Curriculum Vitae of Dr. Carmine Abbate, Ph.D. Identity Name: Carmine Surname: Abbate Date of birth: July 5, 1976 Nationality: Italian Country of residence: Italy Contact Details Office: +39.0776.299.4369 Mobile: +39 333.472.3848 Qualifications - Philosophiae Doctor in Electrical and Information Engineering from the University of Cassino, Italy, in February 2006, with a thesis on Electromagnetic Interference generated by power IGBT modules in high power converter circuits. - Degree in Telecommunication Engineering, 110/110, from the University of Cassino, Italy, in January 2002 with a thesis on Smart antennas for Wireless Local Loop. Career - Post degree research contract at University of Cassino, Italy, on Analysis and characterization of IGBT modules for railway applications operating at the edge of the safe operating area, in HIMRATE project, 2002 to 2003; - Ph.D. course at University of Cassino, 2003 to 2006; - Research contract at University of Cassino on Test and development of experimental set ups for power device characterization at low and high temperatures and Series connection of high power IGBT modules in INTERMOD project 2007 to 2008; - Research contract at University of Cassino on Cosmic Rays Effects on power devices for innovative switching converter for space applications, 2007 to 2009; - Temporary researcher at University of Cassino, Italy, from 2010 to 2015. Teaching activities - From 2003 to date: teachings of Laboratory of Electronics, Electronic for Telecommunications, Electronics of Digital Communications and Electronics for Telematics at degree and master degree in Electrical Engineering, Information Engineering and Telecommunications Engineering, respectively, at the University of Cassino; - Thesis supervisor and co-supervisor of over 40 thesis in Electronic Engineering, Electrical Engineering and Telecommunications Engineering on topics related to research topics of interest.
Funded research projects DAEIMI, University of Cassino, and the company Ansaldobreda Spa under the Fourth Framework Program. Project title: "HIMRATE" (2000-2002); DAEIMI, University of Cassino, and the Italian Space Agency entitled "Switching Converters with high efficiency and innovative power devices for space applications" (2000-2003) ; DAEIMI, University of Cassino, and the company Ansaldobreda Spa under the P.O.N.(L.593/2000). Project title: "TEINTRE" (2002-2005); DAEIMI, University of Cassino, and the company Ansaldobreda Spa, entitled "Studies and qualifications of Presspack IGBT modules and high-voltage isolation", 2007-2008, included into the Ministry project named "INTERMOD". Main Collaborations - ECPE (European Centre for Power Electronics); - Ansaldobreda Spa.; - ST Microelectronics; - Fairchild Semiconductor; - INFN (Istituto Nazionale di Fisica Nucleare) - Fermilab, Chicago Peer-reviewed publications - Author of 23 publications in international journals and 24 international conference proceedings; - Co-author of one invited contribution; - Author of an international patent. Research activities 1. Study of reliability and non destructive characterization of power devices in extreme operating conditions (overload, short circuit, over temperature, very low temperature); 2. Study of mechanisms of instability of power electronic devices in critical conditions (2 nd Breakdown, latch-up, avalanche condition) and drafting of related forecasting models; 3. Design and development of power converters, power pulse generators, and non destructive testers for power devices; 4. Study, simulation and optimization of new circuit topologies for series connection of power IGBT modules. Study about the optimization of IGBT commutation. EMI analysis and modeling in high power devices;
5. Programmable digital hardware for the innovative control of power electronic converters and custom non-destructive power device testing. Publication list Papers on international journals 1. G. Busatto, L. Fratelli, C. Abbate, R. Manzo, F. Iannuzzo: Analysis and Optimisation through Innovative Driving Strategies of High Power IGBT Performances/EMI Reduction Trade-off for Converter Systems in Railway Applications Microelectronics Reliability, Vol. 44, 2004, pp. 1443-1448. 2. C. Abbate, G. Busatto, L. Fratelli, F. Iannuzzo: The High Frequency Behavior of High Voltage and Current IGBT Modules, Microelectronics Reliability, Vol.46, 2006, pp.1848-1853. 3. F. Iannuzzo, G. Busatto, C. Abbate: Investigation of MOSFET failure in soft-switching conditions, Microelectronics Reliability, Vol.46, 2006, pp.1790-1794. 