The Blue Laser Diode

Transcription

1 The Blue Laser Diode The Complete Story Bearbeitet von Shuji Nakamura, Stephen Pearton, Gerhard Fasol Neuausgabe Buch. xvi, 368 S. Hardcover ISBN Format (B x L): 15,5 x 23,5 cm Gewicht: 813 g Weitere Fachgebiete > Technik > Sonstige Technologien, Angewandte Technik > Angewandte Optik schnell und portofrei erhältlich bei Die Online-Fachbuchhandlung beck-shop.de ist spezialisiert auf Fachbücher, insbesondere Recht, Steuern und Wirtschaft. Im Sortiment finden Sie alle Medien (Bücher, Zeitschriften, CDs, ebooks, etc.) aller Verlage. Ergänzt wird das Programm durch Services wie Neuerscheinungsdienst oder Zusammenstellungen von Büchern zu Sonderpreisen. Der Shop führt mehr als 8 Millionen Produkte.

2 Contents 1. Introduction LEDsandLDs Group-III Nitride Compound Semiconductors Background Introduction Applications and Markets for Gallium Nitride Light Emitting Diodes(LEDs)andLasers WhoWeretheEarlyKeyPlayersintheField? WhyInGaN/AlGaN? KeyStepsintheDiscovery MaterialsIssues Research History ofshuji Nakamura and Selected Steps in the Development ofthecommercialblueganled Why Did Nichia Succeed Where Many Much Larger MultinationalsandResearchGroupsFailed? AdditionalCommentsonBlueLEDResearch A Short Summary ofthe Physics ofsemiconductor Lasers andleds LEDs Lasers Physics of Gallium Nitride and Related Compounds Introduction CrystalStructures WurtziteversusZincblendeStructure Growth ofwurtzite GaN onto Sapphire GrowthofCubic(Zincblende)GaN Growth ofgan onto Other Substrates ElectronicBandStructure Fundamental Optical Transitions Band Structure Near the Fundamental Gap Band Parameters and Band Offsets for GaN, AlN, andinn... 36

3 XII Contents 3.4 ElasticProperties Phonons Other Properties ofgallium Nitride NegativeElectronAffinity(NEA) Pyroelectricity Transferred-ElectronEffect(GunnEffect) SummaryofProperties GaN Growth Growth Methods for Crystalline GaN A New Two-Flow Metalorganic Chemical Vapor Deposition System for GaN Growth (TF-MOCVD) In Situ Monitoring ofgan Growth Using Interference Effects Introduction ExperimentalDetails GaNGrowthWithoutAlNBufferLayer GaNGrowthwithAlNBufferLayer Summary Analysis ofreal-time Monitoring Using Interference Effects Introduction ExperimentalDetails ResultsandDiscussion Summary GaNGrowthUsingGaNBufferLayer Introduction ExperimentalDetails ResultsandDiscussion In Situ Monitoring and Hall Measurements ofgan Growth withganbufferlayers Introduction ExperimentalDetails ResultsandDiscussion Summary p-type GaN Obtained by Electron Beam Irradiation Highly p-type Mg-Doped GaN Films Grown withganbufferlayers Introduction ExperimentalDetails ResultsandDiscussion High-Power GaN p-n Junction Blue Light Emitting Diodes Introduction ExperimentalDetails ResultsandDiscussion Summary

4 Contents XIII 6. n-type GaN Si- and Ge-Doped GaN Films Grown with GaN Buffer Layers ExperimentalDetails SiDoping GeDoping Mobility as a Function ofthe Carrier Concentration Summary p-type GaN Historyofp-TypeGaNResearch Thermal Annealing Effects on p-type Mg-Doped GaN Films Introduction ExperimentalDetails ResultsandDiscussion Appendix Hole Compensation Mechanism ofp-type GaN Films Introduction ExperimentalDetails Results and Discussion: Explanation ofthe Hole Compensation Mechanism ofp-type GaN Summary: Hydrogen Passivation and Annealing ofp-typegan PropertiesandEffectsofHydrogeninGaN PresentStateofKnowledge Passivation HydrogeninAs-GrownGaN Diffusion ofh in Implanted or Plasma-Treated GaN Summary InGaN IntroductoryRemarks:TheRoleofLatticeMismatch High-Quality InGaN Films Grown on GaN Films Introduction:InGaNonGaN ExperimentalDetails:InGaNonGaN ResultsandDiscussion:InGaNonGaN Summary:InGaNonGaN Si-Doped InGaN Films Grown on GaN Films Introduction:Si-DopedInGaNonGaN ExperimentalDetails:Si-DopedInGaNonGaN ResultsandDiscussion:Si-DopedInGaNonGaN Summary:Si-DopedInGaNonGaN Cd-Doped InGaN Films Grown on GaN Films Introduction:Cd-dopedInGaNonGaN ExperimentalDetails ResultsandDiscussion Summary:Cd-DopedInGaN

