Digital Memory and Storage
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1 Walter E. Proebster (Ed.) Digital Memory and Storage With 257 Fig. Vieweg
2 CIP-Kurztitelaufnahme der Deutschen Bibliothek Digital memory and storage / Walter E. Proebster (ed.) Aufl. - Braunschweig: Vieweg, NE: Proebster, Walter E. [Hrsg.) ISBN-13: e-isbn-13: DOl: / All rights reserved Friedr. Vieweg & Sohn Verlagsgesellschaft mbh, Braunschweig 1978 Softcover reprint of the hardcover 1 st edition 1978 No part of this publication may be reproduced, stored in a retrieval system or transmitted, mechanical, photocopying, recording or otherwise, without prior permission of the copyright holder. Set by Vieweg, Braunschweig Bookbinder: W. Langeliiddecke, Braunschweig Artistic design: D. Rein, Aachen
3 Foreword Digital memory and storage technologies occupy a dominant position in electronic data processing: They are intimately interwoven with almost all aspects of a data processing system, be it the control processing unit, the peripheral devices or the program and data storage. In this context, memory and storage is one of the most essential design parameters that determine performance and cost efficiency of the entire system to a very high degree. Beyond the field of electronic data processing, digital memory and storage fmd everwidening application in the areas of control and measurement techniques, in digital communication and switching, and lately, even in the area of the consumer electronic market. This explains, why since the beginning of the computer age, digital memory and storage are finding ever increasing attention in research and development. Of the many different memory and storage technologies investigated for application, only very few survived in the tough economic cost/performance struggle. This process still continues: Semiconductor memories have almost completely replaced the ferrite core memories. For the "gap" in cost and performance between memory and storage - which is of growing importance for systems throughput, particularly for query and database systems - very promising proposals, such as charge coupled devices and magnetic bubble memories appear. For very high data volumes, devices with automatic storage media transport have been conceived and developed. For extremely fast memories, research on low temperature Josephson devices has made Significant advances. Two key reasons were the stimuli for calling a 3 day conference on digital memory and storage at Stuttgart in March 1977: The importance for the systems designer, on one hand, to understand the key technologies of memory and storage as the basis for trade-off decisions in the design of system and system components, and on the other hand, the difficulty to obtain such knowledge at technical conferences, which mostly concentrate on a specific and limited field and on latest development results tailored to the specialist in a relatively narrow field. To achieve these principal goals, the topics to be covered spanned the wide range from physical principles of the various memory and storage technologies, the cell design and operation principles to memory and storage systems architecture. In order to cover the desired wide span of technologies and to provide the required overview, the meeting was organized jointly by the following three sections of the Nachrichtentechnische Gesellschaft (NTG), Germany: III
4 Section 6 ''Technical Informatics", Section 2 "Passive Elements and Materials", Section 3 "Semiconductors and Integrated Circuits", as well as the Arbeitsgemeinschaft Magnetismus. It should be noted that also the German Section of IEEE co-sponsored this meeting. Soon after the conference, it became apparent that the proceedings of this conference would be of interest to a wider circle of professionals. In the pursuit of this goal, general agreement was reached with the authors to prepare an English version of the conference proceedings. I would like to acknowledge the permission of the VDE Verlag for publication of the English version. Thanks is also due to my colleques of the program committee: G. Arlt, H. Billing, Th. Einsele, E. Feldtkeller, W. Hilberg, H.-O. Leilich, H. J. Schmitt, and D. Seitzer, who made Significant contributions to the conception and success of this conference. Last but not least, I thank most ~incerely my collegues, in particular W. Dietrich, H. Louis, and V. Sadagopan, for the advice and effort in the preparation and edition of this English version. Walter E. Proebster B6blingen, December 1977 IV
5 Table of Contents Keynote Address H. Billing On the Development of Digital Memories Electromagnetic Storage E. Koster Magnetic Data Recording 11 P. Wentzel Electromechanical Mass Storage Units - Disk Files 33 K. Winkler Electromagnetic Mass Storages - Normal Tape Devices 53 E. Lennemann Tape Libraries with Automatic Reel Transport 65 Semiconductor Memories A. Moeller Fabrication Technology and Physical Fundamentals of Components Used for Semiconductor Memories 77 R. Mitterer LSI Semiconductor Memories 97 U. G. Baitinger and R. Remshardt A High Performance Low Power 2048-Bit Memory Chip in MOSFET Technology and Its Application 105 K. Horninger Readout Methods and Readout Circuits for Dynamik Charge-Storage Elements 121 v
6 W. K. Liebmann Monolithic Memories H. J. Harloff Structure, Organization and Applications of CCD Memories C. Schiinemann BEAMOS - Technology and Applications Read-Only Memories J. Scharbert Read-Only Memories with Magnetic Components or with Integrated Semiconductor Circuits R. G. Muller Electrically Alterable MOS-ROMs, with Particular Emphasis on the Floating Gate Type Magnetic Bubble Memories F. H. de Leeuw Physical Principles of Magnetic Bubble Domain Memory Devices W. Metzdorf Application of the Josephson Effect for Digital Storage H. Deichelmann Ferromagnetic Domain Memories Low Temperature Memories P. Uolf Application of the Josephson Effect for Digital 247 Optical Memories E. Krdtzig Materials for Optical Data Stores 261 VI
7 B. Hill Optical Memory Systems 273 Reliability W. Hilberg Effects of Defects on Yield, Integration, Cost and Reliability of Large Scale Integrated Semiconductor Memories. - A Tutorial Review 291 D. Fischer Reliability of Semiconductor Memories from a Practical Point of View 321 H.-f. Penzel Application of Partially Defective Semiconductor Memory Devices in Memory Systems 339 Memory / Storage Systems H.-O. Leilich Access Methods and Associative Memories W. Motsch Increased Chip Capacity and Extended Logical Complexity of LSI-Associative Memories C. Schiinemann and W. G. Spruth Storage Hierarchy Technology and Organization A. Lehmann and D. Schmid The Performance of Small Cache Memories in Minicomputer Systems with Several Processors Summary of Abstracts The Autors, the Editor VII
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