Features. Instruction. Decoder Control Logic, And Clock Generators. Address Compare amd Write Enable. Protect Register V PP.



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February 1999 NM9366 (MICROWIRE Bus Interface) 4096-Bit Serial EEPROM General Description The NM9366 devices are 4096 bits of CMOS non-volatile electrically erasable memory divided into 256 16-bit registers. Selected registers can be protected against data modification by programming the Protect Register with the address of the first register to be protected against data modification (all registers greater than, or equal to, the selected address are then protected from further change). Additionally, this address can be locked into the device, making all future attempts to change data impossible. These devices are fabricated using Fairchild Semiconductor floating-gate CMOS process for high reliability, high endurance and low power consumption. The NM9366 is offered in both SO and TSSOP packages for small space considerations. The EEPROM interfacing is MICROWIRE compatible providing simple interfacing to standard microcontrollers and microprocessors. There are a total of 10 instructions, 5 which operate on the EEPROM memory, and 5 which operate on the Protect Register. The memory instructions are READ, WRITE, WRITE ALL, WRITE ENABLE, and WRITE SABLE. The Protect register instructions are PRREAD, PRWRITE, NABLE, PRCLEAR, and PRSABLE. Features Write protection in a user defined section of memory Sequential register read Typical active current of 200µA 10µA standby current typical 1µA standby current typical (L) 0.1µA standby current typical (LZ) No erase required before write Reliable CMOS floating gate technology MICROWIRE compatible serial I/O Self timed write cycle Device status during programming mode 40 year data retention Endurance: 1,000,000 data changes 2.7V to 5.5V operation in all modes of operation Packages available: 8-pin SO, 8-pin P, 8-pin TSSOP NM9366 (MICROWIRE Bus Interface) 4096-Bit Serial EEPROM Functional Diagram Instruction Register Instruction Decoder Control Logic, And Clock Generators V CC 6/8 Address Register Protect Register Address Compare amd Write Enable V PP EN High Voltage Generator And Program Timer Decoder 1 of 16 EEPROM Array 16 Read/Write Amps 16 V SS Data In/Out Register 16 Bits Data Out Buffer DS500086-1 1999 Fairchild Semiconductor Corporation NM9366 Rev. C.1 1 www.fairchildsemi.com

Connection Diagram Pin Names Dual-In-Line Package (N) 8 Pin SO (M8) and 8 Pin TSSOP (MT8) GND V CC 1 2 3 4 8 7 Top View Package Number N08E, M08A and MTC08 Chip Select 6 5 Serial Data Clock Serial Data Input Serial Data Output Ground Program Enable V CC GND Protect Register Enable Power Supply DS500086-2 Ordering Information NM 93 XX LZ E XX Letter Description Package N 8-pin P M8 8-pin SO MT8 8-pin TSSOP Temp. Range None 0 to 70 C V -40 to +125 C E -40 to +85 C Voltage Operating Range Blank 4.5V to 5.5V L 2.7V to 5.5V LZ 2.7V to 5.5V and <1µA Standby Current Density 66 4096 bits C CMOS Data protect and sequential read Interface 93 MICROWIRE - 3 or 4 Wire Interface NM Fairchild Non-Volatile Memory NM9366 (MICROWIRE Bus Interface) 4096-Bit Serial EEPROM 2 www.fairchildsemi.com NM9366 Rev. C.1

