Application of SEERS to real time Plasma Monitoring in Production at different FABs

Transcription

1 AECAPC SYMPOSIUM 2001, BANFF Application of SEERS to real time Plasma Monitoring in Production at different FABs Volker Tegeder

2 Sensor Evaluation Calculation of expected Economical Benefit Automatic link to logistical Data Partnership Sensor Supplier, Tool Supplier, Manufacturer Analyze Data and react on conspicuous Data Merge Sensor Data to FDC System Requirements for successful integration of sensors into manufacturing Lessons Learned

3 European SEA IST-Project: APC300 PlasmaProcess Control Poly Oxide Metal HERCULES/APC (Plasma-Parameter) APC APC NET NET (Tool-Parameter) Dresden Dresden Data Data base base Test-Data Wafer-Yield Correlation between yield and plasma CoO, OEE Rousset Regensburg Start: February 1st, 1st, 2000 End: October 31st, 2001 Berlin Participants and Timeline

4 Calculation of expected Economical Benefit

5 Calculation of expected Economical Benefit Project Planning HW System Set Up Resources allocated to project => Calculation of Benefit first! Involvement Involvement of: of: Process Process Integration, Integration, Maintenance, Maintenance, IT, IT, Product Product Characterization, Characterization, Controlling, Controlling, Process ProcessDep. Impact of Benefit Estimation

6 Calculation of expected Economical Benefit Identify Improvement for Manufacturing List Preconditions and Requirements Correlate Improvement to to Economical Benefit Generate Benefit Equations for Verification Collect Data for Calculation (pre/post) System Set Up to to Receive the Benefit Calculation Steps

7 Automatic Link to logistical Data

8 Automatic Link to logistical Data Analysis correlate sensor data to to in in line data yield data tool data benefit calculation Logistical Data linked to Sensor Data Adjustment of of settings for sensor alarm (FDC)

9 Partnership: Sensor Supplier, Tool Supplier, Manufacturer

10 Partnership: Sensor Supplier, Tool Supplier and Manufacturer New Platen improves Signal to Noise Ratio Sensor Signal weak because of Liner Regensburg

11 Partnership: Sensor Supplier, Tool Supplier and Manufacturer Sensor Data available at the Tool Synchronized to Tool Data On-line at the Tool Easy to analyse Collision Rate TCPRFGen ForwardPower BiasRFGen ForwardPower LAM Plug and Play Interface Fab-Host LAM Domino Chamber User Internal Network FDC Hercules Universal Universal Plug Plug and and Play Play Interface Interface merging merging Tool Tool and and external external Sensor Sensor Data Data Independent, Independent, Ethernet Ethernet based based Network Network (10 (10 Mbit Mbit / / Mbit) Mbit) Automatic Automatic Sensor Sensor Recognition Recognition Providing Providing Sensor Sensor with with logistical logistical Data Data

12 Analyze & React

13 Analyze & React Electron density [10 6 x 1/cm 3 ] free master/slave Time [s] - Strong Fluctuations detected for new Tool - Root Cause: missing Phase Coupling Regensburg

14 Analyze & React Collision Rate CD Gate Etch DOE Results: Pressure, RF Top/Bottom and O2/Cl2 Variation Rousset

15 Analyze & React Collision Rate [10 8 s -1 ] optical Endpoint watt 300 watt TCPRFGenForwardPower_AI BiasRFGenForwardPower_AI Gas flow changes Gas flow changes sec Electron Density [10 10 s -1 ] Sensor and Tool Data at LAM Domino

16 Analyze & React 14 Hercules Endpoint (AMAT 368,5 nm) Collision Rate [10 6 x s -1 ] Intensity EP Time [s] 0 Oxide Process (one Recipe step), Overetch identified by collision rate. SEERS Fingerprint and optical EP

17 Analyze & React SiO2 etch recipe parameter change by 20 % Reference_1 +HBr2 -HBr2 +CL2 -CL2 +HBr1 -HBr1 +Pressure -Pressure +RFPower -RFPower +Mfield -Mfield +He-BSC -He-BSC +CF4 -CF4 +He-O2 -He-O2 +T_Wall -T_Wall +T_Cathode -T_Cathode +T_Wall -T_Wall -He-BSC -He-O2 Reference_2 Collision Rate [10 8 s -1 ] Etch Rate Change % Uniformity Change % Mean Coll. Rate Mean / depth std DEV / depth Etch Uniformity Change indicated by collision rate Similar Results for Si Etch at MxP but lower Sensitivity For Poly Etch at DPS not sensitive enough to detect Errors Dresden

18 Merge Sensor Data to FDC System

19 Merge Sensor Data to FDC System 5 4,5 Oxide Process Collision Rate [10 7 s -1 ] 4 3,5 3 2,5 2 1,5 1 Electrical Parameter ~ Yield 0, Time [s] Zero Yield Wafer detected

20 Merge Sensor Data to FDC System Strong Disturbances at one Poly Process Regensburg Process for new Product with bigger open Area was unstable Improvement of the Process by changing the Recipe (Pressure) since 7/19 verified by Collision Rate Stabilization of Process verified

21 Merge Sensor Data to FDC System Sensor data Change in Chamber Pressure impacts the Collision Rate Collision Rate [10 6 s -1 ] Process 1 Process Etch Time [s] 240 Throttle Valve Position Pressure 1 Pressure 2 Tool data Pressure [mtorr] Process Time [s] 0 Tool Error identified by Collision Rate

22 Merge Sensor Data to FDC System Slot 7 Slot Aver. Coll. Rate [10 6 s -1 ] Collision Rate of indicated wafers Slot 6 Slot Wafermap: Excursion Pattern Slot Run Root Cause: Mass Flow Controller Malfunction Test Pattern identified at Process Level

23 Co-Authors Daniel Zschäbitz Mark Laqua Enrico Höfer Klaus Reingruber Klaus Behrendt Sven Mueller Robert Ronchi Baudouin Lecohier Julien Pasquet University of Dresden University of Dresden University of Applied Sciences Dresden Regensburg Regensburg AMD Saxony ST Microelectronics ST Microelectronics ST Microelectronics Further Reading: Characterization and Control..., Volker Tegeder et. al. European AECAPC Workshop 2000 Supervision of Plasma Etch Processes..., Volker Tegeder et. al. AECAPC Symposium XII 2000 The tremendous impact of APC for plasma etch, Volker Tegeder, Robert Ronchi, Sven Mueller, Solid State Technology 2001 in press Acknowledgement: The presented work is funded by the European IST program on the SEA-Initiative