4. C. Abbate, G. Busatto, L. Fratelli, F. Iannuzzo, B. Cascone, R. Manzo: The Robustness of Series Connected High Power IGBT Modules, Microelectronics Reliability, Vol. 47, 2007, pp.1746-1750. 5. G. Busatto, C. Abbate, B. Abbate, F. Iannuzzo: IGBT Modules Robustness During Turn-Off Commutation, Microelectronics Reliability, Vol 48, 2008, pp. 1435-1439. 6. G. Busatto, C. Abbate, F. Iannuzzo, P. Cristofaro: Instable Mechanisms During Unclamped Operation of High Power IGBT Modules, Microelectronics Reliability, Vol 49, 2009, pp. 1363-1369. 7. C. Abbate, G. Busatto, F. Iannuzzo: High Voltage, High Performance Switch using Series Connected IGBTs, Power Electronics, IEEE Transactions on Volume: 25, Issue: 9 Digital Object Identifier: 10.1109/TPEL.2010.2049272 Publication Year: 2010, pp. 2450-2459. 8. C. Ronsisvalle, V. Enea, C. Abbate, G. Busatto, A. Sanseverino: Perspective Performances of MOS-Gated GTO in High-Power Applications, IEEE Trans. Electron Devices, Vol. ED- 57, p. 2339-2343, September 2010. 9. C. Abbate, G. Busatto, F. Iannuzzo, IGBT RBSOA non-destructive testing methods: Analysis and discussion, Microelectronics Reliability, Volume 50, Issues 9-11, September-November 2010, Pages 1731-1737, ISSN 0026-2714, DOI: 10.1016/j.microrel.2010.07.050. 10. C. Abbate, G. Busatto, F. Iannuzzo, "Operation of SiC normally-off JFET at the edges of its safe operating area", Microelectronics Reliability, Volume 51, Issues 9-11, September-November 2011, Pages 1767-1772, ISSN 0026-2714, DOI: 10.1016/j.microrel.2011.07.055. 11. C. Abbate, G. Busatto, F. Iannuzzo, Unclamped repetitive stress on 1200 V normallyoff SiC JFETs, Microelectronics Reliability, Volume 52, Issues 9 10, September
October 2012, Pages 2420-2425, ISSN 0026-2714, DOI: 10.1016/j.microrel.2012.06.097. 12. C. Abbate, M. Alderighi, S. Baccaro, G. Busatto, M. Citterio, P. Cova, N. Belmonte, V. De Luca, S. Fiore, S. Gerardin, E. Ghisolfi, F. Giuliani, F. Iannuzzo, A. Lanza, S. Latorre, M. Lazzaroni, G. Meneghesso, A. Paccagnella, F. Rampazzo, M. Riva, A. Sanseverino, R. Silvestri, G. Spiazzi,F. Velardi, E. Zanoni, Developments on DC/DC converters for the LHC experiment upgrades, Journal of Instrumentation 9 (02), C02017, 2014. 13. C. Abbate, G. Busatto, F. Iannuzzo, C. Ronsisvalle, A. Sanseverino, F. Velardi, Scattering parameter approach applied to the stability analysis of power IGBTs in Short Circuit Microelectronics Reliability Vol.53, Issue9-11, 2013, pp.1707-1712. 14. C. Abbate, G. Busatto, F. Iannuzzo, Thermal Instability during Short Circuit of Normally-Off AlGaN/GaN HFETs Microelectronics Reliability Vol.53, Issue9-11, 2013. 15. F. Iannuzzo, G. Busatto, C. Abbate, Instabilities in Silicon Power Devices: A Review of Failure Mechanisms in Modern Power Devices, IEEE Industrial Electronics Magazine, 2014, IEEE 8 (3), pp. 28-39. 16. C. Abbate, G. Busatto, P. Cova, N. Delmonte, F. Giuliani, F. Iannuzzo, A. Sanseverino, F. Velardi, Thermal damage in SiC Schottky diodes induced by SE heavy ions, Microelectronics Reliability 54 (9), pp. 2200-2206, 2014. 17. C. Abbate, F. Iannuzzo, G. Busatto, A. Sanseverino, F. Velardi, C. Ronsisvalle, J Victory, Turn-off instabilities in large area IGBTs, Microelectronics Reliability 54 (9), pp. 1927-1934, 2014. 18. C. Abbate, R. Di Folco, High Frequency Behavior of High Power IGBT Modules, Universal Journal of Electrical and Electronic Engineering, 3, 17-23. doi: 10.13189/ujeee.2015.030104, 2015. 19. C. Abbate, R. Di Folco, A. Evangelista, Multi-baseline SAR Interferometry using Elaboration of Amplitude and Phase Data. Universal Journal of Electrical and Electronic Engineering, 3, 55-63., 2015, doi: 10.13189/ujeee.2015.030204. 20. C. Abbate, R. Di Folco, Modelling and Analysis of EMI Generated of Power IGBT Modules. Universal Journal of Electrical and Electronic Engineering, 3, 49 54, 2015,. doi: 10.13189/ujeee.2015.030203. 21. C. Abbate, G. Busatto, P. Cova, N. Delmonte, F. Giuliani, F. Iannuzzo, A. Sanseverino, F. Velardi: Analysis of heavy ion irradiation induced thermal damage in SiC Schottky diodes, Transaction on Nuclear Science, 202-209, 2015. 22. C. Abbate, G. Busatto, F. Iannuzzo, S. Mattiazzo, A. Sanseverino L. Silvestrin, D. Tedesco, F. Velardi: Experimental Study of Single Event Effects Induced by Heavy Ion Irradiation in Enhancement Mode GaN Power HEMT in fase di pubblicazione su Microelectronics Reliability 2015. 23. C. Abbate, G. Busatto, A. Sanseverino, F. Velardi, C. Ronsisvalle: Analysis of Low and High Frequency Oscillations in IGBTs during Turn on Short Circuit Trans. on Electron Devices, pp. 2952 2958, 2015, DOI: 10.1109/TED.2015.2459135.