Absolute Maximum Ratings (Note 1) Ambient Storage Temperature All Input or Output Voltages with Respect to Ground Lead Temperature (Soldering, 10 sec.) ESD rating -65 C to +150 C +6.5V to -0.3V +300 C 2000V Operating Conditions Ambient Operating Temperature NM9366 NM9366E NM9366V 0 C to +70 C -40 C to +85 C -40 C to +125 C Power Supply (V CC ) 4.5V to 5.5V DC and AC Electrical Characteristics V CC = 4.5V to 5.5V unless otherwise specified Symbol Parameter Part Number Conditions Min Max Units I CCA Operating Current = V IH, =1.0 MHz 1 ma I C Standby Current = V IL 50 µa I IL Input Leakage V IN = 0V to V CC ±-1 µa I OL Output Leakage (Note 2) V IL Input Low Voltage -0.1 0.8 V V IH Input High Voltage 2 V CC +1 V OL1 Output Low Voltage I OL = 2.1 ma 0.4 V V OH1 Output High Voltage I OH = -400 µa 2.4 V OL2 Output Low Voltage I OL = 10 µa 0.2 V V OH2 Output High Voltage I OH = -10 µa V CC - 0.2 f Clock Frequency (Note 3) 1 MHz t H High Time NM9366 0 C to +70 C 250 ns NM9366E/V -40 C to +125 C 300 t L Low Time 250 ns t S Setup Time Must Be at V IL 50 for t S before 50 ns goes high 100 t Minimum (Note 4) 250 ns Low Time t S Setup Time 100 ns t S Setup Time 50 ns t DH Hold Time 70 ns t S Setup Time 50 ns t S Setup Time 100 ns t H Hold Time 0 ns t H Hold Time 250 ns t H Hold Time 50 ns t H Hold Time 20 ns t PD1 Output Delay to 1 500 ns t PD0 Output Delay to 0 500 ns t SV to Status Valid 500 ns t DF to in = V IL 100 ns TRI-STATE t WP Write Cycle Time 10 ms NM9366 (MICROWIRE Bus Interface) 4096-Bit Serial EEPROM 3 www.fairchildsemi.com NM9366 Rev. C.1

Absolute Maximum Ratings (Note 1) Ambient Storage Temperature All Input or Output Voltages with Respect to Ground Lead Temperature (Soldering, 10 sec.) ESD rating -65 C to +150 C +6.5V to -0.3V +300 C 2000V Operating Conditions Ambient Operating Temperature NM9366L/LZ NM9366LE/LZE NM9366LV/LZV 0 C to +70 C -40 C to +85 C -40 C to +125 C Power Supply (V CC ) 2.7V to 4.5V DC and AC Electrical Characteristics V CC = 2.7V to 4.5V unless otherwise specified Symbol Parameter Part Number Conditions Min Max Units I CCA Operating Current = V IH, =250 KHz 1 ma I C Standby Current = V IL L 10 µa LZ 1 µa I IL Input Leakage V IN = 0V to V CC ±1 µa I OL Output Leakage (Note 2) V IL Input Low Voltage -0.1 0.15V CC V V IH Input High Voltage 0.8V CC V CC +1 V OL Output Low Voltage I OL = 10µA 0.1V CC V V OH Output High Voltage I OH = -10µA 0.9V CC f Clock Frequency (Note 3) 0 250 KHz t H High Time 1 µs t L Low Time 1 µs t S Setup Time Must Be at V IL for t S 0.2 µs before goes high t Minimum Low Time (Note 4) 1 µs t S Setup Time 0.2 µs t S Setup Time 50 ns t DH Hold Time 70 ns t S Setup Time 50 ns t S Setup Time 0.4 µs t H Hold Time 0 µs t H Hold Time 250 ns t H Hold Time 50 ns t H Hold Time 0.4 µs t PD1 Output Delay to 1 2 µs t PD0 Output Delay to 0 2 µs t SV to Status Valid 1 µs t DF to in TRI-STATE = V IL 0.4 µs t WP Write Cycle Time 15 ms NM9366 (MICROWIRE Bus Interface) 4096-Bit Serial EEPROM Capacitance T A = 25 C, f = 1 MHz (Note 5) Symbol Test Typ Max Units C OUT Output Capacitance 5 pf C IN Input Capacitance 5 pf AC Test Conditions Note 1: Stress above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note 2: Typical leakage values are in the 20nA range. Note 3: The shortest allowable clock period = 1/f (as shown under the f parameter). Maximum clock speed (minimum period) is determined by the interaction of several AC parameters stated in the datasheet. Within this period, both t H and t L limits must be observed. Therefore, it is not allowable to set 1/f = t Hminimum + t Lminimum for shorter cycle time operation. Note 4: (Chip Select) must be brought low (to V IL ) for an interval of t in order to reset all internal device registers (device reset) prior to beginning another opcode cycle. (This is shown in the opcode diagram on the following page.) Note 5: This parameter is periodically sampled and not 100% tested. V CC Range V IL /V IH V IL /V IH V OL /V OH I OL /I OH Input Levels Timing Level Timing Level 2.7V V CC 5.5V.03V/1.8V 1.0V 0.8V/1.5V ±10µA (Extended Voltage Levels) 4.5V V CC 5.5V 0.4V/2.4V 1.0V/2.0V 0.4V/2.4V 0.4mA (TTL Levels) Output Load: 1 TTL Gate (C L = 100 pf) NM9366 Rev. C.1 4 www.fairchildsemi.com

