IFI5481: RF Circuits, Theory and Design



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IFI5481: RF Circuits, Theory and Design Lecturer: Prof. Tor A. Fjeldly, UiO og NTNU/UNIK [torfj@unik.no] Assistant: Malihe Zarre Dooghabadi [malihezd@ifi.uio.no] Syllabus: Lectured material and examples, Kap. 1-5 www.unik.no/~torfj/inf-rfd/course_inf-rfd.htm Problems/Projects: - Problemsolving by Malihe each week - Mandatory homework problems after each chapter - Two design projects using the RF simulator ADS Literature: R. Ludwig, G. Bogdanov, RF Circuit Design, Theory and Applications, 2nd Ed., Pearson/Prentice Hall, 2008

Syllabus Ch. 1 Introduction Ch. 2 Transmission Line Analysis Ch. 3 The Smith Chart Ch. 4 Single- and Multiport Networks Ch. 5 An Overview of RF Filter Design

Importance of RF design Wireless communications (explosive growth of cell phones, WLAN, etc., 900 MHz and up) Global positioning systems (GPS, 1.2 1.6 GHz ) Satellite communications (C band broadcast, 4 GHz uplink, 6 GHz downlink) Why separate RF courses? - lumped circuit representation no longer applies!! - have to consider wave nature of signals

How to make a distributed theory?

Relevant questions Where does conventional AC analysis fail? Which characteristica make RF behavior different from low-frequency behavior? What kind of new circuit theory must be used? How is this theory applied in practical design of RF circuits?

Frequency spectrum RadioFrequency (RF) TV, wireless phones, GPS 300 MHz 3 GHz operational frequency 1 m 10 cm wavelength in air MicroWave (MW) RADAR, remote sensing 8 GHz 40 GHz operational frequency 3.75 cm 7.5 mm wavelength in air

Design example: Generic RF tranceiver circuit (cell phone, WLAN,..) Typical frequency range: Cell phone 950 MHz, 1.9 GHz WLAN 2.4 GHz, 5 GHz

Implementation of power amplifier matching networks BJT/FET active devices biasing circuits printed circuit board mircostripline realization surface mount technology

Electromagnetic wave propagation Basics: Intrinsic impedance: Phase velocity: z t H H z t E E y y x x cos cos 0 0 r r r r E x H y Z 377 0 0 0 TEM mode r r p c v 1

IEEE frequency spectrum Frequency Band Frequency Wavelength ELF (Extreme Low Frequency) 30 300 Hz 10,000 1000 km VF (Voice Frequency) 300 3000 Hz 1000 100 km VLF (Very Low Frequency) 3 30 khz 100 10 km LF (Low Frequency) 30 300 khz 10 1 km MF (Medium Frequency) 300 3000 khz 1 0.1 km HF (High Frequency) 3 30 MHz 100 10 m VHF (Very High Frequency) 30 300 MHz 10 1 m UHF (Ultrahigh Frequency) 300 3000 MHz 100 10 cm SHF (Superhigh Frequency) 3 30 GHz 10 1 cm EHF (Extreme High Frequency) 30 300 GHz 1 0.1 cm Decimillimeter 300 3000 GHz 1 0.1 mm P Band 0.23 1 GHz 130 30 cm L Band 1 2 GHz 30 15 cm S Band 2 4 GHz 15 7.5 cm C Band 4 8 GHz 7.5 3.75 cm X Band 8 12.5 GHz 3.75 2.4 cm Ku Band 12.5 18 GHz 2.4 1.67 cm K Band 18 26.5 GHz 1.67 1.13 cm Ka Band 26.5 40 GHz 1.13 0.75 cm Millimeter wave 40 300 GHz 7.5 1 mm Submillimeter wave 300 3000 GHz 1 0.1 mm

RF behavior of passive components Conventional circuit analysis: R taken to be frequency independent Ideal capacitor: XC 1 C Ideal inductor : X L L In reality: R, L, C are made from wires, plates, coils Each possesses resistive, inductive and capacitive behavior

Example: Skin effect in wire resistor R R a L 2 DC R DC R DC a 1 2 1 f High frequency results in skin effect whereby current flow is pushed to the outside by the magnetic field. L 1, f R f

Current distribution in the wire Low frequency gives a uniform current distribution Medium to high frequency pushes current to the outside At RF the current is completely restricted to the surface

High-frequency resistors Surface mounted thin-film chip resistors for RF applications Lumped electrical equivalents Z jl 1 jc 1 R RF impedance response of metal film resistor

High-frequency capacitors Surface mounted thin-film chip capacitor for RF applications Lumped electrical equivalent RF impedance response of chip capacitor. Re Loss tangent: Y p 1 tan p Im Y CR p e Z R s jl 1 jc 1 R e

High-frequency inductors Surface mounted inductors: wire-wound coil or flat coil Z jc s 1 1 R s jl Lumped electrical equivalent RF impedance response of inductor. Quality factor: Q X Rs