PV-Module Application Overview

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1 PV-Module Table of Contents Concentrators, Bypass Diode... 3 Crystalline, Junction Box... 4 Crystalline, Module Integration... 5 Thin Film, Junction Box...6 Thin Film, Module Integration... 7 page 1

2 PV-Module Application Overview Photovoltaic (PV) modules are composed of many individual solar cells that are arranged in such a way as to achieve desired voltage and current output. The system needs to be protected against reverse current flow in order to avoid dissipating the harvested energy as heat. To simplify the wiring of the cells, bypass diodes must be placed in proximity to the panel in the junction box that is typically made of plastic and mounted on the rear side of the panel, and thus exposed to rather high temperatures with limited heat dissipation capabilities. Schottky diodes are well suited and widely adopted for this application because of low conduction losses. The preferred package is axial, but new designs are going to parts. Crystalline PV Modules use the junction box to connect the PV solar cells as strings to the inverter system. The bypass diodes are integrated into the junction box parallel to the strings in order to optimize the generated power of the PV module, even when part of the module is not working due to shadow effects, and to protect the non-working cells against overheating and hot spots. Newer trends involve separating the junction box and the bypass diodes and integrating the diodes into the PV module. Thin Film PV Modules require so-called ""blocking diodes"" between the PV module connectors that should withstand the maximum ""system voltage"" of the PV equipment, which can reach 1000 V. For improved efficiency, some designs use Schottky bypass diodes not only for the strings as in the crystalline concept, but also use several bypass diodes integrated into the module for a group of PV solar cells. Concentrator PV Modules are built with high concentrating lenses that project solar light onto a small solar cell that is mounted on a ceramic substrate. The application requires high-current Schottky bypass diodes and sometimes require ""bare dies"" for direct mounting on the ceramic substrate. page 2

3 PV-Module : Concentrators, Bypass Diode Bypass Diode MURS360 NEW Ultrafast Rectifier Glass pass chip juntcion DO-214AB SMC SS15P3S NEW Photovoltaic Solar Cell Protection low profile = 1.1mm SSA33L NEW -Schottky Rectifier Low profile DO-214AC SMA VBT6045CBP NEW Solar Cell Protection - TMBS Ultra Low VF = 0.33 V at IF = 10 A Tj=200 C; IF = 2*30 A; D2PAK page 3

4 PV-Module : Crystalline, Junction Box Bypass Diode MBRB15H45CT NEW Cell Protection - Schottky High Barrier Technology for Improved High Temperature Performance MBRB30H45CT NEW Cell Protection - Schottky High Barrier Technology for Improved High Temperature Performance SS10PH45 NEW Cell Protection - Schottky Low VF = 0.45 V at IF = 5.0 A Vf at If=10A --> 0.56V SS15P3S NEW Cell Protection - Schottky Low VF = 0.32 V at IF = 7.5 A V10P45S NEW Cell Protection - Trench-Schottky Ultra Low VF = 0.34 V at IF = 5.0 A Vf at If=10A --> 0.41V V15P45S NEW Cell Protection - Trench-Schottky Ultra Low VF = 0.31 V at IF = 5.0 A VBT2045BP NEW Cell Protection - Trench-Schottky Vf at If=20A --> 0.51V VBT2045CBP NEW Cell Protection - Trench-Schottky Vf at If=10A --> 0.41V Tj = 175 C; VR = 45 V; Tj=175 CIF = 2 * 7.5 A; Tj = 175 C; VR = 45 V; Tj=175 CIF = 2 * 15 A; VF = 0.56 V; Tj = 175 C; VR = 45 V; Tj=175 C; IF = 10 A; VF = 0.56 V; Tj=200 C; IF = 10 A; VF = 0.41 V; Tj=200 C; IF = 20 A; Tj=200 C; IF = 2*10 A; VF = 0.41 V; VBT3045CBP NEW Cell Protection - Trench-Schottky Tj=200 C; IF = 2*15 A; VF = 0.39 V; VBT4045BP NEW Cell Protection - Trench-Schottky Ultra Low VF = 0.28 V at IF = 5.0 A Vf at If=40A --> 0.51V VBT6045CBP NEW Cell Protection - Trench-Schottky Ultra Low VF = 0.33 V at IF = 10 A VSB1545 NEW Cell Protection - Trench-Schottky Vf at If=15A --> 0.44V VSB2045 NEW Cell Protection - Trench-Schottky Ultra Low VF = 0.30 V at IF = 5.0 A Vf at If=20A --> 0.42V VT2045BP NEW Cell Protection - Trench-Schottky Vf at If=20A --> 0.51V VT2045CBP NEW Cell Protection - Trench-Schottky Vf at If=10A --> 0.41V VT3045BP NEW Cell Protection - Trench-Schottky Ultra Low VF = 0.30 V at IF = 5.0 A Vf at If=30A --> 0.45V VT3045CBP NEW Cell Protection - Trench-Schottky Ultra Low VF = 0.30 V at IF = 5.0 A Vf at If=15A --> 0.39V VT4045BP NEW Cell Protection - Trench-Schottky Ultra Low VF = 0.28 V at IF = 5.0 A Vf at If=40A --> 0.51V VT6045CBP NEW Cell Protection - Trench-Schottky Ultra Low VF = 0.33 V at IF = 10 A Tj=200 C; IF = 40 A; Tj=200 C; IF = 2*30 A; VF = 0.33 V; Tj=200 C; IF = 20 A; VF = 0.30 V; Tj=200 C; IF = 20 A; Tj=200 C; IF = 2*10 A; VF = 0.41 V; Tj=200 C; IF = 30 A; Tj=200 C; IF = 2*15 A; VF = 0.30 V; Tj=200 C; IF = 40 A; Tj=200 C; IF = 2*30 A; TH / Axial P600 leaded Leaded Axial P600 TO-220AB TO-220AC TO-220AC TO-220AB TO-220AC TO-220AB page 4

5 PV-Module : Crystalline, Module Integration Bypass Diode SS15P3S Cell Protection - Schottky Low VF = 0.32 V at IF = 7.5 SS15P3S NEW Cell Protection - Schottky Low VF = 0.32 V at IF = 7.5 A V15P45S NEW Cell Protection - Trench-Schottky Ultra Low VF = 0.31 V at IF = 5.0 A page 5

6 PV-Module : Thin Film, Junction Box Blocking Diode 1N5408 Plastic Rectifier Low laekage current Tj=150 C; IF = 3.0 A; GP30M P600M Glass Passivated Junction Plastic Rectifier General Purpose Plastic Rectifier Low leakage current High forward current capability Cavity-free glass passivated junctio Tjmax=150 C Vrrm=1000V DO-201AD DO-201AD TH / Axial P600 page 6

7 PV-Module : Thin Film, Module Integration Bypass Diode SS5P3 Cell Protection - Schottky Rectifier Low forward voltage drop Vf@5A=0.403V esmp SS8P3L NEW -Schottky Rectifier Low profile =1.1mm AEC-Q page 7

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Solar Cell Bypass Diodes in Silicon Crystalline Photovoltaic Panels

Solar Cell Bypass Diodes in Silicon Crystalline Photovoltaic Panels VISHAY GENERAL SEMICONDUCTOR www.vishay.com Rectifiers IMPORTANT CHARACTERISTICS OF BYPASS DIODES FOR PHOTOVOLTAIC SOLAR CELLS 1. Forward Voltage Drop (V F ) at Bypass The basic function of bypass diodes