Training Program. AIXTRON Training Center
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1 Training Program Lund, Sweden Cambridge, UK IXTRON Training Center Herzogenrath Germany Headquarters Seoul, South Korea Tokyo, Japan Sunnyvale C, US Shanghai, China Hsinchu & Tainan, Taiwan Suzhou, China IXTRON Representation Training Center IXTRON SE Training Center (Germany) Kaiserstr Herzogenrath Germany IXTRON SINNO Demo Lab and Training Center (China) Dushu Lake Higher Education Town, Ruoshui Road 398, Suzhou Industrial Park, Suzhou, , P.R. China
2 Content IXTRON Demo Lab and Training Center IXTRON Demo Lab and Training Center...3 Training overview...4 Level MOCVD-Systems: Basics...5 Level B MOCVD-Systems: dvanced stage...6 Level C Principles of MOCVD technology...7 Level D In-situ monitoring and ex-situ characterization of epitaxial layer...8 Level E Process tuning...9 Level F Device understanding and correlation to epitaxial growth Level G Fab-automation, MES-interface...11 In Germany and their new facilities in Suzhou, IXTRON will provide customers and interested clients various training options and system demonstrations. Training From basic reactor handling to advanced process tuning for device optimization For operators to advanced process engineers Demonstration of IXTRON system performance G5 HT-TM (confi gurations: 56x2, 14x4, 8x6 ) CRIUS II-XL (confi gurations: 69x2, 19x4 ) Process development Customer related process development Location Herzogenrath, Germany Suzhou, China, cooperation with SINNO (Suzhou Institute of Nano-Tech and Nano-Bionics) 3
3 Training overview MOCVD-Systems: Basics Hardware & Software training, Safety Level B C D E F G Operator Technician Course MOCVD-Systems: Basics Hardware & Software training, Safety MOCVD-Systems: dvanced stage Maintenance, Calibration, Troubleshooting Principles of MOCVD technology Physics and Chemistry In-situ monitoring and ex-situ characterization of epitaxial layer Process tuning: Planetary system Close Coupled Showerhead Device understanding and correlation to epitaxial growth Fab-automation MES-interface Process Engineer Fab-manager B Days other schedules on request B C D E F G How to operate the IXTRON MOCVD systems Hardware handling Software training (IXCT ) Overview and structure Writing and analyzing recipes Safety and handling rules Transfer module Cluster Tool Control (CTC) State machine >>> Certifi cate of successful training handouts of discussed topics 4 5
4 B MOCVD-Systems: dvanced stage Maintenance, Calibration, Troubleshooting C Principles of MOCVD technology Physics and Chemistry Maintenance, preventive maintenance Extended safety rules during maintenance cycles MFC exchange Leak test procedures Introduction in MOCVD technology MOCVD chemistry and basics of MOCVD technology MOCVD reactor design and modeling Cleaning of reactor parts Temperature control and heater test Introduction in epitaxial growth principles Epitaxial growth technologies Troubleshooting hard- and software State of the art results and future challenges Growth rate Kinetic Mass Transport Desorption Temperature 6 7
5 D In-situ monitoring and ex-situ characterization of epitaxial layer E Process tuning Planetary Reactor Close Coupled Showerhead In-situ characterization/monitoring: Temperature Wafer bowing Growth rate and layer properties Explanation of existing tools Ex-situ characterization of epitaxial layer: Photoluminescence (PL): EtaMax Plato PL mapper X-ray: Panalytical X PERT PRO MRD XL Electrical properties: Nanometrics Hall Effect Measurement System HL5500/5580 Surface and defects: NIKON ECLIPSE LV150 Microscope Temperature tuning (CCS) Layer uniformity tuning (planetary) Run-to-run and system-to-system uniformity Yield improvement 8 Introduction of simulation Use simulation results and theory to explain and understand process tuning Theory on reactor behavior: planetary and showerhead 9
6 F Device understanding and correlation to epitaxial growth G Fab-automation MES-interface* LED Device Physics: Technology and Characterization Laser Gas-HEMT basics Tool utomation utomated wafer handling Defect reduction and yield improvement Throughput Overall productivity profi tability Nitride-HEMT HFET-principles and upcoming challenges Factory utomation MES - interface MES integrated effi cient fab planning and operation Productivity profi tability *MES = Manufacturing Execution System 10 11
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