Fast Avalanche SMD Rectifier

Similar documents
P6KE6.8A thru P6KE540A. TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor. FEATURES PRIMARY CHARACTERISTICS

Dual Common-Cathode Ultrafast Plastic Rectifier

Small Signal Fast Switching Diode

High Performance Schottky Rectifier, 1 A

High Performance Schottky Rectifier, 3.0 A

High Performance Schottky Rectifier, 1.0 A

Small Signal Fast Switching Diode FEATURES PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS

Schottky Rectifier, 1.0 A

1.5KE6.8A thru 1.5KE540A, 1N6267A thru 1N6303A. TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor.

Schottky Rectifier, 1.0 A

Surface Mount Schottky Barrier

Schottky Rectifier, 100 A

Schottky Rectifier, 1 A

Surface Mount TRANSZORB Transient Voltage Suppressors

High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW

Standard Recovery Diodes, Generation 2 DO-5 (Stud Version), 95 A

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

1 Form A Solid State Relay

Surface Mount Multilayer Ceramic Chip Capacitor Solutions for High Voltage Applications

Silicon PIN Photodiode

High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs

Silicon PIN Photodiode

Silicon PIN Photodiode

Optocoupler, Phototransistor Output, with Base Connection, 300 V BV CEO

PDS5100H. Product Summary. Features and Benefits. Mechanical Data. Description and Applications. Ordering Information (Note 5) Marking Information

High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs

Standard Recovery Diodes, (Stud Version), 40 A

Silicon NPN Phototransistor

Power MOSFET FEATURES. IRFZ44PbF SiHFZ44-E3 IRFZ44 SiHFZ44 T C = 25 C

Reflective Optical Sensor with Transistor Output

Optocoupler, Phototransistor Output, with Base Connection

Optocoupler, Phototransistor Output, AC Input

Power MOSFET FEATURES. IRL540PbF SiHL540-E3 IRL540 SiHL540

Power MOSFET FEATURES. IRF610PbF SiHF610-E3 IRF610 SiHF610. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 V Gate-Source Voltage V GS ± 20

1 Form A Solid State Relay

Power Resistor Thick Film Technology

Solid Tantalum Surface Mount Capacitors TANTAMOUNT, Molded Case, Low ESR

Ultrabright White LED, Ø 3 mm

Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20

Standard Recovery Diodes (Hockey PUK), 2100 A

Metal Film Resistors, Pulse Withstanding Protective

Power MOSFET. IRF510PbF SiHF510-E3 IRF510 SiHF510. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

50 W Power Resistor, Thick Film Technology, TO-220

Optocoupler, Phototransistor Output, with Base Connection

SuperTan Extended (STE) Capacitors, Wet Tantalum Capacitors with Hermetic Seal

Pulse Proof Thick Film Chip Resistors

Reflective Optical Sensor with Transistor Output

Optocoupler, Phototransistor Output, 4 Pin LSOP, Long Creepage Mini-Flat Package

P-Channel 20 V (D-S) MOSFET

Ambient Light Sensor

Aluminum Electrolytic Capacitors Power Economic Printed Wiring

Silicon NPN Phototransistor

Aluminum Electrolytic Capacitors Power Eurodin Printed Wiring

P-Channel 20-V (D-S) MOSFET

AC Line Rated Ceramic Disc Capacitors Class X1, 760 V AC / Class Y1, 500 V AC

Power MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

Aluminum Electrolytic Capacitors Axial Miniature, Long-Life

Aluminum Capacitors Solid Axial

10MQ100N SCHOTTKY RECTIFIER. I F(AV) = 2.1Amp V R = 100V. Bulletin PD rev. M 07/04. Major Ratings and Characteristics. Description/ Features

High-speed switching diodes. Type number Package Configuration Package NXP JEITA JEDEC

STTH2R06. High efficiency ultrafast diode. Features. Description

Low Current SMD LED PLCC-2

Power MOSFET. IRF9520PbF SiHF9520-E3 IRF9520 SiHF9520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS V Gate-Source Voltage V GS ± 20