Functional Description The NM9366 EEPROM has 10 instructions as described below. All Data-In signals are clocked into the device on the lowto-high transition. Read and Sequential Register Read (READ): The READ instruction outputs serial data on the D0 pin. After a READ instruction is received, the instruction and address are decoded, followed by data transfer from the selected memory register into a 16-bit serial-out shift register. A dummy bit (logical 0) precedes the 16-bit data output string. Output data changes are initiated by a low to high transition of the clock. In the sequential register read mode of operation, the memory automatically cycles to the next register after each 16 data bits are clocked out. The dummy-bit is suppressed in this mode and a continuous string of data is obtained. Write Enable (WEN): When V CC is applied to the part, it powers up in the Write Disable (WDS) state. Therefore, all programming modes must be preceded by a Write Enable (WEN) instruction. Once a Write Enable instruction is executed, programming remains enabled until a Write Disable (WDS) instruction is executed or V CC is completely removed from the part. Write (WRITE): The WRITE instruction is followed by 16 bits of data to be written into the specified address. After the last bit of data is put on the data-in () pin, must be brought low before the next rising edge of the clock. This falling edge of the initiates the selftimed programming cycle. The pin MUST be held high while loading the WRITE instruction, however, after loading the WRITE instruction the pin becomes a don t care. The D0 pin indicates the READY/BUSY status of the chip if is brought high after the t interval. D0 = logical 0 indicates that programming is still in progress. D0 = logical 1 indicates that the register at the address specified in the instruction has been written with the data pattern specified in the instruction and the part is ready for another instruction. Write All (WRALL): The WRALL instruction is valid only when the Protect Register has been cleared by executing a PRCLEAR instruction. The WRALL instruction will simultaneously program all registers with the data pattern specified in the instruction. Like the WRITE instruction, the pin MUST be held high while loading the WRALL instruction, however, after loading the instruction the pin becomes a don t care. As in the WRITE mode, the pin indicates the READY/ BUSY status of the chip if is brought high after the t interval. This function is SABLED if the Protect Register is in use to lock out a section of memory. Write Disable (WDS): To protect against accidental data disturb, the Write Disable (WDS) instruction disables all programming modes and should follow all programming operations. Execution of a READ instruction is independent of both the WEN and WDS instructions. Note: For all Protect Register Operations: If the pin is not held at V IH, all instructions will be applied to the EEPROM array, rather than the Protect Register. Protect Register Read (PRREAD): The PRREAD instruction outputs the address stored in the Protect Register on the pin. The pin MUST be held high while loading the instruction sequence. Following the PRREAD instruction the 6- or 8-bit address stored in the memory protect register is transferred to the serial out shift register. As in the READ mode, a dummy bit (logical 0) precedes the 6- or 8-bit address string. Protect Register Enable (N): The N instruction is used to enable the PRCLEAR, PRWRITE, and PRDS modes. Before the N mode can be entered, the part must be in the Write Enable (WEN) mode. Both the and pins MUST be held high while loading the instruction sequence. Note that a N instruction must immediately precede a PRCLEAR, PRWRITE, or PRDS instruction. Protect Register Clear (PRCLEAR): The PRCLEAR instruction clears the address stored in the Protect Register and, therefore, enables all registers for the WRITE and WRALL instruction. The and pins must be held high while loading the instruction sequence, however, after loading the PRCLEAR instruction the and pins become don t care. Note that a N instruction must immediately precede a PRCLEAR instruction. Please note that the PRCLEAR instruction and the PRWRITE instruction will both program the Protect Register with all 1s. However, the PRCLEAR instruction will allow the LAST register to be programmed, whereas the PRWRITE instruction = all 1s will VENT the last register from being programmed. In addition, the PRCLEAR instruction will allow the use of the WRALL command, where the PRWRITE = all 1s will lock out the Bulk programming opcode. Protect Register Write (PRWRITE): The PRWRITE instruction is used to write into the Protect Register the address of the first register to be protected. After the PRWRITE instruction is executed, all memory registers whose addresses are greater than or equal to the address specified in the Protect Register are protected from the WRITE operation. Note that before executing a PRWRITE instruction the Protect Register must first be cleared by executing a PRCLEAR operation and that the and pins must be held high while loading the instruction, however, after loading the PRWRITE instruction the and pins become "don t care". Note that a N instruction must immediately precede a PRWRITE instruction. Protect Register Disable (PRDS): The PRDS instruction is a ONE TIME ONLY instruction which renders the Protect Register unalterable in the future. Therefore, the specified registers become RMANENTLY protected against data changes. As in the PRWRITE instruction the and pins must be held high while loading the instruction, and after loading the PRDS instruction the and pins become don t care. Note that a N instruction must immediately precede a PRDS instruction. NM9366 (MICROWIRE Bus Interface) 4096-Bit Serial EEPROM NM9366 Rev. C.1 5 www.fairchildsemi.com