Contributions to international conferences 24. G. Busatto, C. Abbate, B. Cascone, R. Manzo, L. Fratelli, G. Giannini, F. Iannuzzo, F. Velardi; Characterisation of high-voltage IGBT modules at high temperature and high currents, The Fifth International Conference on Power Electronics and Drive Systems, 2003. PEDS 2003. Volume: 2, pp. 1391 1396, 17-20 November 2003. 25. R. Manzo, G. Busatto, L. Fratelli, G. Giannini, R. Nisci, C. Abbate, Optimization of High-Voltage IGBT Modules Turn-on on Inductive Load Proc. 10th European Conference on Power Electronics and Applications, EPE 2003, September 2003. 26. C. Abbate, R. Manzo, F. Iannuzzo, B. Cascone, G. Busatto, G. Giannini, Driving optimization of high voltage IGBT modules for traction application SPEEDAM 2004, Capri (Italy), June 16-18, 2004. 27. C. Abbate, G. Busatto, R. Manzo, L. Fratelli, B. Cascone, G. Giannini, F. Iannuzzo, Experimental Optimisation of high power IGBT Modules Performances Working at the Edges of their Safe Operating Area Proc. IEEE Power Electronics Specialist Conference, PESC 2004, pp. 2588-2592, June, 2004. 28. G. Busatto, C. Abbate, F. Iannuzzo, L. Fratelli, B. Cascone, G. Giannini: EMI Characterisation of high power IGBT modules For Traction Application Power Electronics Specialists Conference, 2005, PESC 05, Record 36th, pp. 2180-2186, Recife Brazil, June 2005. 29. C. Abbate, G. Busatto, L. Fratelli, F. Iannuzzo: The Role of IGBT Module in Electromagnetic Noise Emission of Power Converters ESREF 05, 10-14 October 2005, Arcachon, Francia. 30. G. Busatto, C. Abbate, L. Fratelli, F. Iannuzzo, G. Giannini, B. Cascone: EMI Analysis in High power Converters for Traction Application EPE 2005, 11-14 September 2005, Dresden, Germany, ISBN: 90-75815-08-5. 31. C. Abbate, G. Busatto, L. Fratelli, F. Iannuzzo, B. Cascone, G. Giannini: Series Connection of High Power IGBT modules for traction applications EPE 2005, 11-14 September 2005, Dresden, Germania, ISBN: 90-75815-08-5. 32. C. Abbate, G. Busatto, L. Fratelli, F. Iannuzzo: Experimental - Simulative procedure to Predict the EMI Generated in High Power Converters based on IGBT modules, CIPS 2006, pp. 117-122, Naples, Italy. 33. C. Abbate, G. Busatto, F. Iannuzzo, L. Fratelli: Experimental Characterisation of High Efficiency Resonant Gate Driver Circuit, EPE 2007, 2-5 September 2007, Aalborg, Denmark, pp. 1-8, digital object: 10.1109/EPE.2007.4417585. 34. C. Abbate, M. Morozov, G. Rubinacci, A. Tamburrino, S. Ventre: A probe array for fast quantitative eddy current imaging, in E NDE, Electromagnetic Non-destructive Evaluation (X), S. Takahashi and H. Kikuchi (Eds.), pp. 75-82, IOS Press, 2007. 35. G. Busatto, C. Abbate, B. Abbate, F. Iannuzzo: Non-Destructive Experimental Investigation about RBSOA in High Power IGBT Modules, CIPS 2008, 11-13 March, 2008, Nuremberg, Germany.
