150-um Z-overtravel 06/07/2005 SouthWest Test Workshop
23 Probe Clean to Visualize Penetration Play Video 1 x VS Crown Tip Probe at 150um OT on Probe Clean Material VS Crown Tip Probe Cleaning 150-um Z-overtravel Spring Engages Compression Load (grams) Crown tip penetrates into polymer layer VS Crown Tip Probes on Probe Clean 150-um Z-overtravel 06/07/2005 SouthWest Test Workshop
24 5 Probes on Probe Polish 99 Play Video 5 x VS Crown Tip Probe at 150um OT on Probe Polish Material VS Crown Tip Probes on Probe Polish um Z-overtravel Spring Engages Compression Load (grams) Crown tip penetrates into polymer layer VS Crown Tip Probes on Probe Polish um Z-overtravel 06/07/2005 SouthWest Test Workshop
25 VS Crown Tip Probes After Online Cleaning VS Crown Probe VS Crown Probe Cleaned Once per Wafer Cleaned Once per Wafer 06/07/2005 SouthWest Test Workshop
26 Yield Comparison VS Crown Tip vs. VS Flat Tip VSCC2 Split VS Crown Tip VSC Split Final Yield Equal Good Die Dice per Per Wafer Equal VS Flat Tip 10% 9% 8% 7% yield (dpw) 6% 5% 4% recovery (%) 3% 2% 1% wafer # 0% WS1 RS1 RS% 06/07/2005 SouthWest Test Workshop
27 Planarity Reading from PRVX VS Crown Point Probe Card Planarity, I/O Only, 2754 Die Sorted Mils Virtual Pad # 06/07/2005 SouthWest Test Workshop
28 Contact Resistance Reading from PRVX VS Crown Point Probe Card Contact Resistance, I/O Only, 2754 Die Sorted Ohms Virtual Pad # 06/07/2005 SouthWest Test Workshop
29 Summary VS crown tip probe path resistance is on the same order as standard VS flat. VS crown tip Path Resistance holds stable after die sorted and non-destructive cleaning only after each wafer. VS crown tip is able to achieve maximum yield at first sort, with lower resort recovery. Probe marks generated by VS crown tip show minimal disturbance to the bump structure, compared to VS flat tip and other vertical probing technologies. On-line cleaning with Probe Polish 99 was effective in keeping the crown tip clean without affecting the tip geometry in order to maintain consistent yield. Planarity remained at +/-1mil after probing 12 wafers. 06/07/2005 SouthWest Test Workshop
30 Acknowledgements Patrick Mui Engineering Manager, JEM-America Altera Manufacturing Engineering JEM-Japan Test Engineering ITS Applications Engineering 06/07/2005 SouthWest Test Workshop
31 SWTW 2005 Thank you for your attention Questions??? 06/07/2005 SouthWest Test Workshop
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