5 XIV Contents 8.5 In x Ga 1 x N/In y Ga 1 y N Superlattices Grown on GaN Films Introduction: In x Ga 1 x N/In y Ga 1 y N Superlattices Experiments: In x Ga 1 x N/In y Ga 1 y N Superlattices Results and Discussion: In x Ga 1 x N/In y Ga 1 y NSuperlattices Summary: In x Ga 1 x N/In y Ga 1 y NSuperlattices Growth ofin x Ga 1 x N Compound Semiconductors and High-Power InGaN/AlGaN Double Heterostructure VioletLightEmittingDiodes Introduction ExperimentalDetails Growth and Properties ofin x Ga 1 x N Compound Semiconductors High Power InGaN/AlGaN Double Heterostructure VioletLightEmittingDiodes Summary p-gan/n-ingan/n-gan Double-Heterostructure Blue Light EmittingDiodes ExperimentalDetails ResultsandDiscussion Summary High-Power InGaN/GaN Double-Heterostructure Violet Light EmittingDiodes Zn and Si Co-Doped InGaN/AlGaN Double-Heterostructure Blue and Blue-Green LEDs Zn-Doped InGaN Growth and InGaN/AlGaN Double-HeterostructureBlueLightEmittingDiodes Introduction ExperimentalDetails Zn-DopedInGaN InGaN/AlGaNDHBlueLEDs Candela-Class High-Brightness InGaN/AlGaN Double-HeterostructureBlueLightEmittingDiodes High-Brightness InGaN/AlGaN Double-Heterostructure Blue-GreenLightEmittingDiodes ABrightFutureforBlue-GreenLEDs Introduction GaNGrowth InGaN InGaN/AlGaNDHLED Summary

6 Contents XV 10. InGaN Single-Quantum-Well LEDs High-Brightness InGaN Blue, Green, and Yellow LEDs withquantum-wellstructures Introduction ExperimentalDetails ResultsandDiscussion Summary High-Power InGaN Single-Quantum-Well Blue andvioletlightemittingdiodes Super-Bright Green InGaN Single-Quantum-Well Light EmittingDiodes Introduction ExperimentalDetails ResultsandDiscussion Summary WhiteLEDs Room-Temperature Pulsed Operation of Laser Diodes InGaN-BasedMulti-Quantum-WellLaserDiodes Introduction ExperimentalDeatils ResultsandDiscussion Summary InGaN Multi-Quantum-Well Laser Diodes withcleavedmirrorcavityfacets Introduction ExperimentalDetails ResultsandDiscussion Summary InGaN Multi-Quantum-Well Laser Diodes Grown on MgAl 2 O 4 Substrates Characteristics ofingan Multi-Quantum-Well LaserDiodes TheFirstIII-V-Nitride-BasedVioletLaserDiodes Introduction ExperimentalDetails ResultsandDiscussion Summary Optical Gain and Carrier Lifetime ofinganmulti-quantum-welllaserdiodes Ridge-Geometry InGaN Multi-Quantum-Well Laser Diodes Longitudinal Mode Spectra and Ultrashort Pulse Generation ofinganmulti-quantum-welllaserdiodes

7 XVI Contents 12. Emission Mechanisms of LEDs and LDs InGaNSingle-Quantum-Well(SQW)-StructureLEDs EmissionMechanismofSQWLEDs InGaNMulti-Quantum-Well(MQW)-StructureLDs Summary Room Temperature CW Operation of InGaN MQW LDs First Continuous-Wave Operation ofingan Multi-Quantum-Well-StructureLaserDiodesat233K First Room-Temperature Continuous-Wave Operation ofinganmulti-quantum-well-structurelaserdiodes RT CW Operation ofingan MQW LDs withalonglifetime Blue/Green Semiconductor Laser Blue/GreenLEDs Bluish-PurpleLDs Summary RTCWInGaNMQWLDswithimprovedLifetime Latest Results: Lasers with Self-Organized InGaN Quantum Dots Introduction Fabrication EmissionSpectra Self-OrganizedInGaNQuantumDots AdvancesinLEDs AdvancesinLaserDiodes Conclusions Summary Outlook Appendix Biographies ShujiNakamura GerhardFasol StephenPearton References Index