How To Make A Two Series Cell Battery Pack Supervisor Module

Similar documents
Smart Battery Module with LEDs and Pack Supervisor

bq2114 NiCd or NiMH Gas Gauge Module with Charge-Control Output Features General Description Pin Descriptions

SN54165, SN54LS165A, SN74165, SN74LS165A PARALLEL-LOAD 8-BIT SHIFT REGISTERS

TSL250, TSL251, TLS252 LIGHT-TO-VOLTAGE OPTICAL SENSORS

SN54HC157, SN74HC157 QUADRUPLE 2-LINE TO 1-LINE DATA SELECTORS/MULTIPLEXERS

Signal Conditioning Wheatstone Resistive Bridge Sensors

SDLS068A DECEMBER 1972 REVISED OCTOBER Copyright 2001, Texas Instruments Incorporated

SN54F157A, SN74F157A QUADRUPLE 2-LINE TO 1-LINE DATA SELECTORS/MULTIPLEXERS

SN54HC191, SN74HC191 4-BIT SYNCHRONOUS UP/DOWN BINARY COUNTERS

SN28838 PAL-COLOR SUBCARRIER GENERATOR

Theory of Operation. Figure 1 illustrates a fan motor circuit used in an automobile application. The TPIC kω AREF.

August 2001 PMP Low Power SLVU051

TSL INTEGRATED OPTO SENSOR

SN54ALS191A, SN74ALS191A SYNCHRONOUS 4-BIT UP/DOWN BINARY COUNTERS

APPLICATION BULLETIN

Audio Tone Control Using The TLC074 Operational Amplifier

AAT3520/2/4 MicroPower Microprocessor Reset Circuit

A Low-Cost, Single Coupling Capacitor Configuration for Stereo Headphone Amplifiers

SA57608 One-cell Lithium-ion battery protection with over/undercharge and overcurrent protection

45 V, 100 ma NPN/PNP general-purpose transistor

Signal Conditioning Piezoelectric Sensors

Supply voltage Supervisor TL77xx Series. Author: Eilhard Haseloff

How To Close The Loop On A Fully Differential Op Amp

40 V, 200 ma NPN switching transistor

65 V, 100 ma PNP/PNP general-purpose transistor

IrDA Transceiver with Encoder/Decoder

High-Speed Gigabit Data Transmission Across Various Cable Media at Various Lengths and Data Rate

Medium power Schottky barrier single diode

Understanding the Terms and Definitions of LDO Voltage Regulators

SINGLE-SUPPLY OPERATION OF OPERATIONAL AMPLIFIERS

DATA SHEET. MMBT3904 NPN switching transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct Feb 03.

PMEG3005EB; PMEG3005EL

PMEG1020EA. 1. Product profile. 2 A ultra low V F MEGA Schottky barrier rectifier. 1.1 General description. 1.2 Features. 1.

The sensor can be operated at any frequency between DC and 1 MHz.

Binary Search Algorithm on the TMS320C5x

Designing With the SN54/74LS123. SDLA006A March 1997

Designing Gain and Offset in Thirty Seconds

CUSTOM GOOGLE SEARCH PRO. User Guide. User Guide Page 1

DATA SHEET. PBSS5540Z 40 V low V CEsat PNP transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2001 Jan Sep 21.

Floating Point C Compiler: Tips and Tricks Part I

Product Datasheet P MHz RF Powerharvester Receiver

TPN4R712MD TPN4R712MD. 1. Applications. 2. Features. 3. Packaging and Internal Circuit Rev.4.0. Silicon P-Channel MOS (U-MOS )

Controlling TAS5026 Volume After Error Recovery

INTEGRATED CIRCUITS. NE558 Quad timer. Product data Supersedes data of 2001 Aug Feb 14

Silicon temperature sensors. Other special selections are available on request.

MH Hybrid Subscriber Line Interface Circuit (SLIC) Preliminary Information. Features. Description. Applications. Ordering Information

WHAT DESIGNERS SHOULD KNOW ABOUT DATA CONVERTER DRIFT

RETRIEVING DATA FROM THE DDC112

Analysis of Filter Coefficient Precision on LMS Algorithm Performance for G.165/G.168 Echo Cancellation

Texas Instruments. FB PS LLC Test Report HVPS SYSTEM AND APPLICATION TEAM REVA

PESDxU1UT series. 1. Product profile. Ultra low capacitance ESD protection diode in SOT23 package. 1.1 General description. 1.