36. G. Busatto, C. Abbate, F. Iannuzzo, B. Abbate, L. Fratelli, B. Cascone, R. Manzo: High Voltage, High Performance Switch using Series Connected IGBTs, PESC2008, 15-19 June 2008, Rhodes, Greece, pp. 1606-1611. 37. C. Abbate, G. Busatto, F. Iannuzzo: The Effects of the Stray Elements on the Failure of Parallel Connected IGBTs during Turn-Off, EPE2009, 8-10 September 2009, Barcelona, Spain, pp 1-9, ISBN: 9789075815009. 38. C. Ronsisvalle, V. Enea, C. Abbate, G. Busatto, A. Sanseverino: Performances of MOS-Gated GTO in High Voltage Power Applications, EPE2009, 8-10 September 2009, Barcelona, Spain, pp. 1-8, ISBN: 9789075815009. 39. C. Ronsisvalle, V. Enea, C. Abbate, G. Busatto, A. Sanseverino: MOS-Gated GTO: a new functionally integrated device suitable for high voltage power applications, CIPS2010, 16-18 March 2010, Nuremberg. 40. C. Abbate, G. Busatto, F. Iannuzzo, C. Pagliarone, G.M. Piacentino, F. Bedeschi, Comparison among eligible topologies for MARX klystron modulators, Proc. 1st International Particle Accelerator Conference, IPAC 10, pp. 3284-3286, Kyoto Japan (ISBN 978-92-9083-352-9). 41. C. Abbate, G. Busatto, A. Sanseverino, F. Velardi, C. Ronsisvalle, H. Fischer, K.S. Park: High Frequency Capacitive behavior of field stop trench gate IGBTs operating in Short Circuit, Proc. of Applied Power Electronics Conference, pp. 183-188, 2013, DOI: 10.1109/ APEC.2013.6520205. 42. C. Abbate, G. Busatto, A. Sanseverino, C. Ronsisvalle,Experimental and Numerical Study of Low and High Frequency Oscillations in IGBTs during Short Circuit, PCIM 2014, Nuremberg. 43. S. Fiore, C. Abbate, S. Baccaro, G. Busatto,M. Citterio, F. Iannuzzo, A. Lanza, S. Latorre, M. Lazzaroni, A. Sanseverino, F. Velardi Radiation and magnetic field effects on new semiconductor power devices for HL-LHC experiments, 14th ICAPTT Conference on Astroparticle, Particle, Space Physics and Detectors for Physics and Applications, Villa Olmo (Como-Italia) 23-27 September 2013. 44. C. Abbate, M. Alderighi, S. Baccaro, G. Busatto, M.Citterio, P. Cova, N. Delmonte, V. De Luca, S. Fiore, S. Gerardin, E. Ghisolfi, F. Giuliani, F. Iannuzzo, A. Lanza, S. Latorre, M. Lazzaroni, G. Meneghesso, A. Paccagnella, F. Rampazzo, M.Riva, A. Sanseverino, R. Silvestri, G. Spiazzi,F. Velardi, E. Zanoni, Radiation performance of new semiconductor power devices for the LHC experiment upgrades, 11th International Conference on Large Scale Applications and Radiation Hardness of Semiconductor Detectors, RD13, 3-5 July 2013. 45. C. Abbate, G. Busatto, A. Sanseverino, C. Ronsisvalle, Experimental and Numerical Study of Low and High Frequency Oscillations in IGBTs during Short Circuit, PCIM Europe 2014; International Exhibition and Conference for Power, pp. 1 8, 2014. 46. N. Bonora, A. Ruggiero, G. Iannitti, C. Abbate, F. Iannuzzo, G. Busatto, Mechanoluminescence of nylon under high velocity impact, Journal of Physics: Conference Series 500 (18), 182005, 2014. 47. C. Abbate, S. Baccaro, G. Busatto, M. Citterio, P. Cova, N. Delmonte, V. De Luca, S. Fiore, F. Giuliani, F. Iannuzzo, A. Lanza, S. Latorre, M. Lazzaroni, A. Sanseverino, G.
Spiazzi, F. Velardi, Testing integrated COTS DC/DC converters in hostile environment, Common ATLAS CMS electronics workshop for LHC upgrades: ACES, 2014. 48. C. Abbate, R. Di Folco, I. De Bellis and Z. Varga, Stability Analysis of IGBT based on Simulation and Measurement of Scatter Parameters, Mechanical Engineering Letters, Vol. 13 (2015), 97-105. Invited contributions 49. G. Busatto, C. Abbate, F. Iannuzzo, Non Destructive SOA Testing of Power Modules (Invited paper), 6th International Conference on Integrated Power Electronics Systems, CIPS 2010, Nuremberg, Germany, March 16-18 2010. International Patents 50. WO 2014097261 A3: Method for Driving Inverters, and Inverter Adapted to Reduce Switching Losses.