STTH1R04-Y. Automotive ultrafast recovery diode. Features. Description

STPS5L60. Power Schottky rectifier. Description. Features

Surface Mount Multilayer Ceramic Chip Capacitors for Automotive Applications

PMEG2020EH; PMEG2020EJ

Photovoltaic MOSFET Driver with Integrated Fast Turn-Off, Solid-State Relay

PMEG3015EH; PMEG3015EJ

Power MOSFET FEATURES. IRF540PbF SiHF540-E3 IRF540 SiHF540. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

Optocoupler, Phototransistor Output, Dual Channel, SOIC-8 Package

Diode, Schottky SMB/DO-214AA. Page <1> 24/04/08 V1.1. Dimensions Inches (Millimeters)

BZW50. Transil, transient voltage surge suppressor (TVS) Features. Description

NTMS4920NR2G. Power MOSFET 30 V, 17 A, N Channel, SO 8 Features

HEXFRED Ultrafast Soft Recovery Diode, 25 A

SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS

Power MOSFET FEATURES. IRF9640PbF SiHF9640-E3 IRF9640 SiHF9640

P-Channel 1.25-W, 1.8-V (G-S) MOSFET

BAT54 series SOT23 Schottky barrier diodes Rev. 5 5 October 2012 Product data sheet 1. Product profile 1.1 General description

Green. Part Number Qualification Case Packaging B1X0Q-13-F Automotive SMA 5,000/Tape & Reel B1X0BQ-13-F Automotive SMB 3,000/Tape & Reel

Schottky barrier quadruple diode

Features. Case: TO (2), TO-220F-3 (Option 1), TO (1) and TO Power Management Instrumentation

PMEG1020EA. 1. Product profile. 2 A ultra low V F MEGA Schottky barrier rectifier. 1.1 General description. 1.2 Features. 1.

2.5 A Output Current IGBT and MOSFET Driver

N-Channel 100 V (D-S) MOSFET

PMEG3005EB; PMEG3005EL

SMD Aluminum Solid Capacitors with Conductive Polymer

SMD PTC - Nickel Thin Film Linear Thermistors

Preamplifier Circuit for IR Remote Control

UV SMD LED PLCC-2 FEATURES APPLICATIONS. at I F (ma) (ma) MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX.

Aluminum Electrolytic Capacitors Radial Miniature, Low Impedance, High Vibration Capability

Electrical Double Layer Energy Storage Capacitors Power and Energy Versions

Standard Thick Film Chip Resistors

Optocoupler, Phototransistor Output, High Reliability, 5300 V RMS, Low Input Current

1.5SMC6.8AT3G Series, SZ1.5SMC6.8AT3G Series Watt Peak Power Zener Transient Voltage Suppressors. Unidirectional*

Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20

Low forward voltage High breakdown voltage Guard-ring protected Hermetically sealed glass SMD package

IR Receiver Module for Light Barrier Systems

AC Line Rated Ceramic Disc Capacitors Class X1, 760 V AC, Class Y1, 500 V AC

Transcription:

BYG2K-E3/HE3, BYG2M-E3/HE3 Fast Avalanche SMD Rectifier DO-24AC (SMA) PRIMARY CHARACTERISTICS I F(AV).5 A V RRM 8 V, V I FSM 3 A I R. μa V F.6 V t rr 2 ns E R 2 mj T J max. 5 C Package DO-24AC (SMA) Diode variation Single die FEATURES Low profile package Ideal for automated placement Glass passivated pellet chip junction Low reverse current Soft recovery characteristic Fast reverse recovery time Meets MSL level, per J-STD-2, LF maximum peak of 26 C AEC-Q qualified Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 TYPICAL APPLICATIONS For use in fast switching rectification of power supply, inverters, converters, and freewheeling diodes for consumer, automotive, and telecommunication. MECHANICAL DATA Case: DO-24AC (SMA) Molding compound meets UL 94 V- flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3 - RoHS-compliant, AEC-Q qualified Terminals: Matte tin plated leads, solderable per J-STD-2 and JESD 22-B2 E3 suffix meets JESD 2 class 2 whisker test, HE3 suffix meets JESD 2 class 2 whisker test Polarity: Color band denotes the cathode end MAXIMUM RATINGS (T A = 25 C unless otherwise noted) PARAMETER SYMBOL BYG2K BYG2M UNIT Device marking code BYG2K BYG2M Maximum repetitive peak reverse voltage V RRM 8 V Average forward current I F(AV).5 A Peak forward surge current ms single half sine-wave superimposed on rated load I FSM 3 A Pulse energy in avalanche mode, non repetitive (inductive load switch off) I (BR)R = A, T J = 25 C E R 2 mj Operating junction and storage temperature range T J, T STG -55 to +5 C Revision: 23-Feb-6 Document Number: 8896

