Small Signal Fast Switching Diode MARKING (example only) Bar = cathode marking XY = type code X Y 6 MECHANICAL DATA Case: SOD- Weight: approx.. mg Packaging codes/options: 8/K per " reel (8 mm tape), K/box 08/K per 7" reel (8 mm tape), K/box FEATURES Silicon epitaxial planar diode Fast switching diodes AEC-Q qualified Base P/N-E - RoHS-compliant, commercial grade Base P/N-HE - RoHS-compliant, AEC-Q qualified Material categorization: For definitions of compliance please see www.vishay.com/doc?999 PARTS TABLE PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS -E-08 or -E-8 -HE-08 or -HE-8 Single diode A Tape and reel ABSOLUTE MAXIMUM RATINGS (T amb = C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V R 7 V Repetitive peak reverse voltage V RRM 0 Average rectified current half wave rectification with resistive load () f 0 Hz I F(AV) ma Surge forward current t < s and T j = C I FSM 0 Power dissipation () P tot 00 mw Note () Valid provided that electrodes are kept at ambient temperature. THERMAL CHARACTERISTICS (T amb = C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air () R thja 60 K/W Junction temperature T j C Storage temperature range T stg - 6 to + C Operating temperature range T op - to + C Note () Valid provided that electrodes are kept at ambient temperature Rev..0, -May- Document Number: 87
ELECTRICAL CHARACTERISTICS (T amb = C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I F = ma V F V I F = 0 ma V F. V V R = 0 V I R na Leakage current V R = 7 V I R V R = 0 V I R 0 μa V R = 0 V, T j = C I R 0 Diode capacitance V F = V R = 0 V C D pf Voltage rise when switching ON Reverse recovery time Tested with 0 ma pulses, t p = 0. μs, rise time < 0 ns, f p = ( to 0) khz I F = ma, i R = ma, V R = 6 V, R L = 0 TYPICAL CHARACTERISTICS (T amb = C, unless otherwise specified) V fr. V t rr ns 0 I F (ma) - T j = 0 C T j = C P tot - Power Dissipation (mw) 00 0 0 77-0 V F (V) Fig. - Forward Characteristics 0 0 0 0 00 0 T amb - Ambient Temperature ( C) Fig. - Admissible Power Dissipation vs. Ambient Temperature T j = C f = khz. T j = C f = MHz.0 R f (Ω) C D (V R ) C D (0 V) 0.9 0.8 0.7 78 - - I F (ma) 0 6 8 70 V R (V) Fig. - Dynamic Forward Resistance vs. Forward Current Fig. - Relative Capacitance vs. Reverse Voltage Rev..0, -May- Document Number: 87
I R (na) 7 0 T j ( C) V R = 0 V 0 00 Fig. - Leakage Current vs. Junction Temperature I FRM (A) 0 I n = t P /T T = /f P t P n = 0 T t 0. 0. 0. 0. - - - - - 7 t P (s) I FRM Fig. 6 - Admissible Repetitive Peak Forward Current vs. Pulse Duration Rev..0, -May- Document Number: 87
PACKAGE DIMENSIONS in millimeters (inches): SOD- 0. (0.00) Cathode bar. (0.0) 0.8 (0.0) 0.0 (0.06) 0. (0.008) 0. (0.006) 0. (0.00) max. 0.0 (0.06) 0. (0.0) 0 to 8.9 (0.077).60 (0.06) 0.0 (0.008).8 (0.).0 (0.098). (0.09). (0.0) Foot print recommendation: 0.6 (0.0) 0.6 (0.0) Document no.:s8-v-9.0-00 () Created - Date:.August.00 Rev. - Date:.Sept.009 7.6 (0.06) 0.6 (0.0) Rev..0, -May- Document Number: 87
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