Functional Description (Continued) Instruction Set for the NM9366 Instruction SB Op Code Address Data Comments READ 1 10 A7 A0 0 X Reads data stored in memory, starting at specified address. WEN 1 00 11XXXXXX 0 1 Enable all programming modes. WRITE 1 01 A7 A0 D15 D0 0 1 Writes address if unprotected. WRALL 1 00 01XXXXXX D15 D0 0 1 Writes all registers. Valid only when Protect Register is cleared. WDS 1 00 00XXXXXX 0 X Disables all programming modes. PRREAD 1 10 XXXXXXXX 1 X Reads address stored in Protect Register. N 1 00 11XXXXXX 1 1 Must immediately precede PRCLEAR, PRWRITE, and PRDS instructions. PRCLEAR 1 11 11111111 1 1 Clears the Protect Register so that no registers are protected from WRITE. PRWRITE 1 01 A7 A0 1 1 Programs address into Protect Register. Thereafter, memory addresses the address in Protect Register are protected from WRITE. PRDS 1 00 00000000 1 1 ONE TIME ONLY instruction after which the address in the Protect Register cannot be altered. NM9366 (MICROWIRE Bus Interface) 4096-Bit Serial EEPROM 6 www.fairchildsemi.com NM9366 Rev. C.1

Timing Diagrams VIH VIL VIH VIL VIH VIL VOH (Read) VOL VOH (Program) VOL t S t S ts ts ts Synchronous Data Timing VALID DATA t SV t DH th t PD0 1 1 0 A7... A0 th tl th READ: = 0, = X VALID DATA tdh STATUS VALID t PD1 t H th t DF t DF t DS500086-4 NM9366 (MICROWIRE Bus Interface) 4096-Bit Serial EEPROM 0 D15... D0 D15... D0 D15... DS500086-5 The memory automatically cycles to the next register with continued clocking of. WEN: = 0, D0 = TRI-STATE t 1 0 0 1 1 X... X DS500086-6 7 www.fairchildsemi.com NM9366 Rev. C.1

Timing Diagrams (Continued) WDS: = 0, = X, = TRI-STATE 1 0 0 0 0 X... 1 0 1 WRITE: = 0 A7... A0 D15 D0 X t t DS500086-7 NM9366 (MICROWIRE Bus Interface) 4096-Bit Serial EEPROM BUSY READY t WP DS500086-8 WRALL: = 0 (PROTECT REGISTER MUST BE CLEARED) t 1 0 0 0 1 X... X D15 D0 BUSY READY t WP DS500086-9 8 www.fairchildsemi.com NM9366 Rev. C.1

Timing Diagrams (Continued) 1 1 0 X... X PRREAD: = X t 0 A7 A4... A0. X.. N: D0 = TRI-STATE (A WEN CYCLE MUST CEDE A N CYCLE) t DS500086-10 NM9366 (MICROWIRE Bus Interface) 4096-Bit Serial EEPROM 1 0 0 1 1 X... X DS500086-11 PRCLEAR: (A N CYCLE MUST IMMEATELY CEDE A PRCLEAR CYCLE) t 1 1 1 1... 1 1 1 1 BUSY READY twp DS500086-12 9 www.fairchildsemi.com NM9366 Rev. C.1

Timing Diagrams (Continued) PRWRITE: (N CYCLES MUST IMMEATELY CEDE A PRWRITE CYCLE.) 1 0 1 A7... A0 PRDS: (*ONE TIME ONLY INSTRUCTION. A N CYCLE MUST IMMEATELY CEDE A PRDS CYCLE.) t BUSY twp READY DS500086-13 NM9366 (MICROWIRE Bus Interface) 4096-Bit Serial EEPROM t 1 0 0 0... 0 0 0 0 BUSY READY twp DS500086-14 10 www.fairchildsemi.com NM9366 Rev. C.1