2PD601ARL; 2PD601ASL

MOSFET N-channel enhancement switching transistor IMPORTANT NOTICE. use

DISCRETE SEMICONDUCTORS DATA SHEET BC856; BC857; BC858

TSM2N7002K 60V N-Channel MOSFET

CAN bus ESD protection diode

Wide Bandwidth, Fast Settling Difet OPERATIONAL AMPLIFIER

PMEG2020EH; PMEG2020EJ

PMEG3015EH; PMEG3015EJ

10 ma LED driver in SOT457

3-input EXCLUSIVE-OR gate. The 74LVC1G386 provides a 3-input EXCLUSIVE-OR function.

Schottky barrier quadruple diode

BD239, BD239A, BD239B, BD239C NPN SILICON POWER TRANSISTORS

VN05N. High side smart power solid state relay PENTAWATT. Features. Description

Filter Design in Thirty Seconds

Application Report SLVA051

0.9V Boost Driver PR4403 for White LEDs in Solar Lamps

Order code Temperature range Package Packaging

Wireless Subwoofer TI Design Tests

SG6516 PC Power Supply Supervisors

CS4525 Power Calculator

INTEGRATED CIRCUITS. 74LVC08A Quad 2-input AND gate. Product specification IC24 Data Handbook Jun 30

4-bit binary full adder with fast carry CIN + (A1 + B1) + 2(A2 + B2) + 4(A3 + B3) + 8(A4 + B4) = = S1 + 2S2 + 4S3 + 8S4 + 16COUT

ADJUSTABLE VOLTAGE AND CURRENT REGULATOR

DATA SHEET. PMEGXX10BEA; PMEGXX10BEV 1 A very low V F MEGA Schottky barrier rectifier DISCRETE SEMICONDUCTORS

Multi-Transformer LED TV Power User Guide. Anderson Hsiao

µa7800 SERIES POSITIVE-VOLTAGE REGULATORS

TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TAR5SB15~TAR5SB50

DISCRETE SEMICONDUCTORS DATA SHEET

The 74LVC1G11 provides a single 3-input AND gate.

LM556 LM556 Dual Timer

Current-Transformer Phase-Shift Compensation and Calibration

TIC225 SERIES SILICON TRIACS

DISCRETE SEMICONDUCTORS DATA SHEET. BZX384 series Voltage regulator diodes. Product data sheet Supersedes data of 2003 Apr 01.

DISCRETE SEMICONDUCTORS DATA SHEET. dbook, halfpage M3D088. BB201 Low-voltage variable capacitance double diode. Product specification 2001 Oct 12

Designing Applications with Lithium-Ion Batteries

INTEGRATED CIRCUITS. 74F74 Dual D-type flip-flop. Product specification Supercedes data of 1990 Oct 23 IC15 Data Handbook.

Standard Linear & Logic Semiconductor Marking Guidelines

DISCRETE SEMICONDUCTORS DATA SHEET

EDI s x32 MCM-L SRAM Family: Integrated Memory Solution for TMS320C3x DSPs

2STBN15D100. Low voltage NPN power Darlington transistor. Features. Application. Description

SCR, 12 A, 15mA, 500 V, SOT78. Planar passivated SCR (Silicon Controlled Rectifier) in a SOT78 plastic package.

PRTR5V0U2F; PRTR5V0U2K

STLQ ma, ultra low quiescent current linear voltage regulator. Description. Features. Application

Low forward voltage High breakdown voltage Guard-ring protected Hermetically sealed glass SMD package

Motor Speed Measurement Considerations When Using TMS320C24x DSPs

ESDLIN1524BJ. Transil, transient voltage surge suppressor diode for ESD protection. Features. Description SOD323

Passivated, sensitive gate triacs in a SOT54 plastic package. General purpose switching and phase control

Quad 2-input NAND Schmitt trigger

DISCRETE SEMICONDUCTORS DATA SHEET. BT151 series C Thyristors

Transcription:

Features Complete and compact lithium-ion pack supervisor Provides overvoltage, undervoltage, and overcurrent protection for two series Li-Ion cells Combines bq2058t with charge/discharge control FETs Low side low on-resistance FETs Designed for battery pack integration Direct connection for series battery terminals Measures 1.70 X 0.70 inches Low standby and operating currents General Description Preliminary bq2158t Two Series Cell Li-Ion Pack Supervisor Module The bq2158t provides a complete solution for the supervision of two series Li-Ion cells. Designed for battery pack integration, the bq2158t incorporates a bq2058t Pack Supervisor, two FETs, and all other components required to monitor overvoltage, undervoltage, and overcurrent conditions. The board provides direct connections for the negative and positive terminals of each cell. See Figure 1. Please refer to the bq2058t data sheet for specific information on the operation of the bq2058t. Unitrode configures the bq2158t based on the information in Table 1. Pin Descriptions B1P Battery 1 positive input B1N Battery 1 negative input B2N Battery 2 negative input POS Pack positive NEG Pack negative 4/99 1

bq2158t Preliminary Table 1. bq2158t Module Configuration Customer Name: Contact: Phone: Address: Sales Contact: Phone: Overvoltage threshold (4.25V) Charge current (3.8A max.) Discharge current (3.8A max.) FAE approval: Date: 2

Preliminary bq2158t POS B1P B1N Load or Charger B2N NEG Note: B1P, B2N, POS, and NEG accomodate a #20 AWG stranded wire. B1N accomodates a #24 AWG stranded wire. FG2158Tcd.eps Figure 1. Module Connection Diagram Operation The bq2158t monitors each series element for undervoltage, over-voltage, and over-current conditions. If a cell falls below V UV for t UVD, the bq2158t enters into sleep mode. The bq2158t wakes up and enables discharge if a voltage, V CD higher than the battery voltage, is applied across POS and NEG. Charging is disabled if a cell exceeds V OV for t OVD, and can resume when the cell falls below the V CE threshold. The bq2158t turns the discharge FET off if the steady state load current exceeds I OC for t OCD and turns it back on if the load is removed. 3

bq2158t Preliminary bq2158t Schematic bq2158t-b6/18/98 4

Preliminary bq2158t bq2158t Board 1.700.700 POS Q1 C8 R1 Q3 C2 C5 C6 R6 C1 U1 B1P B1N 2x.645.355 TP1 B2N 2x.055.000.000 2x.055 3x 1.645 Q2 R5 R3 C4 R7 NEG C7 R2 R4 D1 C3.068.031 LAYER 1 LAYER 2 5

bq2158t Preliminary Absolute Maximum Ratings Symbol Parameter Value Unit Conditions V OP Supply voltage (B1P to B2N) 12 V DC Maximum duration = V TR Maximum transient voltage (B1P to B2N) 32 V 1.5µs V CHG Charging voltage (POS to NEG) 12 V V I CHG Continuous charge/discharge current 3.8 A OP > 4V T A = 25 C T OPR Operating temperature -30 to +70 C T STG Storage temperature -55 to +125 C Note: Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation should be limited to the Recommended DC Operating Conditions detailed in this data sheet. Exposure to conditions beyond the operational limits for extended periods of time may affect device reliability. DC Electrical Characteristics (T A = T OPR ) Symbol Parameter Minimum Typical Maximum Unit Conditions/Notes V OP Operating voltage, B1P to B2N 4.0-12 V I CCA Operating current - 26 43 µa I CCS Sleep current - 0.7 1.5 µa No load across POS and NEG R T ON On resistance, B2N to NEG - - 100 mω A = 25 C V OP = 4.5V 6

Preliminary bq2158t DC Thresholds (TA = TOPR) Symbol Parameter Value Tolerance Unit Notes V OV Overvoltage threshold 4.25 ± 50mV V V CE Charge enable voltage V OV - 100mV ± 50mV V V UV Undervoltage limit 2.25 ± 100mV V I OC Overcurrent limit 3.3 A T A = 25 C 3 A T A = 60 C t UVD Undervoltage delay 950 ±50% ms TA = 30 C V CD Charge detect threshold 70-60, +80 mv t OVD Overvoltage delay 950 ±50% ms TA = 30 C t OCD Overcurrent delay 12 ±60% ms TA = 30 C Ordering Information bq2158t B Customer Code: Blank = Sample or Pre-production 1 XXX = Customer-specific; assigned by Unitrode 2 Package Option: B = Board-level product Device: Two-Series Cell Li-Ion Supervisor Module Notes: 1. Requires configuration sheet (Table 1) 2. Example production part number: bq2158tb-001 7

IMPORTANT NOTICE Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with TI s standard warranty. Testing and other quality control techniques are utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE ( CRITICAL APPLICATIONS ). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO BE FULLY AT THE CUSTOMER S RISK. In order to minimize risks associated with the customer s applications, adequate design and operating safeguards must be provided by the customer to minimize inherent or procedural hazards. TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right of TI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. TI s publication of information regarding any third party s products or services does not constitute TI s approval, warranty or endorsement thereof. Copyright 1999, Texas Instruments Incorporated