Average Forward Current (A) www.vishay.com BYG2K-E3/HE3, BYG2M-E3/HE3 ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL BYG2K BYG2M UNIT Maximum instantaneous I F = A.5 T forward voltage J = 25 C V () F I F =.5 A.6 T J = 25 C Maximum reverse current I R T J = C Maximum reverse recovery time I F =.5 A, I R =. A, I rr =.25 A Note () Pulse test: 3 μs pulse width, % duty cycle t rr 2 ns V µa THERMAL CHARACTERISTICS (T A = 25 C unless otherwise noted) PARAMETER SYMBOL BYG2K BYG2M UNIT Typical thermal resistance, junction to lead, T L = const. R JL 25 C/W Typical thermal resistance, junction to ambient Notes () Mounted on epoxy-glass hard tissue (2) Mounted on epoxy-glass hard tissue, 5 mm 2 35 μm Cu (3) Mounted on Al-oxide-ceramic (Al 2 O 3 ), 5 mm 2 35 μm Cu R JA () 5 R (2) JA 25 R (3) JA C/W ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE BYG2K-E3/TR.64 TR 8 7" diameter plastic tape and reel BYG2K-E3/TR3.64 TR3 75 3" diameter plastic tape and reel BYG2KHE3/TR ().64 TR 8 7" diameter plastic tape and reel BYG2KHE3/TR3 ().64 TR3 75 3" diameter plastic tape and reel Note () AEC-Q qualified RATINGS AND CHARACTERISTICS CURVES (T A = 25 C unless otherwise noted).6 T J = 5 C.4 R θja = 25 K/W Half Sine-Wave Forward Current (A).. T J = 25 C.2..8.6.4 R θja = 25 K/W R θja = 5 K/W.2..5..5 2. 2.5 3. 3.5 Forward Voltage (V) Fig. - Forward Current vs. Forward Voltage. 25 5 75 25 5 Ambient Temperature ( C) Fig. 2 - Max. Average Forward Current vs. Ambient Temperature Revision: 23-Feb-6 2 Document Number: 8896

Diode Capacitance (pf) www.vishay.com BYG2K-E3/HE3, BYG2M-E3/HE3 2 Reverse Current (µa) 25 5 75 25 5 Junction Temperature ( C) Reverse Recovery Charge (nc) T A = 25 C 5 T A = C T A = 75 C T A = 5 C T A = 25 C 5 I R =.5 A, i R =.25 A.2.4.6.8. Forward Current (A) Fig. 3 - Reverse Current vs. Junction Temperature Fig. 6 - Max. Reverse Recovery Charge vs. Forward Current Reverse Power Dissipation (mw) 2 8 6 4 2 P R - Limit at 8 % V R 25 5 75 25 5 Junction Temperature ( C) P R - Limit at % V R Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature Thermal Resistance for Pulse Cond. (K/W) 25 K/W DC t p /T =.5 t p /T =.2 t p /T =. t p /T =.5 t p /T =.2 Single Pulse t p /T =. -5-4 -3-2 - 2 Pulse Length (s) Fig. 7 - Thermal Response 25 f = MHz 2 5 5. Reverse Voltage (V) Fig. 5 - Diode Capacitance vs. Reverse Voltage Revision: 23-Feb-6 3 Document Number: 8896

BYG2K-E3/HE3, BYG2M-E3/HE3 PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-24AC (SMA) Cathode Band Mounting Pad Layout.65 (.65).49 (.25). (2.79). (2.54).66 (.68) MIN..74 (.88) MAX..77 (4.5).57 (3.99).2 (.35).6 (.52).6 (.52) MIN..9 (2.29).78 (.98).28 (5.28) REF..6 (.52).3 (.76).8 (.23) ().28 (5.28).94 (4.93) Revision: 23-Feb-6 4 Document Number: 8896

Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Revision: 3-Jun-6 Document Number: 9