Physical Dimensions inches (millimeters) unless otherwise noted 0.010-0.020 (0.254-0.508) x 45 0.0075-0.0098 (0.190-0.249) Typ. All Leads 0.150-0.157 (3.810-3.988) 0.04 (0.102) All lead tips 8 Max, Typ. All leads 0.016-0.050 (0.406-1.270) Typ. All Leads 0.053-0.069 (1.346-1.753) 0.228-0.244 (5.791-6.198) 0.014 (0.356) Lead #1 IDENT 0.050 (1.270) Typ 0.189-0.197 (4.800-5.004) 8 7 6 5 1 2 3 4 Molded Package, Small Outline, 0.15 Wide, 8-Lead (M8) Package Number M08A 0.004-0.010 (0.102-0.254) Seating Plane 0.014-0.020 Typ. (0.356-0.508) NM9366 (MICROWIRE Bus Interface) 4096-Bit Serial EEPROM 11 www.fairchildsemi.com NM9366 Rev. C.1

Physical Dimensions inches (millimeters) unless otherwise noted 0.246-0.256 (6.25-6.5) 0.123-0.128 (3.13-3.30) 0.0433 (1.1) Max 0.0256 (0.65) Typ. 0.114-0.122 (2.90-3.10) 8 5 1 4 Pin #1 IDENT 0.169-0.177 (4.30-4.50) 0.002-0.006 (0.05-0.15) 0.0075-0.0098 (0.19-0.30) DETAIL A Typ. Scale: 40X (1.78) Typ (0.42) Typ (4.16) Typ (7.72) Typ (0.65) Typ Land pattern recommendation See detail A 0-8 0.020-0.028 (0.50-0.70) Notes: Unless otherwise specified 1. Reference JEDEC registration MO153. Variation AA. Dated 7/93 Seating plane Gage plane 0.0035-0.0079 0.0075-0.0098 (0.19-0.25) NM9366 (MICROWIRE Bus Interface) 4096-Bit Serial EEPROM 8-Pin Molded TSSOP, JEDEC (MT8) Package Number MTC08 12 www.fairchildsemi.com NM9366 Rev. C.1

Physical Dimensions inches (millimeters) unless otherwise noted 95 ± 5 0.009-0.015 (0.229-0.381) 0.280 MIN (7.112) 0.300-0.320 (7.62-8.128) 0.325 +0.040-0.015 8.255 +1.016-0.381 0.373-0.400 (9.474-10.16) 0.092 (2.337) A 8 7 6 5 Pin #1 IDENT + 0.040Typ. 0.030 (1.016) (0.762) MAX 20 ± 1 0.125 (3.175) A NOM Option 1 0.045 ± 0.015 (1.143 ± 0.381) 0.065 (1.651) 1 2 3 4 0.050 (1.270) 0.090 (2.286) 0.250-0.005 (6.35 ± 0.127) 0.039 (0.991) Molded Dual-In-Line Package (N) Package Number N08E 0.130 ± 0.005 (3.302 ± 0.127) 0.125-0.140 (3.175-3.556) 90 ± 4 Typ 0.018 ± 0.003 (0.457 ± 0.076) 0.100 ± 0.010 (2.540 ± 0.254) 0.060 (1.524) 0.032 ± 0.005 (0.813 ± 0.127) RAD Pin #1 IDENT 0.020 (0.508) Min 8 7 1 Option 2 0.145-0.200 (3.683-5.080) NM9366 (MICROWIRE Bus Interface) 4096-Bit Serial EEPROM Life Support Policy Fairchild's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President of Fairchild Semiconductor Corporation. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform, when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Americas Europe Hong Kong Japan Ltd. Customer Response Center Fax: +44 (0) 1793-856858 8/F, Room 808, Empire Centre 4F, Natsume Bldg. Tel. 1-888-522-5372 Deutsch Tel: +49 (0) 8141-6102-0 68 Mody Road, Tsimshatsui East 2-18-6, Yushima, Bunkyo-ku English Tel: +44 (0) 1793-856856 Kowloon. Hong Kong Tokyo, 113-0034 Japan Français Tel: +33 (0) 1-6930-3696 Tel; +852-2722-8338 Tel: 81-3-3818-8840 Italiano Tel: +39 (0) 2-249111-1 Fax: +852-2722-8383 Fax: 81-3-3818-8841 Fairchild does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and Fairchild reserves the right at any time without notice to change said circuitry and specifications. NM9366 Rev. C.1 13 www.fairchildsemi.com